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transistor 2SK3911

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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 , temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-02 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ , 2SK3911 ID – VDS ID – VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , ) DRAIN CURRENT ID (A) 3 2005-02-02 2SK3911 IDR − VDS RDS (ON) – Tc 100 COMMON ... Toshiba
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6 pages,
195.58 Kb

2SK3911 TEXT
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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current , finish. 2 2006-11-08 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = 25°C Pulse test 6 12 , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS ... Toshiba
Original
datasheet

6 pages,
225.88 Kb

transistor 2SK3911 2SK3911 k3911 "k3911" K3911 TOSHIBA toshiba transistor k3911 TEXT
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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-17 2SK3911 Electrical Characteristics (Ta = 25 , 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , 2005-02-17 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN ... Toshiba
Original
datasheet

6 pages,
195.58 Kb

SC-65 "k3911" transistor 2SK3911 K3911 TOSHIBA 2SK3911 equivalent 2SK3911 toshiba transistor k3911 k3911 TEXT
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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2008-12-27 2SK3911 Electrical Characteristics (Ta , indicates Lead(Pb)-Free Finish. 2 2008-12-27 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2008-12-27 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS ... Toshiba
Original
datasheet

6 pages,
187.08 Kb

K3911 TOSHIBA k3911 toshiba transistor k3911 2SK3911 TEXT
datasheet frame
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic , )-free finish. 2 2006-11-08 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A , 2006-11-08 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN ... Toshiba
Original
datasheet

6 pages,
188.67 Kb

SC-65 "k3911" 2SK3911 transistor K3911 K3911 transistor 2SK3911 K3911 TOSHIBA toshiba transistor k3911 TEXT
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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2009-09-29 2SK3911 Electrical Characteristics (Ta = 25 , . 2 2009-09-29 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A) 16 7 6 , 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE ... Toshiba
Original
datasheet

6 pages,
182.32 Kb

transistor K3911 SC-65 "k3911" transistor 2SK3911 K3911 TOSHIBA 2SK3911 2SK3911 equivalent toshiba transistor k3911 k3911 TEXT
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Abstract: Main switch 1. Medium- and high-voltage MOSFET (-MOS Series) 2. Switching Power Transistor , for MOS gate driving An NPN transistor and a PNP transistor are housed in a small surface-mount , consumption: 120 A (typ.) Reset on watchdog timeout Reset detection: 4.7 V External transistor required , : 4.2 V External transistor required 6 to 16 TB9000CFNG TB9000CFNG SSOP20 SSOP20(0.65) CPU voltage regulator , on watchdog timeout Reset detection: 4.7 V External transistor required 6 to 16 TB9001FNG TB9001FNG ... Toshiba
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32 pages,
1303.01 Kb

zener diode reference guide 2SK2996 equivalent toshiba system catalog bipolar 2009 TPC8A03 4614 mosfet TCV7103 2SK3561 equivalent TB6819 TB9001FNG 2sK3567 equivalent p 181 Photocoupler TPCA8030-H TPCA8019-H TB-7005 TPCA8023-H tk6a65d equivalent 2SK3569 equivalent TK12A65D transistor compatible 2SK3569 TEXT
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Abstract: JDH3D01FV JDH3D01FV (dual) SMQ Dual-gate FET Bipolar transistor 1SV231 1SV231 S-Mini VHF to UHF Wideband , RF Bipolar transistor UHF USM 2SC4244 2SC4244 SMQ 4 1SS312 1SS312 , transistor UHF Common collector S-Mini 2SC3547A 2SC3547A USM 2SC4250 2SC4250 2SC4245 2SC4245 S-Mini 2SC3123 2SC3123 , Common base S-Mini Bipolar transistor S-Mini 2SC3120 2SC3120 2SC3862 2SC3862 S-Mini 2SC3547A 2SC3547A , ) 2SC2712 2SC2712 2SA1162 2SA1162 2SC4116 2SC4116 Transistor 2SA1586 2SA1586 HN1C01F HN1C01F HN1A01F HN1A01F HN1C01FU HN1C01FU HN1A01FU HN1A01FU 1SS181 1SS181 1SS184 1SS184 ... Toshiba
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23 pages,
1843.26 Kb

TC90A96 TMPA8851 tmpa8873cpbng TC90A65FG tmp*a8873 TMPA8853 TMPA8857 TMPA88 gt30f122 gt30G122 TMPA8893CXBNG TMPA8891 tmpa8873 TMPA8893 Toshiba TMPA8873 tmpa8859 TC90A96BFG pal 011 A SPEAKER OUTPUT IC TB1318FG TA1343NG TEXT
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Abstract: in a variety of packages. Power transistors for MOS gate driving P.28 An NPN transistor and a PNP transistor are housed in a small surface-mount package to provide a fast gate driving capability , High-voltage MOSFET: DTMOS Series -MOSVII Series Switching power transistor SBD of the PFC Controller , , such as a battery. For DC-DC Converters Low-voltage MOSFET: U-MOS Series Switching power transistor ... Toshiba
Original
datasheet

32 pages,
1087.86 Kb

2SK3562 equivalent 2sK3567 equivalent TCV7106 solar inverters circuit diagram 2SK3569 equivalent TB6819 TB7106f 2SK3561 equivalent mosfet sot353 TC7750FTG 5252 solar cell chip TB6830WBG 4614 mosfet 5252 F solar tcv7104 4614 inverter driver TK13A65D tk20e60u TEXT
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Abstract: Dual-gate FET Bipolar transistor 3SK225 3SK225 3SK292 3SK292 3SK257 3SK257 3SK207 3SK207 3SK249 3SK249 MT3S04A MT3S04A 1SS295 1SS295 (dual , Package Part Number 2SC4244 2SC4244 SMQ Bipolar transistor Band 1SS312 1SS312 1SS364 1SS364 USM RF Amp , Common collector Common base Bipolar transistor UHF Common collector S-Mini 2SC3547A 2SC3547A , 2SC4251 2SC4251 2SC4246 2SC4246 2SC3125 2SC3125 2SC3124 2SC3124 2SC3121 2SC3121 USM Common base S-Mini Mixer Bipolar transistor , transistor is mounted on an FR4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm) and is in single-device ... Toshiba
Original
datasheet

23 pages,
1513.98 Kb

TMPA8893CXBNG TMPA8857* CIRCUIT DIAGRAM TMPA8879 TMPA8851 tb1307fg gt30G122 samsung plasma tv circuit diagram same IC with TA1343NG tmp*a8873 TMPA8857 TMPA8853 TB1318FG TC90A96BFG tmpa8859 TMPA8891 tmpa8873 TMPA8893 TA1343NG Toshiba TMPA8873 TEXT
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