NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| PUMF11 T/R | NXP Semiconductors | NPN resistor-equipped transistor; PNP general purpose transistor | 
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| PUMF12 T/R | NXP Semiconductors | PNP general purpose transistor; NPN resistor-equipped transistor |
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| TB100ML | NXP Semiconductors | TB100 - NPN power transistor |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: NPN SILICON SWITCHING TRANSISTOR BUV18X BUV18X · · · · High Current, Fast Switching, Low VCE(sat). , : sales@semelab-tt.com Document Number 9619 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com NPN SILICON SWITCHING TRANSISTOR BUV18X BUV18X ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR , Website: http://www.semelab-tt.com Document Number 9619 Issue 1 Page 2 of 3 NPN SILICON SWITCHING TRANSISTOR BUV18X BUV18X MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 ... | Original |
3 pages, |
M 9619 BUV18X BUV18X abstract |
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| Abstract: 1. h Silicon Transistor 2SD1001 2SD1001 o ir- Ta K y A o 2SB800 2SB800 t ? > / > 9 'J ito nms., MhFETt0 PT = 2.0 W (0.7 mm X 16 -y ^fàfëfflfë) Vceo>80 V, hFE =200 TYP. (Ic = 50 mA) (Ta = 25 °C) m s 5E fé W- iiL o u 9 9 • -< - x felli; EE VcBO 80 V u u ^ 9 - x Ì -y 9mn.ï± VcEO 80 V x ; .y ^ . _ x ^ ^ U Vebo 5.0 V 3 ^ ? 9 M. (Ê Sit) IC(DC) 300 mA ? V 9 9 %ÌH Ic(pulse) * 500 mA £ II ^c PT * 2.0 W 9 Ì , ) m m (03)3798- -9619 -f >7* ^->a>-tz>$- + SB Pi r m a m * SB 5u tt #7 SB T460 (tôT^Ht"^) ÎÎ M (052 ... | OCR Scan |
4 pages, |
transistor sit 2SB800 2SD100 2SD1001 JT MARKING SOT-89 FJ TC-5476A -5476A M 9619 ic 4541 t460 transistor C947 T460 2SD1001 abstract |
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| Abstract: 7s-h _ h^ >> x ^ Compound Transistor AN1A4M S$fcrt MPN P x fc: ^ * ^ y 3 V h ^ > ^ # it o7 xigft£L X ^ £"To (Ri = lO kQ, R2 = 10 kQ) xM i £ t& # fi =» w 9 9 • VcBO -60 V VcEO -50 V VEBO -10 V 3 V 7 i'tiid *£) Ic(uc) -100 mA 3 ^ 7 9 IS. ifiC'^ux) T * J-C(pule) -200 mA £ fit * Pr 250 raW ^ y 7 y s T, 150 f£ Ti £ Tstg - 55- 4-150 ♦ PWS10 PWS10 ins, Duty Cycle^50 % ^HK^ji : mm) 1. , (03)3798 -9619 4> SB 15 5? S ® SB T460 «ÍMftí+IEig-Ti^Sl (NEC^Sßt'JU) íSI (052)222- -2125 FAX(044 ... | OCR Scan |
4 pages, |
TT 2190 MA 7824 PA33 T210 T540 tll 111 transistor L 945 transistor t 2190 sol 4011 be AAIA4M t460 transistor TT 2170 TRANSISTOR TT 2190 T460 datasheet abstract |
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| Abstract: V =1 > \>=7>ì>7.5 Silicon Transistor 2SD1614 2SD1614 NPNi t9 i&mi&wtimmm ft Wl O iâW'icIII» , -9619 ¥311* 4= SB 1 ÍÍS iff * SB 5t S m SB T460 «ÏBTtl+K3êraTS14S («iT+B t'JU) «s S (052)242- -2762 FAX ... | OCR Scan |
5 pages, |
NEC 7900 c947 2SD1614 2SB1114 Nec b 616 TS14S transistor NEC K 946 transistor XM SOT-89 2SD1614 abstract |
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| Abstract: c954 1444H 7sS ' is- h Junction Field Effect Transistor 2SK660 2SK660 ECMx yfl|=1 200/iS @VDS=5 V, ID =0 C,ss = 4.5 pF @ VDS =5 V, VGS = 0, f = 1 MHz ft (Ta = 25 °C) « g S fë * tì K M > • y-xiBt' VDSX* 20 V r- ^ • KM VcDO -20 V K ^ 4 > t fà Id 10 mA r - h % m Ig 10 mA £ m * PT 100 mW if r > 9 -> s > HR Tj 125 'C , )548- 7914 IBtB ff s a » « a X106-01 X106-01 (NEC^tttA) M m ... | OCR Scan |
5 pages, |
tt 46 n 1200 2SK66 transistor 9619 sol 4011 be HT 1200-4 IEI-635 lc 945 transistor TT 2170 M 9619 m lc 945 MT 6225 2SK660 CI 4011 2SK660I 2SK660 abstract |
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| Abstract: Compound Transistor CE2F3P UUm^b • x. ; -y , (NEC*ttt*^) Hi « (03)3798- -9619 ¥ « # 8£ 41 n! Ì ^ S 85 * ffi m ti « ffi T460 «T&gftl^EIS-Tan» 1 % ... | OCR Scan |
5 pages, |
T540 ifr 044 t460 transistor T210 M 9619 T460 datasheet abstract |
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| Abstract: features Excelics' unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL , 7.57 -6.22 -21.19 -37.73 -56.07 -75.72 -96.19 -117.08 -137.38 -155.44 -171.45 page 2 of 4 ... | Original |
4 pages, |
Ym 3812 transistor 9619 EIC7785-4 EIC7785-4 abstract |
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| Abstract: NEC Silicon Power Transistor 2SA1 744 PNP x t»; - > jLmm 2SA1744 2SA1744 li, m&XJ -ym t hv> KM® (TO: mm) ISOLATED T0-220 T0-220(MP-45F MP-45F) ^ÊÎÎfi^^fê (Ta = 25 °C) m g «S- ir 5E fë * iï 3 u 9 9 • x ptu m EE VcBO -100 V 3 V9 9 • x S y9mn.1± VcEO -60 V ST. 1,9- - , 7# 1 % (nec*tte>) * « (03)3798- -9619 * m » ss + sb ffi tc lí ifi ^ sb m s w sb T460 «SgTft4 ... | OCR Scan |
6 pages, |
TT 2170 KL 3383 KM-tl17 2SA1744 T460 T540 M 9619 tl 7824 of IC 7824 M 9619 pnp datasheet abstract |
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| Abstract: T^-• h \IFf~ A MOSff^f^m h > ^f MOS Field Effect Transistor 2SK2109 2SK2109 Nft?^ MOS FET 2SK2109 2SK2109&N31 * *;U«ÉMOS FETT& U , 5 ¡tfèiEfiuFnJfé fcX < -y ^ >^liTto # IR o * ^ RDS(on) = 1.0 ß MAX. @Vas = 4.0 V, Id = 0.3 A V ? > TM&ifïÊ^ ton + toff < 100 ns mm moL : mm) 4.5 ±0.1 MUR K . M A K v-T; 2. Kuf > 3.'ir- h : NS (Ta = 25 °C ) m s m ^ £ # 3È tè m & Vdss Vgs = 0 60 V y- h - , §E t 108-01 (NEC*ti fcf^) M S (03)3798- -9619 ft: S5 li Ä 5S fi i® * SE a SE T460 mT* B t'JU) «SI ... | OCR Scan |
6 pages, |
transistor 9619 nec 7824 ki 30 if 2SK2109 100 N31 transistor mur 641 jft 1411 datasheet abstract |
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| Abstract: IJ =1 V h =7 > i> 7. ? Silicon Transistor 2SC3618 2SC3618 NPNXt?^ + ->7;i/i*> U =1 > h =7 7. 9 ^i&itl'i'Iffl 2SC3618I 2SC3618IÌ, W y"]i -/ YlCm'hB^'V h 7 > ^ x ? T", K 7 y'iz T-1"o ® o liFE^'ë bib hFE = 800~3200 (Ta = 25 °C) m s 7E fé # i'ÌL 3 -^-xP^'igEE vcbo 25 V vceo 25 V Ì Ì -y • ^-xprueff. vebo 15 V Ic(do 0.7 A ^ v- 9 ? (^vixX) T * C(puI se) 1.0 A £ tin & "t 2.0 W Ì? ^ > 9 •> 3 y fi. US. Ti 150 °C ffi ft & , í s m s X108-01 X108-01 (NECitte'JI-) s (03)3798- -9619 ¥»ft -f >7i ¥ä»ftSS + 56 SS m s iff SE x460 ... | OCR Scan |
5 pages, |
BU x460 2SC3618 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 1 1 0 /catalog/appnotes/15106.html Applicationnotes for Bipolar power transistors Title Date AN98079 AN98079 AN98079 AN98079 1.pdf: GTV4000 GTV4000 GTV4000 GTV4000 2Fh TV receiver with TDA9321H TDA9321H TDA9321H TDA9321H and TDA933xH 1998-08-19 AN10280 AN10280 AN10280 AN10280 1.pdf: 17 inch 70 kHz CRT monitor 2 1 0 /catalog/appnotes/15107.html Applicationnotes for Lighting Title Date an buJ100.pdf: Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Compact Low Vf MEGA Schottky diode / transistor mod Title Date AN10117 AN10117 AN10117 AN10117 1.pdf: Medium Power Transistors and www.datasheetarchive.com/files/philips/search/docindex-v1.txt |
Philips | 16/06/2005 | 2589.32 Kb | TXT | docindex-v1.txt |
| No abstract text available www.datasheetarchive.com/download/4195112-145405ZC/bfs17s.zip (SM2V020M.S2P) |
Infineon | 08/09/2000 | 311.54 Kb | ZIP | bfs17s.zip |
| ! SIEMENS Small Signal Semiconductors ! BFS17S BFS17S BFS17S BFS17S ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 2 V IC = 20 mA ! Common Emitter S-Parameters: February 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.5357 -16.3 36.065 170.8 0.0035 82.4 101.4 0.0299 54.4 0.4339 -30.1 0.250 0.4925 -153.0 9.619 96.6 0.0340 56.4 0.4045 -28.7 www.datasheetarchive.com/files/infineon/ehdata/spar/bfs17s/sm2v020m.s2p |
Infineon | 06/09/1997 | 2.38 Kb | S2P | sm2v020m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFS483 BFS483 BFS483 BFS483 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 3.5 V IC = 3 mA ! Common Emitter S-Parameters: October 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8985 -2.3 9.644 178.7 0.0024 87.0 9.619 175.7 0.0072 86.0 0.9885 -2.9 0.050 0.8903 -11.2 9.642 172.6 0.0120 84.6 0.9847 www.datasheetarchive.com/files/infineon/ehdata/spar/bfs483/s53v53m0.s2p |
Infineon | 18/11/1997 | 3.22 Kb | S2P | s53v53m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFS483 BFS483 BFS483 BFS483 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 0.75 V IC = 3 mA ! Common Emitter S-Parameters: October 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8877 -2.8 9.659 178.6 0.0034 87.4 0.9925 -1.3 0.020 0.8820 -5.5 9.619 176.5 0.0071 86.9 0.9852 -2.7 0.030 0.8835 -8.3 www.datasheetarchive.com/files/infineon/ehdata/spar/bfs483/s5v753m0.s2p |
Infineon | 24/04/1996 | 3.04 Kb | S2P | s5v753m0.s2p |
| ! SIEMENS Discrete & RF Semiconductors ! BFY280 BFY280 BFY280 BFY280 ! Si NPN RF Bipolar Junction Transistor in MICRO-X ! VCE = 4 V IC = 10 mA ! Common Emitter S-Parameters: May 1997 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7306 -2.2 17.603 177.9 0.0011 87.5 0.5023 -102.9 9.619 112.7 0.0411 51.2 0.6696 -30.4 0.700 0.4786 -112.3 8.600 107.8 0.0440 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy280/xb4v010m.s2p |
Infineon | 16/05/1997 | 2.78 Kb | S2P | xb4v010m.s2p |
| No abstract text available www.datasheetarchive.com/download/27102781-145364ZC/bfp280w.zip (X210V4M0.S2P) |
Infineon | 08/09/2000 | 425.57 Kb | ZIP | bfp280w.zip |
| ! SIEMENS Small Signal Semiconductors ! BFP280W BFP280W BFP280W BFP280W ! Si NPN RF Bipolar Junction Transistor in SOT343 ! VCE = 10 V IC = 4 mA ! Common Emitter S-Parameters: August 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8939 -1.2 10.700 176.4 0.0010 78.8 0.300 0.8122 -36.2 9.619 150.2 0.0372 69.1 0.9180 -18.1 0.400 0.7647 -46.7 9.043 142.4 www.datasheetarchive.com/files/infineon/ehdata/spar/bfp280w/x210v4m0.s2p |
Infineon | 19/08/1996 | 2.78 Kb | S2P | x210v4m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 BFY405 BFY405 BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 4 V IC = 10 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7212 -0.4 21.228 178.2 0.0003 53.9 1.700 0.3658 -87.5 10.047 99.3 0.0287 62.6 0.7402 -30.8 1.800 0.3488 -90.6 9.619 96.6 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay4v010m.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay4v010m.s2p |
| No abstract text available www.datasheetarchive.com/download/25107539-145410ZC/bfs483.zip (S53V53M0.S2P) |
Infineon | 08/09/2000 | 251.81 Kb | ZIP | bfs483.zip |