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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

transistor 107A equivalent

Catalog Datasheet MFG & Type PDF Document Tags

4000w pfc circuit

Abstract: 1402C transistor Single Phase 24V 125A M3000-26-4 3000W Single Phase 28V 107A M3000-26-5 3000W , Three Phase 24V 125A M3000-86-4 3000W Three Phase 28V 107A M3000-86-5 3000W , connector is Molex 39-30-1140 or equivalent. Mating connector is Molex 39-01-2140 or equivalent. D J-2 signal connector is Molex 39-01-1120 or equivalent. Mating connector is 39-01-2120 or equivalent. E Signal connector contacts are Molex 39-00-0039 or equivalent. F Auxiliary DC output(s) are 6 position
Artesyn Technologies
Original
M3000 4000w pfc circuit 1402C transistor pfc 3000w 3kw pfc transistor 1402c 3000w pfc M4000 M3000/M4000 VDE0805/EN60950/IEC950 R9373263 UL1950

ac to dc 3000w power supply

Abstract: transistor 107A equivalent Notes 1 2 3 O UTPUT C U R R EN T 600A 600A 600A 250A 200A 125A 107A 63A 600A 600A 600A 250A 200A 125A 107A 63A 800A 800A M O D EL N U M B E R I3 I M3000-26-0 M3000-26-9 M3000-26-1 M3000-26-2 M3000 , mating to 5/16 terminal lugs. C J-1 signal connector is Molex 39-30-1140 or equivalent. Mating connector is Molex 39-01-2140 or squivalent. D J-2 signal connector is Molex 39-01-1120 or equivalent. Mating connector is 39-01-2120 or equivalent. E Signal connector contacts are Molex 39-00-0039 or equivalent. F
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ac to dc 3000w power supply transistor 107A equivalent 20AWG E135734 1402C

thermistor 103AT-2

Abstract: thermistor 103AT -cell NiMH stack between the B- and B+ pads observing proper polarity. Connect a recommend or equivalent , exceed the power rating of the regulating transistor on the linear board. Maxim recommends using a 6V , of ~1.07A for the switch mode kit. CHARGE TIME AND TOP-OFF TIME ADJUSTMENT Charge time and
Dallas Semiconductor
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DS2715 DS2715KLINEAR DS2715KSWITCH 103AT-2 thermistor 103AT-2 thermistor 103AT nimh charge controller R/1000 DS2715K

TRANSISTOR 117a

Abstract: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN (509) Features â'¢ High Gain (19dB Typical @ 450 MHz) â'¢ Low Noise Figure At Low Ic â'¢ Gold Metalization â'¢ Useful To 700 MHz â'¢ Can be Screened to JANTX, JANTXV Equivalent Levels â'¢ Excellent Reliability , Transistor offers low noise, high gain performance, which meets or exceeds all JAN specifications. These , 108° 3.9 97° 3.7 91° 2.1 107° 2.2 102° 2.8 92° 3.4 87° 2.0 101° 2.2 97° 2.8
M-Pulse Microwave
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TRANSISTOR 117a MIL-MRF19500

transistor marking code H11S

Abstract: marking CODE H11S RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 2 3 1 4 5 RA05H8693M , flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips , used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=14V and Pin=1mW each stage transistor operating , temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase
Mitsubishi
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RA05H8693M-101 transistor marking code H11S marking CODE H11S H11S 866-928MH 928MH

transistor marking code H11S

Abstract: H11S SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA05H9595M EQUIVALENT CIRCUIT 2 , mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded , coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=14V and Pin=1mW each stage transistor operating conditions are: Pin IDD @ IT=1.4A Pout , 0.70 4.5 0.30 rd 3 0.700 3.00 3.0 1.07 The channel temperatures of each stage transistor Tch =
Mitsubishi
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RA05H9595M-101 rf transistor mar 8 150 mhz amplifier module 5w MOSFET Amplifier Module 952-954MH 954-MH
Abstract: resistive path from the charge source to the cell pack bypassing the regulating transistor. See the example , regulating transistor until the DS2715 switches to DISCHARGE mode. While in this mode, voltage sensing , control transistor into a low impedance state and allow the pack to be discharged. Current drain of the , PMOS transistor, enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3 Maxim Integrated Products
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DS2715B

D2715

Abstract: resistive path from the charge source to the cell pack bypassing the regulating transistor. See the example , regulating transistor until the DS2715 switches to DISCHARGE mode. While in this mode, voltage sensing , control transistor into a low impedance state and allow the pack to be discharged. Current drain of the , PMOS transistor, enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3
Maxim Integrated Products
Original
D2715
Abstract: resistive path from the charge source to the cell pack bypassing the regulating transistor. See the example , regulating transistor until the DS2715 switches to DISCHARGE mode. While in this mode, voltage sensing , control transistor into a low impedance state and allow the pack to be discharged. Current drain of the , PMOS transistor, enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3 Maxim Integrated Products
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thermistor 103AT-2

Abstract: NTC 103AT-2 transistor. See the example in the circuit of Figure 3. The DS2715 remains in the DONE state until a cell , discharge current must flow through the parasitic diode of the PFET regulating transistor until the DS2715 , disabled. The VCH pin is driven low to fully bias the charge control transistor into a low impedance state , PMOS transistor, enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3. THM THRESHOLDS
Maxim Integrated Products
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NTC 103AT-2 semitec 103AT-2 DVD player circuit diagram Data sheet of thermistor 10K ohms ntc 103at ntc semitec rohs AT
Abstract: resistive path from the charge source to the cell pack bypassing the regulating transistor. See the example , transistor until the DS2715 switches to DISCHARGE mode. While in this mode, voltage sensing, thermal sensing , transistor into a low impedance state and allow the pack to be discharged. Current drain of the DS2715 drops , PMOS transistor, enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3 Maxim Integrated Products
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d2715

Abstract: 197-103LAG-A01 one-way resistive path from the charge source to the cell pack bypassing the regulating transistor. See , diode of the PFET regulating transistor until the DS2715 switches to DISCHARGE mode. While in this mode , bias the charge control transistor into a low impedance state and allow the pack to be discharged , output is capable of driving a PNP bipolar or a PMOS transistor, enabling the use of a switch-mode power , normally and TOPOFF will begin if the voltage change on THM exceeds the equivalent TTERM ºC per minute (dT
Maxim Integrated Products
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197-103LAG-A01 DS2715Z D2715B overcharge protection circuit nimh single cell 8 pin resistor pack small size 173-103LAF-301

fenwal sensing element

Abstract: charge source to the cell pack bypassing the regulating transistor. See the example in the circuit of , . Initially, the discharge current must flow through the parasitic diode of the PFET regulating transistor , the LED1 output are disabled. The VCH pin is driven low to fully bias the charge control transistor , is capable of driving a PNP bipolar or a PMOS transistor, enabling the use of a switch-mode power , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3
Maxim Integrated Products
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fenwal sensing element DS2715B2

Semitec THERMISTOR DATE CODE

Abstract: overcharge protection circuit nimh single cell the charge source to the cell pack bypassing the regulating transistor. See the example in the circuit , . Initially, the discharge current must flow through the parasitic diode of the PFET regulating transistor , the LED1 output are disabled. The VCH pin is driven low to fully bias the charge control transistor , and low thresholds. The VCH output is capable of driving a PNP bipolar or a PMOS transistor, enabling , will complete normally and TOPOFF will begin if the voltage change on THM exceeds the equivalent TTERM
Maxim Integrated Products
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Semitec THERMISTOR DATE CODE fenwal thermistor sized marking CTG SO-16 DS2715BZ

lt1581

Abstract: Control Section . 0°C to 125°C Power Transistor , Circuitry/Power Transistor 2 q q q 0.004 0.65/2.50 0.020 %/W °C/W LT1581/LT1581 , current required for the output transistor. This current will track output current with roughly a 1:100 , power for the control circuitry and supply the drive current to the NPN output transistor. This allows , current for the NPN output transistor. This drive current becomes part of the output current. The
Linear Technology
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lt1581 LT1581/LT1581-2 LT1584 LT1581 166MH ZVN4206 2N7002

LTC1267

Abstract: MAXIMUM RATINGS Power Transistor LT1580C . 0°C to 150 , 0.002 Thermal Resistance, Junction-to-Case T, T7 Packages, Control Circuitry/Power Transistor 0.65 , for the output transistor. This current will track output current with roughly a 1:100 ratio. The , current to the NPN output transistor. This allows the NPN to be driven into saturation, thereby 6 , 7A load. The bulk of this current is drive current for the NPN output transistor. This drive
Linear Technology
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LTC1267 LT1580/LT1580-2 LT1580 2N3904 LT1587 LTC1430

smd transistor ha7

Abstract: 50gk . ±37V Ceramic LCC Package. 107°C/W 33°C/W Input Voltage Range.Full , (iF/Socket (10%) D-| « D2 â = IN4002 or Equivalent/Board I *o , ): Unbiased G LASS i VATIO N: Type: Silox Thickness: 7kÃ" ± 0.7kÃ" TRANSISTOR COUNT: 76 PROCESS: HV200 Std
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HA-2640 smd transistor ha7 50gk HA4-2640/smd transistor ha7 smd capacitor 107A tr/mcr-1-1/smd transistor ha7 HA-2640/883

H11S

Abstract: RA05H9595M RA05H9595M EQUIVALENT CIRCUIT 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain , flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips , used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=14V and Pin=1mW each stage transistor operating , temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase
Mitsubishi
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H11S

Abstract: RA05H8693M (Case) EQUIVALENT CIRCUIT 2 3 1 4 5 22 Jun 2010 RA05H8693M 6/9 Silicon RF , . The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with , be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=14V and Pin=1mW each stage transistor , channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are
Mitsubishi
Original

H11S

Abstract: RA05H8693M RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 2 3 1 4 5 RA05H8693M , mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded , coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=14V and Pin=1mW each stage transistor operating conditions are: Pin Pout Rth(ch-case , 0.70 4.5 0.30 rd 3 0.700 3.00 3.0 1.07 The channel temperatures of each stage transistor Tch =
Mitsubishi
Original
W3015
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