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transistor 2SK3911

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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic , )-free finish. 2 2006-11-08 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A , 2006-11-08 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN ... Original
datasheet

6 pages,
188.67 Kb

SC-65 transistor K3911 2SK3911 transistor 2SK3911 K3911 K3911 TOSHIBA toshiba transistor k3911 2SK3911 abstract
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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-17 2SK3911 Electrical Characteristics (Ta = 25°C , 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , 2005-02-17 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN ... Original
datasheet

6 pages,
195.58 Kb

SC-65 transistor 2SK3911 K3911 TOSHIBA 2SK3911 equivalent 2SK3911 toshiba transistor k3911 k3911 2SK3911 abstract
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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2008-12-27 2SK3911 Electrical Characteristics (Ta , indicates Lead(Pb)-Free Finish. 2 2008-12-27 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2008-12-27 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS ... Original
datasheet

6 pages,
187.08 Kb

K3911 TOSHIBA k3911 toshiba transistor k3911 2SK3911 2SK3911 abstract
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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current , finish. 2 2006-11-08 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = 25°C Pulse test 6 12 50 , (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS 100 ... Original
datasheet

6 pages,
225.88 Kb

transistor 2SK3911 k3911 2SK3911 K3911 TOSHIBA toshiba transistor k3911 2SK3911 abstract
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Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2009-09-29 2SK3911 Electrical Characteristics (Ta = 25°C , equipment. 2 2009-09-29 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A) 16 7 , ) 3 2009-09-29 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE ... Original
datasheet

6 pages,
182.32 Kb

SC-65 K3911 TOSHIBA transistor 2SK3911 2SK3911 2SK3911 equivalent toshiba transistor k3911 k3911 2SK3911 abstract
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Abstract: Main switch 1. Medium- and high-voltage MOSFET (-MOS Series) 2. Switching Power Transistor , for MOS gate driving An NPN transistor and a PNP transistor are housed in a small surface-mount , watchdog timeout Reset detection: 4.7 V External transistor required 6 to 16 TB9000AFG TB9000AFG SSOP16 SSOP16 , consumption: 120 A (typ.) Reset on watchdog timeout Reset detection: 4.2 V External transistor required , detection: 4.7 V External transistor required 6 to 16 TB9001FNG TB9001FNG SSOP20 SSOP20(0.65) CPU voltage ... Original
datasheet

32 pages,
1303.01 Kb

zener diode reference guide 2SK2996 equivalent Toshiba Europe DTMOS IV toshiba system catalog bipolar 2009 TPC8A03 tk10a60d equivalent TCV7103 2SK3561 equivalent TB9001FNG TB6819 2sK3567 equivalent TPCA8030-H datasheet abstract
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Abstract: JDH3D01FV JDH3D01FV (dual) SMQ Dual-gate FET Bipolar transistor 1SV231 1SV231 S-Mini VHF to UHF Wideband , RF Bipolar transistor UHF USM 2SC4244 2SC4244 SMQ 4 1SS312 1SS312 , transistor UHF Common collector S-Mini 2SC3547A 2SC3547A USM 2SC4250 2SC4250 2SC4245 2SC4245 S-Mini 2SC3123 2SC3123 , Common base S-Mini Bipolar transistor S-Mini 2SC3120 2SC3120 2SC3862 2SC3862 S-Mini 2SC3547A 2SC3547A , ) 2SC2712 2SC2712 2SA1162 2SA1162 2SC4116 2SC4116 Transistor 2SA1586 2SA1586 HN1C01F HN1C01F HN1A01F HN1A01F HN1C01FU HN1C01FU HN1A01FU HN1A01FU 1SS181 1SS181 1SS184 1SS184 ... Original
datasheet

23 pages,
1843.26 Kb

tmpa8873cpbng TC90A96 TMPA8851 TC90A65FG TMPA88 TMPA8853 TMPA8857 tmp*a8873 gt30G122 gt30f122 TMPA8893CXBNG TMPA8891 Toshiba TMPA8873 TMPA8893 datasheet abstract
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Abstract: in a variety of packages. Power transistors for MOS gate driving P.28 An NPN transistor and a PNP transistor are housed in a small surface-mount package to provide a fast gate driving capability , High-voltage MOSFET: DTMOS Series -MOSVII Series Switching power transistor SBD of the PFC Controller , , such as a battery. For DC-DC Converters Low-voltage MOSFET: U-MOS Series Switching power transistor ... Original
datasheet

32 pages,
1087.86 Kb

TPCA8030-H TPC8A03 TCV7106 2sK3567 equivalent TK12A65D TB7106f 2SK3561 equivalent mosfet sot353 TB6819 5252 solar cell chip TB6830WBG TC7750FTG 4614 mosfet 5252 F solar datasheet abstract
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Abstract: Dual-gate FET Bipolar transistor 3SK225 3SK225 3SK292 3SK292 3SK257 3SK257 3SK207 3SK207 3SK249 3SK249 MT3S04A MT3S04A 1SS295 1SS295 (dual , Package Part Number 2SC4244 2SC4244 SMQ Bipolar transistor Band 1SS312 1SS312 1SS364 1SS364 USM RF Amp , Common collector Common base Bipolar transistor UHF Common collector S-Mini 2SC3547A 2SC3547A , 2SC4251 2SC4251 2SC4246 2SC4246 2SC3125 2SC3125 2SC3124 2SC3124 2SC3121 2SC3121 USM Common base S-Mini Mixer Bipolar transistor , applies when the transistor is mounted on an FR4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm) and is ... Original
datasheet

23 pages,
1513.98 Kb

gt30f122 TMPA8893CXBNG tb1307fg TMPA8857* CIRCUIT DIAGRAM samsung plasma tv circuit diagram TMPA8879 gt30G122 TMPA8857 tmp*a8873 TMPA8853 same IC with TA1343NG TMPA8891 TB1318FG datasheet abstract
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Abstract: Transistors Bipolar Small-Signal Transistors Small-Signal FETs Combination Products of Different Type Devices Bipolar Power Transistors Power MOSFETs Power Transistor Modules Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors IGBTs Phototransistors (for Optical Sensors) 190 205 215 217 232 242 243 246 247 247 248 250 189 Bipolar Small-Signal Transistors General-Purpose ... Original
datasheet

60 pages,
940.28 Kb

2SK369 equivalent transistor 2SC5066 ICP biased electret microphone GT20J321 MARKING SMD PNP TRANSISTOR Wf GT45f122 Series transistor a1241 datasheet transistor bc 207 npn MARKING SMD PNP TRANSISTOR h2a smd transistor h2a transistor bc 245 datasheet abstract
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