500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
2N3810L Microsemi Corporation Transistor visit Digikey
2N2904AL Microsemi Corporation Transistor visit Digikey
2N3499L Microsemi Corporation Transistor visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey
SRF4427G Microsemi Corporation Transistor visit Digikey
2N2907AUA Microsemi Corporation Transistor visit Digikey

transistor 2SK3911

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII Ï'-MOSVI) 2SK3911 , temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-02 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ , 2SK3911 ID â'" VDS ID â'" VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , ) DRAIN CURRENT ID (A) 3 2005-02-02 2SK3911 IDR â' VDS RDS (ON) â'" Tc 100 COMMON Toshiba
Original
SC-65 2-16C1B
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current , finish. 2 2006-11-08 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = 25°C Pulse test 6 12 , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2006-11-08 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS Toshiba
Original
toshiba transistor k3911 K3911 TOSHIBA k3911 25VDD
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-02-17 2SK3911 Electrical Characteristics (Ta = 25 , 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 7 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID 16 , 2005-02-17 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN Toshiba
Original
2SK3911 equivalent
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-08 2SK3911 Electrical Characteristics (Ta = 25°C) Characteristic , )-free finish. 2 2006-11-08 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A , 2006-11-08 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN Toshiba
Original
transistor K3911
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2008-12-27 2SK3911 Electrical Characteristics (Ta , indicates Lead(Pb)-Free Finish. 2 2008-12-27 2SK3911 ID ­ VDS 20 10 8 6.5 COMMON SOURCE Tc = , CURRENT ID (A) DRAIN CURRENT ID (A) 3 2008-12-27 2SK3911 RDS (ON) ­ Tc 1000 IDR - VDS Toshiba
Original
Abstract: 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 , Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2009-09-29 2SK3911 Electrical Characteristics (Ta = 25 , . 2 2009-09-29 2SK3911 ID ­ VDS ID ­ VDS 20 6.5 DRAIN CURRENT ID (A) 16 7 6 , 2SK3911 IDR - VDS RDS (ON) ­ Tc 100 COMMON SOURCE VGS = 10 V PULSE TEST DRAIN REVERSE Toshiba
Original
Abstract: Main switch 1. Medium- and high-voltage MOSFET (-MOS Series) 2. Switching Power Transistor , for MOS gate driving An NPN transistor and a PNP transistor are housed in a small surface-mount , consumption: 120 A (typ.) Reset on watchdog timeout Reset detection: 4.7 V External transistor required , : 4.2 V External transistor required 6 to 16 TB9000CFNG SSOP20(0.65) CPU voltage regulator , on watchdog timeout Reset detection: 4.7 V External transistor required 6 to 16 TB9001FNG Toshiba
Original
TK13A60D transistor compatible 2SK3569 TK12A65D 2SK3569 equivalent tk6a65d equivalent TPCA8023-H TB-7005 TLP285/TLP781 TB6818FG/TB6819FG TK15A50D TK60A08J1 SCE0024B
Abstract: JDH3D01FV (dual) SMQ Dual-gate FET Bipolar transistor 1SV231 S-Mini VHF to UHF Wideband , RF Bipolar transistor UHF USM 2SC4244 SMQ 4 1SS312 , transistor UHF Common collector S-Mini 2SC3547A USM 2SC4250 2SC4245 S-Mini 2SC3123 , Common base S-Mini Bipolar transistor S-Mini 2SC3120 2SC3862 S-Mini 2SC3547A , ) 2SC2712 2SA1162 2SC4116 Transistor 2SA1586 HN1C01F HN1A01F HN1C01FU HN1A01FU 1SS181 1SS184 Toshiba
Original
TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TA1375FG TA1396FG SSOP24 TA1398FNG LQFP48 TA1395FNG
Abstract: in a variety of packages. Power transistors for MOS gate driving P.28 An NPN transistor and a PNP transistor are housed in a small surface-mount package to provide a fast gate driving capability , High-voltage MOSFET: DTMOS Series -MOSVII Series Switching power transistor SBD of the PFC Controller , , such as a battery. For DC-DC Converters Low-voltage MOSFET: U-MOS Series Switching power transistor Toshiba
Original
tk20e60u TPCA*8030 tcv7104 5252 F solar TK13A65D 4614 inverter driver SCE0024C
Abstract: Dual-gate FET Bipolar transistor 3SK225 3SK292 3SK257 3SK207 3SK249 MT3S04A 1SS295 (dual , Package Part Number 2SC4244 SMQ Bipolar transistor Band 1SS312 1SS364 USM RF Amp , Common collector Common base Bipolar transistor UHF Common collector S-Mini 2SC3547A , 2SC4251 2SC4246 2SC3125 2SC3124 2SC3121 USM Common base S-Mini Mixer Bipolar transistor , transistor is mounted on an FR4 board (Cu area = 645 mm2, glass-epoxy, t = 1.6 mm) and is in single-device Toshiba
Original
TMPA8891 TMPA8893 tmpa8873 TMPA8857 TMPA8853 tmp*a8873 SCE0001C S-167 SCE0001D
Abstract: Transistors Bipolar Small-Signal Transistors Small-Signal FETs Combination Products of Different Type Devices Bipolar Power Transistors Power MOSFETs Power Transistor Modules Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors IGBTs Phototransistors (for Optical Sensors) 190 205 215 217 232 242 243 246 247 247 248 250 189 Bipolar Small-Signal Transistors General-Purpose -
Original
transistor bc 245 247Y smd transistor h2a gt30g122 GT45F123 MARKING SMD PNP TRANSISTOR h2a SC-43 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240
Abstract: ) + small-signal diode Q1 R1 General-purpose NPN transistor VR HN2E02F Independent , diode + NPN RN1303 Q2 R1 VCEO 50 General-purpose NPN transistor HN2E05J Toshiba
Original
GT30F124 GT30J124 TPCP8R01 JAPANESE 2SC TRANSISTOR 2010 GT45F122 gt30g124 2010/9SCE0004K 2SA970 2SC5853 2SC5854 2SC6132
Abstract: , R2 = 10 k Q1 2SC4116 VCEO 50 IC 150 General-purpose NPN transistor Q2 RN1303 , General-purpose NPN transistor Q1 2SA1587 VCEO -120 IC -100 High breakdown voltage PNP Q2 Toshiba
Original
GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2sc5200 amplifiers circuit diagram 2SC5471 SCE0004I