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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor A347

Catalog Datasheet MFG & Type PDF Document Tags

transistor a338

Abstract: transistor A347 +115°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above , '"33.8 â'"34.5 â'"35.0 â'"35.2 â'"34.9 â'"34.7 â'"34.6 â'"34.0 â'"34.7 S 22 Ang 36.5 16.3
Teledyne Cougar
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Abstract: Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , '"60.00 S 22 Ang Mag Ang 3.8 â'"6.3 â'"15.7 â'"20.6 â'"34.7 â'"53.4 â'"89.9 â'"131.8 â Teledyne Cougar
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agilent 9986

Abstract: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , '"60.00 S22 Ang Mag Ang 3.8 â'"6.3 â'"15.7 â'"20.6 â'"34.7 â'"53.4 â'"89.9 â'"131.8 â
Agilent Technologies
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Abstract: +125°C â'"62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , '"34.6 â'"34.6 â'"34.6 â'"34.8 â'"34.6 â'"34.6 â'"34.6 â'"34.7 34.7 â'"34.8 â'"34.9 â'"35.0 â Teledyne Cougar
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A1512

Abstract: transistor a1640 +150°C +100°C RFIN Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , '"22.1 â'"22.3 â'"22.5 â'"23.0 â'"23.6 â'"24.3 â'"25.0 â'"25.8 â'"26.9 â'"28.2 â'"29.9 â'"31.9 â'"34.7
Teledyne Cougar
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A14129

Abstract: A2706 Active Transistor Power Dissipation Junction Temperature Above Case Temperature 160°C/W 160 mW 26 , '"4.48 â'"4.85 â'"4.79 â'"3.47 â'".68 2.81 4.67 5.60 3.62 â'" â'" â'" â'" â'" â'" â'" â'" â
Agilent Technologies
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Abstract: DISCRETE SEMICONDUCTORS DAT M3D175 BLF404 UHF power MOS transistor Product , UHF power MOS transistor BLF404 PINNING - SOT409A FEATURES â'¢ High power gain PIN â , N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic , UHF power MOS transistor BLF404 LIMITING VALUES In accordance with the Absolute Maximum Rating , Product specification UHF power MOS transistor BLF404 CHARACTERISTICS Tj = 25 °C unless Philips Semiconductors
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MBB072 MBK150 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA75

A1489 TRANSISTOR

Abstract: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFR93A Marking: +R2 Plastic case (SOT 23) 1 = Collector, 2 = , '"27.1 â'"30.9 â'"34.7 â'"26.4 â'"26.5 â'"20.6 â'"16.0 â'"17.5 â'"21.2 â'"26.6 â'"30.5 â
Vishay Intertechnology
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A1489 TRANSISTOR BFR93AR BFR93AW 88/540/EEC 91/690/EEC D-74025
Abstract: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation â'¢ 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor , 0.345 0.352 0.351 0.358 0.359 0.352 0.353 0.402 0.486 S21 ANG. (deg.) â'18.8 â'34.7 â -
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PA862TD-T3 P15685EJ1V0DS00 P15685EJ1V0DS

PTFB193404F

Abstract: 1.20 â'"3.47 0.72 â'"1.94 1990 1.20 â'"3.41 0.72 â'"1.87 2020 1.19 â , .2KGTR-ND S1 Potentiometer Digi-Key 3224W-202ECT-ND S2 Transistor Digi-Key BCP56-ND, BCP56
Infineon Technologies
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PTFB193404F H-37275-6/2 P03-A
Abstract: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , 7.2 4.1 .9 â'"2.2 â'"5.5 â'"8.8 â'"12.4 â'"16.0 â'"19.6 â'"23.4 â'"26.8 â'"31.2 â'"34.7 â Renesas Electronics
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A1309

Abstract: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 13 581â'"2 94 9280 2 3 BFQ81 Marking: RA Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = , '"157.2 â'"177.0 167.2 157.9 149.4 137.2 127.1 119.9 â'"34.7 â'"84.6 â'"114.5 â'"146.3 â
Vishay Intertechnology
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A1309
Abstract: â'"2.01 1960 1.20 â'"3.47 0.72 â'"1.94 1990 1.20 â'"3.41 0.72 â , "¦ Potentiometer Transistor Voltage regulator Capacitor, 0.8 pF Capacitor, 100 µF Capacitor, 4.7 µF ATC Infineon Technologies
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H-37275

DP7119

Abstract: transistor A347 Small Surface Outline Package TDFN: Thin Dual Flat Non-Lead Package SOT-23: Small Outline Transistor , Flat Non-Lead Package Small Outline Transistor Single Chip Latch-Up CMOS , A-347 Specifications are subject to change without notice
Copal Electronics
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DP7119 transistor A347 dp7113 555IC DP721 DP7140

2sc9018

Abstract: 2sc9018 transistor 9.2â'"10 MHz ã''337 Band31 SW6 9.2â'"9.9 MHz ã''347 Band32 SW7 11.45â'"12.25 MHz , Q1 RF transistor, 2SC9018. R34 Resistor, 100 k, ±5% Venkel R41 Resistor, 120 kï , -31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead, 2.5 k/100 MHz Murata Q1 RF transistor , bead, 2.5 k/100 MHz Murata Q1 RF transistor, 2SC9018. ETC R34 Resistor, 100 k,  , Murata Q1 RF transistor, 2SC9018 ETC R34 Resistor, 100 k, ±5% Venkel R41
Silicon Laboratories
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AN602 2sc9018 transistor SL4X30MW100T
Abstract: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , '18.8 â'34.7 â'49.8 â'62.9 â'76.1 â'87.4 â'98.0 â'108.0 â'118.1 â'127.1 â'135.6 â Renesas Electronics
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PU10067EJ01V0DS
Abstract: '3.74 â'3.65 â'3.58 â'3.54 â'3.50 â'3.47 â'3.44 â'3.42 â'3.40 â'3.36 â'3.31 â'3.24 â , 47. 3â'Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters Analog Devices
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ADL5320 PKG-003480 09-12-2013-C ADL5320ARKZ-R7 ADL5320-EVALZ D05840-0-10/13
Abstract: '3.74 â'3.65 â'3.58 â'3.54 â'3.50 â'3.47 â'3.44 â'3.42 â'3.40 â'3.36 â'3.31 â'3.24 â , . 3â'Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters Analog Devices
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12-18-2008-B D05840-0-6/12
Abstract: TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , 0.848 0.806 0.772 0.745 0.722 0.705 â'7.6 â'14.5 â'20.2 â'24.7 â'28.4 â'31.6 â'34.7 Renesas Electronics
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Abstract: TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , 0.466 0.417 0.375 0.337 â'12.2 â'24.0 â'34.7 â'43.6 â'51.1 â'57.7 â'63.8 â'69.2 â Renesas Electronics
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PU10070EJ01V0DS
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