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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor 313 smd

Catalog Datasheet MFG & Type PDF Document Tags

TEMIC K153P

Abstract: TSHF5471 3 69 4 54141008 LED SMD ORANGE PLCC2 PACKAGE LED 8 313 8 54141012 LED SMD YELLOW PLCC2 PACKAGE LED 8 313 8 TEMIC Semiconductors 07.97 Technology , AOQ (ppm) 8 EFR (ppm) 313 LFR (FIT) 8 54141013 LED SMD HI INT RED PLCC2 PACKAGE LED 54141019 LED SMD PURE GREEN PLCC2 PACKAGE LED 8 313 8 65162 SRAM-2K*8 , plastic packages) Vibration (not plastic packages) ESD characterization Latch-up immunity SMD
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transistor 313 smd

Abstract: 5253B-8 low dropout, the internal pass transistor is powered separately from the control circuitry , Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1) kV 230 Peak ESD Damage , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (-1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA - 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense -
ON Semiconductor
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transistor 313 smd

Abstract: 5253B-8 dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with , package power dissipation must be observed. Reflow: (SMD styles only) (Note 1) Value 6.0 13 0 to 150 -65 , V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense VCONTROL = 5.0 V, VPOWER = 3.3 V, DVOUT = +1.0% VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 100 mA VCONTROL =
ON Semiconductor
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3pin transistor 313

Abstract: transistor 313 smd low dropout, the internal pass transistor is powered separately from the control circuitry , ESD Damage Threshold Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1.) 1. 60 , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (­1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA ­ 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense ­
ON Semiconductor
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Abstract: very low dropout, the internal pass transistor is powered separately from the control circuitry , maximum above 183°C. *The maximum package power dissipation must be observed. Reflow: (SMD styles only , 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense VCONTROL = 5.0 V, VPOWER = 3.3 V, VOUT = +1.0% VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 100 mA VCONTROL = 3.9 V, VPOWER = 3.13 V ON Semiconductor
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3pin transistor 313

Abstract: CS5253 low dropout, the internal pass transistor is powered separately from the control circuitry , Damage Threshold Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1) 1. 60 second , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (­1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA ­ 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense ­
ON Semiconductor
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CS5253

Abstract: CS5253B-8 low dropout, the internal pass transistor is powered separately from the control circuitry , Reflow: (SMD styles only) (Note 1) °C 2.0 ESD Damage Threshold °C -65 to +150 Storage , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (-1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA - 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense -
ON Semiconductor
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D2Pak-5 Package

Abstract: transistor 313 smd dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with , , TJ Storage Temperature Range ESD Damage Threshold Lead Temperature Soldering: Reflow: (SMD styles , Characteristic Test Conditions VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 , , VPOWER = 3.13 V, IOUT = 100 mA VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 3.0 A VCONTROL = 3.9 V, VPOWER =
ON Semiconductor
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Abstract: low dropout, the internal pass transistor is powered separately from the control circuitry , 0 to 150 Lead Temperature Soldering: kV 230 Peak Reflow: (SMD styles only) (Note 1 , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (â'1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA â' 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote ON Semiconductor
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transistor 313 smd

Abstract: Transistor D 2494 low dropout, the internal pass transistor is powered separately from the control circuitry , Range ESD Damage Threshold Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1 , Conditions Min Typ Max Unit Output Voltage VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 , VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA - 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense - 0.04
ON Semiconductor
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smd marking 58a

Abstract: smd transistor a4 Transistors IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 28 m (VGS = 10V) RDS(ON) 43 m (VGS = 4.5V) 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 , Transistors IC SMD Type KO3404 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source , V 1 820 pF IS Coss nA 0.76 Ciss Gate resistance A A 31.3 TJ
Kexin
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smd marking 58a smd transistor a4 a4 smd transistor smd transistor marking A4 DIODE smd marking A4 SMD TRANSISTOR A4 S

TH3L10

Abstract: c 4235 transistor npn 3.5 4.0 0.3 [°C/W] [MHz] 4.16 1.92 3.13 10 8 - Outline Package Figure , *1: Leaded package - Fig. 78-3; SMD package - Fig. 77-3 HSV series E-pack Bipolar , package - Fig. 78-3; SMD package - Fig. 77-3 1 · 8 0 0 · 6 3 4 · 3 6 5 4 *1 E-pack 50 5 , -220 E-pack 0.3 1.5 *1 0.2 ITO-220 82-4 DARLINGTON TRANSISTORS & TRANSISTOR ARRAYS , Characteristics VEBO Type No. [V] TO-220 150 ITO-220 82-4 MTO-3P 86-2 ITO-3P 88-3 Transistor
Shindengen America
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2SC4310 2SC4230 TH3L10 c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 2SB1282 3L10Z TK3L10
Abstract: April 1993 bbS3^31 003Q7D7 SMD « A P X Product Specification PowerMOS transistor 120 - â , Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power , P o w e r M O S transistor STATIC CHARACTERISTICS Tm = 25 'C unless otherwise specified b SY M , Specification Philips Semiconductors BUK457-500B PowerMOS transistor VGS(TO) / V r W/( 0 -
OCR Scan
Q03D70S

transistor 313 smd

Abstract: BUK457-500B b^E ]> Philips Semiconductors bbS3T31 00307CH 313 â  APX Product Specification PowerMOS transistor , Specification PowerMOS transistor BUK457-500B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS , Specification PowerMOS transistor BUK457-500B STATIC CHARACTERISTICS Tmb = 25 'C unless otherwise specified , 401 N AMER PHILIPS/DISCRETE b^E T> m bbS3^31 DQ3D7Q7 SMD «APX Philips Semiconductors Product
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T0220AB transistor 313 smd S3T31

transistor 313 smd

Abstract: BUK9515-100A Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9515-100A BUK9615-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor , = 25 °C Tmb = 25 °C - - 55 75 53 313 230 175 A A A W °C TYP. MAX. UNIT , specification TrenchMOS transistor Logic level FET BUK9515-100A BUK9615-100A STATIC CHARACTERISTICS , A IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V - 0.85 1.1 313 1.2 - A V V IF =
Philips Semiconductors
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SC18

MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: TRANSISTOR SMD MARKING CODE LF -323 SMD package, for example, has been designed "upside down" in comparison with the conventional SOT , specific design makes them ideal for RF, control or switching functions. Miniaturization of SMD packages , islands act as carriers of twin-diode pairs or transistor chips (RF and LF types). Alignment of pins on , SMD packages SOT-23, SOT-143, SOT-323, SOT-343, SOT-363 and ultramini package (bottom right) for , . Thus a four-pin RF bipolar transistor in the SOT-343 package attains about 1 dB more gain at 1.8 GHz
Siemens
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MOSFET TRANSISTOR SMD MARKING CODE nh TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31

752 C 1600 V CAPACITOR

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor T h e M , Operation 0.5 W, 1.0 to 2.0 GHz RF LINEAR POWER TRANSISTOR · CASE 305C -02, STYLE 1 SQE200-PILL , Capacitor 100A Transistor, BCV62 R2 R3 R4 R5 R6 R7, R8 TL1 to TL11 TP1 470 fi, Chip Resistor 0805 4.7 k fi, Chip Resistor 0805 8.2 k fi, Chip Resistor 0805 5 k fi, SMD Potentiometer 680 fi, Chip , 3.73 3.13 2.60 2.30 2.06 1.98 1.88 ± * 127 106 88 77 68 60 52 44 39 32 29 25 S 12 IS i2l 0.0186 0.0230
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OCR Scan
752 C 1600 V CAPACITOR F6401 IS22I MRF6401 DL110/D

transistor 313 smd

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor T h e M R F 6 4 0 1 is d e s ig n e d fo r C la s s A c o m m o n e m itte r, lin e a r p o w e r a m p lifie , , Capacitor 100 pF, ATC Chip Capacitor 100A Transistor, BCV62 R2 R3 R4 R5 R6 R7, R8 TL1 to TL11 TP1 470 W , Chip Resistor 0805 4.7 k ii, Chip Resistor 0805 8.2 kU, Chip Resistor 0805 5 ku, SMD , S22 L IS 21 I 28.4 17.1 9.10 6.15 4.65 3 73 3.13 2.60 2.30 2 06 1 98 1.88 f L 0 M Hz
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IS12I IS21I

smd transistor 3d

Abstract: skiip gb 120 SKiiP 232 GD 120 ­ 313 CTV / SKiiP 232 GD 120 ­ 3D / 3DU CTVU SKiiP 342 GD 120 ­ 314 CTV / SKiiP 342 , reliability in application error outputs are short circuit proof (Error Transistor turns off for currents , from 0805 to 0603) less size, better noise immunity exchange of through hole components by SMD , Transistor turns off for currents higher than 15 mA) Vexternal Rpull_up ERROR Detection C=1nF +
SEMIKRON
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smd transistor 3d skiip gb 120 semikron skiip 1242 gb 120 TRANSISTOR 132-gd skiip 342 GD 120 314 CTVU 4d SMD Transistor

DB 22 AR transistor smd

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency , , Capacitor 10 |aF, 16 V, Capacitor 100 pF, ATC Chip Capacitor 100A Transistor, BCV62 R2 R3 R4 R5 R6 R7, R , 0805 5 kS2, SMD Potentiometer 680 Si, Chip Resistor 0805 7.5 Si, Chip Resistor 0805 (iStrip Lines; See , 139 S 21 IS21 I 28-4 17.1 9.10 6.15 4.65 3.73 3.13 2.60 2.30 2.06 1.98 1.88 Z. 0 S 12 IS 12I
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DB 22 AR transistor smd MRF6401PHT/D
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