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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

transistor B 892

Catalog Datasheet MFG & Type PDF Document Tags

transistor d 1710

Abstract: BFP96 Philips S em iconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in hermetically sealed sub-mlnlature SOT173 and SOT173X , MHz; T ^ = 25 °C lc = 50 mA; VC E = 10 V; f= 8 0 0 M H z ;T am b = 25 °C open base CONDITIONS open , Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL SbE D BFP96 , = 10 V lE = i, = 0; VC B = 1 0 V; f = 1 MHz lc = ic=0; VE B = 0.5 V; f = 1 MHz lc = 0; VC E = 10 V
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transistor d 1710 transistor B 892 1351 NPN TRANSISTOR b 1624 transistor TRANSISTOR C 557 B BFP96 P6 BFQ32C DD4537M 004S375 T-33-05 004S3

transistor B 892

Abstract: ir transmitter receiver S852T U 2 7 4 0 B -F P U H F A M / FM transm itter Silicon N P N p lan a r R F transistor B roadband am , Control Fun ctio n K ey Featu res ! Package IR Transmitter / Receiver B P V 23N F PIN diode IR p h o , 0.55 m A stan d b y current, 2 0 to 6 0 kH z A djustable co nstant c u rre n t {0.2 to 1 .2 A ) Side v iew j T SH A 520. T SH A 550. U 4 2 6 B -F P IR em itter fam ily T l-3 /4 , 5 m m T 1-3/4, 5 m m S08 U 2 5 3 5 B -F P L ow -p o w er consum ption S08 U 2 5 3 8 B -F P O nly 3
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3741B ir transmitter receiver transistor 892 ir remote decoder IC IC for IR receiver 48C892 S822T S0T23 SS016 S016L 092/M
Abstract: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T > PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes , dB 15 dB lc = 50 mA; VC = 10 V; E f = 800 MHz;Ta b = 25°C m Note 1. T, is the , transistor BFP96 N AMER PHILIPS/DISCRETE bTE »- LIMITING VALUES In accordance with the -
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transistor B 892

Abstract: ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses , Drain Current (Pulse) * B Power Dissipation ID IDM TA=25 OC O TA=70 C PD -5.5 -4.4 , Packaging Type SOP-8 VER 1.2 1 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor , =-1A 8.92 16.08 VDS=-10V, VGS=-4.5V, ID=-4.5A 14.5 800 960 nC ns Dynamic Input , application depends on the user's specific board design. B. Repetitive rating, pulse width limited by
ACE Technology
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BAS01ATEX

Abstract: IC/A58 opto coupler Coupled Isolators each consisting of a Infrared emitter coupled to a silicon photo transistor. The series , ) OUTPUT TRANSISTOR COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT POWER DISSIPATION 35 Volts 15 mA , TRANSISTOR Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Emitter-Collector , % If = 10 mA Vce = 5 V OPI 1000L B - 50 - - % If = 10 mA Vce = 5 V OPI , power limiting components as specified in:EN60079-11:2012, Clause 8.9.2. CERTIFICATE No.:- IECEx BAS
Bedford Opto Technology
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BAS01ATEX IC/A58 opto coupler 0021U/4 BAS01ATEX1278U/5 EN60079-0 EN60079-26 IEC60079-11 OPI1000L

transistor B 892

Abstract: PDTC114EE Philips Semiconductors Preliminary specification NPN resistor-equipped transistor FEATURES · , . DESCRIPTION NPN resistor-equipped transistor in an SC-75 plastic package. PNP complement: PDTA114EE. PINNING , collector/output 2 3 QUICK REFERENCE DATA SYMBOL VCEO b ICM PARAMETER collector-emitter voltage , 891 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor , voltage positive negative lo icM Plot T stg Tj Tam b CONDITIONS open emitter open base open collector
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PDTC114EE

2N6547

Abstract: switching transistor 2N6547 ® HIGH POWER NPN SILICON TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS SWITCH MODE POWER SUPPLIES s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS 1 s DESCRIPTION The 2N6547 is a silicon Multiepitaxial Mesa NPN transistor mounted in TO-3 metal , Collector-Emitter Voltage (V BE = 0) 850 V V CEO Collector-Emitter Voltage (I B = 0) 400 V VEBO
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switching transistor P003F
Abstract: , NEW JERSEY 07081 U.S.A. BUX10 HIGH POWER NPN SILICON TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . MOTOR , planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications , Collector Current VCE = 30 V VCE = 48 V t = 1s t = 1s 5 1 A A fr Transistor Frequency , )* llFE Is/b tf Clamped E s /b Collector Current » Pulsed: Pulse duration = 3QO\is, duty New Jersey Semiconductor
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BU326A

Abstract: BU326 BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: s POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO , ) Collector-Emitter Sustaining Voltage(I B = 0) T est Co nditi ons Min. Typ. mA mA 10 I C = 100 , Saturation Voltage I C = 2.5 A IC = 4 A I B = 0.5 A IB = 1.25 A 1.5 3 V V V BE(s at
STMicroelectronics
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BU326
Abstract: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX22 HIGH CURRENT NPN SILICON TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING , -3 PACKAGE DESCRIPTION The BUX22 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO , =4V Second Breakdown Collector Current VCE = 140 V VCE = 20 V t = 1s t = 1s fr Transistor , V CC = 100V lc = 20 A IB2 = - 2 . 5 A Clamped E 5 /b Collector Current V c i amp = 250 V L New Jersey Semiconductor
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BUX20

Abstract: SGS-Thomson BUX20 ¿57 SGS-THOMSON BUX20 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY . FAST SWITCHING SPEED APPLICATIONS . MOTOR CONTROL . , multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intended for use in switching and linear , f e* DC Current Gain lc = 25 A Vce = 2 V lc = 50 A Vce = 4 V 20 10 60 ls/b Second Breakdown Collector Current Vce = 40 V t = 1 s Vce = 20 V t = 1 s 1.5 17.5 A A fi Transistor Frequency Vce = 15 V
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SGS-Thomson BUX20 3030 typ dc motor 1023 transistor
Abstract: ACE2341B P-Channel Enhancement Mode Field Effect Transistor Description The ACE2341B uses , : SOT-23-3 VER 1.3 1 ACE2341B P-Channel Enhancement Mode Field Effect Transistor Electrical , =-4A 15 Drain Forward Voltage VSD IS=-1.7A,VGS=0V -0.85 -1 8.92 11.6 1.8 2.34 , Transistor Typical Performance Characteristics VER 1.3 3 ACE2341B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.3 4 ACE2341B P-Channel Enhancement ACE Technology
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BU326A

Abstract: BU326 BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO , 0) 900 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base , ) Collector-Emitter Sustaining Voltage(I B = 0) mA mA 10 V EB = 10 V Unit 1 2 o T c = 125 C
STMicroelectronics
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BU326A

Abstract: BU326 BU326A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec , Collector-Emitter Voltage (V BE = 0) 900 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V , CEO(sus) Collector-Emitter Sustaining Voltage(I B = 0) I C = 100 mA mA mA 10 V EB = 10
STMicroelectronics
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Abstract: SGS-THOMSON R SlR i[Liera® S$ fflD i® [i!lD BUX10 HIGH POWER NPN SILICON TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING , The BUX10 is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for , SCHEMATIC DIAGRAM C o (T A B ) () 1 BOâ'" â â'¬) E0(2) ABSOLUTE MAXIMUM RATINGS Sym bol , r-e m itte r V oltage ( V b e = - 1 .5V) 160 V VcEO C o lle cto r-e m itte r V oltage (Ib -
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Abstract: TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS: . , multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply , Value Unit VcES C o lle cto r-E m itte r V oltage ( V b e = 0) 900 V VcEO C o lle , V V ÃE (sat)* B ase-E m itter S aturation V oltage lc = 2.5 A lc = 4 A Ib = 0.5 A , # SGS-THOMSON n B Å" B ® iiLieÂ¥ii(siraÃS V 25 BU326A TO-3 MECHANICAL DATA mm inch DIM -
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transistor tt 2206

Abstract: TT 2206 transistor ESC D Ml f l 2 3 5 bOS G 0 G M Ô 4 M * ] H S 1EG , BU 326 A NPN Silicon Power Transistor - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case (3 B 2 DIN 41872). It is outstanding for short switching times and high dielectric , = 10 V) Switching time: Fall time: ( / c =3 A; / B i =hz =1A; V ce =250 V) 6 MHz (IS , /c = MVcE);v=0;relM = 75"C 5 10' 5 10* 5 103V V« 892 2208 0 -0 5
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transistor tt 2206 TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 W2206 Q62702-U268 D--03
Abstract: TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS . , BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended , ( R b e = 50 Q.) le = 100 mA 500 V C o lle cto r-E m itte r S aturation V oltage le = 5 A 1A lB = 2.5 A 1.5 le = 8 A 3 V V B ase-E m itter S aturation V oltage le , ollector C ut-off C urrent (V b e = 0) I c es Il Unit o o > > Max. Tease = 1 25Â -
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t 326 Transistor

Abstract: 326 Transistor 25C D Ml 653SbQ5 QQGMÃ4M 1 «SIEG , NPN Silicon Power Transistor â -SIEMENS AKTIENGESELLSCHAF BU 326 A BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case (3 B 2 DIN 41872). It is outstanding for short switching times and high dielectric strength and is , the case. E *4,2ma>t B Type Ordering code BU 326 A Q62702-U268 «1,0 CXT 12,6 initia* L 9.5 , ° s -I- 892 2208 0-05 Permissible operating range A 'c = MVce); v=0;rCMa = 75°C 5 10' 5 10* 5
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326 Transistor BU 103 A transistor transistor BU 104 J 326 npn transistor w5 S23SL0S
Abstract: BPX81 2-10 TRANSISTOR ARRAYS BPX82â'" 89, 80 SIEMENS SINGLE TRANSISTOR Silicon NPN , .876 (22.3) .892 (22.7) BPX 80 .975 (24.8) .990 (25.2) GE006367 FEATURES â , a single transistor plastic encapsulated phototransistor; the BPX82 to BPX89, BPX80 are arrays , mV (c^PCEmin x °-3, Ee=0.5 mW/cm2 â'The components are marked -A . -B, -C . Due to , Photocurrent, X=950 nm *P £ C 440 to 1070 -B -C .40 to .80 >.5 1.7 Note: 1. IpcEmin is -
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230PC 30CTC BPX81-3 BPX81-4 BPX81-2 BPX82-89
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