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LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor A1267

Catalog Datasheet MFG & Type PDF Document Tags

transistor A1267

Abstract: a1267 EC4H09C Ordering number : ENA1267 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H09C UHF to X Band Low-Noise Amplifier and OSC Applications Features · · , . A1267-1/3 EC4H09C Continued from preceding page. Parameter Symbol 2 S21e 1 2 S21e 2 NF , 1.0 2 3 5 Collector-to-Base Voltage, VCB - V 7 10 IT13899 No. A1267-2/3 , without notice. PS No. A1267-3/3 SANYO Electric
SANYO Electric
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transistor A1267 A1267 transistor a1267* transistor A-1267 A1267 data sheet a1267* transistor datasheet A1267-3/3

A1267

Abstract: EC4H09C Ordering number : ENA1267 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H09C UHF to X Band Low-Noise Amplifier and OSC Applications Features â , /network 80608AB TI IM TC-00001513 No. A1267-1/3 EC4H09C Continued from preceding page. Parameter , , VCB - V 7 10 IT13899 No. A1267-2/3 EC4H09C 2 ⏐S21e⏐ - IC 20 f T - IC 7 , without notice. PS No. A1267-3/3 SANYO Electric
SANYO Electric
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A1267 Y

Abstract: a1267 MCC TM Micro Commercial Components KTA1267-O KTA1267-Y KTA1267-GR #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth #7;#24;#6;#25;#15;#26;#15;#15; #27;#21;#5;#28; #29;#6;#30;#31;#15;#31; #6;!#16;#15;"##25;#26;#26; $ %#29;#6; #6; #6; #30;#31;#15;#31; #6;!#16;#15;"##25;#26;#25; Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 Marking: A1267 Epoxy meets UL 94 V , Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) Cob Collector Output Capacitance -(VCB=10Vdc, IE =0, f
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A1267 Y transistor a1267 gr

transistor A1267

Abstract: A1267 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267 KTA1267-O KTA1267-Y KTA1267-GR PNP General Purpose Application TO-92S Features · · · Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 x x Case Material: Molded Plastic. Classification Rating 94V-0 Marking: A1267 , Saturation Voltage -(IC=100mAdc, IB =10mAdc) fT Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) Cob
Micro Commercial Components
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a1267 gr ktc31 KTA1267GR KTA1267Y 10KOHM

A1267

Abstract: transistor A1267 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267-O KTA1267-Y KTA1267-GR PNP General Purpose Application TO-92S Features · · · · · Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 Marking: A1267 Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 , (IC=100mAdc, IB =10mAdc) fT Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) -Cob Collector Output
Micro Commercial Components
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a1267* transistor

Abstract: KTA1267GR .) Complementary to KTC3199 Marking: A1267 Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level , Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) -Cob Collector Output Capacitance (VCB=10Vdc, IE =0, f
Micro Commercial Components
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A1267

Abstract: transistor A1267 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267 Features · · · Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 x x Case Material: Molded Plastic. Classification Rating 94V-0 Marking: A1267 UL Flammability PNP General Purpose Application TO , =10mAdc) fT Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) Cob Collector Output Capacitance -(VCB
Micro Commercial Components
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KTA12

transistor A1267

Abstract: A1267 MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267-O KTA1267-Y KTA1267-GR PNP General Purpose Application TO-92S B Features · · · · · · · Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 Marking: A1267 Epoxy meets UL 94 V-0 flammability rating Moisture , ) fT Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) -Cob Collector Output Capacitance (VCB=10Vdc, IE
Micro Commercial Components
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10-kH

8 905 958 460

Abstract: , MHz Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above , '"47.8 â'"56.4 â'"85.0 â'"73.5 â'"81.9 â'"90.5 â'"99.3 â'"108.2 â'"117.3 â'"126.7 â'"136.1 â
Agilent Technologies
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8 905 958 460 2000MH 5963-2443E

A706 transistor

Abstract: +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , '"108.2 â'"117.3 â'"126.7 â'"136.1 â'"145.7 â'"155.4 â'"165.1 â'"174.9 175.3 165.4 155.6 55.0 â
Teledyne Cougar
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A706 transistor

A1943 transistor

Abstract: A1943 Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. â'¢ Typical Wâ'CDMA Performance: â'42 dBc ACPR, 3.55 GHz, 12 Volts , 44.91 0.030 â'12.27 0.609 168.87 1.70 0.903 156.46 2.317 43.49 0.030 â'12.67
Freescale Semiconductor
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A1943 transistor A1943
Abstract: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , '76.5 â'82.0 â'90.3 â'100.8 â'110.5 â'118.5 â'126.7 Data Sheet PU10103EJ01V0DS S22 5 Renesas Electronics
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A1668

Abstract: A1489 TRANSISTOR DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES â'¢ Low voltage operation, low phase distortion â'¢ Ideal for OSC applications â'¢ 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5677 50 pcs (Non reel) â'¢ 8 mm wide embossed taping 2SC5677 , 0.324 0.289 0.270 0.259 0.252 0.248 0.245 â'68.4 â'98.7 â'115.8 â'126.7 â'134.2 â
NEC
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A1668 A1489 TRANSISTOR Transistor a1244 A827 1307 2SC5677-T3 P15287EJ1V0DS0