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Part Manufacturer Description Datasheet BUY
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS1-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERDIP-16 visit Intersil

transistor 9014 C npn

Catalog Datasheet MFG & Type PDF Document Tags

CP1005

Abstract: 9011 9012 9013 9014 9018 IF AM/FM IF KM 9011/8 KM901I/8 KM90II/8 -î^-àm/I AF Amp. J KM 9014 Or KM90I5 AF A,np 2 KM90I4 KM9015 Oulpul KM90I:.' SP. -Q KM90i:i type polarity applications case KM 9011 NPN AM/FM IF, AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 ,  V7*. KM 9000 SERIES AM FM RADIO TRANSISTOR KIT SELECT ION GUIDE FOR AM FM RADIO TRANSISTOR KIT AM RECEIVER FM RECEIVER W FM RF KM 9016 Conv. IF) IF 2 KM90II KM 90H KM 9011 AF
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CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor

B 9014 npn

Abstract: C 9014 transistor C E B C Packing Tape Box Bulk 1 of 3 QW-R201-031.B 9014 NPN SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , TECHNOLOGIES CO., LTD www.unisonic.com.tw C 200-600 D 400-1000 2 of 3 QW-R201-031.B 9014 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static Characteristic 100 70 60 IB , Lead Free Plating 9014-x-T92-B 9014L-x-T92-B 9014-x-T92-K 9014L-x-T92-K Package
Unisonic Technologies
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9014L B 9014 npn 9014 transistor data sheet transistor 9014 npn data sheet transistor 9014 TRANSISTOR c 9014 9014 transistor specification 9014L-

transistor c 9018

Abstract: Transistor CL 100 r-t-1 fr AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl loo CL 9018 NPN AM/FM IF, FM CONVERTER V N«â'"â'¢ J MICRO ELECTRONICS LTD , [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
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transistor c 9018 Transistor CL 100 transistor 9013 NPN audio output transistor 9014 NPN 9016 transistor V. 9014 c

BR 9014 transistor

Abstract: BR 9014 ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , ST 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C , =25 C 5 4 2 5 o 7 5 10 2 ST 9014 v=0 2 10 -1 10 -6 3 tp v= T , current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 o 100 C
Semtech Electronics
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BR 9014 transistor BR 9014 TRANSISTOR 9014 ST 9014 C BR 9014 C 9014

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor s Lì >J à .-« j&lA CL9000 SERIES AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM/FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl â'ž 0 o CL 9018 NPN AM/FM IF, FM CONVERTER C , SPECIFICATIONS [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
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npn 9016 transistor F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013 transistor 9015 c
Abstract: © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-031.C 9014  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT , UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW , ), (mV)  NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that , : Emitter B: Base C: Collector  TO-92 Pin Assignment 1 2 3 E B C E B C Packing Unisonic Technologies
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9014G-

transistor 9014 C npn

Abstract: V. 9014 c HN 9014 NPN Silicon Expitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C, and ] ^^ D, according to its DC current gain. As complementary type the PNP transistor HN 9015 is recommended. 3 c E On special request, these , .0o.55 TRANSISTOR PACKAGE OUTLINE" on page 80 for the 2.5 available pin options. â'"^ E ;0 0 0 C B TO-92 Plastic , collector current HN 9014 ;c//e=20 i/ vCEsat 0,3 SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary
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9014 C transistor 9014 c S 9014 npn V 9014 c 9014c transistor npn c 9014

BR 9014

Abstract: 9014 ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 , versus collector current dB 20 18 ST 9014 14 dB 20 VCE=5V f=1KHz Tamb=25o C 18 , 9014 I C=0.2mA R G =2K f=1KHz f=200Hz Tamb=25o C 14 12 10 1K 8 10 8 6 6 500
Semtech Electronics
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st 9014 BR 9014 C TRANSISTOR C 9014 H ts 9014

BR 9014

Abstract: BR 9014 transistor ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , VCE=10V 3 0.05 r thA Tamb=25 C 5 4 2 5 o 7 5 10 2 ST 9014 v , voltage versus collector current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 , Noise figure versus collector current dB 20 18 ST 9014 VCE=5V f=1KHz Tamb=25o C 14 dB
Semtech Electronics
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st9014 c 9014 c 024 c 9014

BR 9014

Abstract: BR 9014 transistor ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As , ST 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 oC 5 4 o 25 C , =25 C 5 4 2 5 o 7 5 10 2 ST 9014 v=0 2 10 -1 10 -6 3 tp v= T , current V 0.5 ST 9014 ST 9014 3 10 VCE=5V I C/I B =20 5 4 3 0.4 o 100 C
Semtech Electronics
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s 9014 transistor

9014 ch

Abstract: transistor npn c 9014 Vi4». ¡;-i\> V IliÌ Vi- i m B bJ ;7*y V7l_l IlkaW AM. FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT TYPE POLARITY APPLICATIONS CASE KM 9011 NPN AM/FM IF, AM CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO DRIVER KM 901S PNP AUDIO DRIVER KM 9016 NPN FM RF KM 9018 NPN AM/FM IF, FM CONVERTER MICRO , - - 1 10 lC CmA) KM 9014 KM 9015 100 HFE 80 60 40 20 0
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9014 ch 100-10L 9018 Transistor-9013 h 9011 9012 pnp transistor

transistor npn c 9014

Abstract: 9014 NPN UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES , . UNIT V V V nA nA V V V pF MHz dB 1 QW-R201-031,A UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE UTC A 60-150 B 100-300 C 200-600 UNISONIC , -92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS
Unisonic Technologies
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9014 NPN

BR 9014

Abstract: BR 9014 c TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER , S 9014 VCE=5V 5 4 3 400 2 10 P tot 300 IC Tamb=100 o C 5 4 o 25 C , versus collector current V 0.5 S 9014 S 9014 3 10 VCE=5V I C/I B =20 5 4 3 , versus collector current dB 20 18 S 9014 VCE=5V f=1KHz Tamb=25o C 14 dB 20 18 100K , ) Rank Range A B C D 60-150 100-300 200-600 400-1000 S9014 Admissible power
Bytes
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transistors BR 9014

utc 9014

Abstract: C 9014 transistor UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES , V V nA nA V V V pF MHz dB 1 QW-R201-031,A UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE A 60-150 B 100-300 C 200-600 D 400-1000 , -92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise , 450 150 -55 ~ +150 V V V mA mW °C °C Collector-base voltage Collector-emitter voltage
Unisonic Technologies
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utc 9014 9014 current rating UTC9014 low noise transistor 9014 datasheet transistor 9014 UTC 9015

BR 9014

Abstract: BR 9014 transistor ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , O Storage Temperature Range TS -55 to +150 O C C G S P FORM A IS AVAILABLE , - B hFE 100 - 300 - C hFE 200 - 600 - D hFE 400 -
Semtech Electronics
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BR 9015 9015 PNP transistor c 9015 transistors BR 9015 TS 9015 C 9015 transistor

transistor 9014

Abstract: BR 9014 NPN SILICON TRANSISTOR 9014 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 ELECTRICAL CHARACTERISTICS Parameter 2.BASE 1 2 3 3.COLLECTOR Tamb=25 unless otherwise specified Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 Collector-emitter , 60 1000 150 MHz f =30MHz CLASSIFICATION OF HFE(1) Rank A B C D Range
Wing Shing Computer Components
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9014 to-92

BR 9015

Abstract: transistor 9015 c ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD , 300 - C hFE 200 - 600 - D hFE 400 - 1000 - -V(BR)CBO 50
Semtech Electronics
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BR 9015 C transistor 9015 9015* Transistor 9015 transistor ST 9015 C transistor 9015 NPN

br 9015

Abstract: pnp transistor 9015 ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be , O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD , 300 - C hFE 200 - 600 - D hFE 400 - 1000 - -V(BR)CBO 50
Semtech Electronics
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9014 D datasheet transistor 9015 pin configuration NPN transistor 9014

IC CA3138

Abstract: RCA-CA3138 3875081 G E Arrays _ SOLID STATE CA3138, CA3138A High-Current, High-Beta N-P-N Transistor , high-current n-p-n transistor arrays containing four isolated (discrete) sealed-junction high-current n-p-n , CURRENT (lc) 1 A POWER DISSIPATION IPDI At TA up to 25°C-. For Each Transistor . 1 W Total Package , Discrete Sealed-Junction High-Current N-P-N Transistors Features: â  High Current -1 A â  High Beta - , operate over the full military temperature range of -55°C to +125°C. Applications: â  High-Current
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RCA-CA3138 IC CA3138 relay driver ckt transistor LC 77 9ZCS-24299 92CS-26926RI

BR 9014

Abstract: BR 9015 ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base , mA Output Capacitance at -VCB = 10 V, f = 1 MHz C C Symbol A B C D Min. Max
Semtech Electronics
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9015 TO-92 af 9015 transistor
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