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Part Manufacturer Description Datasheet BUY
HS1-82C85RH-Q Intersil Corporation 15MHz, PROC SPECIFIC CLOCK GENERATOR, CDIP24 visit Intersil
HS9-82C85RH-8 Intersil Corporation 15MHz, PROC SPECIFIC CLOCK GENERATOR, CDFP24, CERAMIC, DFP-24 visit Intersil
HS9-82C85RH-Q Intersil Corporation 15MHz, PROC SPECIFIC CLOCK GENERATOR, CDFP24, CERAMIC, DFP-24 visit Intersil
CP82C84AZ Intersil Corporation 8MHz, PROC SPECIFIC CLOCK GENERATOR, PDIP18, ROHS COMPLIANT, PLASTIC, DIP-18 visit Intersil
CS82C84AZ96 Intersil Corporation 8MHz, PROC SPECIFIC CLOCK GENERATOR, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 visit Intersil
MD82C84A/B Intersil Corporation 8MHz, PROC SPECIFIC CLOCK GENERATOR, CDIP18, CERAMIC, DIP-18 visit Intersil

transistor B 560 specifications

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR C 557 B

Abstract: transistor c 557 BC556/557/558/559/560 - PNP Epitaxial Silicon Transistor October 2012 BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features · Switching and Amplifier · High Voltage: BC556, VCEO = , © 2012 Fairchild Semiconductor Corporation BC556/557/558/559/560 Rev. B0 1 A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 www.fairchildsemi.com BC556/557/558/559/560 - PNP Epitaxial Silicon Transistor , Collector-Base Voltage : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559
Fairchild Semiconductor
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TRANSISTOR C 557 B transistor c 557 transistor B 560 B 560 PNP TRANSISTOR B 557 PNP TRANSISTOR TRANSISTOR C 557 B W 65 BC556/557/558/559/560 BC559 BC560 BC546 BC557/560 BC556/557/558

transistor B 560

Abstract: TRANSISTOR BC 136 noise voltage at the input of the transistor Vorläufige technische Daten - Preliminary specifications , BC 559 â'¢ BC 560 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF , Lagerungstemperaturbereich Storage temperature range B 2/V.2.493/0875 A 1 -u. CBO -'CEO -u, EBO -Ir 'CM 'BM tot stg BC 559 30 30 BC 560 50 45 5 100 200 200 500 150 -65 . +150 V V V mA mA mA mW °C °C 133 BC 559 â'¢ BC 560 'tot 500 mW 400 300 200 100 7414 6 9 tk â'" -â  V
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OCR Scan
TRANSISTOR BC 136 TRANSISTOR BC 560 TRANSISTOR BC 135 IC 7414 transistor c-133 2493 transistor

transistor bc556

Abstract: transistor bc 558 application PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER · HIGH VOLTAGE , Fairchild Semiconductor Corporation BC556/557/558/559/560 PNP EPITAXIAL SILICON TRANSISTOR , MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol Collector-Base Capacitance : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector , Capacitance Noise Figure : BC556/557/558 : BC559/560 CCBO NF : BC559 : BC560 NF Test
Fairchild Semiconductor
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transistor bc556 transistor bc 558 application bc557 fairchild pnp bc559 transistor transistor 557 b BC 557 PNP TRANSISTOR BC559/560 15000MH

HVR-1X 7 diode

Abstract: STR80145 specifications is requested. When considering the use of Sanken products in the application where higher , sales representative to discuss and obtain written confirmation of your specifications. The use of , . 19 Transistor Arrays . 20 · Sink Drive Transistor Arrays . 20 · Source Drive Transistor Arrays . 20 · H-Bridge Transistor Arrays
Sanken Electric
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STR83159 HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 SE110N O01EC0 STR7001 STR7002 STR7003 STR7101 STR7102

b0912

Abstract: Transistor Specifications Absolute Maximum Ratings Parameter Drain to Gate Voltage, Vd ­ Vg Drain Voltage , 5.50 5.60 5.70 Frequency (GHz) 5.80 5.90 Data Sheet: Rev B 09/12/2012 © 2012 TriQuint , ® T1G6003028-FS 30W, 28V, DC ­ 6 GHz, GaN RF Power Transistor Contact Information For the latest specifications , T1G6003028-FS 30W, 28V, DC ­ 6 GHz, GaN RF Power Transistor Applications · · · · · · Military , Description Packaged part: Flangeless 5.4-5.9 GHz Eval. Board ECCN EAR99 EAR99 Data Sheet: Rev B 09/12
TriQuint Semiconductor
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b0912 T1G6003028-FSEVB1

2SC1740s equivalent

Abstract: transistor digital 47k 22k PNP NPN transistor element reduces package size by 50% (Unit : mm) VMT3×2 1.2 Mounting area 1.2 43 , ) -200 VT6T2 hFE hFE Ratio Equivalent Circuit Diagram - 120 to 560 0.15 0.9 to 1.1 , i n c l a m p d i o d e fe a t u r i n g h i g h b r e a k d ow n Malfunction Prevention Resistor , , reducing mounting area by up to 40%. Clamping Diode Current Limiting Resistor Transistor Transistor Mounting area Reduced 40 Malfunction Prevention Resistor Transistor for Solenoid
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2SC1740s equivalent transistor digital 47k 22k PNP NPN 2SA1576UB 2sc401 2SC6114 2sd198 R0039A 51P6029E
Abstract: www.unisonic.com.tw R 180 ~ 390 S 270 ~ 560 2 of 5 QW-R206-081.G 2SC4617 NPN SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR , -x-AL3-R 2SC4617G-x-AN3-R 2SC4617G-x-AQ3-R Pin assignment: E: Emitter B: Base Package SOT-89 SOT-23 SOT-323 SOT-523 SOT-723 C: Collector Pin Assignment 1 2 3 B C E E B C E B C E B C E B C , of 5 QW-R206-081.G 2SC4617  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25 Unisonic Technologies
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2SA1774 2SC4617G-

TRANSISTOR BC 560c

Abstract: transistor BC 458 BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier · High Voltage: BC556 , . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Emitter-Base Voltage Collector Current (DC) Collector Power , /560 : BC559 : BC560 Test Condition VCB= -30V, IE=0 VCE= -5V, IC=2mA IC= -10mA, IB= -0.5mA IC= -100mA
Fairchild Semiconductor
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TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc558c bc557 cross reference BC557/bc557 cross reference BC550 BC556CBU BC556CTA BC556BBU BC556ATA BC556ABU

B 560 PNP TRANSISTOR

Abstract: dtc114ek typ V mA Pkg Product £ each PNP Type 1: Transistor & diode · UML1N L1 -50 -150 120~560 -6 -1 SC , D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN/PNP TRANSISTOR CIRCUITS · COMPLETE , ISOLATED NPN/PNP TRANSISTOR CIRCUITS SC-88, SC-74 DIMENSIONS L P = 4 3 5 2 Z A = = = 6 1 Each lead has the , 120~560 120~560 120 120 120 120 100~600 100~600 100~600 100~600 100~600 100~600 100~600 100~600 Pkg , DTA124EK DTC144E DTA144E POA 0.15 0.15 POA B C D1 D2 E Outline L W H W1 SC-88 2.0 2.1 0.9 1.25
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2SA1037AK dtc114ek Transistor circuits 2SC2412K 2SC2411K 2SA1036K DTC143T DTA143T

2SC1412K

Abstract: UMW8 General Purpose Transistor (Isolated Dual Transistors) UMZl N / IMZlA l Features 1) B o t h 2SA1037AK c , automatic mounting machines. 3` Transistor elements are independent, eliminating interference. @Structure Epitaxial planar type PNP silicon transistor The following characteristics apply to both Trl and Tr2. l , /IMTlA Conditions Ic=-50/1A Ic=-1mA l~=-50/1A -60 -50 -6 - - -0.1 -0.1 -0.5 560 5 V v V , =-12V, IE=OA, f=lMHz hFE f-l Cob 120 - 140 4 @Packaging specifications @Electrical
ROHM
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2SC1412K UMW8 2sc1412 2SC141 baw 92 FMY3 1T106
Abstract: 0.09BSC 0.18BSC B 6.80 7.20 0.268 0.283 C 5.40 5.60 0.213 0.220 D , Transistor Notice Specifications of the products displayed herein are subject to change without notice , TSB1184 Low Vcesat PNP Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3 , Packing TO-252 2.5Kpcs / 13â' Reel Epitaxial Planar Type PNP Silicon Transistor Absolute , Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Symbol Min Typ Max Taiwan Semiconductor
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TSB1184CP

TSB1184

Abstract: transistor B 540 TSB1184 Low Vcesat PNP Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3 , TO-252 2.5Kpcs / 13" Reel Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum , Specifications (Ta = 25oC unless otherwise noted) Parameter Symbol Min Typ Max Unit , -120 -0.3 - -0.5 560 V fT - 80 - MHz Cob - 55 - pF , Test: Pulse Width 380uS, Duty Cycle2% 1/4 Version: A08 TSB1184 Low Vcesat PNP Transistor
Taiwan Semiconductor
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transistor B 540 pnp transistor d 640 TO252
Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617  ORDERING , : Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-323 SOT-523 SOT-723 Pin Assignment 1 2 3 E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel C , Unisonic Technologies Co., Ltd 1 of 3 QW-R221-011.E 2SA1774  PNP EPITAXIAL SILICON TRANSISTOR Unisonic Technologies
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2SA1774G- 100MH

KSB1121

Abstract: KSD1621 R S T U hFE 100~200 140~280 200~400 280~560 Rev. B ©1999 Fairchild Semiconductor Corporation KSD1621 NPN EPITAXIAL SILICON TRANSISTOR KSD1621 NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor , KSD1621 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT DRIVER APPLICATIONS · Low , 100 100 560 100 65 0.18 0.85 150 19 60 500 25 0.4 1.2 Unit V V V nA nA V
Fairchild Semiconductor
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KSB1121

transistor A08

Abstract: A08 transistor 0.09BSC 0.18BSC B 6.80 7.20 0.268 0.283 C 5.40 5.60 0.213 0.220 D , PNP Transistor Notice Specifications of the products displayed herein are subject to change , TSB1184A Low Vcesat PNP Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3 , / -100mA TO-252 2.5Kpcs / 13" Reel Epitaxial Planar Type PNP Silicon Transistor Absolute , Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Symbol Min Typ Max
Taiwan Semiconductor
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TSB1184ACP transistor A08 A08 transistor

pnp transistor 600V

Abstract: TSA1765 : B11 TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Mechanical Drawing DIM A B , High Voltage PNP Epitaxial Planar Transistor Notice Specifications of the products displayed herein , TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2 , Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter , Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB Ptot TJ TSTG Limit -600 -560 -7 -150
Taiwan Semiconductor
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pnp transistor 600V 600v pnp TRANSISTOR 0835 TSA1765CW

transistor rf m 1104

Abstract: UHF TRANSISTOR DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU97 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor designed for use in mobile radio , temperature profile. The transistor has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads , Philips Semiconductors Product specification UHF power transistor BLU97 RATINGS Limiting
Philips Semiconductors
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transistor rf m 1104 UHF TRANSISTOR TRIMMER capacitor 5-60 pF MBK187

18BSC

Abstract: TSB1412 MIN MAX 0.09BSC 0.18BSC B 6.80 7.20 0.268 0.283 C 5.40 5.60 0.213 , NPN Transistor Notice Specifications of the products displayed herein are subject to change , TSD2118 Low Vcesat NPN Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3 , -252 2.5Kpcs / 13" Reel Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC , TSTG o C o - 55 to +150 C Electrical Specifications (Ta = 25oC unless otherwise noted
Taiwan Semiconductor
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TSB1412 TSD2118CP

transistor rf m 1104

Abstract: UHF TRANSISTOR DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification File , UHF power transistor BLU97 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor , emitter-ballasting resistors for an optimum temperature profile. The transistor has a 4-lead stud envelope with , damaged. August 1986 2 Philips Semiconductors Product specification UHF power transistor , August 1986 3 Philips Semiconductors Product specification UHF power transistor BLU97
Philips Semiconductors
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philips Trimmers 60 pf gp 832 transistor D 2578 9 th class date sheet class b power transistors datasheet current gain L6 PHILIPS
Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617  ORDERING , Assignment: E: EMITTER B: BASE C: COLLECTOR  Pin Assignment 1 2 3 E B C E B C E B C , EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER , =100MHz VCB= -12V, IE=0A, f=1MHz MIN -60 -50 -6 TYP MAX -0.1 -0.1 560 -0.5 120 140 4.0 Unisonic Technologies
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2SA1774L-
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