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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor 2SB 367

Catalog Datasheet MFG & Type PDF Document Tags

ksd 302 250v, 10a

Abstract: irf 5630 .transistor 1" contains more than 19000 different transistors and FETâ'™s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end Final stages FET Field-effect transistor FET-depl. Field-effect transistor, depletion type Field-effect
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transistor 2SB 367

Abstract: Power Transistors SIT b ÿ > ' y X £ /Transistors 2SD2211 NPN 2SD2211/2SD1918F5 b ? > y Z $ E C 2 5 U l 9 1 O r 5 Epitaxial Planar NPN Silicon Transistor iSJiîS^^JiSififfl/Low Freq. Power Amp. * W f i ri'ÜEI/'Dim ensions (Unit : mm) 1) i o i i l l i J £ T '^ 5 o B V ce O = 160V 2) S O A P 'f c ^ 'o 3) fT A 'S , plementary pair with 2SB 1275. 7 V 7s $ 1 2 S D 9 < Zf · 85Î Î Â ^ 5ËÎ&/'Absolute Maximum , 2 150 -55- 150 *2 40X40X0.7mm-tr-7 4 - v ? * t S f ë f f l# ROHm 367 3 68 POWER
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transistor 2SB 367 Power Transistors SIT sit transistor 2SD1918

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SA1281 EINLEITUNG Das Ihnen vorliegende Daten- und Vergleichsbuch .transistor 2â' beinhaltet m ehrals 19000 , '" INTRODUCTION This comparative data book .transistor 2â' contains more than 19000 different transistors and , than one transistor with different polarities in one case pnp PNP structure p-ch P channel type (FET , television appliction CTV Chopper chop Darlington transistor Dari Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual Final stages end FET Field-effect
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Transistor 2SA 2SB 2SC 2SD 2SA1281 2SK596 bup 3130 C3885A 2SC906 PA63H MPA68H BD241

3866S

Abstract: transistor a999 114,127 110,121 110,119 114,123 114,123 2SB 621/A 2SB 642 2SB 643 2SB 644 2SB7Ö9A 2SB 710/A 2SB 726 2SB 745/A 2 S 8 7 6 6 /A 2SB 767 2SB 774 2SB 779 2SB 788 2SB 789/A 2SB 790 2SB 792/A 2SB 819 2SB 873 2SB 928/A 2SB 929/A 2SB 930/A 2SB931 2SB 932 2SB933 2SB 934 2SB 935/A 2SB 936/A 2SB 937/A © 2 SB 938/A 2SB 939/A 2SB 940/A 2SB 941/A 2SB 942/A 2SB 943 2SB 944 2SB 945 2SB 946 2SB 947/A 2SB 948/A 2SB 949/A , 26 NS NS M T0220F TO P 3F T0220F N T0220F Mini Power 3 T0220F i TO P 3F TO P 3F TO P 3F 2SB 950/A
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3866S transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor a1535A 1020G N12861 N12B62 MN1381 MN13811 MN13821

2SB415

Abstract: 2SB 710 â' 364 - 2 S A 103 2SC710 365 " 2SA103 2SC710 366 " 367 â , 2SB560 - 2S 509 B 2SB507 2SB524 2SB 527 2SB526 2SB526 2SB 719 2SA510 2SA510 2SA512 2SB 504A 2SB504 2SB504 r 2SB596 2SA76 1 2SA76 1 2SA76 1 2SA 546 2SA546A 2SA546A 2SA498 M 483 2SA985 2SA985 i m p° p 488 M 490 2SB 512 at « tS « n , « B T L HITACHI NEC 2SA708A 2SA537A® 2SB 548 2SA715 m z t A FUJITSU 2SA580
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2SB415 2SB 710 2sc1061 HD68P01 2sd524 2SB502 4000H

AC125K

Abstract: 6AN7 O L TA G E , PNP TRANSISTOR HIGH FREQ UENCY, PNP TRANSISTO R HIGH V O L TA G E , PNP TRANSISTOR A F & SW, PNP TRANSISTOR HIG H V O LTA G E , PNP TRANSISTOR HIGH G AIN , PNP TRANSISTO R HIG H V O LTA G E , PNP TRANSISTOR HIGH V O LTA G E , PNP TRANSISTO R HIG H SPEEÇ SWITCHING, PNP TRANSISTO R HIG H , IO FREQ UENCY. PNP TRANSISTO R AU D IO FREQ UENCY, PNP TRANSISTOR A U D IO FREQ UENCY, PNP TRANSISTO , TRANSISTO R A U D IO FREQ UENCY, PNP TRANSISTOR A U D IO FREQ UENCY, PNP TRANSISTO R A U D IO FREQ UENCY
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A741PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram 72741N 72747N 72748N 7B131N 76149N 1709C

2sk520

Abstract: 3sk131 cross . â'¢ Be certain to check the transistor bias when replacing devices in high power audio stages , -401 80 7 200 40 1 ty p . IN D -7 5 7 30 PHOTO TRANSISTOR OPTO-ISOLATOR (LED DEVICE
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1S2835 2sk520 3sk131 cross 2S880 3SK133A 2SK739 TRANSISTOR AF 416 pnp 1S2836 1S2837 1S2838 1SS123 1SS153

2n7588

Abstract: BC233A · Part No. /T ra n s is to rs (2SA/2SB/2SC/2SD) A p p lica tio n V c e o (V| -3 2 -5 0 -4 0 L , 361 364 367 RF SW 25 6 400 0.05 0.05 2 5 0.15 0.2 35 600 800 10 0.95 2 7 -1 8 0 10 5 5 10 5 1000 UMT , TA114YKA D TA114YU A D TA115EE D TA115EKA D TA115EU A Transistor Switch D TA123EE D TA123EKA D TA123EU A D , K A D TA144W U A DTA1D3R E D TA 1D 3R KA Transistor Switch DTA1 D3R U A D TC 113ZE D TC 113ZK A D TC , TC 124XU A D TC 143EE D TC 143EKA D TC 143EU A D TC 143XE D TC 143XKA Transistor Switch D TC 143XU A
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2n7588 BC233A P3139 sprague 40d GEX36/7 Transistor B641

2SD 647 transistor

Abstract: TA143E J J field-effect transistor ^ m J transistor l MOS field-effect transistor / Type num ber , * A raw material germanium B raw material silicon second letter C transistor for applications in AF range (Rlh >15° C/W) JC D power transistor for applications in AF range (FtlhJC 15° C/W) < F RF transistor (Rth > 15° C/W) JC L RF power transistor (Rlh 15° C/W) JC U power transistor for switching applications (Rlh < 15° C/W) JC * The
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MDA01 2SD 647 transistor TA143E TRANSISTOR 2SC 733 C4672 144EK 114EU 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103

germanium

Abstract: KPL 3009 in high power audio stages should always be accompanied by a check on the transistor bias to , silicone grease to both sides of the washer to insure maximum thermal efficiency. To extend transistor , variety of transistor heat sinks, insulator kits, and heat sink compound for this purpose. 1 ECG , TO-66 Fig. 9 ECG131 ECG 131MP â'˜ Transistor Outlinesâ'"Page 6 3 ECG SEMICONDUCTOR , Switch 4000 Typical 25 10 Ig 25 Transistor Outlinesâ'"Page 6 D ra in S o u rc e V o
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germanium KPL 3009 BLY34 AF339 ADY20 2sb510 C9/C10

st178

Abstract: diode E1110 The ARCHER TRANSISTOR SUBSTITUTION GUIDE and cross-reference listing has been prepared by the , to 20,000 commercial transistor types. Radio Shack takes great pride in offering top-quality devices , original use, refer to the section ARCHER TRANSISTOR SPECI­ FICATIONS. You will find the important , dropping, etc.). When cutting transistor leads, use scissor-type cutting tools (rather than diagonal , good practice to use a heat-sink tool on a transistor lead when soldering (use a low-wattage ironâ
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st178 diode E1110 CK705 CS1237 ecg semiconductor replacement guide TE1088 ECG303 8M-26102 66X0003-001 68X0003-001 CX-9000 T-E0317

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free SEMICON INDEXES volume: i INTERNATIONAL TRANSISTOR INDEX 23nd EDITION 1997/8 â \ 1 .5 â , .* CAR CARTER TRANSISTOR CORP. CRT CENTRAL SEMICONDUCTOR CORPORATION CEN CENTRONIC Ltd. CET CERLED ELS CHINA SEMICONDUCTOR CORP. CSC CLAI REX ELECTRONICS CLX CLEVITE TRANSISTOR PRODUCTS* ITT COLLMER SEMICONDUCTOR INC. COL COMMUNICATIONS TRANSISTOR CORP.* CTC COMPAGNIE DE LAMPS* CDL COMPAGNIE INDUSTRIELLE , DIODE TRANSISTOR INC. DIT DIODES INC. Dll DIOTEC ELECTRONICS CORP. DIO DIOTEC ELEKTRONISCHE
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LS 2027 audio amp ECG transistor replacement guide book free 2sb337 980510 TRANSISTOR REPLACEMENT GUIDE 2N339

IGBT M16 100-44

Abstract: Kt606 audio pre-amps 1 Transistor Application Slide Rule Features. Find a replacement every time , technician. Assures fast, accurate selec­ tion of the right transistor for your applicatioa Provides a , R E C T IF IE R I« R TRANSISTOR SPECIFICATIONS PART DESCRIPTION CASE NO. TYPE , lifie r High Voltage Silicon Power Transistor Small Signal, Low Noise A m p lifie r Medium Current , A udio A m p lifie r & High Frequency Switching Transistor High Voltage A udio Germanium Power
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IGBT M16 100-44 Kt606 transistor 8BB smd Transistor B0243C ASEA HAFO AB SEMICON INDEXES VV276

T35W

Abstract: transistor kt 606A IC IA N S O VE R SE A S: KBrhS^jH&KS (New Transistor Manual) lists all the transistors registered
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T35W transistor kt 606A sr 6863 D CS9011 2SC965 AH3505 10DB2P 10DB4P 10DB6P D200MP IRTR-51 991991T1

2sb504

Abstract: 2sc497 2SK330 2SK 208 2SK 367 2SK 368 â'" 2SK 362 2SK 365 2SK209 2SK880 2SK 364 , 2SK 389 2SJ109 â'" - 2SK389 2SJ109 13 320/270 BUILT IN RESISTOR TRANSISTOR , * 3 * 1 * 4 * 3 PN P NPN 14 * 5 * 2 TRANSISTOR/FET FOR TV TUNER Package , 2SC3124 OSC Bipolar 2SC4251 2SC4255 2SC4252 2SC2349 15 TRANSISTOR/FET FOR A M /F M , 2SC2712 Bipolar 16 2SC4116 TRANSISTOR FOR VHF/UHF Package TO-92 (SC-43) Super-Mini (SOT
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2sc497 2N5983 2t306 2sd73 2SD588 S029747 SS963

70H40

Abstract: 2SC734 equivalent INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE = = black violet white brown orange gn gr r ye bl = ,
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70H40 2SC734 equivalent 3sk73 equivalent transistor equivalent d2012 2sc2075 equivalent 2sa970 BL equivalent 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459

sx3704

Abstract: AP239 (resistors, coils, etc.) that might have been damaged if the original transistor was shorted. In most auto radio output stages, check emitter resistor (replacement transistor will be permanently damaged if this , positive, the transistor is NPN, if the voltage reading is negative, the transistor is PNP. 2. Germanium , , the transistor is germanium. If the voltage is approximately 0.6 volt, the transistor is silicon. 3
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sx3704 AP239 8C547 Transistor 80139 2N50B 6C131C

triac zd 607

Abstract: hep c6004 3e 2â'¢ 2N383.2 N20 00. 2N2 17 1 2N 60 C. 2 N6 1C .2 G57 7. 2SB 218 2N 59 .2N 59A .2 N59 B. 2N6 0A.2 , 3.2N2 00 0 . 2 N 2 171 2N 59 C. 2N 61C .2 G57 7. 2SB 218 2N 59 .2N 59A .2 N59 6. 2N6 0.2N 60A .2 N6 0B , 60C .2 G57 7. 2SB 218 2N 10 4. 2 N1 09 . 2N 111 .2N 111A .2 N1 12 .2 N1 12 A. 2N 11 3. 2N1 14 .2N 13 , .2N425.2N426.2N427 2N 39 4A , 2N 39 5 »2 N3 9 6,2 N396 A, 2N 41 3. 2N 41 4, 2N 41 4B . 2N 414 C.2 N4 16. 2N41 7 2SB , 31 3. 2 N 2 1 7 1 2NA 3.2 NA 3 A. 2N A 4. 2N 1 1O .2 N3 2 7 A . 2 N 3 2 0 A . 2 N 3 2 9 A 2N 367 .2N
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triac zd 607 hep c6004 motorola c6004 2SC 968 NPN Transistor sje 607 zs70 ZY12A Z0215 ZT280 ZT2369 ZT2369A ZY12B
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