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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor 4894

Catalog Datasheet MFG & Type PDF Document Tags

DK 53 code transistor

Abstract: transistor 4894 DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary , specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS DESCRIPTION · Two , Per transistor, for the PNP transistor with negative polarity VCBO collector-base voltage open , specification Transistor complementary pair PUMZ1 LIMITING VALUES In accordance with the Absolute , transistor, for the PNP transistor with negative polarity VCBO collector-base voltage open emitter
Philips Semiconductors
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2108 npn transistor

Abstract: Dual General Purpose Transistors SC70-6 DISCRETE SEMICONDUCTORS DATA SHEET PUMX1 Dual NPN transistor Preliminary specification , specification Dual NPN transistor PUMX1 FEATURES APPLICATIONS DESCRIPTION · Two transistors in , DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO , Philips Semiconductors Preliminary specification Dual NPN transistor PUMX1 LIMITING VALUES In , . MAX. UNIT Per transistor VCBO collector-base voltage open emitter - 50 V VCEO
Philips Semiconductors
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"Dual PNP Transistor"

Abstract: Dual PNP Transistor DISCRETE SEMICONDUCTORS DATA SHEET PUMT1 Dual PNP transistor Preliminary specification , specification Dual PNP transistor PUMT1 FEATURES APPLICATIONS DESCRIPTION · Two transistors in , DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO , Philips Semiconductors Preliminary specification Dual PNP transistor PUMT1 LIMITING VALUES In , . MAX. UNIT Per transistor VCBO collector-base voltage open emitter - -50 V
Philips Semiconductors
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BLT13

Abstract: BP317 DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification , specification UHF power transistor BLT13 FEATURES DESCRIPTION · High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. · High gain · , transistor BLT13 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , specification UHF power transistor BLT13 APPLICATION INFORMATION RF performance at Ts 60 °C in a
Philips Semiconductors
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BP317 MAM227 SCDS48

358 SMD transistor

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , transistor FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. APPLICATIONS · , DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e , specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System , soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1
Philips Semiconductors
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358 SMD transistor MAM043 771-BLT80-T/R

MBG749

Abstract: PHN110 DISCRETE SEMICONDUCTORS DATA SHEET PHN110 N-channel enhancement mode MOS transistor , transistor PHN110 FEATURES DESCRIPTION · High speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. · No secondary breakdown · Very low on-resistance , transistor PHN110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , specification N-channel enhancement mode MOS transistor PHN110 THERMAL CHARACTERISTICS SYMBOL
Philips Semiconductors
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MBG749 MAM116

4894

Abstract: 4312 020 36640 DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , transistor BLT80 FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. 4 , DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 , transistor BLT80 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17
Philips Semiconductors
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4894 4312 020 36640 KM10 SMD ic catalogue

2222 730

Abstract: BLT81 DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , power transistor BLT81 FEATURES · SMD encapsulation · Gold metallization ensures excellent , communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a , 2 Philips Semiconductors Product specification UHF power transistor BLT81 LIMITING , VALUE UNIT 32 K/W Philips Semiconductors Product specification UHF power transistor
Philips Semiconductors
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2222 730

BLT81

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , Semiconductors Product specification UHF power transistor BLT81 FEATURES · SMD encapsulation · Gold , transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 , power transistor BLT81 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , Product specification UHF power transistor BLT81 CHARACTERISTICS Tj = 25 °C unless otherwise
Philips Semiconductors
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Abstract: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes , transistor BLT81 FEATURES â'¢ SMD encapsulation â'¢ Gold metallization ensures excellent reliability , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic , . 77 2 Gp (dB) Philips Semiconductors Product specification UHF power transistor , Semiconductors Product specification UHF power transistor BLT81 CHARACTERISTICS Tj = 25 °C unless Philips Semiconductors
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Abstract: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes , transistor BLT80 FEATURES â'¢ SMD encapsulation â'¢ Gold metallization ensures excellent reliability , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic , Semiconductors Product specification UHF power transistor BLT80 LIMITING VALUES In accordance with , characteristicsâ' 1. Ts is the temperature at the soldering point of the collector pin. 2. Transistor mounted on Philips Semiconductors
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Optocoupler with transistor

Abstract: 74HC04 NOT GATE datasheet photocurrent which is amplified by the current gain (HFE) of the transistor. The gain of the optocoupler is , to the LED forward current. The current gain (HFE) of the transistor is dependent upon the voltage , . The first CTR, the non-saturated or linear operation of the transistor, is the most common , transistor is operated in the linear mode. Normalized CTRCE(SAT) is illustrated in Figure 2. The saturated , (- ­ 50 µA 0.072 ) 2 mA 100% RL(MIN) =48.94 K, select 51 K ±5% VCC The switching speed of
Infineon Technologies
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74HC04 Optocoupler with transistor 74HC04 NOT GATE datasheet optocoupler NPN HC04 phototransistor with amplifier "linear output" 1-888-I

c39 transistor

Abstract: c38 transistor DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product , specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION · Internal input and , transistor is encapsulated in a 4-lead SOT262A2 flange envelope with 2 ceramic caps. The flange provides , transistor BLV950 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX
Philips Semiconductors
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c39 transistor c38 transistor transistor c36 transistor c37 PHILIPS BLV950 Philips 2222 052 MAM031 SCDS47

OPTOCOUPLER 10v output

Abstract: static characteristics of optocoupler photocurrent which is amplified by the current gain (HFE) of the transistor. The gain of the optocoupler is , to the LED forward current. The current gain (HFE) of the transistor is dependent upon the voltage , . The first CTR, the non-saturated or linear operation of the transistor, is the most common , CTRCE operation of the coupler as a function of LED current and ambient temperature when the transistor , -(0.072 ) 2 mA - ­ 50 µ A 100% RL(MIN) =48.94 K, select 51 K ± 5
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OPTOCOUPLER 10v output static characteristics of optocoupler optocoupler IL COUPLER CB optocoupler base resistor R/optocoupler base resistor

BFG505W

Abstract: transistor Product specification File under Discrete Semiconductors, SC14 August 1995 Philips Semiconductors Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES · , NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System , transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO , specification NPN 9 GHz wideband transistor BFG505W BFG505W/X; BFG505W/XR handbook, halfpage 250
Philips Semiconductors
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MBK523 MSB842 SCD35

BFG520W

Abstract: transistor Product specification File under Discrete Semiconductors, SC14 August 1995 Philips Semiconductors Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES · , Product specification NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute , NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL V(BR , Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520W BFG520W/X
Philips Semiconductors
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BFG520W/XR SCD33

74HC04

Abstract: HC04 energy into a photocurrent which is amplified by the current gain (HFE) of the transistor. The gain of , phototransistor collector current to the LED forward current. The current gain (HFE) of the transistor is , complete the interface design. The first CTR, the non-saturated or linear operation of the transistor, is , when the transistor is operated in the linear mode. Normalized CTRCE(SAT) is illustrated in Figure 2 , (NFCE(SAT) found in Figure 2. (2) RL(MIN) = 48.94 K, select 51 K ± 5 % The switching speed of
Vishay Semiconductors
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2222 031 capacitor philips 2222 424

Abstract: 2222 031 capacitor philips DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product , VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION · High power gain · , view MAM098 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor , provides the common source connection for the transistor. PINNING - SOT262A1 PIN DESCRIPTION 1 , specification VHF push-pull power MOS transistor BLF247B LIMITING VALUES In accordance with the
Philips Semiconductors
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2222 031 capacitor philips 2222 424 2222 031 capacitor philips SCD34

xl 6009

Abstract: MLC660 DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification , transistor BLV910 FEATURES DESCRIPTION · Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a , waste. 1995 Apr 11 2 Philips Semiconductors Product specification UHF power transistor
Philips Semiconductors
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xl 6009 MLC660 MLC662 L6 PHILIPS MAM141 SCD38

ua 722 fc

Abstract: transistor Product specification File under Discrete Semiconductors, SC14 August 1995 Philips Semiconductors Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES · , Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the , specification NPN 5 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL , specification NPN 5 GHz wideband transistor BFG25AW BFG25AW/X; BFG25AW/XR handbook, halfpage 100
Philips Semiconductors
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ua 722 fc
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