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2N5109 Microsemi Corporation 2N5109 visit Digikey
2N5109 Central Semiconductor Corp RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, HERMETIC SEALED PACKAGE-3 visit Digikey
2N5109 LEAD FREE Central Semiconductor Corp TRANS RF NPN 20V 400MA TO-39 visit Digikey
2N3019S Microsemi Corporation Transistor visit Digikey
2N2906AUB Microsemi Corporation Transistor visit Digikey
2N2221AUB Microsemi Corporation Transistor visit Digikey

transistor 2N5109

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N5109 SILICON NPN RF TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically , Corp. 2N5109 NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3 , 1.14 TO-39 (REV: R1) R3 (23-June 2005) PROCESS Small Signal Transistor NPN - Silicon RF Transistor Chip CP214 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Central Semiconductor
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2n5109 transistor chip die npn transistor NPN transistor marking NY transistor marking code AL VCE-15V 200MH
Abstract: File No. 281 Solid State Division RF Power Transistors 2N5109 Silicon N-P-N Overlay Transistor High Gain for Line Amplifiers in CATV and MATV Equipment Features: â  High gain-bandwidth product â  Large dynamic range â  Low distortion â  Low noise RCA-2N5109* is an epitaxial silicon n-p-n planar transistor employing "overlay" emitter electrode construction. It is especially designed to , high gain-bandwidth product over a wide range of collector current makes the 2N5109 ideally suited for -
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RCA-2N5109 TA2800 rca 2N5109 2n5109 rca CF-102-Q1 2NS109-
Abstract: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base , REVERSE SIDE) R1 2N5109 NPN SILICON RF TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B D C Central Semiconductor
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Abstract: 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM , =15V, IC=10mA, f=200MHz VCE=15V, IC=50mA, f=200MHz 40 40 20 R4 (7-June 2011) 2N5109 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL Central Semiconductor
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Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. http://store.americanmicrosemiconductor.com/2n5109.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N5109 2N5109 RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2 , : Americanmicrosemi 2N5109 $ 2.24 Information Spec Sheets Tutorials Shipping FAQs $ 1.79 $ 0.45 Total Price American Microsemiconductor
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Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · 1.2 GHz Current-Gain Bandwidth Product @ 50mA · 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: Silicon NPN transistor , (1) Derate above 25ºC Note 1. Total Device dissipation at TA = 25ºC is 1 Watt. 2N5109.PDF 3-10-99 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions Microsemi
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for transistor bfr96 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MRF951 MRF571 BFR91 BFR90 MRF545 MRF544
Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · 1.2 GHz Current-Gain Bandwidth Product @ 50mA · 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: Silicon NPN transistor , 10-25-99 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions , 1200 - MHz 2N5109 FUNCTIONAL Symbol Test Conditions Value Min. G U max MAG Microsemi
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MSC1304 MRF559 2N4427 MRF4427 RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 RF NPN POWER TRANSISTOR 2.5 GHZ UHF power TRANSISTOR PNP TO-39 MRF5812 2N3866A MRF904 MRF5943C
Abstract: |L i O r a ( ô ) [ M D O i Y T ^ s - thom son 2N5109 EPITAXIAL PLANAR NPN C A T V U L T R A -L IN E A R HIGH G AIN T R A N SISTO R The 2N5109 is a multi-emitter silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is desi gned for CATV-MATV amplifier applications over a wide , V A A W W °C 1/3 407 VcEO V ebo lc Ib Plot Tstg. Tj October 1988 2N5109 S G S -T H , Current Gain. 0Q 31227 3 2N5109 T-31-23 Power Gain vs. Collector Current. f =200MHz V ,= 1 5 -
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2N5109 SGS Max17550 transistor Z2 312E5
Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor , dissipation at TA = 25ºC is 1 Watt. 053-7004 Rev - 9-2002 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25 , 2N5109 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Available Gain Advanced Power Technology
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RF NPN POWER TRANSISTOR 1000 WATT TRANSISTOR 12 GHZ MRF555T MRF8372 MRF557 MRF557T
Abstract: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER TO , 0.5 150 MHz 3.5 3.0 11 pF dB dB R3 (23-June 2005) Central TM 2N5109 Semiconductor Corp. NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE Central Semiconductor
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Abstract: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base , (Continued) R2 2N5109 NPN SILICON RF TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B D C E Central Semiconductor
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Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · 1.2 GHz Current-Gain Bandwidth Product @ 50mA · 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver , factory direct. 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO(sus Advanced Power Technology
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MRF553 MRF607 2N6255 2N5179 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ macro x power transistor MRF581A MRF555 MRF553T
Abstract: 30E D â  7TET237 0031225 T T' SCS-THOMSON OOMmLUOTI^ÃlMDÃl_2N5109 Y G S-THOMSON EPITAXIAL PLANAR NPN CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR The 2N5109 is a multi-emitter silicon planar epitaxial N PN transistor in Jedec TO-39 metal case. It is designed for CATV-MATV amplifier applications , 1988_-j/3 407 2N5109_ S G S-thomson_ 3QE » H 7WZ37 0Q3122b 1 â  T-31-23 THERMAL , Transfer Coefficient Si2e. 30" T-37-23 Power Gain vs. Collector Current. 2N5109 f =200MHz V,p -
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multi-emitter transistor P15V 0Q3122 2TS37
Abstract: Data Sheet No. 2N5109 Generic Part Number: 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/453 Features: · VHF-UHF amplifier silicon transistor. · Housed in TO-39 case. · Also available in chip form using the 1007 chip geometry. · The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa meets in all cases , Operating Junction Temperature Storage Temperature o C o C Data Sheet No. 2N5109 Semicoa Semiconductors
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19500/453 2N5109 JAN
Abstract: 2N5109 SILICON NPN VHF POWER TRANSISTOR â'¢ Ideal for CATV Applications â'¢ Minimum , published at a later date. Texas Instruments 2-355 2N5109 SILICON NPN VHF POWER TRANSISTOR electrical , vs FREQUENCY Frequency - MHz Texas Instruments 2-355 2N5109 SILICOIM NPIM VHF POWER TRANSISTOR , = 50 mA 200 Frequency - MHz FIGURE 2 2-356 Texas Instruments 2N5109 SILICON NPN VHF POWER TRANSISTOR TYPICAL POWER GAIN ) NOISE FIGURE ) vs COLLECTOR CURRENT VCC = I5V i f = 200MHz 20 M 60 80 100 -
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LA 4440 IC LA 4127 IC LA 4127 t 3866 power transistor ic la 4440 2N3927 T0-60CE 25PEP 20PEP 40PEP 80PEP
Abstract: 2N5109 Silicon NPN Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N5109J) · JANTX level (2N5109JX) · JANTXV level (2N5109JV) · JANS level (2N5109JS) · QCI to the applicable level · 100% die visual inspection per , 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5109 Silicon NPN Transistor Data Sheet , · General purpose · VHF-UHF amplifier transistor · NPN silicon transistor Features · · · · Semicoa Semiconductors
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JANTX 2N5109 MIL-STD-750
Abstract: 2N5109 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N5109J) · JANTX level (2N5109JX) · JANTXV level (2N5109JV) · JANS level (2N5109JS) · QCI to the applicable level · 100% die visual , 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5109 Silicon NPN Transistor Data Sheet , Applications · General purpose · VHF-UHF amplifier transistor · NPN silicon transistor Features · · · · Semicoa Semiconductors
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2N510
Abstract: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose · VHF-UHF amplifier transistor · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N5109J) · JANTX level (2N5109JX) · JANTXV level , , California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5109 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Semicoa Semiconductors
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Abstract: 4b E D h3b?2S4 OOcmOb b 1 flOTb T -3 3 -n 2N5109 MOTOROLA TECHNICAL DATA , HIGH-FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for , M P R - C A S E 79-04 TO-205AO (TO-39) MOTOROLA RF DEVICE DATA 2-44 I 2N5109 MbE D , ) i c ,COLLECTOR CURRENT imAdd NJ 2N5109 MOTOROLA SC (XSTRS/R F) 4bE ]> b3b75S4 x - 3 3 - n , b3b?554 QQ'JMO?! S ttOTb 2N5109 T-S3-U F IG U R E 18 - F O R W A R D T R A N SM IS SIO N -
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2N5109 motorola c0851
Abstract:  CASE 317-01 Macro-X CASE 317A-01 Macro-T CASE 317D CASE 79-03 CASE 305A-01 Motorola's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , 5/2 1000 5.0/500 TO-72 BFX89 5/25 1200 6.5/500 TO-72 2N5109 15/50 1200 3.0*/200 TO -
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2N5836 BFR96 MRF586 MRF965 2N5835 MM4049 BFY90 MOTOROLA bfr91 motorola MOTOROLA 2N5179 2N5837 MRF511 MRF517 MRF525 2N2857
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