500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2
1N5349B Microsemi Corporation Zener Diode, 12V V(Z), 5%, 5W, Silicon, Unidirectional, PLASTIC, T-18, 2 PIN
EX128-PTQG64I Microsemi Corporation Field Programmable Gate Array, 357MHz, CMOS, PQFP64, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TQFP-64

transistor 2SK3911

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII Ï'-MOSVI) 2SK3911 , temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-02 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ , 2SK3911 ID â'" VDS ID â'" VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , ) DRAIN CURRENT ID (A) 3 2005-02-02 2SK3911 IDR â' VDS RDS (ON) â'" Tc 100 COMMON Toshiba
Original
SC-65 2-16C1B
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current , finish. 2 2006-11-08 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = 25°C Pulse test 6 12 , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS Toshiba
Original
toshiba transistor k3911 K3911 TOSHIBA k3911 25VDD
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-17 2SK3911 Electrical Characteristics (Ta = 25 , 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , 2005-02-17 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN Toshiba
Original
2SK3911 equivalent
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2008-12-27 2SK3911 Electrical Characteristics (Ta , indicates Lead(Pb)-Free Finish. 2 2008-12-27 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2008-12-27 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS Toshiba
Original
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic , )-free finish. 2 2006-11-08 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A , 2006-11-08 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN Toshiba
Original
transistor K3911
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2009-09-29 2SK3911 Electrical Characteristics (Ta = 25 , . 2 2009-09-29 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A) 16 7 6 , 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE Toshiba
Original
Abstract: Main switch 1. Medium- and high-voltage MOSFET (-MOS Series) 2. Switching Power Transistor , for MOS gate driving An NPN transistor and a PNP transistor are housed in a small surface-mount , consumption: 120 A (typ.) Reset on watchdog timeout Reset detection: 4.7 V External transistor required , : 4.2 V External transistor required 6 to 16 TB9000CFNG SSOP20(0.65) CPU voltage regulator , on watchdog timeout Reset detection: 4.7 V External transistor required 6 to 16 TB9001FNG Toshiba
Original
TK13A60D transistor compatible 2SK3569 TK12A65D 2SK3569 equivalent tk6a65d equivalent TPCA8023-H TB-7005 TLP285/TLP781 TB6818FG/TB6819FG TK15A50D TK60A08J1 SCE0024B
Abstract: JDH3D01FV (dual) SMQ Dual-gate FET Bipolar transistor 1SV231 S-Mini VHF to UHF Wideband , RF Bipolar transistor UHF USM 2SC4244 SMQ 4 1SS312 , transistor UHF Common collector S-Mini 2SC3547A USM 2SC4250 2SC4245 S-Mini 2SC3123 , Common base S-Mini Bipolar transistor S-Mini 2SC3120 2SC3862 S-Mini 2SC3547A , ) 2SC2712 2SA1162 2SC4116 Transistor 2SA1586 HN1C01F HN1A01F HN1C01FU HN1A01FU 1SS181 1SS184 Toshiba
Original
TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TA1375FG TA1396FG SSOP24 TA1398FNG LQFP48 TA1395FNG
Abstract: in a variety of packages. Power transistors for MOS gate driving P.28 An NPN transistor and a PNP transistor are housed in a small surface-mount package to provide a fast gate driving capability , High-voltage MOSFET: DTMOS Series -MOSVII Series Switching power transistor SBD of the PFC Controller , , such as a battery. For DC-DC Converters Low-voltage MOSFET: U-MOS Series Switching power transistor Toshiba
Original
tk20e60u TPCA*8030 tcv7104 5252 F solar 4614 inverter driver TK13A65D SCE0024C
Abstract: Dual-gate FET Bipolar transistor 3SK225 3SK292 3SK257 3SK207 3SK249 MT3S04A 1SS295 (dual , Package Part Number 2SC4244 SMQ Bipolar transistor Band 1SS312 1SS364 USM RF Amp , Common collector Common base Bipolar transistor UHF Common collector S-Mini 2SC3547A , 2SC4251 2SC4246 2SC3125 2SC3124 2SC3121 USM Common base S-Mini Mixer Bipolar transistor , transistor is mounted on an FR4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm) and is in single-device Toshiba
Original
TMPA8891 TMPA8893 tmpa8873 TMPA8857 TMPA8853 tmp*a8873 SCE0001C S-167 SCE0001D
Abstract: Transistors Bipolar Small-Signal Transistors Small-Signal FETs Combination Products of Different Type Devices Bipolar Power Transistors Power MOSFETs Power Transistor Modules Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors IGBTs Phototransistors (for Optical Sensors) 190 205 215 217 232 242 243 246 247 247 248 250 189 Bipolar Small-Signal Transistors General-Purpose -
Original
transistor bc 245 247Y smd transistor h2a gt30g122 GT45F123 MARKING SMD PNP TRANSISTOR h2a SC-43 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240
Abstract: ) + small-signal diode Q1 R1 General-purpose NPN transistor VR HN2E02F Independent , diode + NPN RN1303 Q2 R1 VCEO 50 General-purpose NPN transistor HN2E05J Toshiba
Original
GT30F124 GT30J124 TPCP8R01 JAPANESE 2SC TRANSISTOR 2010 GT45F122 gt30g124 2010/9SCE0004K 2SA970 2SC5853 2SC5854 2SC6132
Abstract: , R2 = 10 k Q1 2SC4116 VCEO 50 IC 150 General-purpose NPN transistor Q2 RN1303 , General-purpose NPN transistor Q1 2SA1587 VCEO -120 IC -100 High breakdown voltage PNP Q2 Toshiba
Original
GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2sc5200 amplifiers circuit diagram 2SC5471 SCE0004I