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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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RJP1CS10DWT-80#X0
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Renesas Electronics Corporation
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IGBT 1250V 10A Chip |
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RJP1CS10DWS-80#W0
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Renesas Electronics Corporation
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IGBT 1250V 10A Sawn |
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RJP1CS10DWA-80#W0
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Renesas Electronics Corporation
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IGBT 1250V 10A Wafer |
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XPQR8308QB
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL |
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