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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor 2N3053

Catalog Datasheet MFG & Type PDF Document Tags

2N3053

Abstract: MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 â'¢ Low Leakage Current, High Transition Frequency (FT) = 100MHz Typ. â'¢ Hermetic TO-39 Metal Package. â'¢ Ideally Suited For Medium Current Switching And Amplifier Applications. â'¢ Screening Options Available ABSOLUTE MAXIMUM , ://www.semelab-tt.com Document Number 3065 Issue 2 Page 1 of 3 MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 , POWER SILICON NPN TRANSISTOR 2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40
Semelab
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100MH

transistor 2n3053

Abstract: 2N3053 NPN transistor MEDIUM POWER SILICON NPN TRANSISTOR 2N3053 · · · Low Leakage Current, High Transition Frequency (FT) = 100MHz Typ. Hermetic TO-39 Metal Package. Ideally Suited For Medium Current Switching And Amplifier Applications. Screening Options Available · ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless , TRANSISTOR 2N3053 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO V(BR)CER , SILICON NPN TRANSISTOR 2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75
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transistor 2n3053 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 NPN Transistor 2n3053

pin configuration 2N3053 transistor

Abstract: transistor 2n3053 SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors , 1/32" from TL Case for 10s THERMAL RESISTANCE Junction to Case 2N3053A 60 80 2N3053 40 , =140KHz VEB=0.5V, IC=0, f=140KHz 2N3053 >40 >50 >60 2N3053A >60 >70 >80 >5.0 , 2N3053_A Rev_1 040406E Continental Device India Limited Data Sheet Page 1 of 3 2N3053 , Electrical and Electronic Equipment (WEEE). 2N3053_A Rev_1 040406E Continental Device India Limited
Continental Device India
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pin configuration 2N3053 transistor 2N3053, TO-39 PACK 2N3053 equivalent 2N3053 transistor C-120
Abstract: SILICON PLANAR TRANSISTOR 2N3053 / 2N3053A TO-39 Metal Can Package General Purpose Transistors , ", + 1/32" from TL Case for 10s THERMAL RESISTANCE Junction to Case 2N3053A 60 80 2N3053 , =10V, IE=0, f=140KHz VEB=0.5V, IC=0, f=140KHz 2N3053 >40 >50 >60 2N3053A >60 >70 >80 >5.0 , Cycle < 2% µ 2N3053_A Rev_1 040406E Continental Device India Limited Data Sheet Page 1 of 3 2N3053 / 2N3053A TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J Continental Device India
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RCR07

Abstract: AD420-EB Cap C9-12 0.1 (IF XR7 Ceramic C13, CI 4.7|IF Tantalum 25V Ql NPN Transistor 2N3053 Dl, D2 LED (Red
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AD420 AD420-EB RCR07 BASIC digital multimeter diagram AD420AR transistor directory DB-25 AD420/EB RN55C

2N3053 NPN transistor

Abstract: 2n3053 2N3053 2N3053A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for , -June 2012) 2N3053 2N3053A NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1 , PD TJ, Tstg JC 2N3053 60 40 2N3053A 80 60 UNITS V V V A W °C °C/W 5.0 0.7 5.0 -65 to +200 35 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3053 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE
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2N3053 NPN transistor hfe

2N3053 NPN transistor

Abstract: SILICON TRANSISTOR 2N3053 Data Sheet ^^ _ h TM 2N3053 ContPHl 2N3053A Wdl Lb Ul Semiconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA JEDEC TO-39 CASE Tel: (631) 435-1110 â'¢ Fax: (631 , 2N3053, 2N3053A types are Silicon NPN Epitaxial Planar Transistors designed for general purpose applications. MAXIMUM RATINGS (TA=25°C) SYMBOL 2N3053 2N3053A UNITS Collector-Base Voltage vCBO 60 80 V , Thermal Resistance ®JC 35 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 2N3053
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cev code

2N3053 NPN transistor

Abstract: 2N3053 2N3053 AMPLIFIERS AND SWITCH DESCRIPTION The 2N3053 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for medium-current switching and amplifier applications. TO , Temperature Value 60 40 5 700 5 ­ 65 to 200 Unit V V V mA W °C 1/4 2N3053 THERMAL DATA Rt h j- cas e , Unit nA V V V V V V V * Pulse : pulse duration = 300 µs, duty cycle = 1 %. 2/4 2N3053 TO39 , 3/4 2N3053 Information furnished is believed to be accurate and reliable. However
STMicroelectronics
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P008B

transistor 2n3053

Abstract: 2N3053 NPN transistor 2N3053 PHILIPS INTERNATIONAL A 5bE T> m 711002b G042b44 TIM «PHIN 7=35-/^ SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA Collector-base voltage (open emitter) vCBO max. 60 V Collector-emitter voltage (open base) vCEO max. 40 V Collector current (d.c.) 'C , Copyrighted By Its Respective Manufacturer August 1990 767 2N3053 = PHILIPS INTERNATIONAL" ~ SbE » â
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transistor 2n3053

Abstract: 2N3053 equivalent 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. · VCEO = 40V · IC = 5W 2.54 (0.100) 2 1 = 0.7A · Ptot 5.08 (0.200) typ. 3 0.66 (0.026) 1.14 (0.045 , 50V 60V 5V 0.7A 1W 5W 200°C ­65 to 200°C 35°C / W 175°C / W Prelim.01/01 2N3053
Semelab
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0015a C22B h21e transistor datasheet 2N3053
Abstract: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. â'¢ VCEO = 40V â'¢ IC = 5W 2.54 (0.100) 2 1 = 0.7A â'¢ Ptot 5.08 (0.200) typ. 3 0.66 (0.026) 1.14 (0.045 , .01/01 2N3053 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO Semelab
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transistor 2n3053

Abstract: 2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. · VCEO = 40V 5.08 (0.200) typ. · IC · Ptot 2.54 (0.100) = 0.7A = 5W 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 , : http://www.semelab.co.uk Document Number 3065 Issue 1 2N3053 ELECTRICAL CHARACTERISTICS
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transistor 2n3053

Abstract: h21e 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. · VCEO = 40V · IC = 5W 2.54 (0.100) 2 1 = 0.7A · Ptot 5.08 (0.200) typ. 3 0.74 (0.029) 1.14 (0.045 , 2N3053 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(SUS) Test
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TO-205AD

2N3055 TO220

Abstract: NPN Transistor 2N3055 darlington TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC (max) VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100 100 200 500 700 1000 3000 15000 V 45 20 40 25 40 30 60 60 (min/max) 110-450 110-800 100-300 50-300 50-250 40 min. 25 20 min. mW 300 300 350 300 5000 800 40W 115W
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2N3055 TO220 NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 BC178 BC559 ZTX500 TIP122 TIP127

RCA 40408 transistor

Abstract: RCA 40409 transistor ] 2N6033 [N-P-N] 2N3053 VCERISUSI = 50 V hFE - 50 260 @ 150 mA = 100 MHz min. CT File No.432E 2N4037 , ) - -400V IC - â'"2A (TC-66) 870 High-Speed N-P-N 'c = P-N-P 1 A N-P-N P-N-P 2N3053 VCER(SUSI -50 V , Complementary-Pair Power Types. POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit , to 50 kHz 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 - 60 to , Transistors for Series Reaulator Service and Video Outout Pass Transistor Conditions Peak Output Voitage (V
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RCA 40408 transistor RCA 40409 transistor rca 40409 rca 40361 transistor rca 40361 RCA transistor 40409 ITO-391 80-12SW 2N2102 2N4036 2N5320 2N5322

transistor 40409

Abstract: 40409 Transistor POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit Output Transistors Class B Driver Class B Pre-Driver M_p_KJ â  Class A Pre-Driver 16Q 4n (8Q Imped. ) N-P-N , 0.01 10 90 0.5 150 15 1.1 150 2N3053 40 V, General Purpose, Low Cost 40 50 60 - - - - 50-250 - - , 50-250 - _ 1QA â'" 9,9 1.4 150 nTUFB TVPF5 40389 2N3053 with Heat Radiator 40 50 60 - - - _ 50-250 _ - 0.25 _ 30 1.4 150 15 1.7 150 40392 2N3053 with Flange 40 50 60 - - - _
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2N6320 transistor 40409 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 40409 silicon 2N6292 2N6111 2N5495 2N6269 2N6386 TA8201
Abstract: 2N3053 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA AMPLIFIER TRANSISTOR * Collector-Emitter VoMags ; Vceo=40V * Collector Dissipation: Pc(max)=625 mW ABSOLUTE MAXIMUM RATINGS at Tamb=25'C C haracteristic Symbol R ating Unit Collector-Base Volte® Collector-Emitter Voltage Vcbo Vceo 40 40 V V Emitter-Base Voltage Vebo 4 V Collector Current Ic 100 mA Collector Dissipation Pc 625 mW °C -
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IC 406

Abstract: transistor 2n3053 MM3053 (SILICON) NPN SILICON ANNULAR TRANSISTOR . . . designed for medium current, medium power amplifier and switching applications. High Collector-Emitter Breakdown Voltage BVcEO = 50 vdc Similar to 2N3053 in an easy to handle TO-39 Package Collector Current â'" Continuous IC = 1.0 Adc NPN SILICON SWITCHING AND AMPLIFIER TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage vCBO 80 Vdc Emitter-Base Voltage VEBO 6.0 Vdc
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IC 406

transistor 2n3053

Abstract: 2N3053 equivalent MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N3053 Features · · · · Medium Power Silicon NPN Planar Transistor VCEO=40V IC=0.7A Ptot=5.0W Rth(jc) is 35OC/W, Rth(ja) is 175OC/W Maximum Ratings Symbol V CEO V CBO V EBO IC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Breakdown Voltage Emitter-Base Voltage Collector Current Operating Junction Temperature Storage Temperature Rating 40 60 5.0 700 -55 to +150 -55 to +150 TO
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Abstract: , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8980 2N3053 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR FEATURES = 40V â'¢ lc = 0.7A â'¢Ptot TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Collector - Emitter Voltage 60V 40V VCER Collector- Emitter Sustaining Voltage New Jersey Semiconductor
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