NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| PDTB123ET,215 | NXP Semiconductors | TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal | 
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| PDTB123TT,215 | NXP Semiconductors | TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SMD, 3 PIN, BIP General Purpose Small Signal |
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| PDTB123YT,215 | NXP Semiconductors | TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal |
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| PDTB123EK T/R | NXP Semiconductors | PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
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| PDTB123YK T/R | NXP Semiconductors | PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2DI3OOA-O5O(300A) POWER TRANSISTOR MODULE : Features • High Current • Iifea^u High DC , 10 V DC Ic 300 A 1ms Icp 600 A DC -Ic 3,00 A DC Ib 10 A 1ms Ibp 20 A one Transistor Pc , Typ Max Units m is îè Rih(j-c) Transistor 0.1 °c/w & fë ÎA Rlh(j-c) Diode 0.31 °c/w & ffi ÎA , 40 60 80 100 120 140 Tc CC) ASO ASO Derating B-123 2DI3OOA-O5O(300A) % < "j > n m UlB t , Thermal Resistance (Transistor) ra t (sec) Transient Thermal Resistance (Diode) 200 I00 ... | OCR Scan |
4 pages, |
T760 T151 H11S Transistor B123 datasheet abstract |
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| Abstract: 2DI3OOA-O5O(300A) POWER TRANSISTOR MODULE : Features Ifl^^ii : Outline Drawings High Current , 20 A one Transistor Pc 1200 W two Transistors Pc 2400 W fê o" SP um. Jx Tj + 150 °C f # S 1 , Test Conditions Min Typ Max Units m is jit Rih(j-c) Transistor 0.1 "C/W & s tjt Rth(j-c) Diode , \ N 0 20 40 60 80 100 120 140 Tc CC) ASO ÄÄtttt ASO Derating B-123 2DI3OOA-O5O(300A) CjksD 0-5 , I0" IO"2 Hi M t [sec) IO" Transient Thermal Resistance (Transistor) 200 I00 ... | OCR Scan |
4 pages, |
diode js7 datasheet abstract |
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| Abstract: LSTTL outputs. The protection circuity detects over-current in the driven power transistor and , DESIGNERS MANUAL B-123 Previous Datasheet Index Next Data Sheet IR2127 IR2127 Absolute Maximum , Process & Design Rule Transistor Count Die Size Die Outline Thickness of Gate Oxide Connections ... | Original |
6 pages, |
transistor B123 MP150 IR2127S IR2127 600V Current Sensing N-Channel IGBT datasheet abstract |
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| Abstract: type) P: Voltage input (PNP type) 3. Output None: Relay output (DPDT) S: Transistor output (NPN , )/ 12 to 48 VDC Transistor (Photocoupler) 24 to 48 VAC (50/60 Hz)/ 12 to 48 VDC 8-pin Models , 48 VAC (50/60 Hz)/ 12 to 48 VDC Transistor (Photocoupler) 24 to 48 VAC (50/60 Hz)/ 12 to 48 VDC , Time-limit output type H3CR-A/-A8/-AP:Relay output (DPDT) H3CR-AS/-A8S: Transistor output (NPN/PNP , Timers with Transistor Outputs. 8-pin Voltage input - *The internal circuits are optically ... | Original |
22 pages, |
Y92F-30 DPDT 6 terminal switch internal diagram H3CR-A H3CR-A8 SPDT 5 pins Relay SPDT relay Y92F 30 H3CR-A8-301 PF085A PL08 PL11 11 pin relay Socket TIMER H3CR-A8 datasheet abstract |
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| Abstract: Ordering number : EN B123 _CMOS LSI _LC66E308 LC66E308 4-Bit Single Chip Microcomputer with EPROM Overview , transistor acts as a pull-up resistor when data is output. CMOS type output - Poh MOS type transistor does , output circuit with an Neh MOS type transistor. OD output - Open drain output type Note: At the system , Pull-up transistor output type .O I Output 1 data -Input â- ]-l-' data SB Ports P2, P3, P5 and P6 employ Schmitt trigger input. The Pch type MOS transistor can act as either a pull-up resistor (for Pu MOS output ... | OCR Scan |
22 pages, |
Transistor B123 LC66E308 LC6630X LC66308A LC66E308 abstract |
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| Abstract: Ordering number : EN B123 _CMOS LSI _LC66E308 LC66E308 4-Bit Single Chip Microcomputer with EPROM , Remarks: Pu MOS type output - Pch MOS type transistor acts as a pull-up resistor when data is output. CMOS type output - Poh MOS type transistor does not act as a pull-up resistor when data is output. Instead, it forms a complementary-symmetry MOS output circuit with an Neh MOS type transistor. OD output , H-r data B Ports P2, P3, P5 and P6 employ Schmitt trigger input. 2. Pull-up transistor output type .O ... | OCR Scan |
22 pages, |
n121 transistor LC66E308 LC66308A LC66306A LC66304A B123 LVB V 2.22 cmb-12 LC6630X LC66E308 abstract |
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| Abstract: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in whi ... | Original |
176 pages, |
TB62705BF Triac Heat Sink assembly TLP250 MOSFET DRIVER TLP161J diagram induction cooker TLP250 MOSFET DRIVER application note induction cooker circuit diagram induction cooker st TOSHIBA IGBT MG50J2YS1 induction cooker fault finding diagrams datasheet abstract |
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| Abstract: Power Dissipation One transistor *3 Pc - 198 W Collector Current DC Ic - 50 A , temp. Atmospheric pressure Test duration 121 °C 2.03x10s Pa (Reference value) 20hr. B-123 5 (1:0) io 5 ... | OCR Scan |
23 pages, |
ED-4071 AC2500 7MBP75TEA060 datasheet abstract |
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| Abstract: [ 4 ] Handling Guide for Semiconductor Devices [ 4 ] Handling Guide for Semiconductor Devices [ 4 ] Handling Guide for Semiconductor Devices 1. Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA p ... | Original |
45 pages, |
YG6260 C5003 C5700 INCOMING RAW MATERIAL INSPECTION marking 221 sop8 MIL-STD-750b mosfet base induction heat circuit ST-100S use of contact detail in campany 750H mosfet induction heater jis C5003 st-100sx datasheet abstract |
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| Abstract: [ 4 ] Handling Guide for Semiconductor Devices [ 4 ] Handling Guide for Semiconductor Devices [ 4 ] Handling Guide for Semiconductor Devices 1. Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA p ... | Original |
45 pages, |
YG6260 C5003 C5700 jis C5003 mosfet induction heater ST-100S ST-100SX 750H datasheet abstract |
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| * * NAND GATE USING TWO DIODES AND A TRANSISTOR .SUBCKT NAND 1 2 3 4 40 *IN www.datasheetarchive.com/files/spicemodels/misc/swit_reg.lib |
Spice Models | 01/09/2009 | 320.85 Kb | LIB | swit_reg.lib |