NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: frequency use bipolar transistor 2SJ P channel Field Effect Transistor 2SK N channel Field Effect , Small Signal Transistor Type Designation 1. Type Designation in Accordance with JIS and JEITA This type designation applies to small signal transistor components, based on Japan Industry Standard (JIS C7012 C7012). The number of the basic type transistor should be registered in Electronic Device , following manner. 1st item Type of semiconductor 2SA PNP High frequency use bipolar transistor 2SB PNP ... | Original |
6 pages, |
JAPANESE TRANSISTOR 2SC 2SK type data book transistors 2SA 2sa transistor chart C7012 transistor 2SA data book JAPANESE TRANSISTOR 2SC 2010 JAPANESE 2SC TRANSISTOR 2010 Transistor 2SA 2SB 2SC 2SD JAPANESE TRANSISTOR 2SC DATA BOOK 2010 transistor 2sk JAPANESE 2SC TRANSISTOR DATA BOOK 2010 datasheet abstract |
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| Abstract: EIAJ-registered NPN transistor 2SD EIAJ-registered NPN Darlington transistor 2SK EIAJ-registered , TO-220/TO-3P fast-recovery rectifier SFPB SMD Schottky diode FN NPN transistor SFPL SMD ultra-fast recovery rectifier FP PNP transistor SFPM SMD rectifier HVR High-voltage , power supply SSB Sanken Schottky barrier diode STA Sanken transistor array STR Sanken transistor regulator SUM Sanken switching power supply TF Thyristor, reverse blocking (SCR ... | Original |
12 pages, |
SN 76006 transistor 2sk str 6676 STR D 5707 STR w 6757 ca 3161 e IC smd diode 513 str 6706 2sc 8187 str f 6709 40503 triac STR 6757 TRANSISTOR J 5804 2SD 5703 datasheet abstract |
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| Abstract: Part Number Format (transistors and accessories) 1.1 Transistors 2SK 2232 A 1st (example) 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below. 1st character group Type 2SJ P-channel field effect transistor 2SK N-channel field effect transistor 2nd group: serial numbers starting at 11 (JEITA) 3rd group: suffix , consideration the RDS (ON) at high temperatures. Table 2.1 shows a comparison between bipolar transistor and ... | Original |
66 pages, |
2SK1352 2SK2231 2SK2543 2SK2610 2SK2782 2SK2837 equivalent TPC8009-H equivalent 2sk940 2SK2615 2SK135 2SK2698 equivalent transistor TO 2sk 2SK2837 equivalent 2sk2837 mosfet datasheet abstract |
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| Abstract: Part Number Format (transistors and accessories) 1.1 Transistors 2SK 2232 A 1st (example) 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below. 1st character group Type 2SJ P-channel field effect transistor 2SK N-channel field effect transistor 2nd group: serial numbers starting at 11 (JEITA) 3rd group: suffix , consideration the RDS (ON) at high temperatures. Table 2.1 shows a comparison between bipolar transistor and ... | Original |
83 pages, |
2sk mosfet 2SK135 2SK1352 2SK2543 2SK2610 2SK2698 2SK2782 2SK2837 equivalent 2sk2837 mosfet TPC8009-H transistor 2SK2698 toshiba transistor 2sk2698 TPC8108 TPCS8201 datasheet abstract |
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| Abstract: manufacture of advanced mixed-signal (analog + digital) integrated circuits. Allegro, an American-managed , temperature range and package style. Also, see Bridge and Half-Bridge Transistor Arrays. 6 , Low-Dropout Regulators Low-Dropout Regulators X X X 8205-xx 8226 + 8405-xx 8205 8226 8405 , 10 ONE SHOT SENSE 2 15  + E2 E1 R C 18 ÷10 GROUND CT 16 VREF REFERENCE RT ÷10  + SENSE 1 RC1 12 ENABLE2 SOURCE DISABLE SOURCE DISABLE ... | Original |
88 pages, |
UDN2917EB STR 6757 2SC 8050 2SC2922 SANKEN STR-S6708 40503 triac str f6654 TRANSISTOR J 5804 3120C 2sc 8187 STR-S6708 schematic diagram AH 503 hall sensor of AH 503 hall sensor datasheet abstract |
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| Abstract: frequency use PNP bipolar transistor 2SK*: Nch field-effect transistor (FET) 2SJ*: Pch , 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending , Transistor Power Transistor Bonding-wire-less design Power Transistor Power Transistor Renesas , VSON-8 Conduction loss (on-resistance) Conduction loss Drive loss 1% 4 Power Transistor ... | Original |
82 pages, |
free transistor equivalent book 2sc h945 transistor ir model HZK 219 transistor h945 smd code FX mosfet datasheet abstract |
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| Abstract: 2SK 1 9 5/UD ^N ^ILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR o FM f- » - i- m o PM Tuner , 2SK19-BL 2SK19-BL 12.0 24.0 996 100MHz On. and NF TEST CIRCUIT Lx : osmmfums 7 + .t 3T MS lOmmjzi if lomm Cl.8mm * Ag PLATED Cu TIKE 3 Turns, 10mm« Dia., 10mm LENGTH 12 : 0.8mm)* -7 + 3.5T lommjtf ; lomm CI. 8mm , OROUP Rs 2SK19 2SK19 - Y ssa ± 5?( 2SK19 2SK19 - OH ìoon t 5% 2SK19 2SK19 - HL 220O± 997 2SK 19 STATIC , 30 50 100 300 500 1000 2000 nfttt f (MHz) 999 2SK 19 S « K â- R as as ai ao5 ao3 ... | OCR Scan |
5 pages, |
OAT 3Z 2SK19BL 220O transistor 2sk 2SK19-BL 2SK19 transistor 2sk19 datasheet abstract |
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| Abstract: • INTERNAL SHORT CIRCUIT CURRENT PROTECTION • OUTPUT TRANSISTOR SAFE AREA PROTECTION • POWER MINI , MAX UNITS Input Voltage Range Tj = 25° C 7.5 40 V V Output Voltage Range V|N-VouT + 5V 5.0 30 V Output Voltage Tolerance VOUT + 3 V < V|N < VouT + 15 V, 5 mA «; (OUT < 350 mA Pd , V (VQUT + 2 5 VI < VIN < Tj = 25°c, Iout " 20° mA, V0UT » '0 V (VOUT + 3 V) < V|N < (VouT + 15 V) X(V0UT> Load ... | OCR Scan |
7 pages, |
IA79 UA78MG A78MG 79MGC mA79MG ma78mg 78MGC MA79MGU1C UA78MGHM 79MG 78MG MA79MG MA78MG A78MG abstract |
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| Abstract: with an external MOS transistor to generate +V1 voltage, which is required for the row driver. Figure , generator 47 This is the clock output for the external n-channel MOS transistor control in the +V1 voltage generator circuit. 48 This is the clock output for the external p-channel MOS transistor , Characteristics LP pulse width = 1000ns, -V1 = VEE + 0.6V, 6X step-up mode application Symbol Parameter , (VDD_PWR-VSS) -3.3 VEM=-2 x (VDD_PWR-VSS) -6.6 VDD_ROW=-3 x (VDD_PWR-9.9 + VSS) + -V1=-4 x (VDD_PWR-VSS ... | Original |
21 pages, |
SSD1730QL3 SSD1730 NLP 5x transistor 2sk vem generator SSD1730 abstract |
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| Abstract: to deliver continuous load currents of up to 500 mA with a maximum input voltage of + 40V for the , positive output voltage + 5.0V to + 30V â- LM79MG LM79MG negative output voltage -30V to -2.6V â- Internal thermal overload protection â- Internal short circuit current protection â- Output transistor safe-area protection , Limited Input Voltage LM78MGC LM78MGC LM79MGC LM79MGC Control Lead Voltage LM78MGC LM78MGC LM79MGC LM79MGC + 40v -40v 0v £ v+ < v0 v0- , V| = V0 +5.0V 5.0 30 V v0 Output Voltage Tolerance (Vo + 3.0V) ... | OCR Scan |
11 pages, |
P04A LM79MG equivalent transistor 2sk lm78mg lm79mgcp LM78MGCP 78MG LM78MG/LM79MG LM78MG LM78MG/LM79MG abstract |
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| 2SK2356-ZJ-E1/E2 2SK2356-ZJ-E1/E2 single more. DESCRIPTION The 2SK2355, < , 2SK2356-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2355: R DS(on) = 1.4 Ohm MAX. {V GS = 10 V, I D = 2.5 A) 2SK2356: R DS(on) = 1.5 Ohm MAX. {V GS = 10 V, I D = 2.5 A www.datasheetarchive.com/files/nec/mosfet/product/2sk2356-.htm |
NEC | 02/02/2000 | 6.36 Kb | HTM | 2sk2356-.htm |
| 2SK2359 2SK2359 single more. DESCRIPTION The 2SK2359, < , 2SK2360-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2359: R DS(on) = 0.9 Ohm MAX. {V GS = 10 V, I D = 4.0 A) 2SK2360: R DS(on) = 1.0 Ohm MAX. {V GS = 10 V, I D = 4.0 A) Low C iss C iss = 1050 pF TYP www.datasheetarchive.com/files/nec/mosfet/product/2sk2359.htm |
NEC | 02/02/2000 | 6.35 Kb | HTM | 2sk2359.htm |
| 2SK2365-S 2SK2365-S single more. DESCRIPTION The 2SK2365, < , 2SK2366-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2365: R DS(on) = 0.5 Ohm MAX. {V GS = 10 V, I D = 0.5 A) 2SK2366: R DS(on) = 0.6 Ohm MAX. {V GS = 10 V, I D = 0.5 A www.datasheetarchive.com/files/nec/mosfet/product/2sk23650.htm |
NEC | 02/02/2000 | 6.63 Kb | HTM | 2sk23650.htm |
| 2SK2355 2SK2355 single more. DESCRIPTION The 2SK2355, < , 2SK2356-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2355: R DS(on) = 1.4 Ohm MAX. {V GS = 10 V, I D = 2.5 A) 2SK2356: R DS(on) = 1.5 Ohm MAX. {V GS = 10 V, I D = 2.5 A) Low C iss C iss = 670 pF TYP www.datasheetarchive.com/files/nec/mosfet/product/2sk2355.htm |
NEC | 02/02/2000 | 6.35 Kb | HTM | 2sk2355.htm |
| 2SK2356-S 2SK2356-S single more. DESCRIPTION The 2SK2355, < , 2SK2356-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2355: R DS(on) = 1.4 Ohm MAX. {V GS = 10 V, I D = 2.5 A) 2SK2356: R DS(on) = 1.5 Ohm MAX. {V GS = 10 V, I D = 2.5 A www.datasheetarchive.com/files/nec/mosfet/product/2sk23560.htm |
NEC | 02/02/2000 | 6.35 Kb | HTM | 2sk23560.htm |
| 2SK2360-ZJ-E1/E2 2SK2360-ZJ-E1/E2 single more. DESCRIPTION The 2SK2359, < , 2SK2360-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2359: R DS(on) = 0.9 Ohm MAX. {V GS = 10 V, I D = 4.0 A) 2SK2360: R DS(on) = 1.0 Ohm MAX. {V GS = 10 V, I D = 4.0 A www.datasheetarchive.com/files/nec/mosfet/product/2sk2360-.htm |
NEC | 02/02/2000 | 6.36 Kb | HTM | 2sk2360-.htm |
| 2SK2355-S 2SK2355-S single more. DESCRIPTION The 2SK2355, < , 2SK2356-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2355: R DS(on) = 1.4 Ohm MAX. {V GS = 10 V, I D = 2.5 A) 2SK2356: R DS(on) = 1.5 Ohm MAX. {V GS = 10 V, I D = 2.5 A www.datasheetarchive.com/files/nec/mosfet/product/2sk23550.htm |
NEC | 02/02/2000 | 6.35 Kb | HTM | 2sk23550.htm |
| 2SK2366-S 2SK2366-S single more. DESCRIPTION The 2SK2365, < , 2SK2366-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2365: R DS(on) = 0.5 Ohm MAX. {V GS = 10 V, I D = 0.5 A) 2SK2366: R DS(on) = 0.6 Ohm MAX. {V GS = 10 V, I D = 0.5 A www.datasheetarchive.com/files/nec/mosfet/product/2sk23660.htm |
NEC | 02/02/2000 | 6.63 Kb | HTM | 2sk23660.htm |
| 2SK2355-ZJ-E1/E2 2SK2355-ZJ-E1/E2 single more. DESCRIPTION The 2SK2355, < , 2SK2356-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2355: R DS(on) = 1.4 Ohm MAX. {V GS = 10 V, I D = 2.5 A) 2SK2356: R DS(on) = 1.5 Ohm MAX. {V GS = 10 V, I D = 2.5 A www.datasheetarchive.com/files/nec/mosfet/product/2sk2355-.htm |
NEC | 02/02/2000 | 6.36 Kb | HTM | 2sk2355-.htm |
| 2SK2366 2SK2366 single more. DESCRIPTION The 2SK2365, < , 2SK2366-Z is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES Low On-state Resistance 2SK2365: R DS(on) = 0.5 Ohm MAX. {V GS = 10 V, I D = 0.5 A) 2SK2366: R DS(on) = 0.6 Ohm MAX. {V GS = 10 V, I D = 0.5 A) Low C iss C iss = 1600 pF TYP www.datasheetarchive.com/files/nec/mosfet/product/2sk2366.htm |
NEC | 02/02/2000 | 6.63 Kb | HTM | 2sk2366.htm |