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transistor 14315

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transistor 14315

Abstract: 14315 MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.4dB (at f = 2 GHz) High gain: gain = 8dB (at f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction , 175.68 170.51 165.94 162.06 158.37 154.54 150.55 147.06 143.15 140.08 136.43 133.53 131.09 Mag. 30.70
Toshiba
Original
transistor 14315 14315

specifications of ic 8038

Abstract: working of ic 8038 MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.4dB (at f = 2 GHz) High gain: gain = 8dB (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction , 175.68 170.51 165.94 162.06 158.37 154.54 150.55 147.06 143.15 140.08 136.43 133.53 131.09 Mag. 30.70
Toshiba
Original
specifications of ic 8038 working of ic 8038 for semiconductor IC 7106

specifications of ic 8038

Abstract: ic LC 7815 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR MT3S03T V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03T SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm · · Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) High Gain : Gain -8 dB (at f = 2 GHz) UNIT V V V mA mA mW °C °C MAXIMUM RATINGS (Ta = 25 , 0.347 150.55 3.19 0.188 70.88 0.344 3.02 70.44 147.06 73.43 0.201 0.341 0.214 143.15 2.85 72.09 70.07
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OCR Scan
ic LC 7815
Abstract: TO SHIBA TENTATIVE MT3S03T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0.05 â'¢ Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) â'¢ High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter , 170.51 165.94 162.06 158.37 154.54 150.55 147.06 143.15 140.08 136.43 133.53 131.09 Mag. O -
OCR Scan
961001EAA1

working of ic 8038

Abstract: marking 5241 MT3S03AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.4dB (at f = 2 GHz) · Unit: mm High gain: gain = 8dB (at f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 0.053 -143.48 9.60 1600 0.341 143.15 2.85 72.09 0.214 70.07 0.046
Toshiba
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marking 5241 8250 bridge IC 7486 ic 7815
Abstract: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 40 10 100 125 -55-125 UNIT V V V mA mA mW °C °C SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 1.2 ±0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) TTirrV» fio i n J-J-lgll V ^U lll U .1 1 1 MAXIMUM , 143.15 140.08 136.43 133.53 131.09 Mag. (°) 30.70 18.94 13.32 10.24 8.30 6.96 6.01 5.32 4.77 4.30 3.96 -
OCR Scan
000707EAA2 IS21I2
Abstract: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) TTirrV» fio i n J J l g l l V ^ U l l l U .1 1 1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage , 162.06 158.37 154.54 150.55 147.06 143.15 140.08 136.43 133.53 131.09 Mag. (°) 30.70 18.94 13.32 10.24 -
OCR Scan

of ic 8038

Abstract: MT3S03AT MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.4dB (typ.) (at f = 2 GHz) · Unit: mm High gain: gain = 8dB (typ.) (at f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 1600 0.341 143.15 2.85 72.09 0.214 70.07 0.046 -142.20 9.09 1700 0.334
Toshiba
Original
of ic 8038

MT3S03T

Abstract: TO SHIBA TENTATIVE TOSHIBA TRANSISTOR MT3S03T VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03T SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 100 10 100 125 -55-125 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 1.2 ±0.05 0.8 ± 0.05 · · Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) High Gain : Gain = 8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , 147.06 143.15 140.08 136.43 133.53 131.09 Mag. (°) 30.70 18.94 13.32 10.24 8.30 6.96 6.01 5.32 4.77 4.30
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OCR Scan

working of ic 8038

Abstract: working of IC 7486 TOSHIBA MT3S03AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS â'¢ Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) â'¢ High Gain : Gain = 8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. M R U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter Voltage , 0.053 -143.48 9.60 1600 0.341 143.15 2.85 72.09 0.214 70.07 0.046 -142.20 9.09 1700 0.334 140.08 2.73
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OCR Scan
working of IC 7486 8250 ic pin ic 8038

sanyo ic 7550

Abstract: IC 7458 Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Low-Noise Amplifier and OSC Applications · · · · Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). High cutoff frequency : fT=6.5GHz typ (VCE=1V). : fT=11.2GHz typ (VCE=3V). Low operating voltage. Ultraminiature and thin flat leadless package (1.4mm0.8mm0.6mm). unit : mm , 72.82 0.217 19.07 0.608 -61.87 1800 0.679 -143.15 1.446 65.86 0.212
SANYO Electric
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sanyo ic 7550 IC 7458 Transistor C 4927 16451 ic D2502 7522 ps

sanyo ic 7550

Abstract: 5645 marking Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Low-Noise Amplifier and OSC Applications · · · · Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). High cutoff frequency : fT=6.5GHz typ (VCE=1V). : fT=11.2GHz typ (VCE=3V). Low operating voltage. Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). unit , 0.679 -143.15 1.446 65.86 0.212 17.01 0.600 -65.17 2000 0.659 -149.92
SANYO Electric
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5645 marking OF IC 7270 276-143 transistor 9647 6221 ic marking 12697

motorola 8822

Abstract: IRL 1630 MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. 3.5 GHz, 3 W, 12 V POWER FET GaAs , ­32.36 0.539 159.16 2.55 0.876 143.15 1.971 17.38 0.040 ­32.95 0.541
Motorola
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motorola 8822 IRL 1630 transistor 17556 17556 transistor transistor 115 h 8772 p motorola 7913

14315* transistor

Abstract: power mosfet 7515 are independent of operating junction temperature. `2 Motorola TMOS Power MOSFET Transistor , Power MOSFET Transistor Device Data Voltage versus Current 5 - - , ~Y&,: ,y , voltage and drain current that a transistor can handle safely when it is forward biased, Cuwes are based , Junction Temperature Motorola TMOS Power MOSFET Transistor Device Data MMSF3P02HD WPICAL ELECTRICAL CHARACTERISTICS - Waveform , Motorola TMOS Power MOSFET Transistor
Motorola
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14315* transistor power mosfet 7515 100CC AN569 MMSF3P02HDR2 WFs transistor MMSF3P02HD/D
Abstract: RF Power Field Effect Transistor CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum , 159.16 2.55 0.876 143.15 1.971 17.38 0.040 - 32.95 0.541 158.56 2.60 Freescale Semiconductor
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MRFG35003NT1

ma 8630

Abstract: 100B101 Freescale Semiconductor Technical Data MRFG35003NT1 replaced by MRFG35003ANT1. Document Number: MRFG35003N Rev. 5, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. · Typical W - CDMA Performance: - 42 dBc , 146.91 146.12 145.07 144.07 143.15 142.10 140.88 139.83 138.60 137.26 |S21| 8.644 7.924 7.317 6.811 6.380
Freescale Semiconductor
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ma 8630 100B101

2312 footprint dimension

Abstract: A113 Document Number: MRFG35002N6 Rev. 1, 5/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. · Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA , 0.0361 - 31.7 0.697 146.2 2.65 0.895 143.15 1.46 21.34 0.0365 - 32.5
Freescale Semiconductor
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MRFG35002N6T1 2312 footprint dimension A113 AN1955 GT1040

8772 P

Abstract: motorola 10116 Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications , ­32.36 0.539 159.16 2.55 0.876 143.15 1.971 17.38 0.040 ­32.95 0.541
Motorola
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8772 P motorola 10116 motorola 6809 PLD15

GT1040

Abstract: MRFG35002N6AT1 260 ARCHIVE INFORMATION ARCHIVE INFORMATION RF Power Field Effect Transistor °C 1. For , 1.47 22.69 0.0361 - 31.7 0.697 146.2 2.65 0.895 143.15 1.46 21.34
Freescale Semiconductor
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MRFG35002N6AT1 466 907
Abstract: Power Field Effect Transistor CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings , 1.47 22.69 0.0361 - 31.7 0.697 146.2 2.65 0.895 143.15 1.46 21.34 Freescale Semiconductor
Original
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