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transistor 9619
Catalog Datasheet | MFG & Type | Document Tags | |
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transistor 9619Abstract: NPN SILICON SWITCHING TRANSISTOR BUV18X â'¢ High Current, Fast Switching, Low VCE(sat). â , : http://www.semelab-tt.com Document Number 9619 Issue 1 Page 1 of 3 NPN SILICON SWITCHING TRANSISTOR BUV18X ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters , Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9619 Issue 1 Page 2 of 3 NPN SILICON SWITCHING TRANSISTOR BUV18X MECHANICAL DATA Dimensions in mm (inches) 3 9 |
Semelab Original |
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transistor 9619 |
transistor 9619Abstract: M 9619 NPN SILICON SWITCHING TRANSISTOR BUV18X · · · · High Current, Fast Switching, Low VCE(sat). , : sales@semelab-tt.com Document Number 9619 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com NPN SILICON SWITCHING TRANSISTOR BUV18X ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR , Website: http://www.semelab-tt.com Document Number 9619 Issue 1 Page 2 of 3 NPN SILICON SWITCHING TRANSISTOR BUV18X MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 |
Semelab Original |
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M 9619 BUV18 |
transistor 9619Abstract: Ym 3812 features Excelics' unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL , 7.57 -6.22 -21.19 -37.73 -56.07 -75.72 -96.19 -117.08 -137.38 -155.44 -171.45 page 2 of 4 |
Excelics Semiconductor Original |
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EIC7785-4 Ym 3812 1100Ma |
transistor NEC K 946Abstract: transistor XM SOT-89 V =1 > \>=7>ì>7.5 Silicon Transistor 2SD1614 NPNi t9 i&mi&wtimmm ft Wl O iâWÅ'icIII» , ili * SB 15 9s S m SE T108 oà m«aiSKSETS7# m (NEC*tÃt*;u) ® (03)3798- -9619 Â¥311* 4= SB 1 ÃÃS |
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2SB1114 TS14S transistor NEC K 946 transistor XM SOT-89 t460 transistor Nec b 616 T460 PWS10 PWS350 TC-5811A |
T460Abstract: t460 transistor  Compound Transistor CE2F3P UUm^b â'¢ x. ; -y , *^) Hi « (03)3798- -9619 Â¥ « # 8£ 41 n! à ^ S 85 * ffi m ti « ffi T460 «T&gftl^EIS-Tan» 1 % |
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T210 ifr 044 T540 E0298 D13110JJ1V0DS00 TC-6097 |
T460Abstract: t460 transistor 1. h Silicon Transistor 2SD1001 o irâ'" Ta K y A o 2SB800 t ? > / > 9 'J ito nms., MhFETt0 PT = 2.0 W (0.7 mm X 16 -y ^fà fëfflfë) Vceo>80 V, hFE =200 TYP. (Ic = 50 mA) (Ta = 25 °C) m s 5E fé W- iiL o u 9 9 â'¢ -< â'" x felli; EE VcBO 80 V u u ^ 9 â x à -y 9mn.ï± VcEO 80 V x ; .y ^ . _ x ^ ^ U Vebo 5.0 V 3 ^ ? 9 M. (à Sit) IC(DC) 300 mA ? V 9 9 %ÃH Ic(pulse) * 500 mA , #1^- (NEC^ttt:^) m m (03)3798- -9619 -f >7* ^->a>-tz>$- + SB Pi r m a m * SB 5u tt #7 SB T460 (tôT^Ht"^) Ãà |
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TC-5476A C947 ic 4541 c947 transistor SOT-89 FJ 2SD100 |
TRANSISTOR TT 2190Abstract: transistor tt 2170 7sâ'"h _ h^ >> x ^ Compound Transistor AN1A4M S$fcrt MPN P x fc: ^ * ^ y 3 V h ^ > ^ # it o7 xigft£L X ^ £"To (Ri = lO kQ, R2 = 10 kQ) xM i £ t& # fi =» w 9 9 â'¢ VcBO -60 V VcEO -50 V VEBO -10 V 3 V 7 i'tiid *£) Ic(uc) -100 mA 3 ^ 7 9 IS. ifiC'^ux) T * J-C(pule) -200 mA £ fit * Pr 250 raW ^ y 7 y s T, 150 f£ Ti £ Tstg â'" 55â'" 4-150 ⦠PWS10 ins, Duty Cycle^50 % , -01 (NEC^ätfJU) S M (03)3798 -9619 4> SB 15 5? S ® SB T460 «ÃMftÃ+IEig-Ti^Sl (NEC^SÃt'JU) ÃSI (052)222 |
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TRANSISTOR TT 2190 transistor tt 2170 TT 2170 AAIA4M sol 4011 be TT 2190 SC-43B T108-01 |
transistor NEC K 946Abstract: C947 IJ =1 V h =7 > i> 7. ? Silicon Transistor 2SC3618 NPNXt?^ + ->7;i/i*> U =1 > h =7 7. 9 ^i&itl'i'Iffl 2SC3618IÃ, W y"]i -/ YlCm'hB^'V h 7 > ^ x ? T", K 7 y'iz T-1"o ® o liFE^'ë bib hFE = 800~3200 (Ta = 25 °C) m s 7E fé # i'ÃL 3 -^-xP^'igEE vcbo 25 V vceo 25 V à à -y â'¢ ^-xprueff. vebo 15 V Ic(do 0.7 A ^ v- 9 ? (^vixX) T * C(puI se) 1.0 A £ tin & "t 2.0 W Ã? ^ > 9 â'¢> 3 y fi. US. Ti 150 , X108-01 (NECitte'JI-) s (03)3798- -9619 ¥»ft -f >7i ¥ä»ftSS + 56 SS m s iff SE x460 «T+Bt'lH |
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BU x460 TC-5848A |
2SK660Abstract: CI 4011 7sS ' isâ'" h Junction Field Effect Transistor 2SK660 ECMx yfl|=1 200/iS @VDS=5 V, ID =0 C,ss = 4.5 pF @ VDS =5 V, VGS = 0, f = 1 MHz ft (Ta = 25 °C) « g S fë * tì K M > â'¢ y-xiBtÅ' VDSX* 20 V r- ^ â'¢ KM VcDO -20 V K ^ 4 > t fà Id 10 mA r - h % m Ig 10 mA £ m * PT 100 mW if r > 9 , » « a X106-01 (NEC^tttA) M m |
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TC-622S CI 4011 1444H m lc 945 MT 6225 c954 lc 945 transistor D10753JJ2VODSOQ TS484 |
M 9619 pnpAbstract: transistor 9619  NEC Silicon Power Transistor 2SA1 744 PNP x t»; â¡ > jLmm 2SA1744 li, m&XJ -ym t hv> KM® (TO: mm) ISOLATED T0-220(MP-45F) ^ÃÃÃfi^^fê (Ta = 25 °C) m g «S- ir 5E fë * iï 3 u 9 9 â'¢ x ptu m EE VcBO -100 V 3 V9 9 â'¢ x S y9mn.1± VcEO -60 V ST. 1,9- - , « (03)3798- -9619 * m » ss + sb ffi tc là ifi ^ sb m s w sb T460 «SgTft4>KM-tl17#1 % (nec4"®e |
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M 9619 pnp of IC 7824 tl 7824 NEC TTE IC 7824 ST transistor 2sa1 PWS300 D13160JJ1V0DS00 TD-7627 344-P 27-UU |
NEC C959Abstract: c959 'J zi > Silicon Transistor 2SA733 pnpiti =1 > h & it o2SC9451 n >v°ij y >9 u Tiimr-^ ttâ' o it ^ , ÃB?SESZTa7#1-§- (NEC^atMl-) ï « (03)3798- -9619 * m » is + SB IS m s Ã$à * SB m a s sb T460 Ã"ÃMfl3 + EîSI-Tg17 |
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NEC C959 c959 TEM-516 TRANSISTOR GF 507 2sc945-c transistor 2sa733 2SC9451 D10868JJ7VODSOO |
nec 772Abstract: 2SJ138 ^ â'¢ £ h MOS MW?HÃSZ'W- MOS Field Effect Power Transistor 2SJ138 MOS 2SJ138 Ii, P f -v ì-'ist&fó'tV- MOS FET T\ 5Vï£^IC > fötti^n rmn h mi x ^ s * - ?, y u / ^ K. 7 > reo iifHc ^-li V t o n » R[)Slon)â0.3 ü ^ v;, R,)S(on)ä0.45ü @V(:s 04 vsxjjjr-to - 10V, In - - 6.5 A - 4 V, I, = - 6.5 A o 4 > 7 7 9 > X il fi ¡1 ¿3 o T ÃK&Mìffr & L T'iMK"^ T"t c (Ta = , § F T S 484 #të ÃH M (044)548- 7914 T1O0-OI ÃNEC^tit JH « (03)3798- 9619 4-aii» -tr > ï â |
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nec 772 NEC J 302 fet 9411 NEC 7900 3A03U 7824 5A |
C947Abstract: NEC IEI-620 â'¢ S/â'" h mos MOS Field Effect Transistor 2SK680A Nft^ MOS FET 2SK680A (i, N^^/HIO^MOS FET T, 5 V^Ã^ICiOffi^ {dis Sill^ïli^x^ 7f> X ft«, # it OfétfyÃÃtjLfto Ros(on)=0.7 Q (MAX.) RDS(on)=1.0 Q (MAX.) o4 VHHItto *fe*Nft*5Ãtfr (Ta = 25 °C) VGS = 10 V, Id=0.5 A Vgs â'"4 V, Id = 0.5 A ftMm Wt : mm) 4.5 + 0.1 1.5 + 0.1 Il s Bg. -ïf- & ft 5e m KM >â'¢ v-xnoÅ" Vdss Vgs â'"0 30 , t108 01 (NEC^tÃt:^) (03)3798 -9619 -f>7* J3 >-tz>ÃÃ- Â¥ m te 15 m a m * sb 4> §B 15 m ÃS su |
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NEC IEI-620 NF 022 TC-7831A |
jft 1411Abstract: c947  T^â'"â'¢ h \IFf~ A MOSff^f^m h > ^f MOS Field Effect Transistor 2SK2109 Nft?^ MOS FET 2SK2109&N31 * *;U«ÃMOS FETT& U , 5 ¡tfèiEfiuFnJfé fcX < -y ^ >^liTto # IR o * ^ RDS(on) = 1.0 à MAX. @Vas = 4.0 V, Id = 0.3 A V ? > TM&ifïÃ^ ton + toff < 100 ns mm moL : mm) 4.5 ±0.1 MUR K . M A K v-T; 2. Kuf > 3.'irâ'" h : NS (Ta = 25 °C ) m s m ^ £ # 3à tè m & Vdss Vgs , *ti fcf^) M S (03)3798- -9619 ft: S5 li Ã" 5S fi i® * SE a SE T460 mT* B t'JU) «SI (052)242 -2762 |
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jft 1411 100 N31 transistor mur 641 35acr nec 7824 ki 30 if TC-7983A |
ST 9427Abstract: 155-0241 , fMAX = 12GHz at VCE = 4V). Minimum NPN transistor area is 8µm x 20µm. The process features two layers , Channel Stop Figure 1: SHPI (NPN Transistor) and CPI (NPN and PNP Transistor) Process Base , Figure 2: GST-1 Process (NPN Transistor) Self-Aligned Poly-Silicon Resistor Base ILD , Figure 3: GST-2 Process (NPN Transistor) PNP ILD Collector Base N+ P+ NPN Emitter , epi Metal System Channel Stop Figure 4: CB2 Process (PNP Transistor and NPN Transistor) 4 |
Maxim Integrated Products Original |
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ST 9427 155-0241 155-0241-02 M726* TRANSISTOR 1550371 st 9635 |
Abstract: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Creeâ's CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier , and load pull data derived from the transistor. 1 Electrostatic Discharge (ESD) Classifications , 0.33 -92.58 1.0 GHz 0.91 -162.21 11.04 78.67 0.01 -0.41 0.34 -96.19 |
Cree Original |
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CGHV40 CGHV40030-TB1 |
IC 7458Abstract: IC AN 8224 Ordering number : ENN7322 2SC5782 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5782 UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions · · · · · Low noise : NF=1.3dB typ (f=2GHz). High cutoff frequency : fT=8.5GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). , -25.65 400 0.749 -64.64 9.619 132.37 0.081 57.01 0.746 -44.10 600 |
SANYO Electric Original |
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IC 7458 IC AN 8224 IC 4071 13001 TRANSISTOR JAPAN TA-100014 25.263 |
transistor 8536Abstract: PT 9732 Ordering number : ENN7322 2SC5782 NPN Epitaxial Planar Silicon Transistor 2SC5782 UHF to S Band Low-Noise Amplifier and OSC Applications · · · · · Package Dimensions Low noise : NF=1.3dB typ (f=2GHz). High cutoff frequency : fT=8.5GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). Ultraminiature and thin flat lead , -35.62 11.581 152.73 0.049 69.85 0.886 -25.65 400 0.749 -64.64 9.619 |
SANYO Electric Original |
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transistor 8536 PT 9732 ic 4518 applications marking NJ |
mgs 225Abstract: 2SK2462 Mosern mm MOS Field Effect Transistor 2SK2462 N^JVJiö- MOS FET 2SK2462ÃN5ljp?OUilM MOS FETT', X -f v ^ > ^'tt^'if tlT & ^ , ^flT7 ^ ^zl I - ^igKUlfê^ 04 villi vis. * > tm t o Rds (on) 1 = 0.14 Qft± (@Vgs = 10 V, Id= 8.0 A) Rds (on) 2 = 0.17 QM± (@Vgs= 4 V, Id=8.0A) Ciss=790pFiIÂ¥ Oir- hÃ7 hi Vgs (off) = 1.0 ~ 2.0 V Of - hffilï^'-f KÃrtlo O mm & «IS/'y ^ - V T T o WÃH (UM , - -7914 * m f$ is agSifiiSB s m ft « SB T108-01 t:siESK5ETS7Sl-§- (NECitÃt'JU) M ® (03)3798- -9619 |
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mgs 225 diode 344 BT diode lt 0236 10/4S SMHTS48 |
motorola 7673 AAbstract: LA 7673 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF957T1 NPN Silicon Low Noise, High-Frequency Transistor D e s ig n e d fo r u s e in h ig h g a in , lo w n o is e s m a ll-s ig n a l a m p lifie rs . T h is tra n s is to r fe a tu re s e xce lle n t b roa d b an d lin e a rity and is o ffe re d in an ultra-sm all su rfa ce m o u n t p a cka g e su ita b le fo r au to m a te d assem bly. · · , 67.52 54.85 136.00 116.12 96.19 83.08 67.27 55.45 131.68 113.25 94.88 82.13 67.55 55.24 IS 12 I 0.035 |
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motorola 7673 A LA 7673 motorola 7673 b |
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