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transistor 2SK3911

Catalog Datasheet MFG & Type PDF Document Tags

transistor 2SK3911

Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII Ï'-MOSVI) 2SK3911 , temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-02 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ , 2SK3911 ID â'" VDS ID â'" VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , ) DRAIN CURRENT ID (A) 3 2005-02-02 2SK3911 IDR â' VDS RDS (ON) â'" Tc 100 COMMON
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transistor 2SK3911 SC-65 2-16C1B

toshiba transistor k3911

Abstract: K3911 TOSHIBA 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current , finish. 2 2006-11-08 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = 25°C Pulse test 6 12 , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS
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toshiba transistor k3911 K3911 TOSHIBA k3911 25VDD

k3911

Abstract: toshiba transistor k3911 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-17 2SK3911 Electrical Characteristics (Ta = 25 , 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , 2005-02-17 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN
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2SK3911 equivalent

toshiba transistor k3911

Abstract: k3911 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2008-12-27 2SK3911 Electrical Characteristics (Ta , indicates Lead(Pb)-Free Finish. 2 2008-12-27 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2008-12-27 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS
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toshiba transistor k3911

Abstract: K3911 TOSHIBA 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic , )-free finish. 2 2006-11-08 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A , 2006-11-08 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN
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transistor K3911

k3911

Abstract: toshiba transistor k3911 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2009-09-29 2SK3911 Electrical Characteristics (Ta = 25 , . 2 2009-09-29 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A) 16 7 6 , 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE
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transistor compatible 2SK3569

Abstract: TK12A65D Main switch 1. Medium- and high-voltage MOSFET (-MOS Series) 2. Switching Power Transistor , for MOS gate driving An NPN transistor and a PNP transistor are housed in a small surface-mount , consumption: 120 A (typ.) Reset on watchdog timeout Reset detection: 4.7 V External transistor required , : 4.2 V External transistor required 6 to 16 TB9000CFNG SSOP20(0.65) CPU voltage regulator , on watchdog timeout Reset detection: 4.7 V External transistor required 6 to 16 TB9001FNG
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TK13A60D transistor compatible 2SK3569 TK12A65D 2SK3569 equivalent tk6a65d equivalent TPCA8019-H TPCA8023-H TLP285/TLP781 TB6818FG/TB6819FG TK15A50D TK60A08J1 SCE0024B

TA1343NG

Abstract: TB1318FG JDH3D01FV (dual) SMQ Dual-gate FET Bipolar transistor 1SV231 S-Mini VHF to UHF Wideband , RF Bipolar transistor UHF USM 2SC4244 SMQ 4 1SS312 , transistor UHF Common collector S-Mini 2SC3547A USM 2SC4250 2SC4245 S-Mini 2SC3123 , Common base S-Mini Bipolar transistor S-Mini 2SC3120 2SC3862 S-Mini 2SC3547A , ) 2SC2712 2SA1162 2SC4116 Transistor 2SA1586 HN1C01F HN1A01F HN1C01FU HN1A01FU 1SS181 1SS184
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TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TA1375FG TA1396FG SSOP24 TA1398FNG LQFP48 TA1395FNG

tk20e60u

Abstract: TPCA*8030 in a variety of packages. Power transistors for MOS gate driving P.28 An NPN transistor and a PNP transistor are housed in a small surface-mount package to provide a fast gate driving capability , High-voltage MOSFET: DTMOS Series -MOSVII Series Switching power transistor SBD of the PFC Controller , , such as a battery. For DC-DC Converters Low-voltage MOSFET: U-MOS Series Switching power transistor
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tk20e60u TPCA*8030 4614 inverter driver tcv7104 TK13A65D 5252 F solar SCE0024C

Toshiba TMPA8873

Abstract: TA1343NG Dual-gate FET Bipolar transistor 3SK225 3SK292 3SK257 3SK207 3SK249 MT3S04A 1SS295 (dual , Package Part Number 2SC4244 SMQ Bipolar transistor Band 1SS312 1SS364 USM RF Amp , Common collector Common base Bipolar transistor UHF Common collector S-Mini 2SC3547A , 2SC4251 2SC4246 2SC3125 2SC3124 2SC3121 USM Common base S-Mini Mixer Bipolar transistor , transistor is mounted on an FR4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm) and is in single-device
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TMPA8891 TMPA8893 tmpa8873 TMPA8857 TMPA8853 tmp*a8873 SCE0001C S-167 SCE0001D

transistor bc 245

Abstract: 247Y Transistors Bipolar Small-Signal Transistors Small-Signal FETs Combination Products of Different Type Devices Bipolar Power Transistors Power MOSFETs Power Transistor Modules Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors IGBTs Phototransistors (for Optical Sensors) 190 205 215 217 232 242 243 246 247 247 248 250 189 Bipolar Small-Signal Transistors General-Purpose
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transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 SC-43 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240

GT30F124

Abstract: GT30J124 ) + small-signal diode Q1 R1 General-purpose NPN transistor VR HN2E02F Independent , diode + NPN RN1303 Q2 R1 VCEO 50 General-purpose NPN transistor HN2E05J
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GT30F124 GT30J124 TPCP8R01 JAPANESE 2SC TRANSISTOR 2010 gt30g124 GT45F122 2010/9SCE0004K 2SA970 2SC5853 2SC5854 2SC6132

GT30J124

Abstract: gt45f122 , R2 = 10 k Q1 2SC4116 VCEO 50 IC 150 General-purpose NPN transistor Q2 RN1303 , General-purpose NPN transistor Q1 2SA1587 VCEO -120 IC -100 High breakdown voltage PNP Q2
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GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2sc5200 amplifiers circuit diagram 2SC5471 SCE0004I