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LM96194CISQ/NOPB Texas Instruments TruTherm™ Hardware Monitor with PI Fan Control for Workstation Management 48-WQFN -40 to 100
LM96194CISQ Texas Instruments 9-CHANNEL POWER SUPPLY SUPPORT CKT, QCC48, LLP-48
LM96194CISQX Texas Instruments 9-CHANNEL POWER SUPPLY SUPPORT CKT, QCC48, LLP-48
LM96194CISQX/NOPB Texas Instruments TruTherm™ Hardware Monitor with PI Fan Control for Workstation Management 48-WQFN -40 to 100
V62/09619-01XE Texas Instruments Enhanced Product 1:3 LVPECL Clock Buffer With Programmable Divider 24-VQFN -55 to 125

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Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
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transistor 9619

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NPN SILICON SWITCHING TRANSISTOR BUV18X â'¢ High Current, Fast Switching, Low VCE(sat). â , : http://www.semelab-tt.com Document Number 9619 Issue 1 Page 1 of 3 NPN SILICON SWITCHING TRANSISTOR BUV18X ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters , Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9619 Issue 1 Page 2 of 3 NPN SILICON SWITCHING TRANSISTOR BUV18X MECHANICAL DATA Dimensions in mm (inches) 3 9 Semelab
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Abstract: NPN SILICON SWITCHING TRANSISTOR BUV18X · · · · High Current, Fast Switching, Low VCE(sat). , : sales@semelab-tt.com Document Number 9619 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com NPN SILICON SWITCHING TRANSISTOR BUV18X ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR , Website: http://www.semelab-tt.com Document Number 9619 Issue 1 Page 2 of 3 NPN SILICON SWITCHING TRANSISTOR BUV18X MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 Semelab
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M 9619 BUV18
Abstract: features Excelics' unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL , 7.57 -6.22 -21.19 -37.73 -56.07 -75.72 -96.19 -117.08 -137.38 -155.44 -171.45 page 2 of 4 Excelics Semiconductor
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EIC7785-4 1100Ma Ym 3812
Abstract: V =1 > \>=7>ì>7.5 Silicon Transistor 2SD1614 NPNi t9 i&mi&wtimmm ft Wl O iâWÅ'icIII» , ili * SB 15 9s S m SE T108 oí m«aiSKSETS7# m (NEC*tít*;u) ® (03)3798- -9619 Â¥311* 4= SB 1 ÃÃS -
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2SB1114 TS14S transistor NEC K 946 transistor XM SOT-89 t460 transistor Nec b 616 T460 PWS10 PWS350 TC-5811A
Abstract:  Compound Transistor CE2F3P UUm^b â'¢ x. ; -y , *^) Hi « (03)3798- -9619 Â¥ « # 8£ 41 n! Ì ^ S 85 * ffi m ti « ffi T460 «T&gftl^EIS-Tan» 1 % -
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T210 E0298 ifr 044 T540 D13110JJ1V0DS00 TC-6097
Abstract: 1. h Silicon Transistor 2SD1001 o irâ'" Ta K y A o 2SB800 t ? > / > 9 'J ito nms., MhFETt0 PT = 2.0 W (0.7 mm X 16 -y ^fàfëfflfë) Vceo>80 V, hFE =200 TYP. (Ic = 50 mA) (Ta = 25 °C) m s 5E fé W- iiL o u 9 9 â'¢ -< â'" x felli; EE VcBO 80 V u u ^ 9 â  x Ì -y 9mn.ï± VcEO 80 V x ; .y ^ . _ x ^ ^ U Vebo 5.0 V 3 ^ ? 9 M. (à Sit) IC(DC) 300 mA ? V 9 9 %ÌH Ic(pulse) * 500 mA , #1^- (NEC^ttt:^) m m (03)3798- -9619 -f >7* ^->a>-tz>$- + SB Pi r m a m * SB 5u tt #7 SB T460 (tôT^Ht"^) Ãà -
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TC-5476A C947 ic 4541 c947 transistor SOT-89 marking ek SOT-89 FJ
Abstract: 7sâ'"h _ h^ >> x ^ Compound Transistor AN1A4M S$fcrt MPN P x fc: ^ * ^ y 3 V h ^ > ^ # it o7 xigft£L X ^ £"To (Ri = lO kQ, R2 = 10 kQ) xM i £ t& # fi =» w 9 9 â'¢ VcBO -60 V VcEO -50 V VEBO -10 V 3 V 7 i'tiid *£) Ic(uc) -100 mA 3 ^ 7 9 IS. ifiC'^ux) T * J-C(pule) -200 mA £ fit * Pr 250 raW ^ y 7 y s T, 150 f£ Ti £ Tstg â'" 55â'" 4-150 ♦ PWS10 ins, Duty Cycle^50 % , -01 (NEC^ätfJU) S M (03)3798 -9619 4> SB 15 5? S ® SB T460 «ÃMftí+IEig-Ti^Sl (NEC^SÃt'JU) íSI (052)222 -
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TRANSISTOR TT 2190 transistor tt 2170 TT 2170 AAIA4M TT 2190 sol 4011 be SC-43B T108-01
Abstract: IJ =1 V h =7 > i> 7. ? Silicon Transistor 2SC3618 NPNXt?^ + ->7;i/i*> U =1 > h =7 7. 9 ^i&itl'i'Iffl 2SC3618IÌ, W y"]i -/ YlCm'hB^'V h 7 > ^ x ? T", K 7 y'iz T-1"o ® o liFE^'ë bib hFE = 800~3200 (Ta = 25 °C) m s 7E fé # i'ÌL 3 -^-xP^'igEE vcbo 25 V vceo 25 V Ì Ì -y â'¢ ^-xprueff. vebo 15 V Ic(do 0.7 A ^ v- 9 ? (^vixX) T * C(puI se) 1.0 A £ tin & "t 2.0 W Ì? ^ > 9 â'¢> 3 y fi. US. Ti 150 , X108-01 (NECitte'JI-) s (03)3798- -9619 ¥»ft -f >7i ¥ä»ftSS + 56 SS m s iff SE x460 «T+Bt'lH -
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BU x460 TC-5848A
Abstract: 7sS ' isâ'" h Junction Field Effect Transistor 2SK660 ECMx yfl|=1 200/iS @VDS=5 V, ID =0 C,ss = 4.5 pF @ VDS =5 V, VGS = 0, f = 1 MHz ft (Ta = 25 °C) « g S fë * tì K M > â'¢ y-xiBtÅ' VDSX* 20 V r- ^ â'¢ KM VcDO -20 V K ^ 4 > t fà Id 10 mA r - h % m Ig 10 mA £ m * PT 100 mW if r > 9 , » « a X106-01 (NEC^tttA) M m -
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TC-622S CI 4011 1444H MT 6225 m lc 945 c954 lc 945 transistor D10753JJ2VODSOQ TS484
Abstract:  NEC Silicon Power Transistor 2SA1 744 PNP x t»; â¡ > jLmm 2SA1744 li, m&XJ -ym t hv> KM® (TO: mm) ISOLATED T0-220(MP-45F) ^ÃÃÃfi^^fê (Ta = 25 °C) m g «S- ir 5E fë * iï 3 u 9 9 â'¢ x ptu m EE VcBO -100 V 3 V9 9 â'¢ x S y9mn.1± VcEO -60 V ST. 1,9- - , « (03)3798- -9619 * m » ss + sb ffi tc lí ifi ^ sb m s w sb T460 «SgTft4>KM-tl17#1 % (nec4"®e -
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M 9619 pnp of IC 7824 tl 7824 NEC TTE transistor 2sa1 KM-tl17 PWS300 D13160JJ1V0DS00 TD-7627 344-P 27-UU
Abstract: 'J zi > Silicon Transistor 2SA733 pnpiti =1 > h & it o2SC9451 n >v°ij y >9 u Tiimr-^ ttâ'ž o it ^ , ÃB?SESZTa7#1-§- (NEC^atMl-) ï « (03)3798- -9619 * m » is + SB IS m s Ã$Ï * SB m a s sb T460 Ã"ÃMfl3 + EîSI-Tg17 -
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NEC C959 c959 TEM-516 TRANSISTOR GF 507 2sc945-c transistor 2sa733 2SC9451 D10868JJ7VODSOO
Abstract: ^ â'¢ £ h MOS MW?HÛSZ'W- MOS Field Effect Power Transistor 2SJ138 MOS 2SJ138 Ii, P f -v ì-'ist&fó'tV- MOS FET T\ 5Vï£^IC > fötti^n rmn h mi x ^ s * - ?, y u / ^ K. 7 > reo iifHc ^-li V t o n » R[)Slon)â0.3 ü ^ v;, R,)S(on)ä0.45ü @V(:s 04 vsxjjjr-to - 10V, In - - 6.5 A - 4 V, I, = - 6.5 A o 4 > 7 7 9 > X il fi ¡1 ¿3 o T ÌK&Mìffr & L T'iMK"^ T"t c (Ta = , § F T S 484 #të ÃH M (044)548- 7914 T1O0-OI ÃNEC^tit JH « (03)3798- 9619 4-aii» -tr > ï â -
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nec 772 NEC J 302 fet 9411 NEC 7900 3A03U 7824 5A
Abstract: â'¢ S/â'" h mos MOS Field Effect Transistor 2SK680A Nft^ MOS FET 2SK680A (i, N^^/HIO^MOS FET T, 5 V^Ã^ICiOffi^ {dis Sill^ïli^x^ 7f> X ft«, # it OfétfyÃÃtjLfto Ros(on)=0.7 Q (MAX.) RDS(on)=1.0 Q (MAX.) o4 VHHItto *fe*Nft*5Ãtfr (Ta = 25 °C) VGS = 10 V, Id=0.5 A Vgs â'"4 V, Id = 0.5 A ftMm Wt : mm) 4.5 + 0.1 1.5 + 0.1 Il s Bg. -ïf- & ft 5e m KM >â'¢ v-xnoÅ" Vdss Vgs â'"0 30 , t108 01 (NEC^tít:^) (03)3798 -9619 -f>7* J3 >-tz>íí- Â¥ m te 15 m a m * sb 4> §B 15 m ÃS su -
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NEC IEI-620 NF 022 TC-7831A
Abstract:  T^â'"â'¢ h \IFf~ A MOSff^f^m h > ^f MOS Field Effect Transistor 2SK2109 Nft?^ MOS FET 2SK2109&N31 * *;U«ÉMOS FETT& U , 5 ¡tfèiEfiuFnJfé fcX < -y ^ >^liTto # IR o * ^ RDS(on) = 1.0 à MAX. @Vas = 4.0 V, Id = 0.3 A V ? > TM&ifïÃ^ ton + toff < 100 ns mm moL : mm) 4.5 ±0.1 MUR K . M A K v-T; 2. Kuf > 3.'irâ'" h : NS (Ta = 25 °C ) m s m ^ £ # 3à tè m & Vdss Vgs , *ti fcf^) M S (03)3798- -9619 ft: S5 li Ã" 5S fi i® * SE a SE T460 mT* B t'JU) «SI (052)242 -2762 -
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jft 1411 100 N31 transistor mur 641 35acr nec 7824 ki 30 if TC-7983A
Abstract: , fMAX = 12GHz at VCE = 4V). Minimum NPN transistor area is 8um x 20um. The process features two layers , Channel Stop Figure 1: SHPI (NPN Transistor) and CPI (NPN and PNP Transistor) Process Base , Figure 2: GST-1 Process (NPN Transistor) Self-Aligned Poly-Silicon Resistor Base ILD , Figure 3: GST-2 Process (NPN Transistor) PNP ILD Collector Base N+ P+ NPN Emitter , epi Metal System Channel Stop Figure 4: CB2 Process (PNP Transistor and NPN Transistor) 4 Maxim Integrated Products
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ST 9427 155-0241 155-0241-02 M726* TRANSISTOR st 9635 1550371
Abstract: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Creeâ'™s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier , and load pull data derived from the transistor. 1 Electrostatic Discharge (ESD) Classifications , 0.33 -92.58 1.0 GHz 0.91 -162.21 11.04 78.67 0.01 -0.41 0.34 -96.19 Cree
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CGHV40 CGHV40030-TB1
Abstract: Ordering number : ENN7322 2SC5782 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5782 UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions · · · · · Low noise : NF=1.3dB typ (f=2GHz). High cutoff frequency : fT=8.5GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). , -25.65 400 0.749 -64.64 9.619 132.37 0.081 57.01 0.746 -44.10 600 SANYO Electric
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IC 7458 IC AN 8224 13001 TRANSISTOR JAPAN 25.263 IC 4071 TA-100014
Abstract: Ordering number : ENN7322 2SC5782 NPN Epitaxial Planar Silicon Transistor 2SC5782 UHF to S Band Low-Noise Amplifier and OSC Applications · · · · · Package Dimensions Low noise : NF=1.3dB typ (f=2GHz). High cutoff frequency : fT=8.5GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). Ultraminiature and thin flat lead , -35.62 11.581 152.73 0.049 69.85 0.886 -25.65 400 0.749 -64.64 9.619 SANYO Electric
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transistor 8536 PT 9732 ic 4518 applications marking NJ
Abstract: Mosern mm MOS Field Effect Transistor 2SK2462 N^JVJiö- MOS FET 2SK2462ÃN5ljp?OUilM MOS FETT', X -f v ^ > ^'tt^'if tlT & ^ , ^flT7 ^ ^zl I - ^igKUlfê^ 04 villi vis. * > tm t o Rds (on) 1 = 0.14 Qft± (@Vgs = 10 V, Id= 8.0 A) Rds (on) 2 = 0.17 QM± (@Vgs= 4 V, Id=8.0A) Ciss=790pFiIÂ¥ Oir- hÌ7 hi Vgs (off) = 1.0 ~ 2.0 V Of - hffilï^'-f KÌrtlo O mm & «IS/'y ^ - V T T o WÃH (UM , - -7914 * m f$ is agSifiiSB s m ft « SB T108-01 t:siESK5ETS7Sl-§- (NECitít'JU) M ® (03)3798- -9619 -
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mgs 225 diode 344 BT diode lt 0236 10/4S SMHTS48
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF957T1 NPN Silicon Low Noise, High-Frequency Transistor D e s ig n e d fo r u s e in h ig h g a in , lo w n o is e s m a ll-s ig n a l a m p lifie rs . T h is tra n s is to r fe a tu re s e xce lle n t b roa d b an d lin e a rity and is o ffe re d in an ultra-sm all su rfa ce m o u n t p a cka g e su ita b le fo r au to m a te d assem bly. · · , 67.52 54.85 136.00 116.12 96.19 83.08 67.27 55.45 131.68 113.25 94.88 82.13 67.55 55.24 IS 12 I 0.035 -
OCR Scan
LA 7673 motorola 7673 A motorola 7673 b
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