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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor A114

Catalog Datasheet MFG & Type PDF Document Tags

transistor A114

Abstract: A114 transistor A114-119 A 89 - 91 A 92 B 38 - 40 Mounting parts for heatsin ks ^ Unsupported therm al conductive f ilm ^ Therm al conductive m aterial ^ Lock-in transistor fixing spring ^ E 42 - 43 E 12 E2-15 A 117
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transistor A114 A114 transistor TRANSISTOR A114 E transistor k 385 s2525 A114-119

D2641

Abstract: c4381 Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10 A1186.11 A1215.12 A1216.13 A1262.14 A1294 , .113 C4518/A.114 C4546 .115 C4557 .116
Sanken Electric
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D2641 c4381 C5239 b1686 c4517 C4131 A1295 A1303 A1386/A A1488/A A1492 A1493

39SF512

Abstract: 39vf020 nonvolatile memories is a floating gate memory transistor. Details of the memory cell operation are included , THBS. ESD Specs: SST uses both the human body model based on JEDEC Test Method A114, Electrostatic , Stress JEDEC A114 100 pF 1500 ohms 2000 V Electrostatic Discharge Machine Model JEDEC A115 , Electrostatic Discharge Human Body Model JEDEC A114 100 pF 1500 ohms 2000 V Electrostatic Discharge , Stress Method Results Electrostatic Discharge Human Body Model JEDEC A114 100 pF 1500 ohms
Silicon Storage Technology
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39SF512 39vf020 39SF010 37vf040 39VF512 39VF010 ISO-9001 Q30008 SF1-45A 39SF020/39SF010/39SF512 S72023-00-000 SF3-33A

CQY54A

Abstract: CQY54 ) -l2 195 275 390 ixA Output current (pin 3) 50 mA (LED driver transistor) "'3 â'" â'" Switch , = 67 kHz (note 8) «67 - 80 â'" dB ACI rejection (note 9) f= 114 kHz «114 - 90 â'" dB f = , J V 9. ACI (Adjacent Channel Interference) rejection at: vo(siqnal) (at 1 kHz> «114 =
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TEA5580 CQY54A CQY54
Abstract: PBSS301PZ 12 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 02 â'" 17 November 2009 Product , (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN , ‰¤ 0.02. [1] Unit - â'12 V - â'5.7 A - collector current Max - â'11.4 , ) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 , (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute NXP Semiconductors
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PBSS301NZ

2SA661

Abstract: RH-16 2sa661 ^jDypNPx^^^ibm^yv^iPCTTD^) ^SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) O O O Driver Stage and Amplifier Applications ° High Voltage Amplifier Applications ifiStfff-TT-t : VCE0 ^ -50V ^fg ^t ? # £ W : Pc = 600mW(Ta=25'C) SSC1166 i 7iJ ^ I) i tto Complementary to 3SC1166 MAXIMUM RATINGS (Ta=25"C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT w ? ? â  1 - VCBO -60 V ai/^i â'¢ ij , -as â'"114 â'"Q6 â'" 08 -1.0 â'"1.2 â'"1.4 -J-X .X-;^mns VBE (V) â'" 3 â'"5 â'"10 â'"3 0â'"5 0 â
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RH-16 2SA661 Produced by Perfect Crystal Device Technology IJI1HH-16
Abstract: T2G6003028-FL 30W, 28V DC â'" 6 GHz, GaN RF Power Transistor Applications â'¢ â'¢ â'¢ â'¢ â , notice www.triquint.com T2G6003028-FL 30W, 28V DC â'" 6 GHz, GaN RF Power Transistor Absolute , Transistor RF Characterization â'" Performance at 5.6 GHz (1, 2) Test conditions unless otherwise noted: TA , Transistor Thermal and Reliability Information Parameter Test Conditions Thermal Resistance (θJC , Transistor Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in TriQuint Semiconductor
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EAR99 T2G6003028-FLEVB1 T2G6003028-FLEVB2 T2G6003028 J-STD-020 JESD22-A114

tip 410 transistor

Abstract: transistor TIP 662 BU 105 NPN SILICON POWER TRANSISTOR DESIGNED FOR HIGH VOLTAGE C.R.T.SCANNING â'¢ Vces Rating 1500 V â'¢ Current Rating - 2.5 Amps Peak â'¢ Fast Switching - tp at 2 Amps 0.6 Microsecond Typical , data may be published at a later date. Texas Instruments 2-113 BU 105 NPN SILICON POWER TRANSISTOR , than 20 ns h-ts â'"I M k Current Waveforms of Iç and lg â 114 Texas Instruments BU 105 NPN SILICON POWER TRANSISTOR FORWARD BIASED SAFE AREA OF OPERATION, D.C. CASE TEMPE RATURE >90 °C
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tip 410 transistor transistor TIP 662 P6019 P6020 transistor BD 253 BU105

TRANSISTOR A107

Abstract: transistor A143 Transistor MRF6522-5R1 Nâ'"Channel Enhancementâ'"Mode Lateral MOSFET Designed for Class A and Class AB , ARCHIVED 2005 â'"114 S12 Ï |S11| 0.786 2 |S22| 0.711 â'"100 0.785 â , â'"83 0.550 0.841 â'"114 5.98 88 0.046 5 0.724 â'"85 0.575 0.838 , 59 0.035 â'"16 0.652 â'"114 0.900 0.803 â'"149 4.77 58 0.034 â , 0.808 â'"151 4.76 56 0.032 â'"17 0.647 â'"114 0.925 0.808 â'"152 4.62
Motorola
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TRANSISTOR A107 transistor A143 TRANSISTOR A117 Transistor A119 A124 transistor transistor a124 MRF6522
Abstract: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features â'¢ â'¢ â'¢ â'¢ â'¢ â , =2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking , www.fairchildsemi.com 1 2N7002K â'" N-Channel Enhancement Mode Field Effect Transistor January 2012 Symbol , 2 2N7002K â'" N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics , www.fairchildsemi.com 3 2N7002K â'" N-Channel Enhancement Mode Field Effect Transistor Typical Performance Fairchild Semiconductor
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transistor a114 esd

Abstract: TRANSISTOR A114 2N7002K - N-Channel Enhancement Mode Field Effect Transistor August 2009 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features · · · · · · · · Low On-Resistance Low Gate Threshold , Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per , Field Effect Transistor Electrical Characteristics Symbol BVDSS IDSS IGSS VGS(th) TA = 25 , Transistor Typical Performance Characteristics Figure 1. On-Region Characteristics 2.0 Figure 2
Fairchild Semiconductor
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transistor a114 esd

transistor A114

Abstract: A114 transistor 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features · · · · · · · · , ) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K , 2N7002K - N-Channel Enhancement Mode Field Effect Transistor March 2010 Symbol TA = 25°C unless , N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region , Mode Field Effect Transistor Typical Performance Characteristics 2N7002K - N-Channel
Fairchild Semiconductor
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A114 C101 2N7002K TRANSISTOR 2n7002k 7k transistor 2N7002K transistor C101

transistor A114

Abstract: a114 transistor 2N7002KW - N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features · · · · · · · · Low On-Resistance Low Gate Threshold , Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D , Rev. A0 1 www.fairchildsemi.com 2N7002KW - N-Channel Enhancement Mode Field Effect Transistor , 2N7002KW - N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics
Fairchild Semiconductor
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transistor A114

Abstract: 2n7002k 2N7002K - N-Channel Enhancement Mode Field Effect Transistor January 2012 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features · · · · · · · · Low On-Resistance Low Gate Threshold , Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per , Field Effect Transistor Electrical Characteristics Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON , www.fairchildsemi.com 2N7002K - N-Channel Enhancement Mode Field Effect Transistor Typical Performance
Fairchild Semiconductor
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transistor A114

Abstract: transistor a114 diagram Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD2000V includes Source plated , Class 1A (> 250V but < 500V) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22
Filtronic
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transistor a114 diagram transistor a115 S21/S12

transistor A143

Abstract: transistor A144 â'¢ THERMAL OVERLOAD PROTECTION â'¢ SHORT CIRCUIT PROTECTION â'¢ OUTPUT TRANSISTOR SOA PROTECTION , . Max.Unit Tj = 25° C â'"4.8 IO = 5mA to 1A PO £ 15W â'"4.75 â'"5 â'"5.25 â'"11.4 â'"12 â
Semelab
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transistor A144 LM7900

FPD1500

Abstract: transistor A114 FPD1500 Datasheet v3.0 1W POWER PHEMT LAYOUT: FEATURES: · · · · · 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 1500 µm Schottky barrier , Class 0 (0-0 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures
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FPD1500 SOT89 22-A114 MIL-STD-1686 MILHDBK-263

transistor a114 diagram

Abstract: transistor a115 Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes , Class 1A (> 250V but < 500V) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22
Filtronic
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A115

transistor A114

Abstract: A114 Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes , Class 1A (> 250V but < 500V) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22
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Transistor p1f

Abstract: MARKING P1F AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications , ) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model
Filtronic
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FPD4000AS FPD1000AS Transistor p1f MARKING P1F ON MARKING P1F marking code P1F P1F MARKING p1f on
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