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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor BC 310

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR BC 384

Abstract: bc 357 transistor 0.6 100 200 5+ 2 BC 317 N TO-92A 310 150 45 110 450* 2 5 0.5 100 100 4 6 BC 318 N TO-92A 310 150 30 110 800* 2 5 0.5 100 100 7 6 BC 319 N TO-92A 310 150 20 200 800* 2 5 0.5 100 100 4 4 BC 320 P TO-92A 310 150 45 70 450* 2 5 0.3 10 100 4 6 BC 321 P TO-92A 310 150 30 70 800* 2 5 0.3 10 100 4 6 BC 322 P TO-92A 310 150 20 200 800* 2 5 0.3 10 100 4 4 BC 326 P TO-18 360 50 60 100 500 0.01 5 0.35 1 60 9 - , 6 BC 333 N TO-92F 310 50 25 100 1000« 0.1 5 0.6 10 50 4 â'" BC 334 P TO-92F 310 50 25 100 1000Â
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transistor Bc 540

Abstract: transistor BC 341-6 TO 92 Note 2 B^C 2N 3903 2N 3904 2N 3905 2N 3906 310 310 310 310 40 40 40 40 50 150 100 300 50 150 , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf , 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548 ""Bc"5Ã"7f. BC 558 JP
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transistor bc 138

Abstract: bc 301 transistor 0.4 0.2 90+ 12+ BC 311 BC 311 P TO-39 800 1 70 40 _ 200 1 0.6 0.2 200+ 12+ BC 310 BC 313 P TO-39 800 1 , 0.25 0.05 100 10 - BC 387 N TO-92F 310 0.6 30 40 300 100 1 0.5 0.1 200 10 BC 388 BC 388 P TO-92F 310 , -39 800 1 30 40 120 150 1 0.35 0.15 40 25 BC 139 BC 138 N TO-39 800 1 30 35 â'" 100 10 1.5 1 40 25 _ BC 139 P TO-39 700 0.5 40 40 â'" 100 10 0.8 0.3 â'" 6+ BC 119 BC 140 N TO-39 800 1 40 40 250.1 100 1 1 1 50 25 BC 160 BC 141 N TO-39 800 1 60 40 250* 100 1 1 1 50 25 BC 161 BC 142 N TO-39 800 1 60 20 _ 200
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transistor BC 310

Abstract: transistor bc 487 BC 320 B 310 45 110 110 200 450 220 450 5 0,5 100/ 5 100 4 6 TO 92 BC 318 BC 318 A BC 318 B BC 318 C BC 321 BC 321 A BC 321 B BC 321 C 310 30 110 110 200 400 800 220 450 800 5 0,5 100/ 5 100 4 6 BE B E BC 319 BC 319 B BC 319 C BC 322 BC 322 B BC 322 C 310 20 200 200 400 800 450 800 5 0,5 100/ 5 100 , general purpose transistor selector guide â'" plastic case guide de sélection thomson-csf , 0,4.0,6 A 0,8.1 A 20 V BC 238 25 V BC 308 BC 559 BC 338 BC 328 30 V BC 548
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for transistor bf 245c

Abstract: BF 145 transistor MICRO EL EC TRO NICS CORP û2 Ì)F| bEHlTflfl 00DDb7S 2 N -Channel Junction Field Effect Transistors G EN ER A L PURPOSE M AXIM UM R A T IN G S TYPE C A SE NO. Pd (mW) BC BC BC BC BF BF BF BF BF BF , -92DD 300 300 300 300 300 300 360 360 360 300 300 300 300 300 300 360 310 310 310 310 310 310 B V G SS (V , -30 TO-IB < t> ¥ is Asi TO-72 LEAD CODE TRANSISTOR FET 1 2 E S B D a c G TO-IB PHOTO TRANSISTOR T'S ,«S TO-181LOW PROFILE LENS TO-lflH HI OH PROFILE LENS x LEAD ÔQS cooe
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BSS125

Abstract: transistor BC SERIES switched on the MOSFET gates are discharged via the BC 327/25 pnp transistor. Discharge time is determined , BSS125 BC 327 +5 V CLK +310 V BUZ 385 & 6 R Q 1 S BC 337 BC 327 , transistor in the on-state is taken out via a small-signal transistor (BSS 125). In the on-state it can be , to turn off the transistor via a threshold switch. Transmission of Current Measurement Signals via , . Circuit diagram of SIPMOS half-bridge +5 V 4011 8 & Active high & 10 R Q 13 BC
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transistor BC SERIES BUZ MOSFET Baw delay line 4013 flipflop bc 4013 TRANSISTOR BC 560

transistor BC 153

Abstract: TRANSISTOR BC 141 AKTIEN6ESELLSCHAF 1 B(J 14Q BC 141 Collector-emitter saturation voltage Vc6«t°n/c) hfE 310; rlmb = parameter , BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case (5 C 3 OIN 41873). The , as complementary transistors to BC 160 and BC 161, as well as for AF. switching applications up to 1 A. The transistors BC 140 and BC 141 are available upon request as matched pairs. Type Ordering code BC1401> Q60203-X140 BC 140-6 Q60203-X140-V6 BC 140-10 Q60203-X140-V10 BC 140-16
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Q60203-X140-P Q62702-C234 Q62702-C236 BC141 BCY41 transistor BC 153 TRANSISTOR BC 141 BC transistor series TRANSISTOR BC140 transistor BC 310 0Q04104 Q60203-X140-V16 140/BC160 Q62702-C228-S2 Q62702-C719

Bc 140 transistor

Abstract: TRANSISTOR BC 141 NPN SILICON TRANSISTOR BC 140 TRANSISTOR NPN SILICIUM gQ >| Compl. of BC 160 and BC 161 - Switching and amplifier Commutation et amplification "CEO "21E i 40 V (60 V BC 140 BC 141 1 A 40 . , tension d'entrée < IS ns. générnteur d'impidance SO fi 2/6 310 BC 140, BC 141 STATIC , indications contraires! BC 140 BC 141 Collector-base voltage Tension coltectevr-base vcb0 80 100 V , 175 °C 76 - 07 1/6 307 BC 140, BC 141 STATIC CHARACTERISTICS t ,_-25°C (Unless otherwise statec
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Bc 140 transistor bc 187 npn transistor TRANSISTOR BC 187 transistor bc 102 on BC 187 TRANSISTOR TRANSISTOR BC 140

telefunken ta 350

Abstract: transistor BC 310 DDDSlfl^ BF 310 Silicon NPN Epitaxial Planar RF Transistor Applications: General up to 100 MHz In , TELEFUNKEN ELECTRONIC BF 310 Ã"1C D â  fi^SOO^ 00051^0 DC characteristics rtmb=25°C, unless otherwise , the taping-code to the order number. Example: aic d filEOOIb 0005153 b BC 238 C DU Order-No. of Type Code for TO-92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor, view on gummed tape 05 = View on round side
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telefunken ta 350 BF310 BC238C transistor AC 237 TO92 telefunken transistors transistor bc 238 b 100MH 569-GS

l9902

Abstract: BCW General Purpose Transistor BCW60A/B/C/D GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation Storage Tem perature Sym bol V cbO V cE O V , Gain BCW 60B BC W 60C BC W 60D BC W 60A BCW 60B BC W 60C BC W 60D BC W 60A BCW 60B BC W 60C BC W 60D C , V ce= 5V, lc=2m A 220 310 460 630 V ce= 1V, lc=50m A VcE(sat) VBE(sat) VBE(sat) C ob fT NF
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l9902 BCW General Purpose Transistor
Abstract: TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors , , low noise applications. MARKING CODE: BCW61B: BB BCW61C: BC BCW61D: BD SOT-23 CASE MAXIMUM , 30 140 310 80 175 350 MAX 20 20 0.25 0.55 0.85 1.05 0.75 6.0 6.0 150 800 , BCW61D Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: BCW61B: BB BCW61C: BC BCW61D: BD Central Semiconductor
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bc 357 transistor

Abstract: bc 357 transistor datasheet BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor , , low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM , =2.0mA IC=50mA IC=2.0mA, f=1.0kHz BCW61B MIN MAX 30 140 310 80 175 350 MAX 20 20 0.25 , TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD R1 (20-February 2003) Central Semiconductor
Central Semiconductor
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bc 357 transistor bc 357 transistor datasheet BCW61C-BC TRANSISTOR BCW61C BD 140 transistor PNP Epitaxial Silicon Transistor sot-23

bc 357 transistor

Abstract: transistor BC SERIES TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors , , low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM , =10A IC=2.0mA IC=50mA IC=2.0mA, f=1.0kHz BCW61B MIN MAX 30 140 310 80 175 350 UNITS V V , -November 2009) BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL , : BB BC BD R2 (20-November 2009) w w w. c e n t r a l s e m i . c o m Central Semiconductor
Central Semiconductor
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Bcw61d sot23 transistor W-32 transistor BC 55
Abstract: TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors , , low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM , 310 80 175 350 UNITS V V V mA mW °C °C/W 32 32 5.0 100 350 -65 to +150 357 , TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: BCW61B : BCW61C : BCW61D : BB BC BD R2 (20-November 2009) w w w. c e n t r a l s e -
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Abstract: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Unit Pc 32 32 5 100 350 Tstg 15 0 V V V mA mW °C Symbol Collector-Base Voltage Collector-Emitter Voltage VcBO , Current Gain :BC W 60B BCW 60C BCW 60D :BC W 60A BCW 60B BCW 60C BCW 60D .'BCW 60A BCW 60B BCW , 0 m A 220 310 460 630 60 70 90 100 V c e (sat) Base-Emitter On Voltage Output -
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BCW60D

BC307-40

Abstract: BC807-40 1 B( 807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon Maximum Ratings ( Ta , -40=5C 1.F R-5=1.0 X 0.75 X 0.062 In. 2.Alumina=0.4 x 0.3 x 0.024 tn. 99.5% alumina. BC 807-16/BC807 , 0VDC. f=100MHz> fT 100 - - MHz Output Capacitance (VcB- '10V f=l 0MHz) Cobo 10 - pF BC 807-16/BC807 , . T cm pi rullilo ( iwffkkntx 10 10 VR. REVERSE VOLTAGE (VOWS) Figure 5. Capacitances ico BC 807-16/BC 807-25 BC807-40 SOT-23 Package Outline Dimension H. K a 1 TOP VIEW II u _u_ a
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BC307-40 BC 807-25 TRANSISTOR BC 119 fl 807 SAI SOT23 BC8Q7-17 807-16/BC807-25 807-16/BC

LC marking code transistor

Abstract: transistor marking code PNP EPITAXIAL SILICON TRANSISTOR MARKING CODE TYPE BCW61A BCW61B BCW61C BCW61D MARK. BA BB BC BD , BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO -32 V Collector-Emitter Voltage VcEO -32 V Emitter-Base Voltage Vebo -5.0 V Collector Current lc -100 mA Collector , BCW61B 140 310 BCW61C 250 460 BCW61 D 380 630 BCW61A VCE= -5V, lc= -50mA 60 BCW61B
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LC marking code transistor transistor marking code marking code ER transistor TRANSISTOR BCW61 KS5086

BCW61A

Abstract: transistor mark BA BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Cllector-Base Voltage Collector-Emitter Voltage , 310 460 630 -0.55 -0.25 1.05 0.85 0.75 6 V V V V V pF 6 dB 150 800 ns ns BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR TYPE BCW61A BCW61B BCW61C BCW61D MARK. BA BB BC BD Samsung Electronics
Samsung Electronics
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transistor mark BA

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET mA Double Transistor Arrays w BC 846PN N/P 65 200 330 250 15 30 110 - 450* 2 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 RF-Dual Transistor , . . . . . . . . . . . . . 17 Double Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . , 2 1800 SOT-343 ­ 0.95 2 w New type RF-Dual Transistor Arrays Characteristics (TA = 25 , Gain dB NF dB f mW Gain dB f mA BGA 310 60 250 10 6.0 100 9
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2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET diode S6 78A TRANSISTOR BC 450 pnp transistors bf 517 BC 327 SOT 23
Abstract: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C h a r a c t e r is t i c Collector-Base Voltage , = -1 mA R1=R2=50K£1, RL=990£i 20 40 100 120 140 250 380 60 80 100 100 220 310 460 , Marking FAIRCHILD U n it â e BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR MARKING CODE TYPE BCW 61A BCW 61B B C W 61C BCW 61D MARK. BA BB BC BD FAIRCHILD -
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