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Part Manufacturer Description Datasheet BUY
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HFA3135IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6 visit Intersil
HFA3096B96 Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012AC visit Intersil
HFA3096B Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN AND PNP, RF SMALL SIGNAL TRANSISTOR, MS-012-AC, MS-012AC, 16 PIN visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil

transistor AY PNP smd

Catalog Datasheet MFG & Type PDF Document Tags

transistor AY PNP smd

Abstract: marking code RAD SMD Transistor npn P relim inary specification PNP resistor-equipped transistor PDTA114EEF 1999 M ay 21 4 Philips S em iconductors P relim inary specification PNP resistor-equipped transistor PACKAGE , - 2 DESCRIPTION PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490 , 98-10-23 1999 M ay 21 5 Philips S em iconductors P relim inary specification PNP , . 1999 M ay 21 6 Philips S em iconductors P relim inary specification PNP resistor-equipped
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transistor AY PNP smd marking code RAD SMD Transistor npn ph TRANSISTOR SMD MARKING CODE A65 smd transistor smd transistor JE MARKING SMD pnp TRANSISTOR ec MAM413 PDTC114EEF SQT490

prtr5v0u6s

Abstract: csp1040 < 900 ppm < 1500 ppm Which packages are Dark Green now? All NXP small-signal discrete SMD plastic , ) transistors single NPN Low VCEsat (BISS) transistors single PNP Low VCEsat (BISS) transistors double Low , / (BISS) transistor module Low VCEsat (BISS) RETs Advantages of low VCEsat (BISS) technology Medium power low VCEsat (BISS) transistors NPN Medium power low VCEsat (BISS) transistors PNP Medium power
NXP Semiconductors
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prtr5v0u6s csp1040 ip4065cx11 TSSOP20 FOOTPRINT BV 9y transistor smd IP4058CX8/LF 2002/95/EC 002EJ PMP5501Y PUMD15 PZTA44 PMBT6429

circuit diagram wireless spy camera

Abstract: 3267 tsop6 (BISS) transistors single PNP Medium power low VCEsat (BISS) transistors single NPN Medium power low VCEsat (BISS) transistors single PNP Low VCEsat (BISS) load switches High voltage low VCEsat (BISS) transistors Low VCEsat (BISS) RETs Low VCEsat BISS) transistor PNP â'" N-channel MOSFET combination , transistors NPN Single transistors PNP Double transistors Single and double switching transistors Medium , details and packing methods SMD Package details and packing methods WLCSP Packing details glass diodes
NXP Semiconductors
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circuit diagram wireless spy camera 3267 tsop6 dual cc BAW62 DFN1006D-2 DFN1010D-3 DFN2020MD-6 DFN1608D-2 DSN0603 DFN1010E-6

702 Z smd TRANSISTOR

Abstract: 702 Z TRANSISTOR smd replaces the traditional PNP pulldown transistor. The composite device switches modes after crossing OV , â'¢ Electrically Screened to SMD# 5962F9683101VPA The HS-1212RH is a dual closed loop buffer , gain be needed at a future date. Detailed Electrical Specifications are contained in SMD , (http://www.semi.harris.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation , evaluated using the HA5023 Evaluation Board, slightly modified as follows: 2. a. For Ay = +1 evaluation
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702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 340MH MIL-PRF-38535 43G2271 1N4002

transistor AY PNP smd

Abstract: TRANSISTOR SMD MARKING M Y GENERAL FEATURES Easy Gate 1 switch-off with PNP switching transistor inside PLL Low noise figure, high , , SOT343R and SOT363 SMD packages S505TYRW S506TYRW inalog and Digital Tuner Application KEY APPLICATION , (J8ìjV All pfoOjds PLL-lCs witn PSP switchng transistor Package Forms, Marking and Dimensions S0T343R , Woimation. jne contact. motflMcOmMi.c*« w vini oor «eò tilt VISHAY the americas VS*AY AMERICAS
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S506TY S505TY S505TYR S506TYR TSDF02830YL TSDF02830YR TRANSISTOR SMD MARKING M Y transistor smd uw smd marking m4 vishay cross TSDF02830Y F02830YR

smd transistor 7k

Abstract: OF TRANSISTOR AT 30B to92 -74) Combining an NPN or PNP transistor with low VCEsat and high current capability, and an ultra low VF Schottky , power dissipation 1 A current capability Small plastic SMD package PNP · Discrete DC/DC , PNP Low VCEsat (BISS) 2 A, 40 V BCP51-10 Single PNP Medium Power Transistor 1 A, 45 V BCP52 Single PNP Medium Power Transistor 1 A, 60 V BCP52-10 Single PNP Medium Power Transistor 1 A, 60 V BCP54 , PSS8550C Single PNP Medium Power Transistor 1 A, 25 V PSS8550D Single PNP Medium Power Transistor 1 A
Philips Semiconductors
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LPC2100 BUK1M200-50SDLD smd transistor 7k OF TRANSISTOR AT 30B to92 Transistor SMD SOT363 SC70 transistor digital 47k 22k PNP NPN SOT346 ZENER LPC210 PH3230S PH8230E NE57810
Abstract: performance compared to conventional monolithic regulators. The CS-8128 with a TTP42 PNP transistor , ). 10 sec. max, 260°C peak Reflow (SMD styles only , characteristics of external transistor. 16 25 250 ^Dei ^ VD C T Note 2: Delay Time = , shutdow n control input. 7 Pwr Gnd Ground connection 8 Vour Supplies base current to PNP pass transistor or threshold volt­ age to FET pass transistor. Typical Perform ance -
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CS-8128N8 CS-8128D8 CS-8128DR8

smd transistor 1AM

Abstract: transistor types full compared to conventional monolithic regulators. The CS-8128 with a TTP42 PNP transistor typically provides , Overvoltage shutdow n control input. Ground connection Supplies base current to PNP pass transistor or threshold volt age to FET pass transistor. Typical Performance Characteristics D in p n u t V o I|. ij>l , ). 10 sec. max, 260°C peak Reflow (SMD styles only , on characteristics of external transistor. Note 2: Delay Time = -= Coeiay x
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smd transistor 1AM transistor types full cmos transistor 0.35 um smd 1AM 1am smd transistor
Abstract: , Video Closed Loop Buffer A g st 1996 uu Features Description â'¢ Electrically Screened to SMD , . , address is (http://www.semi.harris.com/datasheets/smd/smd_xref.ht ml). SMD numbers must be used to order , minimizing quies­ cent supply current. In this approach, a composite device replaces the traditional PNP pulldown transistor. The com­ posite device switches modes after crossing OV, resulting in added -
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HS-1412RH 5962F9683401VCA

2N7002 NXP MARKING

Abstract: TL431 transistor 139 et VCEsat (BISS) transistors Low VCEsat (BISS) RETs Low VCEsat (BISS) transistor PNP ­ N-channel MOSFET , conductivity BISS transistor MOSFET-low VCEsat combination (p. 67) P-Ch. MOSFET, MOSFET-Schottky (p. 76) MOSFET-low VCEsat BISS transistor combination (p. 67) With exposed heat sink for excellent thermal , -73) Power-SO8 (LFPAK) Through-hole and SMD packages with total length of + 9 mm SMD packages with total , -73) Power-SO8 (LFPAK) Small SMD packages with 8 pins and more Small SMD packages with 8 pins and more
NXP Semiconductors
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2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern SC-76 SC-101 SC-75 SC-70 TSSOP10 HVQFN32
Abstract: B e > x V , or R b / R e S y, which are equivalent conditions under which the transistor m ay be cut , iconductors Small-signal Transistors S ec o n d letter General Version letter A letter m ay be added , , low power diode; variable capacitance transistor; low power, audio frequency transistor; power, audio frequency diode; tunnel transistor; low power, high frequency multiple of dissim ilar devices/m iscellaneous , ; magnetic sensitive transistor; power, high frequency photocoupler radiation detector; e.g. high sensitivity -
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TRANSISTOR SE 135

Abstract: P13TP compared to conventional m ondithic regulators. The CS-8128 w ith a TIP42 PNP transistor typically provides , characteristics of external transistor. Note 2 Delay Time = - C xV dtc_ _ ç De]ay x 3.5 , OE) Y Delay Q - 1O llA D ^ay Current Bandgap R Terence 1.25V A ; Error . Amp Ldching Discharge Reset Comparator R Dé ay Comparator R E SE T I Cherry Semiconductor Rev , ).10 sec. max, 260°C peak Reflow (SMD styles only
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TRANSISTOR SE 135 P13TP

TRANSISTOR S1A 64 smd

Abstract: ip4065cx11 aspects. Have a look at these five new SMD packages that take discretes to the next level : Leadless , halogen-free products Page 87 Since 2009 all NXP small-signal discrete SMD packages on the market are , transistors (RETs) Low VCEsat (BISS) transistors single NPN Low VCEsat (BISS) transistors single PNP Low , ) transistors Low VCEsat modules - Schottky diode / (BISS) transistor Low VCEsat (BISS) RETs Advantages of , NPN Medium power low VCEsat (BISS) transistors PNP Medium power general purpose transistors
NXP Semiconductors
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TRANSISTOR S1A 64 smd KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ NX1117I33Z PTVS64VP1UP PUMH18 PZU36 PSMN8R3-40YS PTVS64VS1UR PUMH19
Abstract: the traditional PNP pulldown transistor. The composite device switches modes after crossing OV , loop gain be needed at a future date. Detailed Electrical Specifications are contained in SMD , (http://www.semi.harris.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation Hard ened Products. August 1996 Features · Electrically Screened to SMD# 5962F9683101VPA · , (Ay = +2) FIGURE 2. MODIFIED EVALUATION BOARD SCHEMATIC HARRIS SEMICONDUCTOR HRS023 -
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1-800-4-HARRIS
Abstract: traditional PNP pulldown transistor. The com­ posite device switches modes after crossing 0V, resulting in , Electrically Screened to SMD 5962F9683001VPA The HS-1145RH is a high speed, low power current feed­ back , SMD 5962F9683001VPA, available on the Harris Website or AnswerFAX systems (document #968300). â , of Harris Part Numbers to SMDs. The address is (http://www.semi.harris.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation Hard­ ened Products. Applications â -
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360MH
Abstract: . In this approach, a composite device replaces the traditional PNP pulldown transistor. The com  , Screened to SMD#5962F9683401VCA MIL-PRF-38535 Class V Com pliant User Programmable For Closed-Loop Gains , ) Detailed Electrical Specifications are contained in SMD #5962F9683401VCA, available on the Harris Web site , address is (http://www.semi.harris.com/datasheets/smd/smd_xref.ht ml). SMD numbers must be used to order , = °o(A v = +1) or 0£1 (Ay = +2) Driving Capacitive Loads Capacitive loads, such as an A/D -
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Abstract: re-driver w hich con trols a n external PN P pass transis tor, a n d a low side driv er w hich m ay be u sed , . 429mW Lead T em perature Soldering Reflow (SMD styles o nly) 60 sec. m ax above 183°C, 230°C peak , ENABLE2 ENABLE14V DRIVE 14V VlN 5V standby regulator o u tp u t voltage. L ow side driv er (m ay be used to d rive a n external PNP) 5V p re -re g u la to r's o u tp u t w hich p ro v id es bias to an external PN P transistor. 14V p re-regulator's feedback in p u t w hich senses the d rain voltage on the -
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MS-013 CS8351XDW16 CS8351XDWR16
Abstract: current. In this approach, a composite device replaces the traditional PNP pulldown transistor. The com  , to SMD 5962F9683001VPA The HS-1145RH is a high speed, low power current feed­ back amplifier , specifications are contained in SMD 5962F9683001VPA, available on the Harris W ebsite or AnswerFAX systems , Harris Part Numbers to SMDs. The address is (http://www.semi.harris.com/datasheets/smd/smd_xref. html). SMD numbers must be used to order Radiation Hard­ ened Products. Applications Multiplexed Flash -
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IL-PRF-38535 10OOV/

02p SMD TRANSISTOR

Abstract: CLC220 thin-film resistor/bipolar transistor technology. The CLC221AI is specified over a temperature range of -2 5 , compliant with MIL-STD-883, Level B. Both devices are packaged in 12-pin metal TO-8 cans. The D ESC SMD , exceeding transistor collector-emitter breakdown ratings. Recom m ended V _ is ± 15V. Comlinear reserves , a se Av= +4 Gain Ay = +50 A* = +20 ^ ¡£ Phase > < D A ° cn «2 Inverting G ain and P hase B ro adb and G ain (In v, Non-lnv) Av ~ -50 non-inverting P h ase K -W Ay = + 4 03 J= cn c
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CLC221 02p SMD TRANSISTOR CLC220 CLC221A 170MH

lm35b

Abstract: ka2515 approximately 1 diode drop above ground to bias the on-chip vertical PNP transistor for output current sinking , available per SMD #5962-8771001 LM158A Is available per SMD #5962-8771002 > 1999 National Semiconductor , input leads is driven negative. It is due to the collector-base junction of the input PNP transistors , is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the , the input current is out of the IC due to the PNP input stage. This current is essentially constant
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LM158 lm35b ka2515 smd diode SL V2 transistor d381 lm35ban LM158AH LM158/LM258/LM358/LM2904
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