NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (06 21) 7 76-0 · USA (330) 4 25 35 55 · Singapore 7 79 90 91 · Internet http://www.pepperl-fuchs.com , , adjustable K PNP and NPN transistor outputs K Clearly visible LEDs for Power ON, switching state and , Pepperl+Fuchs, Printed in Germany Pepperl+Fuchs Group · Tel.: Germany (06 21) 7 76-0 · USA (330) 4 25 35 55 · Singapore 7 79 90 91 · Internet http://www.pepperl-fuchs.com Detection range Detection range min. , Pepperl+Fuchs, Printed in Germany Pepperl+Fuchs Group · Tel.: Germany (06 21) 7 76-0 · USA (330) 4 25 35 55 · ... | Original |
4 pages, |
RL28-8-H-2000-IR/47/105 RL28-8-H-2000-IR/105/110 datasheet infrared white black sensor infrared transmission distance sensor transistor 91 330 RL28-8-H-2000-IR/49/105 RL28-8-H-2000-IR/105/ RL28-8-H-2000-IR/105/ abstract |
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| Abstract: 470 91 270 30.1 470 180 30.1 330 30.1 30.1 The characteristics using the , [uH] 20 L=330 [uH] 10 L=470 [uH] 0 360 91 ROCL [k] Figure 15. Current consumption ROCL (ROCE = 24k) 40 80 L=330 [uH] 60 L=470 [uH] 40 20 91 180 Brightness[cd , L=220 [uH] 100 L=330 [uH] 80 60 L=470 [uH] 40 20 91 180 360 ROCL [k , ] 30 20 10 0 L=220 [uH] L=330 [uH] L=470 [uH] 91 180 360 ROCL [k] Figure 17. ... | Original |
19 pages, |
SM8143A SM8143 1SS370 ldr 10k toko 10k coil transistor 91 330 SM8143 abstract |
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| Abstract: ] 20 L=330 [uH] 10 L=470 [uH] 0 360 91 ROCL [k] Figure 15. Current consumption ROCL (ROCE = 24k) 40 80 L=330 [uH] 60 L=470 [uH] 40 20 91 180 Brightness[cd/m2 , ] 100 L=330 [uH] 80 60 L=470 [uH] 40 20 91 180 360 ROCL [k] Brightness[cd/m2 , L=220 [uH] L=330 [uH] L=470 [uH] 91 180 360 ROCL [k] Figure 17. Current consumption , [uH] 20 L=330 [uH] 10 L=470 [uH] 0 24 91 180 ROCE [k] Figure 21. ... | Original |
20 pages, |
small ldr 2 pins datasheet SM8143A ldr resistor Circuit diagram of LDR 1SS370 SM8143 ldr 10k transistor 91 330 SM8143 abstract |
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| Abstract: ] Brightness [cd/m 2 ] 16.7 330 91 180 18.7 248 141 12.4 16.7 470 180 180 25.1 248 148 14.2 16.7 330 180 91 33.5 467 130 17.4 16.7 220 , drive clock (fLDR), which is used to switch the coil drive transistor to boost the voltage from , and 25% OFF. When the coil drive transistor is ON, the coil current flows through the coil drive transistor, as shown in the following figure. and the inductor stores this energy as magnetic energy. ... | Original |
13 pages, |
small ldr 2 pins datasheet 3 pins LDR Datasheet INDUCTOR 220uH ldr 07 ldr blue LDR Datasheet ldr resistor SM8142 SM8142BD SM8142B SM8142AD 1SS370 SM8142A SM8142 abstract |
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| Abstract: 16.7 330 180 91 33.5 467 130 17.4 16.7 220 180 180 43.9 248 , ] fOUT [Hz] VOUT [Vp-p] Brightness [cd/m2] 220 91 31.85 472 191 41.5 330 , switch the coil drive transistor to boost the voltage from battery-level voltages up to a maximum of , transistor is ON, the coil current flows through the coil drive transistor, as shown in the following figure. and the inductor stores this energy as magnetic energy. When the coil drive transistor is OFF ... | Original |
14 pages, |
1SS370 Circuit diagram of LDR LDR 20K ldr resistor signal conditioning circuits for ldr SM8142 SM8142A SM8142AD SM8142B SM8142BD ldr 10k LDR 3PIN LDR 5K SM8142 abstract |
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| Abstract: MITSUBISHI RF POWER TRANSISTOR 2SC2097 2SC2097 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2097 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio , ELECTRIC MITSUBISHI RF POWER TRANSISTOR 2SC2097 2SC2097 NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT Z,n = 50Q 10D , parallel 82pF, 82pF, 82pF in parallel lOOpF, 4700pF, 4700pF, 0.22,uF, 0.22/iF, 33^F, 330^F in parallel lOOpF, 220pF, 4700pF, 0.1/iF, 330/jF in parallel 1mm0 enameled wire 27T. Notes: All coils are made from ... | OCR Scan |
3 pages, |
T40E 2SC2097 2SC2097 abstract |
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| Abstract: Tel.: Germany (06 21) 7 76-0 · USA (330) 4 25 35 55 · Singapore 67 79 90 91 · Internet http , : Germany (06 21) 7 76-0 · USA (330) 4 25 35 55 · Singapore 67 79 90 91 · Internet http , Pepperl+Fuchs Group · Tel.: Germany (06 21) 7 76-0 · USA (330) 4 25 35 55 · Singapore 67 79 90 91 · Internet , Pepperl+Fuchs, Printed in Germany Pepperl+Fuchs Group · Tel.: Germany (06 21) 7 76-0 · USA (330) 4 25 35 55 · Singapore 67 79 90 91 · Internet http://www.pepperl-fuchs.com 25.07.2002 · Function test with testing ... | Original |
4 pages, |
transistor 91 330 "din 7603" LVL-Z64 BSP 1 thread AC 128 pnp transistor 1.4571 resistant pg11 cable gland LIMIT SWITCH namur application VIBRATION LIMIT SWITCH datasheet abstract |
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| Abstract: Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear , amplifier transistor. Pins 8, 9, 13, and 14 are connected internally. Bias for the final power amplifier output transistor must also be provided through one of these two pins. Typically, pins 8 and 9 are , pin 8. Same as pin 8. 2-35 RF2114 RF2114 RF INPUT 50 ustrip 330 pF 100 nH 1 6.8 pF 2 14 2 13 PRE AMP POWER AMPLIFIERS 3 330 pF 50 ustrip RF OUTPUT ... | Original |
6 pages, |
transistor 91 330 RF2114 RF2114 abstract |
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| Abstract: manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been , output. This is an unmatched collector output of the final amplifier transistor. Pins 8, 9, 13, and 14 are connected internally. Bias for the final power amplifier output transistor must also be provided , Application Schematic for 150MHz Operation 50 ustrip 330 pF 100 nH RF INPUT 1 6.8 pF 2 14 2 13 POWER AMPLIFIERS 330 pF 50 ustrip RF OUTPUT PRE AMP 3 24 pF 12 4 ... | Original |
6 pages, |
uhf linear amplifier SOIC-14 RF2114 PCBA base station power amp schematics for a PA amplifier RF2114 RF2114 abstract |
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| Abstract: advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use , RF output. This is an unmatched collector output of the final amplifier transistor. Pins 8, 9, 13, and 14 are connected internally. Bias for the final power amplifier output transistor must also be , Operation 50 ustrip 330 pF 100 nH RF INPUT 1 6.8 pF 14 13 PRE AMP 50 ustrip 24 pF 12 4 1 nF 330 pF RF OUTPUT 2 3 P1-3 22 nH 11 120 pF 5 10 PA 6 ... | Original |
6 pages, |
transistor 91 330 SOIC-14 RF2114 schematics for a PA amplifier RF2114 abstract |
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| FC=0.5 TYPE=nmos RG=14.91 RDS=0 N=1 TT=0 TNOM=27 FFE=1 MOSFET2 Transistor: L=2 W=1150 AD * SIEMENS High Frequency Products MOS-TETRODES for HP Series IV (Libra) >>> T330 ) | +-O Source MOSFET1 Transistor: L=1 W=1150 AD=0 AS=0 PD=0 PS=0 NRD=0 NRS=0 MODEL=MOSFET1 www.datasheetarchive.com/files/infineon/ehdata/nl_mos/chips/t330.txt |
Infineon | 30/01/1998 | 1.69 Kb | TXT | t330.txt |
| FC=0.5 TYPE=nmos RG=14.91 RDS=0 N=1 TT=0 TNOM=27 FFE=1 MOSFET2 Transistor: L=2 W=1150 AD * SIEMENS High Frequency Products MOS-TETRODES for HP Series IV (Libra) >>> T330 ) | +-O Source MOSFET1 Transistor: L=1 W=1150 AD=0 AS=0 PD=0 PS=0 NRD=0 NRS=0 MODEL=MOSFET1 www.datasheetarchive.com/files/infineon/ehdata/nl_mos/tr_types/bf1009sw/t330.txt |
Infineon | 30/01/1998 | 1.69 Kb | TXT | t330.txt |
| FC=0.5 TYPE=nmos RG=14.91 RDS=0 N=1 TT=0 TNOM=27 FFE=1 MOSFET2 Transistor: L=2 W=1150 AD * SIEMENS High Frequency Products MOS-TETRODES for HP Series IV (Libra) >>> T330 ) | +-O Source MOSFET1 Transistor: L=1 W=1150 AD=0 AS=0 PD=0 PS=0 NRD=0 NRS=0 MODEL=MOSFET1 www.datasheetarchive.com/files/infineon/ehdata/nl_mos/tr_types/bf1009s/t330.txt |
Infineon | 30/01/1998 | 1.69 Kb | TXT | t330.txt |
| FC=0.5 TYPE=nmos RG=14.91 RDS=0 N=1 TT=0 TNOM=27 FFE=1 MOSFET2 Transistor: L=2 W=1150 AD * SIEMENS High Frequency Products MOS-TETRODES for HP Series IV (Libra) >>> T330 ) | +-O Source MOSFET1 Transistor: L=1 W=1150 AD=0 AS=0 PD=0 PS=0 NRD=0 NRS=0 MODEL=MOSFET1 www.datasheetarchive.com/download/88567787-145319ZC/bf1009s.zip (T330.TXT) |
Infineon | 08/09/2000 | 7.6 Kb | ZIP | bf1009s.zip |
| FC=0.5 TYPE=nmos RG=14.91 RDS=0 N=1 TT=0 TNOM=27 FFE=1 MOSFET2 Transistor: L=2 W=1150 AD * SIEMENS High Frequency Products MOS-TETRODES for HP Series IV (Libra) >>> T330 ) | +-O Source MOSFET1 Transistor: L=1 W=1150 AD=0 AS=0 PD=0 PS=0 NRD=0 NRS=0 MODEL=MOSFET1 www.datasheetarchive.com/download/63207102-145320ZC/bf1009sw.zip (T330.TXT) |
Infineon | 08/09/2000 | 1.91 Kb | ZIP | bf1009sw.zip |
| 2-400 MHz COMMON SOURCE N CHANNEL MOSFETS SILICON POWER TRANSISTORS & HYBRID POWER MODULES VHF/UHF TRANSISTORS 2-400 MHz COMMON SOURCE N CHANNEL MOSFETS Part Number Frequency POUT min PIN GAIN min nC min BIAS VCC BIAS ICQ RTH(j-c) max Package Style MHz W W db % V mA °C 1.75 M229 SD2904 SD2904 SD2904 SD2904 400 30 3.3 9.1 45 28 50 1.75 M113 SD2921 SD2921 SD2921 SD2921 www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/330-v1.htm |
STMicroelectronics | 31/03/1999 | 6.39 Kb | HTM | 330-v1.htm |
| 2-400 MHz COMMON SOURCE N CHANNEL MOSFETS SILICON POWER TRANSISTORS & HYBRID POWER MODULES VHF/UHF TRANSISTORS 2-400 MHz COMMON SOURCE N CHANNEL MOSFETS Part Number Frequency POUT min PIN GAIN min nC min BIAS VCC BIAS ICQ RTH(j-c) max Package Style MHz W W dB % V mA °C 1.75 M229 SD2904 SD2904 SD2904 SD2904 400 30 3.3 9.1 45 28 50 1.75 M113 SD2921 SD2921 SD2921 SD2921 www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/330-v2.htm |
STMicroelectronics | 14/06/1999 | 6.43 Kb | HTM | 330-v2.htm |
| .663 100.5 0.1739 38.3 0.9169 -23.2 0.800 0.7935 -94.0 0.635 91.8 0.1829 33.0 0.9050 -25 ! SIEMENS Small Signal Semiconductors ! BFS17S BFS17S BFS17S BFS17S ! Si NPN RF Bipolar Junction Transistor in SOT363 .782 154.2 0.0677 72.6 0.9885 -7.6 0.250 0.9623 -33.0 0.774 148.5 0.0831 69.0 0.9841 -9 .372 21.4 0.1314 9.1 0.8292 -73.1 2.600 0.6723 163.4 0.351 18.6 0.1223 16.3 0.8242 -80.1 2.800 0.6797 157.2 0.330 16.5 0.1207 25.6 0.8182 -87.1 3.000 0.6838 150.6 0 www.datasheetarchive.com/download/19898564-777356ZC/bfs17s.zip (SM5V0M20.S2P) |
Spice Models | 29/07/2012 | 311.83 Kb | ZIP | bfs17s.zip |
| ! SIEMENS Small Signal Semiconductors ! BF799 BF799 BF799 BF799 ! Si NPN RF Bipolar Junction Transistor in SOT23 .4 0.300 0.6902 -150.3 2.950 91.5 0.0415 36.5 0.7777 -14.1 0.400 0.6824 -163.1 2 .721 35.9 0.0950 87.6 0.7672 -44.0 1.400 0.7340 145.9 0.669 33.0 0.1085 89.8 0.7691 -47.6 1.500 0.7444 142.1 0.621 29.9 0.1227 91.1 0.7698 -51.4 1.600 0.7496 138.7 0.577 27.6 0.1389 91.5 0.7695 -55.3 1.700 0.7560 135.7 0.532 25.1 0.1563 91.6 0.7713 -59 www.datasheetarchive.com/download/52526200-777295ZC/bf799.zip (RT8V03M0.S2P) |
Spice Models | 29/07/2012 | 355.23 Kb | ZIP | bf799.zip |
| .3500 -91.0 4.500 0.6600 102.0 1.500 -5.0 0.1980 33.0 0.3500 -106.0 5.000 0.6700 91.0 1 ! SIEMENS Small Signal Semiconductors ! BFQ74 BFQ74 BFQ74 BFQ74 ! Si NPN RF Bipolar Junction Transistor in CEREC-X ! VCE = 10 V IC = 15 mA ! Common Emitter S-Parameters: July 1993 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG .0 0.0450 50.0 0.4400 -32.0 1.000 0.5200 -171.0 5.920 78.0 0.0510 51.0 0.4200 -33.0 1 www.datasheetarchive.com/files/siemens/ehdata/spar/bfq74/aa10v15m-v1.s2p |
Siemens | 09/08/1994 | 1.5 Kb | S2P | aa10v15m-v1.s2p |