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transistor A44

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: A44 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES * High voltage , Page 1 of 3 A44 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Silicon Plastic-Encapsulate Transistor Any changing of specification will not be informed individual Page 2 of 3 A44 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor TO SeCoS
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BR A44 datasheet of ic 555 A44 npn IC 555 270TYP 050TYP
Abstract: Resistance Өj-c Per one power transistor Junction Temperature Tj max Operating Substrate , Thermal Resistance Өj-c Per one power transistor Junction Temperature Tj max Operating , °C/W 150 Per one power transistor V 1.6 Tstg Allowable Time for Load Short-circuit , typ 20 to20k 0.4 96 100 ±44 1k 10 THD 1 ±44 20 to20k THD 2 ±44 1k Frequency Characteristics *1 fL, fH ±44 Input Impedance ri ±44 VNO  SANYO Electric
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stk433-870 ANDSTK433000NE STK433-000N-E STK433-040N-E STK433-060N-E STK433-130N-E STK433-330N-E
Abstract: '±10 V Thermal resistance j-c Per one power transistor 1.6 Junction temperature Tj , *2 Parameter Symbol Frequency characteristics *1 *1 ±44 20 to 20k 0.4 ±44 1k 10 THD 1 ±44 20 to 20k ±44 1k THD min [%] 96 1k typ max , ±53 No load Output neutral voltage VN ±53 VST ON ±44 Stand-by VST OFF ±44 Operation #13 Stand-by OFF threshold *5 W 0.4 5.0 VNO *5 Unit 100 150 1.0 ±44 ON Semiconductor
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ENA2107 ENA2101A ENA2107A STK433-840N-E STK433-890N-E A2107-11/11
Abstract: power transistor 1.6 Junction temperature Tj max Should satisfy Tj max and Tc max 150 , *1 *1 ±44 20 to 20k 0.4 ±44 1k 10 THD 1 ±44 20 to 20k ±44 1k , ±44 Stand-by VST OFF ±44 Operation #13 Stand-by OFF threshold *5 W 0.4 5.0 VNO *5 Unit 100 150 1.0 ±44 ±44 PO [W] Quiescent current #13 Stand-by ON , each power transistor should not exceed 150°C Pd ï'´ c-a + Pd/N ï'´ j-c + Ta ï'¼ 150 ON Semiconductor
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150W TRANSISTOR AUDIO AMPLIFIER ENA2102A ENA2106A A2102-11/11
Abstract: A44 TO-92 Plastic-Encapsulate Transistors Transistor(NPN) FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.2 A Collector-base voltage V (BR)CBO :400 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C TO-92 1.EMITTER 2 , ,NCRMALIZED CURRENT GAIN A44 o Ta=125 C 140 VCE=10V 120 100 o 25 C 80 60 40 o , LIMIT 2.0 1.0 A44 VALID FOR DUTY CYCLE Philips Semiconductors
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ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 DN-40 74ABT126 74ABT2240 74ABT2245 74ABT5074 74ABT648
Abstract: A44 A44 TO-92 TRANSISTOR (NPN) FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic -
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Abstract: max #13 voltage Thermal Resistance Өj-c Per one power transistor Junction Temperature , transistor Junction Temperature Tj max Operating Substrate Temperature Tc max Storage , 150 Per one power transistor V 1.6 Tstg Allowable Time for Load Short-circuit *4 V , 0.4 96 100 ±44 1k 10 THD 1 ±44 20 to20k THD 2 ±44 1k Frequency Characteristics *1 fL, fH ±44 Input Impedance ri ±44 VNO ±53 Rg=2.2kΩ Quiescent WEJ Electronic
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To92 transistor
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR (NPN) 1. BASE FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 SANYO Electric
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120517JI/AS
Abstract: . 7. PBSS5320T Low VCEsat (BISS) transistor in SOT23 8. PIP202-12M An innovative powertrain , pass transistor to maintain an 85 uA typical supply current, independent of the load current and , 7. PBSS5320T PNP low VCEsat (BISS) transistor in SOT23 Philips is further enlarging its , Number PHB64N03LT General Application Discretes PBSS5320T Low VCEsat (BISS) Transistor PBSS5350T Low VCEsat (BISS) Transistor PBSS4320T Low VCEsat (BISS) Transistor PBSS4350T Low VCEsat (BISS Jiangsu Changjiang Electronics Technology
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Abstract: Maximum Ratings at Ta = 25°c Parameter Symbol Conditions Ratings Unit Maximum supply voltage Vcc max ±44 V Thermal resistance 6j-c Per power transistor 1.7 °c/w Junction temperature Tj 150 X Operating , transistor limiting resistors during load short circuits and the peak current that flows through them when , -070 40W x 2 0.4 - ±44 ±30 ±24 STK400-080 45W x3 STK401-080 45W x2 - ±45 ±31 ±25 STK400-090 50W x3 , ambient temperature. Condition 2: Power transistor junction temperature, Tj, not to exceed 150°C. Pd x Philips Semiconductors
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PMN27UN PMN28UN SCC2691AC1 b48 DIODE schottky 74HC1G14 30689 NE5232 N40 DIODE P89LPC932 LPC900 BZA418A 80C51 BUK9107-55ATE MAX8878
Abstract: Vccmax ±44 V Thermal resistance 9j-c Per power transistor 1.7 °c/w Junction temperature Tj 150 °c , transistor limiting resistors during load short circuitsand the peak current that flows through them when , ±41 ±28 ±23 ST K400-070 40W x 3 ST K401-070 40W x 2 0.4 - ±44 ±30 ±24 STK400-080 45W x 3 ST , °C.(1) where Ta is the guaranteed maximum ambient temperature. Condition 2: Power transistor junction , the number of power transistors and 6j-c is the power transistor thermal resistance per transistor -
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STK400-070 transistor 6c x 2 x 40w amplifier 36v 10W Audio amplifier 45W Audio amplifier MG-200 STK400-010 STK400-000 STK401-000
Abstract: WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It , systems, oscilloscopes, spectrum analysers etc. The transistor features extremely high power gain coupled , transistor N AMER PHILIPS/DISCRETE fab53*i31 0017Ã"75 5 â  25E D BFQ51C Tâ'"31â'"17 CHARACTERISTICS Tj , wideband transistor s-parameters (common-emitter) at -Vce = 10 V; Tamt, = 25 °C; typical values. Ic mA f , / 47,2° 0,53/â'"44,5° 15,9 1000 0,47/-148,5° 3,7/ 88,1° 0,094/ 46,8° 0,50/â'"46,2° 13,7 1200 -
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STK401-070 DBA40C FB75 STK400-020 STK401 60697HA 30795TH
Abstract: maximum supply voltage (Vcc max = ±44 V) â'¢ Low thermal resistance (0j-c = 2.1 °CAV) â'¢ High , Unit ±44 V +6.0 A v Cc max Tr8, 10, 18, 20, 28, 30 Tr6, 10, 18, 20, 28, 30 (per transistor) 2.1 °C/W Junction temperature Ti 150 â'¢c Operating substrate temperature , operating power dissipation, and Pc be the power dissipation per power transistor. The required heat sink , : The power transistor junction temperature must not exceed 150°C. Pd x 0c-a + Pc x 0j-c + Ta < 150 -
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BFP90A marking code ci SOT173 MARKING 0 SOT173 SOT-173 T-31-17 7Z86991 53T31
Abstract: Ratings Unit Maximum supply voltage Vcc max ±44 V Maximum collector current "c Tr9,11,20,22 6.0 A Thermal resistance ej-c Tr9,11,20,22 (per transistor) 2.7 °C/W Junction temperalure Tj 150 °C , e 1 « -2 z 3 -4 ¿12 ±16 «20 Ã24 12® £32 236 Ã40 £44 240 Supply voltage, Vcc â'" V VG, e â'" f 2 3 5 7 io § 1 2 s 5 ^cco â Frequency, I â'"kHz Power transistor ASO , substrate internal power dissipation and Pc represents the power dissipation per transistor. The heatsink -
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STK392-020 STK392-000
Abstract: Product Description Stanford Microdevices SGA-4463 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high , D C bi as stabi li ty over temperature. VS RBIAS LC A44 CB 1 uF 1000 pF CD , A44 Connection to ground. Use via holes for best performance to reduce lead inductance as close , A44 designator on the top surface of the package. RF OUT/ RF output and bias pin. DC voltage is -
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STK391-020 STK4274 a9ca dc voltmeter circuit diagrams stk427 heatsink design
Abstract: Product Description Stanford Microdevices SGA-4486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes , stabi li ty over temperature. VS 1 uF RBIAS A44 CB 1000 pF CD LC Mounting , marked with an A44 designator on the top surface of the package. 3 4 A44 Pin # Function Stanford Microdevices
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4463 B A44 marking amplifier pin configuration transistor A44 ZL 15 a DC-3500 EDS-100644
Abstract: TPC8113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8113 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm , â'44 JEDEC â'• Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W JEITA , ), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic , (Note 1) Test Condition Min Typ. Max Unit IDRP    â'44 A ï Stanford Microdevices
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EDS-100643
Abstract: supply voltage Vcc max(1) Rl = 6 a ±44 V Thermal resistance 6j-c Per power transistor 3.2 °C/W , ±54 V ±57 V ±65 V Maximum supply voltage (6Q) ±28 V ±32 V ±36 V ±38 V ±44 V ±47 V ±50 V ±57 V , temperature, Tj, of each power transistor must not exceed 150°C. Pd x 0c - a + Pd/N x 0j - c + Ta < 150°C.(2) N: Number of power transistors 6c-a: Thermal resistance per power transistor However, the , hybrid ICs, N, is 4, and the thermal resistance per transistor is 3.2°C/W. Therefore, the required heat Toshiba
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Abstract: 2â'"SWITCHING TIMES, EACH TRANSISTOR ISN754 30 ONLY) Texas Instruments 53 INCORPORATED POST OFFICE , « A) I .«n I -430 '431 '432 CIRCUIT UNDER TEST (Sm NOTE B) INPUT '430 '431 '433 < ±4-4 H 50 , , Zout , testing SN75430, connect output Y to transistor base with a 500-i2 resistor from there to ground, and -
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STK402-070 STK407-000 stk407 stk407 710k SANYO STK407 070 stk407 070 stk407 090 stk*402-070 ENN7047 STK402-000 STK402-200 4189-SIP15
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