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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

transistor 70603

Catalog Datasheet MFG & Type PDF Document Tags

transistor 70603

Abstract: 70603 nonvolatile memories is a floating gate memory transistor. Details of the memory cell operation are included , . These specifications are subject to change without notice. 706-03 12/97 29 1 2 3 4 5 6 7 8 , 706-03 12/97 SST Product Reliability Technical Paper TABLE 1 GENERAL QUALIFICATION REQUIREMENTS , problems. 5 706-03 12/97 9 10 11 12 13 14 15 16 SST Product Reliability Technical , Duration: 1000 cycles. © 1998 Silicon Storage Technology, Inc. 6-32 706-03 12/97 SST Product
Silicon Storage Technology
Original

70603 scr

Abstract: transistor 70603 FIGURE 1. CMOS Switch Cross Section Showing Parasitic P-N Junctions Document Number: 70603 03-Aug -99 , a CMOS structure www.vishay.com 2 Document Number: 70603 03-Aug -99 AN205 Vishay , advances in design techniques, such as the use of buried layers (to reduce transistor gain) and isolated , , latchproof. Document Number: 70603 03-Aug -99 A1 A2 GND +5 V DG408 10 kW EN V­ IN4148 , . Overvoltage-Induced Errors for the Resistor-Protected Circuit of Figure 6 Document Number: 70603 03-Aug -99
Vishay Siliconix
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DG458 70603 scr transistor 70603 70603 EQUIVALENT OF ZENER DIODE IN4148 1N4148 1N914

70603 scr

Abstract: 70603 . CMOS Switch Cross Section Showing Parasitic P-N Junctions Document Number: 70603 06-Aug -03 , CMOS structure www.vishay.com 2 Document Number: 70603 06-Aug -03 AN205 Vishay Siliconix , advances in design techniques, such as the use of buried layers (to reduce transistor gain) and isolated , , latchproof. Document Number: 70603 06-Aug -03 A1 A2 GND +5 V DG408 10 kW EN VIN4148 , . Overvoltage-Induced Errors for the Resistor-Protected Circuit of Figure 6 Document Number: 70603 06-Aug -03
Vishay Siliconix
Original
diode pico-amp DG508A HI-508A

STK407

Abstract: stk407 040 max Storage temperature Per power transistor 150 ts °C 125 °C ­30 to +125 , . 7060-3/4 STK402-020 1.0 7 5 3 2 THD - PO 50 Tc = 25°C VCC = ±19 V VG = 30 dB RL =
SANYO Electric
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STK407 stk407 040 stk407 090 stk407 070 SANYO STK407 070 stk407 100 ENN7060A STK402-000 STK407-000 4189-SIP15 STK402-200 SIP15

70603 scr

Abstract: transistor 70603 #70603. Siliconix 1 AN205 if < 30 mA? i Leakage Rd ­ + VF S Rg D RL + Vg , layers (to reduce transistor gain) and isolated polysilicon resistors (for current limiting), all VS1
Temic Semiconductors
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diode 1n4148 equivalent test diode in4148 MAX358

130009 power transistor

Abstract: 70603 THN4201 Series Semiconductor SiGe NPN Transistor SOT-523 Application Unit in mm LNA and wide band amplifier up to GHz range Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, VCE = 3 V, IC = 20 mA MAG = 13 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Transition , / 70.603 3.703 / 66.716 3.311 / 63.087 2.994 / 59.528 2.731 / 56.083 2.509 / 52.786 2.328 / 49.429
AUK
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130009 power transistor 74718 159237 34053 166722 60310 THN4201U THN4201E THN4201Z 000GH 200GH 400GH