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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

transistor A673

Catalog Datasheet MFG & Type PDF Document Tags

transistor A673

Abstract: A673 transistor +150°C +125°C 300 0 θJC Active Transistor Power Dissipation Junction Temperature Above Case , .576 .560 .550 .546 .535 .523 .513 83.2 21.1 â'"24.3 â'"67.3 â'"97.9 â'"114.5 â
Agilent Technologies
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TRANSISTOR A1625

Abstract: transistor A673 Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , Ang â'"6.0 â'"11.5 â'"17.5 â'"23.1 â'"29.2 â'"35.7 â'"42.0 â'"48.3 â'"54.7 â'"61.1 â'"67.3
Teledyne Cougar
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TRANSISTOR A1625

Abstract: a1625 Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , Ang â'"6.0 â'"11.5 â'"17.5 â'"23.1 â'"29.2 â'"35.7 â'"42.0 â'"48.3 â'"54.7 â'"61.1 â'"67.3
Agilent Technologies
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transistor a920

Abstract: transistor A915 '"62 to +150°C +125°C 18 Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"24.8 â'"33.3 â'"39.4 â'"45.1 â'"50.9 â'"55.2 â'"60.7 â'"64.0 â'"67.3 â'"69.9 â'"73.8 â'"77.6 â
Agilent Technologies
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Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , â'36.8 â'67.3 â'92.0 â'109.5 â'125.4 â'140.0 â'151.1 â'161.5 â'172.4 177.0 169.8 , 0.157 0.154 0.150 0.147 â'23.4 â'39.8 â'51.9 â'58.7 â'61.7 â'63.7 â'67.3 â'71.8 â Renesas Electronics
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PU10103EJ01V0DS

transistor A431

Abstract: A641 NPN transistor DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES â'¢ Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz 2.1±0.1 NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 â'¢ A Super Mini Mold Package Adopted Taping , '"55.8 â'"57.4 â'"58.1 â'"59.3 â'"59.8 â'"61.4 â'"62.2 â'"63.3 â'"63.8 â'"65.1 â'"66.2 â'"67.3 â
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transistor A431 A641 NPN transistor TRANSISTOR A107 PA808T-T1 2SC5184
Abstract: DISCRETE SEMICONDUCTORS DAT M3D091 BLF548 UHF push-pull power MOS transistor Product , UHF push-pull power MOS transistor BLF548 PIN CONFIGURATION FEATURES â'¢ High power gain â , transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The , 3 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for , Product specification UHF push-pull power MOS transistor BLF548 LIMITING VALUES In accordance Philips Semiconductors
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MSB008 MBB157 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA75
Abstract: DISCRETE SEMICONDUCTORS DAT M3D076 BLF544 UHF power MOS transistor Product , UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES â'¢ High power gain PIN , D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads , Philips Semiconductors Product specification UHF power MOS transistor BLF544 LIMITING VALUES , Product specification UHF power MOS transistor BLF544 CHARACTERISTICS Tj = 25 °C unless Philips Semiconductors
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MAM390
Abstract: TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP , '51.6 â'53.7 â'56.0 â'58.6 â'61.3 â'64.3 â'67.3 â'70.4 â'73.6 â'76.8 â'79.9 â'83.0 â , '56.9 â'60.5 â'63.8 â'67.3 â'70.7 â'74.3 â'77.8 â'81.3 â'84.9 â'88.8 â'92.6 â'96.5 â , '51.1 â'53.4 â'55.9 â'58.6 â'61.5 â'64.3 â'67.3 â'70.3 â'73.2 â'76.2 â'79.2 â'82.4 â Renesas Electronics
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PU10151EJ01V0DS
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , '"46.5 â'"48.7 â'"50.6 â'"53.4 â'"55.9 â'"58.4 â'"61.1 â'"63.9 â'"67.3 â'"70.6 â'"74.0 â'"78.0 â Renesas Electronics
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A1309

Abstract: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 13 581â'"2 94 9280 2 3 BFQ81 Marking: RA Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = , '"30.3 â'"35.3 â'"37.3 â'"38.7 â'"40.8 â'"45.0 â'"50.4 â'"54.5 â'"59.0 â'"67.3 â'"76.1 â'"81.9 â
Vishay Intertechnology
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A1309 88/540/EEC 91/690/EEC D-74025

nec a1010

Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS , '"52.1 â'"55.7 â'"60.4 â'"61.6 â'"63.8 â'"64.1 â'"67.3 â'"68.6 â'"71.9 â'"74.2 â'"77.3 V CE = 3
Renesas Electronics
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nec a1010
Abstract: TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4.5 GHz Renesas Electronics
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a1069 nec

Abstract: TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE â' HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS , 0.876 0.859 0.842 0.832 0.818 0.806 0.793 0.785 0.772 0.762 â'55.3 â'61.5 â'67.3 â , 0.394 â'47.8 â'51.7 â'55.2 â'58.7 â'61.8 â'64.6 â'67.3 â'69.7 â'71.4 â
Renesas Electronics
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a1069 nec
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS , '"55.8 â'"57.4 â'"58.1 â'"59.3 â'"59.8 â'"61.4 â'"62.2 â'"63.3 â'"63.8 â'"65.1 â'"66.2 â'"67.3 â Renesas Electronics
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transistor a2160

Abstract: a2324 heterojunction bipolar transistor (HBT) process and has an ESD rating of ±1.5 kV (Class 1C). The device is , '41.9 â'67.3 4.5 dB dB dB dB dBm dBm dBc dBc dB 13.4 ±0.04 ±0.20 ±0.04 16.0 30.7 , -C PKG-003480 0.56 0.36 Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK
Analog Devices
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transistor a2160 a2324 a2530 a2746 ADL5601 0603LS-NX 09-12-2013-C ADL5601ARKZ-R7 ADL5601-EVALZ D08219-0-11/13

nec a1232

Abstract: TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 à , '"57.0 â'"58.2 â'"58.7 â'"60.3 â'"62.0 â'"65.1 â'"67.3 â'"70.4 â'"72.3 â'"75.4 â'"78.5 â'"84.2 â
Renesas Electronics
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nec a1232
Abstract: supply pin, which biases the internal input transistor. This pin should be externally equipped with , The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor, connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select , inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of , '22.8 â'28.1 â'33.2 â'39.0 â'45.1 â'52.4 â'59.8 â'67.3 â'75.8 â'83.9 â'93.0 â Renesas Electronics
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Abstract: TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , 0.211 0.209 â'56.5 â'57.9 â'59.5 â'60.9 â'62.5 â'64.0 â'65.7 â'67.3 â'69.3 â Renesas Electronics
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PU10070EJ01V0DS

MARKING A581

Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER , 0.360 0.313 0.280 0.254 0.234 â'26.7 â'43.4 â'52.5 â'57.6 â'60.8 â'63.3 â'65.3 â'67.3
Renesas Electronics
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MARKING A581
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