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NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 7sS ' is- h Junction Field Effect Transistor 2SK660 2SK660 ECMx yfl|=1 200/iS @VDS=5 V, ID =0 C,ss = 4.5 pF @ VDS =5 V, VGS = 0, f = 1 MHz ft (Ta = 25 °C) « g S fë * tì K M > • y-xiBt' VDSX* 20 V r- ^ • KM VcDO -20 V K ^ 4 > t fà Id 10 mA r - h % m Ig 10 mA £ m * PT 100 mW if r > 9 -> s > HR Tj 125 'C , )548- 7914 IBtB ff s a » « a X106-01 X106-01 (NEC^tttA) M m ... | OCR Scan |
4 pages, |
tt 46 n 1200 HT 1200-4 IEI-635 2SK66 sol 4011 be transistor 9619 lc 945 transistor TT 2170 2SK660 M 9619 MT 6225 m lc 945 CI 4011 2SK660 abstract |
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| Abstract: 1. h Silicon Transistor 2SD1001 2SD1001 o ir- Ta K y A o 2SB800 2SB800 t ? > / > 9 'J ito nms., MhFETt0 PT = 2.0 W (0.7 mm X 16 -y ^fàfëfflfë) Vceo>80 V, hFE =200 TYP. (Ic = 50 mA) (Ta = 25 °C) m s 5E fé W- iiL o u 9 9 • -< - x felli; EE VcBO 80 V u u ^ 9 - x Ì -y 9mn.ï± VcEO 80 V x ; .y ^ . _ x ^ ^ U Vebo 5.0 V 3 ^ ? 9 M. (Ê Sit) IC(DC) 300 mA ? V 9 9 %ÌH Ic(pulse) * 500 mA £ II ^c PT * 2.0 W 9 Ì , ) m m (03)3798- -9619 -f >7* ^->a>-tz>$- + SB Pi r m a m * SB 5u tt #7 SB T460 (tôT^Ht"^) ÎÎ M (052 ... | OCR Scan |
4 pages, |
transistor sit 2SD100 2SD1001 JT MARKING t460 transistor TC-5476A 2SB800 ic 4541 T460 C947 2SD1001 abstract |
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| Abstract: 7s-h _ h^ >> x ^ Compound Transistor AN1A4M S$fcrt MPN P x fc: ^ * ^ y 3 V h ^ > ^ # it o7 xigft£L X ^ £"To (Ri = lO kQ, R2 = 10 kQ) xM i £ t& # fi =» w 9 9 • VcBO -60 V VcEO -50 V VEBO -10 V 3 V 7 i'tiid *£) Ic(uc) -100 mA 3 ^ 7 9 IS. ifiC'^ux) T * J-C(pule) -200 mA £ fit * Pr 250 raW ^ y 7 y s T, 150 f£ Ti £ Tstg - 55- 4-150 ♦ PWS10 PWS10 ins, Duty Cycle^50 % ^HK^ji : mm) 1. , (03)3798 -9619 4> SB 15 5? S ® SB T460 «ÍMftí+IEig-Ti^Sl (NEC^Sßt'JU) íSI (052)222- -2125 FAX(044 ... | OCR Scan |
4 pages, |
MA 7824 PA33 T540 T210 AAIA4M sol 4011 be t460 transistor T460 TT 2170 TRANSISTOR TT 2190 transistor tt 2170 datasheet abstract |
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| Abstract: Compound Transistor CE2F3P UUm^b • x. ; -y , (NEC*ttt*^) Hi « (03)3798- -9619 ¥ « # 8£ 41 n! Ì ^ S 85 * ffi m ti « ffi T460 «T&gftl^EIS-Tan» 1 % ... | OCR Scan |
4 pages, |
T540 t460 transistor T210 ifr 044 M 9619 T460 datasheet abstract |
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| Abstract: features Excelics' unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL , 7.57 -6.22 -21.19 -37.73 -56.07 -75.72 -96.19 -117.08 -137.38 -155.44 -171.45 page 2 of 4 ... | Original |
4 pages, |
Ym 3812 EIC7785-4 EIC7785-4 abstract |
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| Abstract: V =1 > \>=7>ì>7.5 Silicon Transistor 2SD1614 2SD1614 NPNi t9 i&mi&wtimmm ft Wl O iâW'icIII» , -9619 ¥311* 4= SB 1 ÍÍS iff * SB 5t S m SB T460 «ÏBTtl+K3êraTS14S («iT+B t'JU) «s S (052)242- -2762 FAX ... | OCR Scan |
4 pages, |
c947 2SD1614 2SB1114 Nec b 616 TS14S transistor XM SOT-89 2SD1614 abstract |
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| Abstract: T^-• h \IFf~ A MOSff^f^m h > ^f MOS Field Effect Transistor 2SK2109 2SK2109 Nft?^ MOS FET 2SK2109 2SK2109&N31 * *;U«ÉMOS FETT& U , 5 ¡tfèiEfiuFnJfé fcX < -y ^ >^liTto # IR o * ^ RDS(on) = 1.0 ß MAX. @Vas = 4.0 V, Id = 0.3 A V ? > TM&ifïÊ^ ton + toff < 100 ns mm moL : mm) 4.5 ±0.1 MUR K . M A K v-T; 2. Kuf > 3.'ir- h : NS (Ta = 25 °C ) m s m ^ £ # 3È tè m & Vdss Vgs = 0 60 V y- h - , §E t 108-01 (NEC*ti fcf^) M S (03)3798- -9619 ft: S5 li Ä 5S fi i® * SE a SE T460 mT* B t'JU) «SI ... | OCR Scan |
6 pages, |
2SK2109 2SK2109 abstract |
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| Abstract: x-5> • 2/-h MOS Field Effect Transistor 2SK2541 2SK2541 N^-VT^umos FET 2SK2541I 2SK2541IÌ1.5 Viglili-f ^WN^1 + ^^iÉïïÎMOS FETT'&U, fSB'T'IlïRlT'S, fro K7-f7tS?flt s >&m if & u s -ti A, o rt m h 7 > v x $ iz ft t> s x -r ^ > 1 L T , -r > * 71 - * 0 Ï& £ ® s # « o *f- h «1.5 (miÉ : mm) IHÌ0I& 4.0+0.2 1 '2' 3 2.0+0.2 -0.50 -0.45 3° 1.271.27 30 -Uy-!- ih- JS 90.42 FM >(D) K $f-f K 1. V-*(S) 2. KU-r , a« 56 ÍÍ S ^ SB s 56 a m SB T108 01 SsIiK5ïïl7#1§ (NEC^tít:Jl>) s « (03)3798- -9619 + SB 15 56«« ... | OCR Scan |
6 pages, |
TI 945 nec 501 t 2SK2541 c954 DIODE IN 4002 424 2SK2541I 2SK2541 abstract |
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| Abstract: "t-S • h Compound Field Effect Power Transistor juPAl 526 NT-V^JW^-MOS FETT'W T.mm 26.8 MAX. /¿PA1526 PA1526Ü, Nf-^wuf»^-MOS FETT", 5 VH^ICc?) Wì mm) m fi IZ j: a ifé!»* x T-to * y^tt & isar V^ tz¿ò, ì - y, y «ft $ on x -y y ( VGS -4 V) T , m (044)548 -8882 àmti W^SB m m tè m se t 108-01 (NEC^tít:^) M a (03)3798 -9619 j >71 ->a>-fc>íí - ... | OCR Scan |
6 pages, |
NEC C 324 C C9411 PA1526H NEC TRANSISTOR 8882 gm 2211 PA1526 PA1526 abstract |
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| Abstract: ^ • £ h MOS MW?HÛSZ'W- MOS Field Effect Power Transistor 2SJ138 2SJ138 MOS 2SJ138 2SJ138 Ii, P f -v ì-'ist&fó'tV- MOS FET T\ 5Vï£^IC > fötti^n rmn h mi x ^ s * - ?, y u / ^ K. 7 > reo iifHc ^-li V t o n » R[)Slon)â0.3 ü ^ v;, R,)S(on)ä0.45ü @V(:s 04 vsxjjjr-to - 10V, In - - 6.5 A - 4 V, I, = - 6.5 A o 4 > 7 7 9 > X il fi ¡1 ¿3 o T ÌK&Mìffr & L T'iMK"^ T"t c (Ta = 25 °C) KWm (i|ifô ! mm , ÍH M (044)548- 7914 T1O0-OI ÍNEC^tit JH « (03)3798- 9619 4-aii» -tr > ï - SB IS * » ^ Sß T460 ... | OCR Scan |
8 pages, |
NEC J 302 C9411 7824 5A nec 772 2SJ138 2SJ138 abstract |
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| 1 1 0 /catalog/appnotes/15106.html Applicationnotes for Bipolar power transistors Title Date AN : Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Philips BUJ100 BUJ100 BUJ100 BUJ100 transistor in TO-92 suits all Compact monitor 4 1 0 /catalog/appnotes/15490.html Applicationnotes for RF small signal field effect transistors Applicationnotes for N channel junction field effect transistors Title Date AN00065 AN00065 AN00065 AN00065 1.pdf: REF8116 REF8116 REF8116 REF8116 CCD VGA USB transistors Title Date 1890MHZ 1890MHZ 1890MHZ 1890MHZ.pdf: 1890MHz low power down converter with 110MHz IF 1P9GHZLC.pdf: Low noise www.datasheetarchive.com/files/philips/search/docindex-v1.txt |
Philips | 16/06/2005 | 2589.32 Kb | TXT | docindex-v1.txt |
| ! INFINEON TECHNOLOGIES Small Signal Semiconductors ! BFR360F BFR360F BFR360F BFR360F , Si-NPN RF-Transistor T571A T571A T571A T571A in TSFP3 ! Vce=2 V, Ic=1.2 mA ! Common Emitter S-Parameters: 29. May 2001 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz Mag Ang Mag .179 177.1 0.0096 90.9 0.9960 -2.2 0.100 0.9619 -7.1 4.166 174.9 0.0202 86.0 0.9953 -4.4 0.150 0.9619 -11.6 4.168 171.5 0.0302 82.5 0.9906 -6.6 0.200 0.9579 -15.1 4 www.datasheetarchive.com/download/1132775-777365ZC/spice_s-param_bfr360f.zip (F42V01M2.S2P) |
Spice Models | 29/07/2012 | 244.48 Kb | ZIP | spice_s-param_bfr360f.zip |
| # GHz S MA R 50 ! 6 Nov 1989 / 09:22:36 !BF599 BF599 BF599 BF599, Si-NPN RF-Transistor in SOT23 ! VCE=10V IC=10mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .001 .69945 -3.0 20.1953 177.8 .00019 97.3 .99616 -0.0 .002 .69906 -6.4 20.1521 176 .2 12.9619 125.7 .00544 53.1 .94377 -3.9 .050 .63930 -108.7 11.2424 118.5 .00610 50 www.datasheetarchive.com/files/siemens/ehdata/spar/bf599/ru10v10m.s2p |
Siemens | 04/07/1992 | 1.86 Kb | S2P | ru10v10m.s2p |
| ! Infineon Technologies Discrete & RF Semiconductors ! BF770A BF770A BF770A BF770A ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 4 V IC = 12 mA ! Common Emitter S-Parameters: October 1995 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7120 -8.2 29.175 173.8 0.0038 85.4 0.9752 -4.5 0.020 0.6982 -16.1 28.730 168.1 0.0076 81.8 0.9619 -8.7 0.050 0 www.datasheetarchive.com/download/26775098-777289ZC/bf770a.zip (G24V012M.S2P) |
Spice Models | 29/07/2012 | 238.93 Kb | ZIP | bf770a.zip |
| ! SIEMENS Small Signal Semiconductors ! BFS17S BFS17S BFS17S BFS17S ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 8 V IC = 1.2 mA ! Common Emitter S-Parameters: February 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9621 -2.2 4.121 177.9 0.0029 88.5 0.9985 -0.7 0.020 0.9619 -4.6 4.289 176.5 0.0062 87.4 0.9984 -1.3 0.050 0.9576 -11.4 4 www.datasheetarchive.com/download/19898564-777356ZC/bfs17s.zip (SM8V01M2.S2P) |
Spice Models | 29/07/2012 | 311.83 Kb | ZIP | bfs17s.zip |
| ! SIEMENS Small Signal Semiconductors ! BFR93A BFR93A BFR93A BFR93A ! Si NPN RF Bipolar Junction Transistor in SOT23 ! VCE = 4 V IC = 12 mA ! Common Emitter S-Parameters: October 1995 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7120 -8.2 29.175 173.8 0.0038 85.4 0.9752 -4.5 0.020 0.6982 -16.1 28.730 168.1 0.0076 81.8 0.9619 -8.7 0.050 0.6528 -39.4 26 www.datasheetarchive.com/download/67988264-777351ZC/bfr93a.zip (RL4V012M.S2P) |
Spice Models | 29/07/2012 | 237.37 Kb | ZIP | bfr93a.zip |
| ! SIEMENS Small Signal Semiconductors ! BFS17S BFS17S BFS17S BFS17S ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 2 V IC = 20 mA ! Common Emitter S-Parameters: February 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.5357 -16.3 36.065 170.8 0.0035 82.4 0 .777 101.4 0.0299 54.4 0.4339 -30.1 0.250 0.4925 -153.0 9.619 96.6 0.0340 56.4 0.4045 -28 www.datasheetarchive.com/download/19898564-777356ZC/bfs17s.zip (SM2V020M.S2P) |
Spice Models | 29/07/2012 | 311.83 Kb | ZIP | bfs17s.zip |
| ! SIEMENS Small Signal Semiconductors ! BFS480 BFS480 BFS480 BFS480 ! Si NPN RF Bipolar Junction Transistor in SOT363 ! VCE = 8 V IC = 1 mA ! Common Emitter S-Parameters: August 1994 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .6 0.030 0.9627 -1.9 3.353 177.8 0.0043 87.1 0.9962 -0.9 0.035 0.9619 -2.2 3.420 177 .045 0.9624 -2.8 3.354 177.0 0.0063 87.2 0.9960 -1.3 0.050 0.9619 -3.0 3.321 176.8 0 www.datasheetarchive.com/files/siemens/ehdata/spar/bfs480/s28v01m0.s2p |
Siemens | 10/08/1994 | 3.2 Kb | S2P | s28v01m0.s2p |
| # GHz S MA R 50 ! 6 Jul 1992 / 13:47:09 !BFE183 BFE183 BFE183 BFE183, Si-NPN RF-Transistor in SOT143 [8V010me5] ! VCE= 8.00V, IC= 10.00mA !f GHZ S11 S21 S12 S22 ! MAG ANG MAG ANG MAG ANG MAG ANG .100 .71096 -40.4 22.0294 152.7 .01925 71.3 .89678 -18.0 .150 .65912 -57.7 19 .3 2.9619 64.9 .11689 64.0 .34740 -46.9 2.000 .45133 160.7 2.6825 60.6 .12820 64 www.datasheetarchive.com/files/siemens/ehdata/spar/bfe183/e58v010m.s2p |
Siemens | 18/09/1992 | 2.6 Kb | S2P | e58v010m.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFR280W BFR280W BFR280W BFR280W ! Si NPN RF Bipolar Junction Transistor in SOT323 ! VCE = 2 V IC = 1 mA ! Common Emitter S-Parameters: September 1992 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.9619 -6.9 3.331 173.5 0.0185 85.1 0.9947 -3.8 0.150 0.9575 -10.3 3.322 170.0 0.0281 83.0 0.9905 -5.8 0.200 0.9490 -13.6 3 www.datasheetarchive.com/files/siemens/ehdata/spar/bfr280w/w22v01m0-v1.s2p |
Siemens | 10/08/1994 | 2.22 Kb | S2P | w22v01m0-v1.s2p |