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transistor bdx33c

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 5.0 10 15 0.25 70 0.56 T j' Tstg -6 5 to + 150 BDX33C BDX34C 100 100 Unit Vdc Vdc Vdc Adc Adc Watts , Bipolar Power Transistor Device Data BDX33B BDX33C BDX34B BDX34C ELECTRICAL CHARACTERISTICS (Tc - 25 , otorola B ipolar Power Transistor Device Data BDX33B BDX33C BDX34B BDX34C 002 0.03 1.0 2.0 3.0 , BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low Coiiector-Emitter Saturation Voltage VcE(sat) = 2.5 Vdc , BDX33C/BDX34C VCER(sus) BDX33B/BDX34B BDX33C/BDX33C VCEX(*us) BDX33B/BDX34B BDX33C/BDX34C 'CEO Tc - 25 -
OCR Scan
33C/34B 00X330 DX33C
Abstract: Bipolar Power Transistor Device Data 10 BDX33B BDX33C BDX34B BDX34C PACKAGE DIMENSIONS ­T­ B , 221A­06 TO­220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 BDX33B BDX33C BDX34B , BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B * BDX34C . . . , BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C · Low Collector­Emitter Saturation Voltage VCE , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc Motorola
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BDX33B/D
Abstract: BDX33B BDX33C BDX34B BDX34C There are two limitations on the power handling ability of a transistor , general purpose and low speed switching applications. NPN BDX33B BDX33C* PNP · High DC Current , (sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low Collector-Emitter Saturation , MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB BDX33B BDX34B 80 80 BDX33C BDX34C 100 100 Unit Vdc Vdc , 0.56 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 150 ON Semiconductor
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Abstract: Bipolar Power Transistor Device Data 10 BDX33B BDX33C BDX34B BDX34C PACKAGE DIMENSIONS ­T­ B , 221A­06 TO­220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 BDX33B BDX33C BDX34B , BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . , BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C · Low Collector­Emitter Saturation Voltage VCE , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc Motorola
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box 34b Box 34C BDX33C MOTOROLA
Abstract: 100 mAdc V cE O isus^ = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low C ollector-Em , Construction with B uild-In B ase-E m itter Shunt resistors T O -220A B Compact Package BDX33B BDX33C , Junction Temperature Range Symbol VCEO VCB Veb BDX33B BDX34B 80 80 5.0 10 15 0.25 BDX33C BDX34C , 0-10 0 VOLTS 70 WATTS ic Iß Pd Adc 70 0.56 Watts W /°C °C Tj, TSfg - 6 5 t o + 150 , ollector-E m itter Sustaining Voltage 1 (Iq = 1 0 0 mAdc, Ig = 0) V cE O (su s) BDX33B/BDX34B BDX33C/BDX34C V -
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BD PNP 34B100 3c transistor
Abstract: BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , (min) - BDX33C, BDX334C Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 , Voltage BDX33B, BDX34B BDX33C, BDX34C VCEO Collector-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Unit Vdc 80 100 VCB BDX33B, BDX34B BDX33C, BDX34C Emitter-Base Voltage Value 1 , TC = 25_C TC = 100_C mAdc ICEO BDX33B/BDX34B BDX33C/BDX34C Collector-Emitter Sustaining ON Semiconductor
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10 amp pnp darlington power transistors BDX33CG BDX34CG marking 33c diode BDX334B
Abstract: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors , 100 mAdc â'¢ â'¢ â'¢ VCEO(sus) = 80 Vdc (min) â' BDX33B, BDX334B = 100 Vdc (min) â' BDX33C , BDX33B, BDX34B BDX33C, BDX34C VCEO Collectorâ'Base Voltage BDX33B, BDX34B BDX33C, BDX34C , °C ICBO TC = 25°C TC = 100°C ICEO BDX33B/BDX34B BDX33C/BDX34C Collectorâ'Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B BDX33C/BDX33C ON Semiconductor
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Abstract: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for , CBO 80 BDX33C BDX33D 120 45 60 BDX33A BDX33B V CEO 80 V 100 BDX33C , change without notice. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS , 80 BDX33C 100 120 V VCE = 30 V 0.5 IB = 0 BDX33A 0.5 IB = 0 BDX33B 0.5 VCE = 50 V IB = 0 BDX33C 0.5 Collector-emitter VCE = 60 V IB = 0 BDX33D Bourns
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BDX34 BDX34A BDX34D TCS130AF TCS130AH TCS130AJ
Abstract: (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C · Monolithic construction with Built-in , BDX33B BDX33C 3.66 G 4. Collector(Case) 15.31 C 3. Emitter 14.68 B 2 , .0 BDX33, 34 Darlington Transistors MAXIMUM RATINGS Characteristic Symbol BDX33B BDX33C , , BDX34B (IC = 100mA, IB = 0) BDX33C, BDX34C VCEO(sus) 80 100 - V Collector Cut off Current (VCE = 40V, IB = 0) BDX33B, BDX34B BDX33C, BDX34C (VCE = 50V, IB = 0) ICEO - 0.5 0.5 Multicomp
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DARLINGTON 30A 100V npn resistor farnell
Abstract: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR , V : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V 45 V : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V V cbO C ollecto r E m itter V oltage : BDX33 , Sym bol Min Typ Max Unit V : BDX33A 60 V : BDX33B 80 V : BDX33C , : BDX33C 60 V 80 Rbe = 100 Q. : BDX33B V 100 V cev(SUS) : BDX33A V 45 V -
OCR Scan
X34/34A/34B/34C BDX33/34 BDX33B/33C BDX33/33A
Abstract: Power Transistor Device Data 3-217 BDX33B BDX33C BDX34B BDX34C ELECTRICAL CHARACTERISTICS (Tq - 25Â , 50 100 3-218 Motorola Bipolar Power Transistor Device Data BDX33B BDX33C BDX34B BDX34C NPN , '" BDX33B, 34B 100 Vdc (min.) â'" BDX33C, 34C â'¢ Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 , Base-Emitter Shunt resistors â'¢ TO-220AB Compact Package MAXIMUM RATINGS NPN BDX33B BDX33C" PNP BDX34B BDX34C 'Motorola Preferred Devici Rating Symbol BDX33B BDX34B BDX33C BDX34C Unit Collector-Emitter -
OCR Scan
bdx340 BDX330 LJ e 34b 221A-06
Abstract: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR , MAXIMUM RATINGS Characteristic BDX33 Collector Base Voltage BDX33A BDX33B BDX33C Collector Emitter Voltage BDX33 BDX33A BDX33B BDX33C Collector Current (DC) Collector Current (Pulse) Base Current Collector , Collector Cutoff Current BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33 BDX33A BDX33B BDX33C BDX33/34 BDX33B/33C BDX33/33A BDX33B/33C BDX33/33A -
OCR Scan
power transistor Ic 4A NPN to - 251 BDX34/34A/34B/34C
Abstract: BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , BDX33C, BDX334C ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc - , , BDX34B BDX33C, BDX34C VCEO Collector-Base Voltage Unit TO-220AB CASE 221A-09 STYLE 1 Vdc 1 80 100 VCB BDX33B, BDX34B BDX33C, BDX34C Emitter-Base Voltage Value 2 3 , BDX33C/BDX34C Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc ON Semiconductor
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BDX33BG BDX334
Abstract: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR , 60 V BDX33B 80 V BDX33C 100 V Collector Emitter Voltage : BDX33 VcEO 45 V BDX33A 60 V BDX33B 80 V BDX33C 100 V Collector Current (DC) lc 10 A Collector Current (Pulse) lc 15 A Base , : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V "Collector Emitter Sustaining Voltage : BDX33 Vcer(sus) lc= 100mA, lB=0 45 V : BDX33A Rbe = 100Q 60 V : BDX33B 80 V : BDX33C 100 V -
OCR Scan
transistor bdx33c 100MA 45 V NPN transistor bdx33
Abstract: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These , mAdc · · · VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C Low , Voltage BDX33B, BDX34B BDX33C, BDX34C Collector-Base Voltage BDX33B, BDX34B BDX33C, BDX34C Symbol VCEO , , 2011 October, 2011 - Rev. 13 1 Publication Order Number: BDX33B/D BDX33B, BDX33C (NPN , (VCB = rated VCBO, IE = 0) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) BDX33B/BDX34B BDX33C/BDX34C ON Semiconductor
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33c marking
Abstract: products space space space BDX33C Related Links Products groups NPN Epitaxial Silicon Transistor Analog and , .Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C VCEO Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) *Collector Current (Pulse) Base Current , : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B Fairchild Semiconductor
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BDX33 application notes BDX33CTU
Abstract: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , (unless otherwise noted) RATING BDX33 BDX33A Collector-base voltage ( lE = 0) BDX33B BDX33C BDX33D BDX33 BDX33A Collector-em itter voltage ( lB = 0) BDX33B BDX33C BDX33D Em itter-base voltage Continuous , all parameters. BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS AUG UST 1993 , BDX33A Iq = 100 mA lB = 0 (see Note 3) BDX33B BDX33C BDX33D V CE = V CE = V CE = V CE = breakdown -
OCR Scan
transistor BDX34 65
Abstract: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR , MAXIMUM RATINGS C haracteristic Collector Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Current (DC) Collector Current (Pulse) Base , : BDX33A : BDX33B : BDX33C ` Collector Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C ` Collector Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C Collector Cutoff Current : BDX33 -
OCR Scan
Abstract: ON Semiconductor ) NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C , Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc , Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C PD, POWER DISSIPATION (WATTS) 80 , _C TC = 100_C ICBO TC = 25_C TC = 100_C mAdc ICEO BDX33B/BDX34B BDX33C/BDX34C mAdc ON Semiconductor
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Abstract: transistor parameters. Pow er I NNOV A T I ONS ¥ 0 3-93 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN , B0X33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright® 1997, Power , BDX33C BDX33D 8DX33 BDX33A Coflector-emitter voltage Ob = BDX33B BDX33C BDX33D Emitter-base voltage , indude testing of alt parameters. I NNOVAT I ONS P 3-91 BDX33, BDX33A, BDX33B, BDX33C, BDX33D , (see Note 3) BOX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D V VCE = 30 V VCE = 30 V -
OCR Scan
8DX33B BOX33 BDX338 TRANSISTOR BDX330 BOX33D 8DX330 T1903- B0X330 T1S130AB
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