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transistor B 560 specifications

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Abstract: voltage at the input of the transistor Vorläufige technische Daten - Preliminary specifications , BC 559 • BC 560 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF , Gesamtverlustleistung Total power dissipation Wr,b£25°C Sperrschichttemperatur Junction temperature Lagerungstemperaturbereich Storage temperature range B 2/V.2.493/0875 A 1 -u. CBO -'CEO -u, EBO -Ir 'CM 'BM tot stg BC 559 30 30 BC 560 50 45 5 100 200 200 500 150 -65 . +150 V V V mA mA mA mW °C °C ... OCR Scan
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4 pages,
72.97 Kb

transistor c-133 BC 559 C ic 7414 cm 2493 transistor transistor BC 3 TRANSISTOR BC 560 TRANSISTOR BC 135 IC 7414 TRANSISTOR BC 136 transistor B 560 datasheet abstract
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Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 2SA1774 GENERAL PURPOSE TRANSISTOR FEATURES PNP EPITAXIAL SILICON TRANSISTOR 3 2 3 2 1 1 SOT-23 * Excellent hFE linearity * Complements the UTC 2SC4617 2SC4617 SOT-523 ORDERING INFORMATION Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel , 2SA1774G-x-AN3-R SOT-523 Note: Pin Assignment: E: EMITTER B: BASE C: COLLECTOR MARKING , Collector Current PNP EPITAXIAL SILICON TRANSISTOR RATINGS UNIT -60 V -50 V -6 V -0.15 A SOT-23 0.22 ... Original
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3 pages,
194.82 Kb

2SA1774 2SA1774 abstract
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Abstract: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER · HIGH VOLTAGE , Fairchild Semiconductor Corporation BC556/557/558/559/560 PNP EPITAXIAL SILICON TRANSISTOR , MAXIMUM RATINGS (TA=25°C) ° Characteristic Symbol Collector-Base Capacitance : BC556 BC556 : BC557/560 : BC558/559 BC558/559 Collector-Emitter Voltage : BC556 BC556 : BC557/560 : BC558/559 BC558/559 Emitter-Base Voltage Collector , Capacitance Noise Figure : BC556/557/558 BC556/557/558 : BC559/560 CCBO NF : BC559 BC559 : BC560 BC560 NF Test ... Original
datasheet

3 pages,
67.1 Kb

transistor BC557 base collector emitter BC546 BC556 BC559 BC560 bc560 noise figure ic 558 bc 557 datasheet of pnp transistor BC557 specification of transistor bc 558 BC 557 PNP TRANSISTOR BC557 PNP Transistor information of BC558 BC556/557/558/559/560 BC556 BC556/557/558/559/560 abstract
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Abstract: Transistors UMY3N / UNZ2N / FMY3A / FMY4A / IMZ2A I General Purpose Transistor (Power Management) UMY3N / UMZ2N / FMY3A / FMY4A / IMZ2A · A b so lu te m aximum ratings Parameter Collector-base , * 1 *2 · C irc u it schem atics x: · P a ck a ge , marking, and packaging specifications , characteristics Tn Parameter (Ta*25iD) Symbol BVceo B V ceo B V ebo ICBO Iebo VCE(sBt) hFE fr C ob Min. -6 0 -5 0 -6 - - - 120 ~ ~ Typ. _ - - - 140 4 Max. - - - -0 .1 -0.1 -0 .5 560 - 5 Unit V V V MA ... OCR Scan
datasheet

1 pages,
45.94 Kb

transistor marking code NW Transistor z2n datasheet abstract
datasheet frame
Abstract: www.unisonic.com.tw R 180 ~ 390 S 270 ~ 560 2 of 5 QW-R206-081 QW-R206-081.B 2SC4617 2SC4617 NPN SILICON TRANSISTOR , www.unisonic.com.tw 3 of 5 QW-R206-081 QW-R206-081.B 2SC4617 2SC4617 NPN SILICON TRANSISTOR Collector Saturation Voltage , TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R206-081 QW-R206-081.B 2SC4617 2SC4617 NPN SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD 2SC4617 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR , Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel MARKING ... Original
datasheet

5 pages,
135.37 Kb

2SC4617L-AE3-R 2SC4617-AE3-R 2SA1774 2SC4617 transistor B 560 2SC4617 abstract
datasheet frame
Abstract: 560 140 MHz 4 5 pF 2 of 4 QW-R215-003 QW-R215-003,B Collector Saturation Voltage,VCE(SAT) (V) DC , www.unisonic.com.tw QW-R215-003 QW-R215-003,B 3 of 4 IMT2A PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no , UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT , www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R215-003 QW-R215-003,B IMT2A PNP ... Original
datasheet

4 pages,
191.04 Kb

transistor B 560 datasheet abstract
datasheet frame
Abstract: , Ltd 1 of 4 QW-R215-003 QW-R215-003,B IMT2A PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING , UNIT -60 V -50 -6 -0.1 A -0.1 -0.5 V 120 560 140 MHz 4 5 pF 2 of 4 QW-R215-003 QW-R215-003,B , UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT , Current,IC (mA) Collector Current,IC (mA) IMT2A PNP EPITAXIAL SILICON TRANSISTOR TYPICAL ... Original
datasheet

4 pages,
193.62 Kb

datasheet abstract
datasheet frame
Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 2SA1774 GENERAL PURPOSE TRANSISTOR FEATURES PNP EPITAXIAL SILICON TRANSISTOR 3 2 3 2 1 1 SOT-23 * Excellent hFE linearity * Complements the UTC 2SC4617 2SC4617 SOT-523 ORDERING INFORMATION Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel , 2SA1774G-x-AN3-R SOT-523 Note: Pin Assignment: E: EMITTER B: BASE C: COLLECTOR MARKING , Collector Current PNP EPITAXIAL SILICON TRANSISTOR RATINGS UNIT -60 V -50 V -6 V -0.15 A SOT-23 0.22 ... Original
datasheet

2 pages,
120.02 Kb

sot-523 ba 2SA1774 2SA1774 abstract
datasheet frame
Abstract: www.unisonic.com.tw R 180 ~ 390 S 270 ~ 560 2 of 5 QW-R206-081 QW-R206-081.C 2SC4617 2SC4617 NPN SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD 2SC4617 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR , 2SC4617L-AN3-R 2SC4617L-AN3-R 2SC4617G-AN3-R 2SC4617G-AN3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel MARKING C5X L: Lead Free G: Halogen , 2SC4617 2SC4617 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS ... Original
datasheet

5 pages,
241.44 Kb

2SC4617L-AE3-R 2SC4617 2SA1774 2SC4617 abstract
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Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SC4617 2SC4617 GENERAL PURPOSE TRANSISTOR FEATURES NPN SILICON TRANSISTOR * Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774 2SA1774 ORDERING INFORMATION Ordering , 2SC4617L-x-AN3-R 2SC4617G-x-AN3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing , MAXIMUM RATINGS (Ta = 25°C) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base , 0.1 0.1 560 0.4 3.5 CLASSIFICATION OF hFE RANK RANGE Q 120 ~ 270 R 180 ~ 390 S 270 ~ 560 ... Original
datasheet

5 pages,
247.12 Kb

2SC4617 2SC4617 abstract
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No abstract text available
www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG94_CNV_2.pdf)
NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip
No abstract text available
www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFT93_CNV_2.pdf)
NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip
off-hook or the CLID external transistor switch. If CLID external transistor switch is enabled, a , 28 and 29 must be left opened. 9 5 2 - 0 1 . T B L ST952 ST952 ST952 ST952 2/12 PIN off-hook and CLID exter - nal transistor switches and are sent to the internal transmit demodulator and transistor stage. IDC When D5 input a 5V PP /Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in CLID mode at 1mA max. COM Commun output for off-hook
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5958-v3.htm
STMicroelectronics 25/05/2000 17.33 Kb HTM 5958-v3.htm
or the CLID external transistor switch. If CLID external transistor switch is enabled, a limited Note : Pins 12, 13, 28 and 29 must be left opened. 9 5 2 - 0 1 . T B L ST952 ST952 ST952 ST952 2/12 PIN isolation barrier. These signals control the off-hook and CLID exter - nal transistor switches and are PP /Fmod signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5V PP /Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5958.htm
STMicroelectronics 20/10/2000 19.1 Kb HTM 5958.htm
5.60 0.220 L 0.45 0.60 0.75 0.018 0.024 0.030 L1 1.00 0.039 K 0 o (Min.), 7 o (Max.) 5 V . T B L or the CLID external transistor switch. If CLID external transistor switch is enabled, a limited opened. 9 5 2 - 0 1 . T B L ST952 ST952 ST952 ST952 2/12 PIN DESCRIPTION 5V Fmod D5 D6 9 5 2 - 0 4 . E P S Figure 2 5V Fmod barrier. These signals control the off-hook and CLID exter - nal transistor switches and are sent to the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5V PP /Fmod signal, this pin puts ON
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5958-v2.htm
STMicroelectronics 14/06/1999 15.52 Kb HTM 5958-v2.htm
5.60 0.220 L 0.45 0.60 0.75 0.018 0.024 0.030 L1 1.00 0.039 K 0 o (Min.), 7 o (Max.) 5 V . T B L or the CLID external transistor switch. If CLID external transistor switch is enabled, a limited opened. 9 5 2 - 0 1 . T B L ST952 ST952 ST952 ST952 2/12 PIN DESCRIPTION 5V Fmod D5 D6 9 5 2 - 0 4 . E P S Figure 2 5V Fmod barrier. These signals control the off-hook and CLID exter - nal transistor switches and are sent to the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5V PP /Fmod signal, this pin puts ON
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5958-v1.htm
STMicroelectronics 02/04/1999 15.55 Kb HTM 5958-v1.htm
No abstract text available
www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG541_CNV_3.pdf)
NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip
No abstract text available
www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG198_3.pdf)
NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip
N-channel MOS transistor (OPEN DRAIN output). The HC7266 HC7266 HC7266 HC7266 has an output buffer which is CMOS structure. Positive Supply Voltage TRUTH TABLE A B Y 7266 266 L L H Z L H L L H L L L H H H Z Z: High SPECIFICATIONS Symbol Parameter Test Conditions Value Unit V CC (V) T A = 25 o C 54HC and 74HC -40 5.9 5.9 4.5 I O =-4.0 mA 4.18 4.31 4.13 4.10 6.0 I O =-5.2 mA 5.68 5.8 5.63 5.60 V OL Low MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1934.htm
STMicroelectronics 20/10/2000 10.62 Kb HTM 1934.htm
consumption. The HC266 HC266 HC266 HC266 has a high performance N-channel MOS transistor (OPEN DRAIN output). The HC7266 HC7266 HC7266 HC7266 TABLE A B Y 7266 266 L L H Z L H L L H L L L H H H Z Z: High Impedance INPUT AND 500 V CC = 6 V 0 to 400 M54/M74HC266/7266 M54/M74HC266/7266 M54/M74HC266/7266 M54/M74HC266/7266 3/11 DC SPECIFICATIONS Symbol Parameter 5.8 5.63 5.60 V OL Low Level Output Voltage 2.0 V I = V IH or V IL I O MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. a1 0.51 0.020 B 1.39 1.65 0.055 0.065
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1934-v3.htm
STMicroelectronics 25/05/2000 10.06 Kb HTM 1934-v3.htm