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BDX33CG ON Semiconductor 10 A, 100 V NPN Darlington Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE visit Digikey
BDX33C STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS visit Digikey
2N3810L Microsemi Corporation Transistor visit Digikey
2N2904AL Microsemi Corporation Transistor visit Digikey
2N3499L Microsemi Corporation Transistor visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey

transistor bdx33c

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 5.0 10 15 0.25 70 0.56 T j' Tstg -6 5 to + 150 BDX33C BDX34C 100 100 Unit Vdc Vdc Vdc Adc Adc Watts , Bipolar Power Transistor Device Data BDX33B BDX33C BDX34B BDX34C ELECTRICAL CHARACTERISTICS (Tc - 25 , otorola B ipolar Power Transistor Device Data BDX33B BDX33C BDX34B BDX34C 002 0.03 1.0 2.0 3.0 , BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low Coiiector-Emitter Saturation Voltage VcE(sat) = 2.5 Vdc , BDX33C/BDX34C VCER(sus) BDX33B/BDX34B BDX33C/BDX33C VCEX(*us) BDX33B/BDX34B BDX33C/BDX34C 'CEO Tc - 25 -
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33C/34B 00X330 DX33C
Abstract: Bipolar Power Transistor Device Data 10 BDX33B BDX33C BDX34B BDX34C PACKAGE DIMENSIONS ­T­ B , 221A­06 TO­220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 BDX33B BDX33C BDX34B , BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B * BDX34C . . . , BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C · Low Collector­Emitter Saturation Voltage VCE , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc Motorola
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BDX33B/D
Abstract: BDX33B BDX33C BDX34B BDX34C There are two limitations on the power handling ability of a transistor , general purpose and low speed switching applications. NPN BDX33B BDX33C* PNP · High DC Current , (sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low Collector-Emitter Saturation , MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB BDX33B BDX34B 80 80 BDX33C BDX34C 100 100 Unit Vdc Vdc , 0.56 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 150 ON Semiconductor
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Abstract: Bipolar Power Transistor Device Data 10 BDX33B BDX33C BDX34B BDX34C PACKAGE DIMENSIONS ­T­ B , 221A­06 TO­220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 BDX33B BDX33C BDX34B , BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . , BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C · Low Collector­Emitter Saturation Voltage VCE , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc Motorola
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box 34b Box 34C BDX33C MOTOROLA
Abstract: 100 mAdc V cE O isus^ = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low C ollector-Em , Construction with B uild-In B ase-E m itter Shunt resistors T O -220A B Compact Package BDX33B BDX33C , Junction Temperature Range Symbol VCEO VCB Veb BDX33B BDX34B 80 80 5.0 10 15 0.25 BDX33C BDX34C , 0-10 0 VOLTS 70 WATTS ic Iß Pd Adc 70 0.56 Watts W /°C °C Tj, TSfg - 6 5 t o + 150 , ollector-E m itter Sustaining Voltage 1 (Iq = 1 0 0 mAdc, Ig = 0) V cE O (su s) BDX33B/BDX34B BDX33C/BDX34C V -
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BD PNP 34B100 3c transistor
Abstract: BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , (min) - BDX33C, BDX334C Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 , Voltage BDX33B, BDX34B BDX33C, BDX34C VCEO Collector-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Unit Vdc 80 100 VCB BDX33B, BDX34B BDX33C, BDX34C Emitter-Base Voltage Value 1 , TC = 25_C TC = 100_C mAdc ICEO BDX33B/BDX34B BDX33C/BDX34C Collector-Emitter Sustaining ON Semiconductor
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10 amp pnp darlington power transistors BDX33CG BDX34CG marking 33c diode BDX334B
Abstract: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors , 100 mAdc â'¢ â'¢ â'¢ VCEO(sus) = 80 Vdc (min) â' BDX33B, BDX334B = 100 Vdc (min) â' BDX33C , BDX33B, BDX34B BDX33C, BDX34C VCEO Collectorâ'Base Voltage BDX33B, BDX34B BDX33C, BDX34C , °C ICBO TC = 25°C TC = 100°C ICEO BDX33B/BDX34B BDX33C/BDX34C Collectorâ'Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B BDX33C/BDX33C ON Semiconductor
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Abstract: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for , CBO 80 BDX33C BDX33D 120 45 60 BDX33A BDX33B V CEO 80 V 100 BDX33C , change without notice. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS , 80 BDX33C 100 120 V VCE = 30 V 0.5 IB = 0 BDX33A 0.5 IB = 0 BDX33B 0.5 VCE = 50 V IB = 0 BDX33C 0.5 Collector-emitter VCE = 60 V IB = 0 BDX33D Bourns
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BDX34 BDX34A BDX34D TCS130AF TCS130AH TCS130AJ
Abstract: (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C · Monolithic construction with Built-in , BDX33B BDX33C 3.66 G 4. Collector(Case) 15.31 C 3. Emitter 14.68 B 2 , .0 BDX33, 34 Darlington Transistors MAXIMUM RATINGS Characteristic Symbol BDX33B BDX33C , , BDX34B (IC = 100mA, IB = 0) BDX33C, BDX34C VCEO(sus) 80 100 - V Collector Cut off Current (VCE = 40V, IB = 0) BDX33B, BDX34B BDX33C, BDX34C (VCE = 50V, IB = 0) ICEO - 0.5 0.5 Multicomp
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DARLINGTON 30A 100V npn resistor farnell
Abstract: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR , V : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V 45 V : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V V cbO C ollecto r E m itter V oltage : BDX33 , Sym bol Min Typ Max Unit V : BDX33A 60 V : BDX33B 80 V : BDX33C , : BDX33C 60 V 80 Rbe = 100 Q. : BDX33B V 100 V cev(SUS) : BDX33A V 45 V -
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X34/34A/34B/34C BDX33/34 BDX33B/33C BDX33/33A
Abstract: Power Transistor Device Data 3-217 BDX33B BDX33C BDX34B BDX34C ELECTRICAL CHARACTERISTICS (Tq - 25Â , 50 100 3-218 Motorola Bipolar Power Transistor Device Data BDX33B BDX33C BDX34B BDX34C NPN , '" BDX33B, 34B 100 Vdc (min.) â'" BDX33C, 34C â'¢ Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 , Base-Emitter Shunt resistors â'¢ TO-220AB Compact Package MAXIMUM RATINGS NPN BDX33B BDX33C" PNP BDX34B BDX34C 'Motorola Preferred Devici Rating Symbol BDX33B BDX34B BDX33C BDX34C Unit Collector-Emitter -
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bdx340 BDX330 LJ e 34b 221A-06
Abstract: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR , MAXIMUM RATINGS Characteristic BDX33 Collector Base Voltage BDX33A BDX33B BDX33C Collector Emitter Voltage BDX33 BDX33A BDX33B BDX33C Collector Current (DC) Collector Current (Pulse) Base Current Collector , Collector Cutoff Current BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33/34 BDX33B/33C BDX33/33A BDX33B/33C BDX33/33A -
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power transistor Ic 4A NPN to - 251 BDX34/34A/34B/34C
Abstract: BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , BDX33C, BDX334C ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc - , , BDX34B BDX33C, BDX34C VCEO Collector-Base Voltage Unit TO-220AB CASE 221A-09 STYLE 1 Vdc 1 80 100 VCB BDX33B, BDX34B BDX33C, BDX34C Emitter-Base Voltage Value 2 3 , BDX33C/BDX34C Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc ON Semiconductor
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BDX33BG BDX334
Abstract: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR , 60 V BDX33B 80 V BDX33C 100 V Collector Emitter Voltage : BDX33 VcEO 45 V BDX33A 60 V BDX33B 80 V BDX33C 100 V Collector Current (DC) lc 10 A Collector Current (Pulse) lc 15 A Base , : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V "Collector Emitter Sustaining Voltage : BDX33 Vcer(sus) lc= 100mA, lB=0 45 V : BDX33A Rbe = 100Q 60 V : BDX33B 80 V : BDX33C 100 V -
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transistor bdx33c 100MA 45 V NPN transistor bdx33
Abstract: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These , mAdc · · · VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C Low , Voltage BDX33B, BDX34B BDX33C, BDX34C Collector-Base Voltage BDX33B, BDX34B BDX33C, BDX34C Symbol VCEO , , 2011 October, 2011 - Rev. 13 1 Publication Order Number: BDX33B/D BDX33B, BDX33C (NPN , (VCB = rated VCBO, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) BDX33B/BDX34B BDX33C/BDX34C ON Semiconductor
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33c marking
Abstract: products space space space BDX33C Related Links Products groups NPN Epitaxial Silicon Transistor Analog and , .Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current , : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B Fairchild Semiconductor
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BDX33 application notes BDX33CTU
Abstract: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , (unless otherwise noted) RATING BDX33 BDX33A Collector-base voltage ( lE = 0) BDX33B BDX33C BDX33D BDX33 BDX33A Collector-em itter voltage ( lB = 0) BDX33B BDX33C BDX33D Em itter-base voltage Continuous , all parameters. BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS AUG UST 1993 , BDX33A Iq = 100 mA lB = 0 (see Note 3) BDX33B BDX33C BDX33D V CE = V CE = V CE = V CE = breakdown -
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transistor BDX34 65
Abstract: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR , MAXIMUM RATINGS C haracteristic Collector Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) Collector Current (Pulse) Base , : BDX33A : BDX33B : BDX33C ` Collector Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C ` Collector Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Cutoff Current : BDX33 -
OCR Scan
Abstract: ON Semiconductor ) NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C , Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc , Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C PD, POWER DISSIPATION (WATTS) 80 , _C TC = 100_C ICBO TC = 25_C TC = 100_C mAdc ICEO BDX33B/BDX34B BDX33C/BDX34C mAdc ON Semiconductor
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Abstract: transistor parameters. Pow er I NNOV A T I ONS ¥ 0 3-93 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN , B0X33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright® 1997, Power , BDX33C BDX33D 8DX33 BDX33A Coflector-emitter voltage Ob = BDX33B BDX33C BDX33D Emitter-base voltage , indude testing of alt parameters. I NNOVAT I ONS P 3-91 BDX33, BDX33A, BDX33B, BDX33C, BDX33D , (see Note 3) BOX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D V VCE = 30 V VCE = 30 V -
OCR Scan
8DX33B BOX33 BDX338 TRANSISTOR BDX330 BOX33D bdx33d on T1903- B0X330 T1S130AB
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