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LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor A82

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transistor A82

Abstract: LEVEL OUTPUT: +20 dBm (TYP.) LOW NOISE: 2.8 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) A82/ SMA82 V3 Product Image Description The A82 RF amplifier is a discrete hybrid design, which uses thin film , Information Part Number A82 SMA82 CA82 Package TO-8 Surface Mount SMA Connectorized Electrical , Parameter Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc , Drawing: TO-8 * A82/ SMA82 V3 WEIGHT: 1 gram (0.04 oz.) max Outline Drawing: Surface Mount
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transistor A82 MIL-STD-883

transistor A82

Abstract: OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP.) LOW OUTPUT VSWR: 1.1:1 (TYP.) A82-1/ SMA82-1 V3 Product Image Description The A82-1 RF amplifier is a discrete hybrid design, which uses , available. Ordering Information Part Number A82-1 SMA82-1 CA82-1 Package TO-8 Surface Mount SMA , ) Thermal Data: VCC = +15 VDC Parameter Thermal Resistance jc Transistor Power Dissipation Pd Junction , Typical Performance Curves at +25°C Outline Drawing: TO-8 * A82-1/ SMA82-1 V3 WEIGHT: 1 gram (0.04
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A82-1/ A82-1

transistor A82

Abstract: sma82 A82-1 / SMA82-1 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features · · · · Product , (TYP.) LOW OUTPUT VSWR: 1.1:1 (TYP.) Description The A82-1 RF amplifier is a discrete hybrid , -883 environmental screening is available. Ordering Information Part Number Package A82-1 TO-8 SMA82 , / 1.5:1 Transistor Power Dissipation Pd 0.273 W 50 52 54 Junction Temperature Rise , ) or information contained herein without notice. A82-1 / SMA82-1 Cascadable Amplifier 20 to 250
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transistor A82

Abstract: SMA82 A82 / SMA82 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features · · · · Product , (TYP.) HIGH GAIN: 24.5 dB (TYP.) Description The A82 RF amplifier is a discrete hybrid design , screening is available. Ordering Information Part Number Package A82 TO-8 SMA82 Surface , / 1.9:1 Transistor Power Dissipation Pd 0.273 W 50 52 54 Junction Temperature Rise , ) or information contained herein without notice. A82 / SMA82 Cascadable Amplifier 20 to 250 MHz
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CA82

transistor A82

Abstract: A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER · HIGH REVERSE ISOLATION: >28.5 dB (TYP.) · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · HIGH GAIN: 24.5 dB (TYP.) Specifications (Rev. Date: 6/02)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation , Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 144°C/W 0.273 W 39°C Outline Drawings Package Figure Model TO-8 BG A82 Surface Mount AA SMA82 SMA Connectorized CE CA82
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A82/SMA82

transistor A82

Abstract: A82 transistor A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER · HIGH REVERSE ISOLATION: >28.5 dB (TYP.) · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · high gain: 24.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small , Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 144°C/W 0.273 W 39°C Outline Drawings Package Figure Model TO-8 BG A82 Surface Mount AA
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A82 transistor

transistor A82

Abstract: A82 transistor A82-1/SMA82-1 20 TO 250 MHz CASCADABLE AMPLIFIER · HIGH REVERSE ISOLATION: >34 dB (TYP.) · HIGH OUTPUT POWER: +15 dBm (TYP.) · HIGH GAIN: 19.0 dB (TYP.) · LOW OUTPUT VSWR: 1.1:1 (TYP.) Specifications (Rev. Date: 1/01)* Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse , 0.5 W 125°C Thermal Data: Vcc = 15 Vdc Thermal Resistance jc Transistor Power Dissipation Pd , TO-8 BG A82-1 Surface Mount AA SMA82-1 SMA Connectorized CE CA82-1 Specifications subject to
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A82-1/SMA82-1

WJA8

Abstract: WJ-A82 u u U A82 / SMA82 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 28.5 dB (TYR) HIGH LEVEL OUTPUT: +20 dBm (TYR) LOW NOISE: 2.8 dB (TYR) HIGH GAIN: 24.5 dB (TYR) A82 Typical Guaranteed 0° to 50°C Frequency (Min.) Small Signal Gain (Min , 1.7:1 1.7:1 52 mA 20-250 M Hz 22.5 dB ± 1 .0 dB 4.0 dB +18.0 dBm 1.9:1 1.9:1 54 mA SM A82 C , Transistor Power Dissipation P q| . 0.2 7 3 W Junction Temperature Rise Above C ase Tjc
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WJ-A82 WJA8 WJ-CA82 1-800-WJ1-4401

BC516

Abstract: BC517 N AMER PHILIPS/DISCRETE biE D â  ^53^31 gü2?551i T3à bUblb IAPX A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. QUICK REFERENCE DATA Collector-emitter voltage (open base) -vCEO max. 30 V Collector-base voltage (open emitter) -vCBO max. 40 V Collector current -'c max. 400 mA Junction temperature Ti , DATA Fig. 1 TO-92. Pinning 1 = emitter 2 = base 3 = collector 4.8 max I 2.54 -¡8-2- > ns
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BC516 NECC-C-002 53T31 00H75S5

Transistor BC 457

Abstract: WJ-A82-1 uuU A82-1 /SMA82-1 20 to 250 MHz TO-8 CASCADABLE AMPLIFIER AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: > 34 dB (TYP.) HIGH OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP) LOW OUTPUT VSWR : 1.1:1 (TYP.) O utline D raw ings A82-1 Specifications'* Characteristics Typical Guaranteed 0° - 50°C -54°C - +85°C 20-250 MHz 17.5 dB ±0.7 dB 3.5 dB +14.0 dBm 1.9:1 1.4:1 52 mA 20-250 MHz , . 144°C/W Transistor Power Dissipation P ^ . 0.273 W Junction Temperature Rise
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WJ-A82-1 Transistor BC 457 transistor 9822 WJA82 bc 457 Transistor bc 149 transistor 50-QHM WJ-CA82-1 J1-4401
Abstract: â y/ } rtf, wrr=r< £7 Ã' whmmmmmv Mm PA2 Series W/TIP-29C (TO-220) TRANSISTOR i , DESCRIPTION OF CURVES A. N.C. Horiz.Device Only Mounted to G-10. B. N.C. Horlz. & Vert. With Dissipator. C. 200 FPM w/Diss. D. 500 FPM w/Diss. E. 1000 FPM w/Dlss. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 POWER , -29C (TO-220) TRANSISTOR r B 1 / 1 / t /c D f / / / A E , («.82) 1 IERC PART NO. Semiconductor Accommodated Max. Unplated Com'l. Black Anodlze Mil -
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T0-126 T0-127 T0-220
Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR , Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER , QGD ID = â'82 A 21 nC VF(S-D) IF = â'82 A, VGS = 0 V 0.96 Reverse Recovery Time trr IF = â'82 A, VGS = 0 V, 48 ns Reverse Recovery Charge Qrr di/dt = â'100 A/µs , '20 V â'8 V -30 -9 -20 -6 VGS -10 -3 VDS ID = â'82 A 0 -1 -10 -100 Renesas Electronics
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Abstract: TRANSISTOR NP82P04PLF SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION , , 15 nC QGD ID = â'82 A 21 nC VF(S-D) IF = â'82 A, VGS = 0 V 0.96 Reverse Recovery Time trr IF = â'82 A, VGS = 0 V, 48 ns Reverse Recovery Charge Qrr di/dt = â , '20 V â'8 V -30 -9 -6 -20 VGS -3 -10 VDS ID = â'82 A 0 -1 -10 0 Renesas Electronics
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2sD1650

Abstract: TRANSISTOR 2SD1650 55? SANYO T0-3FXS I 2SD1650 NPN Triple Diffused Planar Type Silicon Transistor For Horizontal Output (Built-in Damper Diode) Features â'¢High Breakdown Voltage and High Reliability.:VCBO=1500V, â'¢High Switching Speed.:tf=0.7us(Max) â'¢Capable of being mounted easily due to one-point fixing type plastic mold package. â'¢Collector Metal(Fin) is fully covered with Mold Resin. Absolute Maximum Ratings , =3A/Ib1=0.8A,IB2 =-1.6A 0.7 us Vcc=200V,Rl=66.7ohm Switching Time Test Circuit f>wxmut.o«i4y&1x "«82
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TRANSISTOR 2SD1650

STELLEX

Abstract: transistor A82 A82/SMA82 20 TO 250 MHz CASCADABLE AMPLIFIER · HIGH REVERSE ISOLATION: >28.5 dB (TYP.) · HIGH LEVEL OUTPUT: +20 dBm (TYP.) · LOW NOISE: 2.8 dB (TYP.) · high gain: 24.5 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Guaranteed 0° to 50°C ° ° Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation Noise Figure , Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 144
Stellex Microwave Systems
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STELLEX
Abstract: A82-1/SMA82-1 20 TO 250 MHz CASCADABLE AMPLIFIER · HIGH REVERSE ISOLATION: >34 dB (TYP.) · HIGH OUTPUT POWER: +15 dBm (TYP.) · HIGH GAIN: 19.0 dB (TYP.) · LOW OUTPUT VSWR: 1.1:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Guaranteed 0° to 50°C ° ° -54° to +85°C ° ° Frequency 10.0-300.0 MHz 20.0-250.0 MHz 20.0-250.0 MHz Small , Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc 144 Stellex Microwave Systems
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A1282 transistor

Abstract: T8.5000.A348.1000 +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 17.7 5.5 â'".4 â'"8.2 â'"22.8 â'"36.1 â'"49.4 â'"63.0 â'"76.8 â'"90.9 â'"105.4 â'"120.1 â , 22.6 18.5 11.8 4.3 â'"1.1 141.6 82.0 58.4 37.0 17.7 5.5 â'".4 â'"8.2 â'"22.8 â'"36.1 â
Teledyne Cougar
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A1282 transistor T8.5000.A348.1000 A1712 MIL-HDBK-217E

2SC3175

Abstract: SANYO No.1311 2SC3175 NPN Epitaxial Planar Type Silicon Transistor For CRT Horizontal Deflection Output Features : â'¢ High switching speed â'¢ Especially suited for use in high-definition CRT display(Vcc=12 to 24V) â'¢ Wide ASO and durable against breakdown Absolute Maximum Ratings at Ta=25°c Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Peak , INPUT o- IB1 â'¢iL PW=20As Duty Cycled |< 50 .Re -m- ¡82 VR 100u" OUTPUT â'"O 470 u
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SC-46 5043KI

NT 407 F TRANSISTOR

Abstract: NT 407 F MOSFET TRANSISTOR SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET ?- L MJ K$G 407,- %*8,23.-, -',).6.,+ OPP RMP MUP ;OIP> XYP ;UYP> Inverse diode ® SEMITOP 3 , (74&.0.4& %:.+, ),2(&.) ; ?2,0)8 *,)80%7%/@ A8%2* .0*,20(7 )%00,)*.%0- (0+ 7%3 .0+4)*(0), )(- , ,TRANSISTOR Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C Fig. 5 Breakdown voltage vs , SK 260MB10 MOSFET,TRANSISTOR Dimensions in mm ADQQeA?e< 51Be
SEMIKRON
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NT 407 F TRANSISTOR NT 407 F MOSFET TRANSISTOR
Abstract: â'73 â'78 â'80 dB min dB min dB typ dB max dB typ dB typ â'82 â'82 5 18 55 8 â'82 â'82 5 18 55 8 dB typ dB typ ns typ ps typ MHz typ MHz typ 12 ±1.5 +1/â , dB typ dB typ â'82 â'82 5 18 74 10 â'82 â'82 5 18 74 10 dB typ dB typ ns , â'"80 â'"82 â'"84 69.0 VDD = 3.6V â'"86 04903-012 68.5 68.0 67.5 100 1000 Analog Devices
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12-/10-/8-B AD7276/AD7277/AD7278 AD7476 AD7476A 12-/10-/8-BIT EVAL-AD7276CBZ
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