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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

transistor 3Ft

Catalog Datasheet MFG & Type PDF Document Tags

transistor 3Ft

Abstract: 75d05 FUJI STUMsrosoe 2DI 75D-050A 2-Pack BJT 600 V 75 A POWER TRANSISTOR MODULE â *NNS: ! Features myi) i; Krt» Including Free Wheeling Diode â'¢ hFE^'SiV,* High DC Current Gain â'¢ Insulated Type â ffl^ : Applications â'¢ XVtJX'f High Power Switching â'¢ AC A.C Motor Controls â'¢ DC*-* , 1.5 V il 3ft m 3ft * M ^ hFE lc = 75A, Vce â'" 5V 100 - VcE(Sat) IC-75A, IBâ'"1.5A 2.0 V â , ) Transistor 0.35 °C/W m fé it Rth(j-c) 1.85 °c/w m fé Dt Rth(c-f) With Thermal Compound 0.05 6C/W
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transistor 3Ft 75d05 fuji 2di fuji bjt 3Ft transistor VCBo-600V E82988

transistor b136

Abstract: 3ft 71 transistor 6DI15MS-050(15A) â'" 1: Outline Drawings POWER TRANSISTOR MODULE I^H: - Features , Ic 15 A 1ms Icp 30 A DC -Ic 15 A ^ â'" x V 3ft DC Ib 1 A 1ms I BP 2 A us? firn* one Transistor Pc 60 W s ^ as a « Ti + 150 Jx Tstg â'"40â'"(-125 n s m 65 g Sà m ÃW J± 1 AC 1 min , Symbols Test Conditions Min Typ Max Units Ã"ft fi ÌA Rth(j-c) Transistor 2.1 °C/W M « fit Rth(j-c , ) Itl'tÉâil ' Characteristics 3000 â'¢ait m â'¢3ft * 46 m hrr 1000 500 300 100 50 30 1
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transistor b136 3ft 71 transistor V15130 sr5 diode T151 T460 B-136

3ft 05 transistor

Abstract: c2kc Icp 200 A DC -lc 100 A * - ^ « 3ft DC ib 6 A 1ms i bp 12 A 3 ? 9 one Transistor Pc 620 W two , 2DI100D-050(iooa) POWER TRANSISTOR MODULE â 45ft ' Features â'¢ 7 IJ Krt» Including Free , Items Symbols Test Conditions Min Typ Max Units m fé m Rth(j-c) Transistor 0.2 "C/W m fé at , » (A) M !± V.uuâ'ž (V) 0.5 0.3 0.1 â¡ u f Ig 3ft lc (A) 200 160 120 80 40 Collector , Thermal Resistance (Transistor) z: 10" 2 10"1 B? W t (sec) Transient Thermal Resistance (Diode) ioc
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3ft 05 transistor c2kc diode F460 2di100d050 MJE 340 transistor T930 J155UM

1DI50K-055

Abstract: 1DI5OK-O55(50A) / , ¡ Isf DC lc 50 A 1ms ICP ' 100 A DC -lc -â'"- A â'" x M 3ft DC Ib 3 A 1ms Ibp 6 A ? Is? on© Transistor Pc 300 W two Transistors Pc - â  W S p SIà « H T, + 150 °C ÃM # IS. Tsig â'" 40â'"h 125 , Conditions Min Typ Max Units m fi îa Rth(j-c) Transistor 0.42 "C/W M S ÃÃ' Rlh(j-c) Diode (FWD) 1.6 , ) \ 0 200 400 600 a 9 -IS v9toW± Vce [V] Reverse Biased Safe Operating Area 2000 1000 500 ¡S 3ft
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1DI50K-055 OC30C3000000

transistor b104

Abstract: transistor 3Ft 2DI1OOMA-O5OU50A) POWER TRANSISTOR MODULE Wfä-fk â'¢ Features â'¢ hFEJPiÃ^ High DC Current Gain â'¢ x-f^^^t:"â'"Krfr'&u High speed switching â'¢ yj-fr^'J^yp'-it-FfiM Including Free Wheeling , * Br « 3ft Iebo VEeo=10V 400 rriA ^U^-U'yi" ffltSÅ' -vce â'" lc â'"100A 1.9 V it :M M 3ft J* W , Symbols Test Conditions Min Typ Max Units & & tt Rth(j-c) Transistor 0.2 °c/w m fi îa Rlh(j-c) Diode , ) C'C/W) 0.01 0.005â'";^ 10* 10' \0' H t (msec] Transient Thermal Resistance (Transistor) 0.4
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transistor b104 M203 T760 tsc9

3ft 05 transistor

Abstract: 30kgf EVL31-055(iooa) POWER TRANSISTOR MODULE : Features : Outline Drawings â'¢ 7 U U Jtâ'" KrtM , -Ic 100 A AI-KU RBE1 J Kk L)JPr8E2L_o E 2 SUD 3ft DC Ib 6 .A 1ms Ibp 12 A one Transistor Pc 500 W two Transistor« Pc 1000 W ote: 1: WMiiti Recommendable Value; 2.5~3.0N'm|25~30kgf , ) Transistor 0.25 °C/W m fi at Rth(j-c) Diode 0.6 "C/W m fi fit Rth(c-f) With Thermal Compound 0.03 , (Transistor) 10" « et Rlh(i-c) ['C/W] 10 5 3 1.0 0.5 0.3 0.1 0.05 0.03 0.01 10-" 10"1 O'sec
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30kgf

6DI30A-120

Abstract: transistor 3Ft FUJI (lUHtälGgOe 6DI30A-120 6-Pack BJT 1200 V 30 A POWER TRANSISTOR MODULE : Features â'¢ High Voltage â'¢ 7'J â'"U Krt/8 Including Free Wheeling Diode â'¢ &BB Insulated Type â ffià , 1ms Ibp 6 A one Transistor Pc . 230 W six Transistors Pc 1380 W ^ if T, + 150 °C # # &  , S: ïfà 1: 3ft *£ il ^ hFE Ic = 30A, VCE = 5V 70 - - VcE(Sat) le â'"30A, Ib = 1.0A , : Thermal Characteristics Items Symbols Test Conditions Min Typ Max Units m » ta Rth(j-c) Transistor
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transistor and schematic symbols M606

1MBH65D-090A

Abstract: T760 1MBH65D-090A H±IGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR Mfe-fk ' Features ^feTs'tv^s? High Speed Switching »i&tSiO^/E Low Saturation Voltage ^Xtl'f-YmXiMOS'r-mik) High Impedance Gate »/jvgjsmall Package : Applications > WE&iiiSyfli® Voltage Resonance Power Supply Induction Heater , B-17 ^±IGBT 1MBH65D-090A : Characteristics 100 80 % 60 3ft lc CA) ao 20 Vge= 15V, 12V , Vce (V) tuamcm«) Typical Output Characteristics a y 9 « 3ft lc CA) 100 80 60 JO 20 Tj =
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X810 660 tg diode 052 B 660 TG

transistor 3bt

Abstract: marking 3ft sot323 BC856W SERIES BC857W SERIES SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package , SUPERminiTM PNP SILICON TRANSISTOR Semiconductor Corp. SOT-323 CASE - MECHANICAL OUTLINE LEAD CODE , 2) BASE 3) COLLECTOR MARKING CODE 3AT 3BT 3ET 3FT 3GT * Reverse Lead Codes Available, Add "R" to
Central Semiconductor
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BC857BW transistor 3bt marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING 100MH BC856AW BC857AW BC856BW BC857CW

BI 344 TRANSISTOR

Abstract: transistor 3Ft Items a u ÿ ? ^ F ilÆ n s y ? Mfl SOE · I S "j ? DC : 3ft 1ms DC DC 1ms o n e CASE UL M117 E82988 , = 1 L- ÿ ? *R £ « S St » » OE h ê sì Transistor W °C -c g V N ote : Recommendable Value , 9000 4.0 4.5 7.0 15.0 3.0 - 750 30 4.0 1.5 mA mA V . V g 3ft 1 3 fE ffi ^ U i ' i '- x ; 7 ? fà , Symbols Rth(j-e) R th(j-c) R th(j-c) Test Conditions Transistor Diode Zener Diode With Thermal , ] Transient Thermal Resistance (Transistor) Bÿ M t [sec] K )« tt Transient Thermal Resistance (F.R.D
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BI 344 TRANSISTOR B341 130S3-

transistor 3bt

Abstract: marking 3ft sot323 BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package , SILICON TRANSISTOR SOT-323 CASE - MECHANICAL OUTLINE LEAD CODE: STANDARD 1) BASE 2) EMITTER 3 , CODE 3AT 3BT 3ET 3FT 3GT * Reverse Lead Codes Available, Add "R" to the end of the Part # and
Central Semiconductor
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transistor 3et 3Ft sot marking code 200a

A2168

Abstract: MARKING 3FT NEC DATA SHEET ELECTRON DEVICE SILICON TRANSISTOR GA1 L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DIMENSIONS in millimeters 2.1+0.1 CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current 'CBO 100 nA VCB = 50 V, |E = 0 DC Current Gain hFEr 135 450 600 VCE = 5.0 V, lC = 5.0 m A DC Current Gain hFE2# 100 380 VCE = 5.0 V, lc = 50 mA , 135 to 270 L37 2n0 to 400 I 3ft 300 to Ron NEC cannot assume any responsibility for any circuits
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A2168 1988M

YTFP450

Abstract: SC651 YTFP450 ORIVE APPLICATIONS, FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-MOSH) HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR INDUSTRIAL APPLICATIONS U nit in m m 159M A X . 0Z2±aZ FEATURES: · Low Drain-Source O N Resistance : ·H ig h Forward Transfer Admittance : · Low Leakage C urrent : · Enhance«ent-Hode : RDS(0N)=0 3ft , TRANSISTOR IS AN ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. 1168 YTFP450
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SC651 VDS-10V SC-65 VGS-10V

2SC1168

Abstract: 2sc 3050 transistor 2sc1168 (pcTBiC) ^SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) On i t in mm O * ? - v- w K-BjtitW^ffl o Color TV Video Output Applications â'¢ ¡SifEf + o : VCEO = 300V â'¢ 3 u ^ : C0lj=5pF (Typ.) h ? ^ 3 : fT = 100MHz (Typ.) MAXIMUM RATINGS (Ta = 25 1C) CHARACTERISTIC SYMBOL RATING UNIT 3 u- ? * â'¢ -t - ^fHJBEE VCBO 300 V 3 f ^ * â'¢ I i » * MtlflE VCEO 300 V ii,)1 . - ^Htff VEBO 5 V 3 i> * « 3ft ic 150 mA i i * V 5f£ IE -150 mA 3 ? ? it 9k PC 12.5 W m # m st TJ 150
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2SC1168 2sc 3050 transistor AC74 TB-33 2-13A1A 50X50X2MA

Transistor BFT 10

Abstract: transistor 3Ft NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR BFT 72 3FT 73 BFT 74 BFT 72, BFT 73 and BFT 74 are plastic encapsulated transistor designed for video output stages in black and white and color TV receivers. These transistors feature lowtherma! resistance and exceptional ability to , ) Rth(j-c) 10 °C/W (1 ) The high frequency knee voltage of a transistor is that value of the , of the value at VqE = 50 V. La tension de coude è haute fréquence d'un transistor est, par dÃ
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Transistor BFT 10 bux c 651 emetteur 3ft73 CB-16

transistor WFA

Abstract: B408 diode 6DI10A-120(ioa) POWER TRANSISTOR MODULE : Features â'¢ 7 «Jâ'" Jfc'f y "siV^Jrâ'" Krtà , DC ic 10 A 1ms icp 20 A DC -ic 10 A * - * ® at DC le 1.5 A 1ms ibp 3 A or>e Transistor Pc , 100 mA â¡ ? â'¢ X £ -y ^HIJflJE â'" vce â'"Ic= 10a 2.0 V ¡1 at * 3ft m li * hFE le = 10a, Vce = , Symbols Test Conditions Min Typ Max Units & s RlhQ-c) Transistor. 1.25 °C/W & & ta Rthû-c) Diode , RtMi-c, Cc/w] o.i 10'' ICT' 10*' fli Hi (secJ ( Transient Thermal Resistance (Transistor) 10 0
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B-408 transistor WFA B408 diode B408 6DI1 t460 transistor 6DI1OA-12O

TA7362P

Abstract: 16-SUPPLY during scanning of D.T.S (Digital Tuning System). This IC contains muting transistor for two channels. ' , capacitor located from ( I ) to ( J ) PIN.) "ON" resistance of muting transistor is very small. (Muting attenuation level is large.) R0N=3ft (Typ.) Small number of externally mounted parts. Operating supply voltage , potential of muting transistor Qi and Q2 in the IC is fixed at 2Vjje, each permissive input voltage of pins , turned ON, the muting transistor in the IC are turned ON to carry out the muting operation. The muting
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TA7362P 16-SUPPLY je 371 Transistor ta7362 muting QD17E11 T-77-21

L9959

Abstract: "MC 140" transistor 2DI5OA-14O(50A) POWER TRANSISTOR MODULE : Features â'¢ Ã"Sfii/± High Voltage â'¢ 7 I) v , ?â'¢ Ve bo 10 V =1 U ? ? «3fE DC lc 50 A 1ms Icp 100 A DC -lc 50 A ^ â'" * % 3ft DC Ib 3 ' A â  1ms lep 6 : A onB Transistor Pc 400 : w two Transistors Pc 800 W m & SB S Jt Tj . +150 °C fà , Conditions Min Typ Max Units Ã"fc fâ ÃA Rihü-c) Transistor 0.31 â'¢c/w % île ÃA Rth(i-c) Recovery , iff2 10"' 10° 10' ffl t (sec) Transient Thermal Resistance (Transistor) tö°_. 10
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L9959 B444 B444 MODULE BU71 L995 B-444 L995-9
Abstract: j V i `T " .v a . - JU POWER TRANSISTOR MODULE · hFE*'"^ ' 'i'. ¡5 . ffla fs High DC , X $ * < y9 f ö m s - 7 .H J fc J E DC 1ms DC IH IW /E m 3ft * * - x u- ? 1 & * i M ' yx i - ÿ* £ m "fr it oe /m ? ÎI & 1ms one Transistor :b /m k îi& *f Jx , ) : Thermal Characteristics Items & & 3ft % S S ym b o ls ffi tic Ì/L ifc YA T est C o n d itio n s , Thermal Resistance (Transistor) '' .> P»J t (s e c ) f à m m m t i? * * - K )« tt Transient -
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FA-MT

Abstract: transistor and schematic symbols ETM36-O3O(200A) POWER TRANSISTOR MODULE - Features â'¢ High Current â'¢ hFE^'jiju High DC , * 9 >JÃE DC Ib 10 A 1ms Ibp 20 â  A on» Transistor Pc 1000 W Pc - W $£r "a* »(S Tj + , â¡ u ï ? L ^ M M 3ft Icbo Vceo = 400V 1 mA I i 7 í' L ® 1 Ã" Iebo Vebo=6V 200 mA â¡ U , Symbols Test Conditions Min Typ Max Units Ãft ffi Ã/L Rth(j-c) Transistor 0125 °C/W m s ta Rth(j-c , Transient Thermal Resistance (Transistor) -
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FA-MT P460 T810
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