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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor 377

Catalog Datasheet MFG & Type PDF Document Tags

73412

Abstract: NE64535 . 3-77 NPN Silicon Microwave Transistor , Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain , 10 15 20 25 30 35 Input Power, P in (dBm) Small Signal Bipolar Transistor , 0.1 0.2 0.3 0.4 0.5 1.0 Frequency, f (GHz) 2.0 5.0 5 3-3 Small Signal Bipolar Transistor , M M N È IP P*9« Ms. 3-11 3-25 3-77 3-90 3-103 3-116 3-157 3-25 3-11 3-25 3-173 70 80 30 65 35
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OCR Scan

PBL and Application Note

Abstract: ERICSSON ^ February 1999 PBL 377 70/1 High Performance Stepper Motor Drive Circuit Description PBL 377 70/1 is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 377 17/1 and special care has been taken to , stage. The circuit is pin-compatible with the PBL 3717/2 industry-standard driver. Two PBL 377 70/1 and , package* 20-pin SOIC-package Figure 1. Block diagram. To be released 1 PBL 377 70/1 Maximum
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OCR Scan

microstepping 3717

Abstract: BYV27 through the source transistor (see figure 6, arrow 2). 5 PBL 377 70/1 After the monostable has , February 1999 PBL 377 70/1 High Performance Stepper Motor Drive Circuit Description Key Features PBL 377 70/1 is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 377 17/1 and special care has been taken to , stage. The circuit is pin-compatible with the PBL 3717/2 industry-standard driver. Two PBL 377 70/1
Ericsson
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REGULATOR IC 377

Abstract: 3771 February 1999 PBL 377 17/1 60 V Stepper Motor Drive Circuit Description Key Features PBL 377 17/1 is a bipolar monolithic circuit intended to control and drive the current in one winding , . Two PBL 377 17/1 and a small number of external components form a complete control and drive unit for , package * 1 77 3 PBL 377 17/1 T 20-pin SO wide batwing package E * To be released 1 PBL 377 17/1 Maximum Ratings Parameter Pin no. Voltage Symbol * Min Max Unit
Ericsson
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TeS ERICSSON

Abstract: ERICSSON ^ April 1998 PBL 377 70 High P e r f o r m a n c e S t e p p e r M o t o r Dr ive Ci r cu i t Description PBL 377 70 is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 377 17 and special care has , power H-bridge output stage. The circuit is pin-compatible with the PBL 377 17 industry-standard drivers. Two PBL 377 70 and a small number of external components form a complete control and drive unit for
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OCR Scan

bd139 equivalent transistor

Abstract: transistor 2SA1046 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Switchmode Bridge Series , (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , " design. REV 1 3­696 Motorola Bipolar Power Transistor Device Data , 300 µs, Duty Cycle 2.0%. Motorola Bipolar Power Transistor Device Data 3­697 MJE16106 , VOLTAGE (VOLTS) Figure 5. Capacitance 3­698 Motorola Bipolar Power Transistor Device Data
Motorola
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bd139 equivalent transistor transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011

2SC1943

Abstract: bd135 TRANSISTOR REPLACEMENT GUIDE , High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18004D2 is state­of­art High Speed High gain BIPolar transistor (H2BIP). High , characteristics - are given to facilitate "worst case" design. 3­724 Motorola Bipolar Power Transistor , Adc IB1 = 0 0.4 4A VCC = 300 V 1.4 8 MJE18004D2 Motorola Bipolar Power Transistor Device Data , Bipolar Power Transistor Device Data MJE18004D2 TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V hFE
Motorola
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2SC1943 bd135 TRANSISTOR REPLACEMENT GUIDE TRANSISTOR 2sb546 BU108 c 3198 transistor transistor Electronic ballast mje13007 MJ15016 BU208A MJ16012 MJ10009 TIP101 TIP102

BD139 fall time

Abstract: TRANSISTOR REPLACEMENT GUIDE Bipolar Power Transistor Device Data 3­353 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , 3­354 Motorola Bipolar Power Transistor Device Data BUS98 BUS98A DC CHARACTERISTICS VCE , Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3­355 BUS98 BUS98A Table 1 , Figure 8. Peak­Reverse Current 3­356 Motorola Bipolar Power Transistor Device Data BUS98 BUS98A , oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc
Motorola
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BD139 fall time transistor cross reference 2n3055 motor control circuits MJ10021 equivalent 2N3055 equivalent MJ2268 204AA TIP106 TIP107 TIP31C TIP32C TIP120

BU208A equivalent

Abstract: BD237 similar MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 transistor is designed for high voltage, high­speed, power switching in inductive circuits where , facilitate "worst case" design. REV 1 Motorola Bipolar Power Transistor Device Data 3­487 , ) Pulse Test: PW = 300 µs, Duty Cycle 3­488 Motorola Bipolar Power Transistor Device Data , Figure 5. Collector Cutoff Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device
Motorola
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BU208A equivalent BD237 similar 2n3055 motorola BU208 BD-31 bdx54c equivalent TIP121 TIP122 TIP125 TIP126 TIP127 TIP73B

TRANSISTOR REPLACEMENT GUIDE

Abstract: bd139 equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor 1 kV SWITCHMODE Series , value. REV 3 3­830 Motorola Bipolar Power Transistor Device Data , %. Motorola Bipolar Power Transistor Device Data 3­831 MJH16006A TYPICAL STATIC CHARACTERISTICS VCE , . Capacitance 3­832 Motorola Bipolar Power Transistor Device Data MJH16006A TYPICAL INDUCTIVE , Transistor Device Data 3­833 MJH16006A Table 1. Inductive Load Switching Drive Circuit +15 1 µF 150
Motorola
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bd139 equivalent 2SC495 mje13007 equivalent 2sd880 equivalent 2N3055 equivalent transistor NUMBER BDT65C equivalent TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B

2SC123

Abstract: sec tip41c Test: Pulse Width = 5.0 ms, Duty Cycle 10%. REV 2 Motorola Bipolar Power Transistor Device , ) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. 3­856 Motorola Bipolar Power Transistor Device , Bipolar Power Transistor Device Data 3­857 MJW16206 SAFE OPERATING AREA INFORMATION 30 20 IC , limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for
Motorola
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2SC123 sec tip41c sec tip42c TRANSISTOR tip41c pin out image Motorola transistors MJE3055 TO 127 TRANSISTOR BC 327 MJF16206 TIP75C 2N6488 2N6490 2N6491 MJE13005

transistor bc 647

Abstract: bd139 3v Device 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS , future use and best overall value. REV 2 3­676 Motorola Bipolar Power Transistor Device Data , %. Motorola Bipolar Power Transistor Device Data 3­677 MJE13009 100 50 IC, COLLECTOR CURRENT (AMP) 20 , limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for
Motorola
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transistor bc 647 bd139 3v 50W AMP 2SD718 2SB688 BD679 coil 2N5684 circuit diagrams TIP41 TRANSISTOR REPLACEMENT TIPL752 TIPL752A TIPL753 TIPL753A TIPL755 TIPL755A

BU108

Abstract: TRANSISTOR C 3807 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , EMITTER EMITTER Figure 1. Darlington Schematic Motorola Bipolar Power Transistor Device Data , . Maximum Forward Bias Safe Operating Area 3­804 Motorola Bipolar Power Transistor Device Data , limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for
Motorola
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TRANSISTOR C 3807 2N5034 package transistor TIP107 2SA1046 2Sd331 npn transistor Aham-Tor MJF6388 MJF6668 2N6388 2N6668 E69369 TIPL760

TRANSISTOR REPLACEMENT GUIDE

Abstract: pin configuration transistor bd140 , High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The BUL45D2 is state­of­art High Speed High gain BIPolar transistor (H2BIP). High dynamic , characteristics - are given to facilitate "worst case" design. Motorola Bipolar Power Transistor Device Data , ns BUL45D2 3­326 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ , ns Crossover Time 225 450 BUL45D2 Motorola Bipolar Power Transistor Device Data 3­327
Motorola
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pin configuration transistor bd140 Replacement MOTOROLA 2sA671 transistor BU326 transistor NSD134 BDX54 TIPL760A MJ16110 MJ16010 MJE16002

mje13009 equivalent

Abstract: buv48 equivalent Motorola Bipolar Power Transistor Device Data 3­391 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Vcl = 300 V, VBE(off) = 5 V, Lc = 180 µH 2%. 3­392 Motorola Bipolar Power Transistor Device Data , Motorola Bipolar Power Transistor Device Data 3­393 BUV48 BUV48A Table 1. Test Conditions for , Measurements Figure 8. Peak­Reverse Current 3­394 Motorola Bipolar Power Transistor Device Data , , the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching
Motorola
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mje13009 equivalent buv48 equivalent BD241A MOTOROLA TIP41C EQUIVALENT BD4202 TRANSISTOR REPLACEMENT table for transistor BUV48/BUV48A

EQUIVALENT FOR mjf18004

Abstract: 2N3055 plastic Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific , Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , for future use and best overall value. REV 3 Motorola Bipolar Power Transistor Device Data , 275 500 400 800 3­716 Motorola Bipolar Power Transistor Device Data , 250 µs ns Crossover Time 350 500 Motorola Bipolar Power Transistor Device Data 3­717
Motorola
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EQUIVALENT FOR mjf18004 2N3055 plastic BU 647 motorola AN485 motorola MJ480 transistor 3655 MJF18004 MJE18004

BU108

Abstract: mj150* darlington mj15002 best overall value. 3­112 Motorola Bipolar Power Transistor Device Data , Bipolar Power Transistor Device Data 3­113 2N6282 thru 2N6284 2N6285 thru 2N6287 r(t), EFFECTIVE , a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ­ VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor , Power Transistor Device Data 2N6282 thru 2N6284 2N6285 thru 2N6287 NPN 2N6282, 2N6283, 2N6284 20
Motorola
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mj150* darlington mj15002 PNP transistor motorola mj2268 bc 574 BU100 All similar transistor 2sa715 silicon npn 2SD716 transistor 2N6286

BU108

Abstract: BU326 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistor . . . , SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , . Power Derating REV 7 Motorola Bipolar Power Transistor Device Data 3­379 , Motorola Bipolar Power Transistor Device Data BUV20 100 50 IC, COLLECTOR CURRENT (A) 10 1 There are two limitations on the power handling ability of a transistor: average junction temperature
Motorola
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2SC194 transistor Bc 574 2SC1419

MJ3001 equivalent

Abstract: Motorola transistors MJE3055 TO 127 for future use and best overall value. REV 3 Motorola Bipolar Power Transistor Device Data , Cycle 2%. 3­848 Motorola Bipolar Power Transistor Device Data MJW16010A TYPICAL STATIC , °C Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­849 MJW16010A TYPICAL , Figure 11. Crossover Time Motorola Bipolar Power Transistor Device Data MJW16010A Table 1. Inductive , Motorola Bipolar Power Transistor Device Data 3­851 MJW16010A GUARANTEED OPERATING AREA INFORMATION
Motorola
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MJ3001 equivalent BD907 equivalent Drive IC 2SC3346 mje340 equivalent transistor equivalent book 2sc2238 2N3055 transistor equivalent to220

transistor bd4202

Abstract: transistor tip120 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor High Voltage SWITCHMODE , BUL45F Unit Vdc Vdc Vdc Adc Adc Volts POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS BUL45 , Motorola Bipolar Power Transistor Device Data BUL45 BUL45F ELECTRICAL CHARACTERISTICS - continued (TC , Transistor Device Data 3­317 BUL45 BUL45F TYPICAL STATIC CHARACTERISTICS 100 TJ = 25°C TJ = 125 , Power Transistor Device Data BUL45 BUL45F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all
Motorola
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transistor bd4202 transistor tip120 MJE802 MOTOROLA MJ14000 MOTOROLA BUW34 MOTOROLA electronic ballast MJE13005 220AB
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