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LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy

transistor 1240

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2DI100MA-050 2DI100MA-050 (100A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline , (Tc=25°C unless otherwise specified) Item DC 1ms DC DC 1ms one Transistor two Transistor AC.1min Symbol Rating VCBO 600 VCEO 600 VCEO(SUS) 450 VEBO 10 IC 100 ICP 200 -IC 100 IB 6 IBP 12 PC 620 PC 1240 Tj +150 -40 to +125 Tstg m 450 Viso , (c-f) Test Conditions Transistor Diode With Thermal Compound Min. Typ. 0.025 1 ... Original
datasheet

3 pages,
337.45 Kb

transistor P 0.2 V M203 2DI100MA-050 transistor 1240 2DI100MA-050 abstract
datasheet frame
Abstract: 2DI100M-050 2DI100M-050 (100A) FUJI POWER TRANSISTOR MODULE : : Outline Drawings POWER TRANSISTOR , DC 1ms DC DC 1ms one Transistor two Transistor AC.1min Di d e , 12 PC 620 PC 1240 Tj +150 -40 to +125 Tstg m 340 Viso 2500 Mounting *1 3.5 Terminal *1 , ) Rth(j-c) Rth(c-f) Test Conditions Transistor Diode With Thermal Compound Min. Typ. Units 0.2 0.8 0.04 Max. °C/W °C/W °C/W 1 2DI100M-050 2DI100M-050 (100A) FUJI POWER TRANSISTOR ... Original
datasheet

3 pages,
263.78 Kb

2DI100M-050 2DI100M-050 abstract
datasheet frame
Abstract: 2DI100D-050 2DI100D-050 (100A) FUJI POWER TRANSISTOR MODULE POWER TRANSISTOR MODULE : : Outline , (Tc=25°C unless otherwise specified) Item DC 1ms DC DC 1ms one Transistor two Transistor AC.1min Di d e nu i t : Equivalent Circuit Schematic , 7 IC 100 ICP 200 -IC 100 IB 6 IBP 12 PC 620 PC 1240 Tj +150 -40 to +125 Tstg m , characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Transistor Diode With ... Original
datasheet

3 pages,
330.08 Kb

transistor 100a 2DI100D-050 2DI100D-050 abstract
datasheet frame
Abstract: 100 A ^ X H >;t DC Ib 6 A 1ms Ibp 12 A one Transistor Pc 620 W two Transistors Pc 1240 W « ^ , FUJI aiuMgnraie 2D 1100D-050 1100D-050 2-Pack BJT 600 V 100 A POWER TRANSISTOR MODULE I Features • 7'J l) Krt» Including Free Wheeling Diode • hFE/fiS^ High DC Current Gain • Insulated Type -ffliÊ : Applications • 7f HigH Power Switching • AC ^-^SJ» A.C Motor Controls • DC*-?»]« D.C Motor Controls • , Characteristics Items Symbols Test Conditions Min Typ Max Units m & ÎA Rth(j-c) Transistor 0.2 °C/W m & ... OCR Scan
datasheet

2 pages,
97.05 Kb

KRT 30 BJT IC Vce BJT 600V bjt 100a 600v 1100D-050 power bjt transistor 600v bjt 100a BJT with V-I characteristics 100D-050 100D-050 abstract
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Abstract: 0,1-240 Drossel D 3 0,1-300 Drossel D 3 0,1-360 Drossel D 3 1,0-51 Bildausgangstrafo Tr 8 , B Diode D 220 Diode D 211 Diode D 242 B Z-Diode D 814 B Transistor GT 328 B Transistor GT 313 A Transistor KT 315 A Transistor P 416 B Transistor MP 38 Transistor GT 404 B Transistor GT 402 B Transistor MP 40 A Transistor KT 315 G Transistor MP 42 A Transistor MP 42 B Transistor KT 801 B Transistor GT 906 A Transistor KT 611 G Transistor P 4 DB Transistor GT 313 B/G Bildröhre 23 LK 13 B Thermistor S T ... OCR Scan
datasheet

4 pages,
854.49 Kb

transistor x 313 transistor mp 27 drossel filter F 11 Frankfurt Oder trafo 95 95 GT 404 gt 906 PCL 86 293-0112 junost 603 transistor kt 801 transistor kt transistor BD 512 datasheet abstract
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Abstract: transistor to regulate output voltages from 1.24V to 12V. At the heart of the LDS124P LDS124P is a precision , to 10 Amps through a pass transistor. This combination makes a very flexible regulator in terms of , Min Typ Max Units 1.221 1.240 1.259 V 4 12 mV VREF Temperature , Reference voltage (V) 1.244 1.242 1.240 1.238 1.236 1.234 150 125 100 75 50 0 25 , regulator is illustrated in Figure 1. The LDS124P LDS124P combined with a common low cost NPN transistor can ... Original
datasheet

9 pages,
487.31 Kb

LM1117 LM1085 LM1084 LDS* leadis free LM1117 LM1086 TRANSISTOR lm1084 sot23-3 LM1117 LDS124P LDS124P abstract
datasheet frame
Abstract: Amperes Power Dissipation (Each Transistor) Pt 1240 Watts Max. Mounting Torque M6 Terminal Screws , Higtl-BOta Dual Darlington Transistor Module 200 Amperes/600 Amperes/600 Volts OUTLINE DRAWING r CD E - L G SB , M6 Metric M6 K 0.63 16 Description: The Powerex High-Beta Dual Darlington Transistor Modules , , consisting of two Darlington Transistors with each transistor having a reverse parallel connected high-speed , ) 925-7272 KD424520HB KD424520HB High-Beta Dual Darlington Transistor Module 200 Amperes/600 Amperes/600 Volts Absolute Maximum ... OCR Scan
datasheet

4 pages,
275.45 Kb

U300 KD424520HB diode D83 KD424520HB abstract
datasheet frame
Abstract: fe D a r U n g tO tl Transistor Module 50 Amperes/850 Amperes/850 Volts Description OUTLINE DRAWING r , Transistor Modules with high Vcev voltage are designed for use in resonant inverter applications. The modules are isolated, consisting of one Darlington Transistor with a reverse parallel connected high-speed , KSF24505 KSF24505 Fast Switching Single Darlington Transistor Module Planar Chips Discrete Fast Recovery , Millimeters Dimension Inches A B C D E F G H J K L M N 2.185 Max. 1.705 ±.012 1.240 1.220 Max. ... OCR Scan
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4 pages,
331.36 Kb

datasheet abstract
datasheet frame
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 M3D091 BLF548 BLF548 UHF push-pull power MOS transistor , specification UHF push-pull power MOS transistor FEATURES BLF548 BLF548 PIN CONFIGURATION · High power , transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The , 3 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for , Product specification UHF push-pull power MOS transistor BLF548 BLF548 LIMITING VALUES In accordance ... Original
datasheet

15 pages,
113.12 Kb

MRA524 BLF548 M3D091 M3D091 abstract
datasheet frame
Abstract: T1P3003028-SP T1P3003028-SP 30 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Introduction The T1P3003028-SP T1P3003028-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to , W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Electrical Characteristics , MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Figure 2. P1dB & Efficiency (Narrow Band , T1P3003028-SP T1P3003028-SP 30 W, 28V, 500 MHz-2GHz, Pulsed, PowerbandTM pHEMT RF Power Transistor Figure 3. P1dB & Gain ... Original
datasheet

7 pages,
356.51 Kb

T1P3003028-SP T1P3003028-SP abstract
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diode equation to compute the tempco of a transistor's VBE, and it doesn't seem to make any concept this could be used for computing the actual VBE of the transistor, at various currents stated that it was based on the real data, for a real standard transistor, and it's what I use "This line is based on some measured data. This transistor, when used in a band-gap reference, has a Magic Voltage of about 1.240 V. That's where the band-gap runs flattest. So this line
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Receive via Email 02-Jul-2002 AN-1240 Application Note 1240 Video Transmission Transistor Pair Sets New Standards for Drift and Noise 399 View Online Download
www.datasheetarchive.com/files/national/htm/nsc01248-v3.htm
National 16/08/2002 19.92 Kb HTM nsc01248-v3.htm
Super Matched Bipolar Transistor Pair Sets New Standards for Drift and Noise 399 View Online Email LMH6643 LMH6643 LMH6643 LMH6643 AN-1240 Application Note 1240 Video Transmission over
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National 16/08/2002 21.13 Kb HTM nsc01247-v3.htm
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www.datasheetarchive.com/download/30039185-772110ZC/low_biptrv04.zip (NE97733v1_p1-2p5_8_5.s2p)
Spice Models 29/07/2012 637.53 Kb ZIP low_biptrv04.zip
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www.datasheetarchive.com/download/6885988-772112ZC/nec_devicesv2.1.zip (NE68939v1_1p5-2p5_3_70.s2p)
Spice Models 29/07/2012 4009.86 Kb ZIP nec_devicesv2.1.zip