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toshiba nand flash 1997

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology , 5 Generations with One Clean Room [um] 0.35 [TOSHIBA] -Trench Capa. -KrF Litho -STI/CMP 0.32 0.25 , n TOSHIBA 64M/128M/256M 64M/128M/256M SYNCHRONOUS DRAM Totally Compatible between 3 Generations of Products , High End Desktop Volume Desktop Low Cost Desktop 1994 1995 1996 1997 1998 1999 , PC66 EDO 9 DRAM Market n TOSHIBA SYNCHRONOUS DRAM ROAD MAP ES CS MP Product ... Toshiba
Original
datasheet

160 pages,
2674.25 Kb

nand flash dqs LGA SGSThomson Book SO-DIMM 144-pin MCP 1g nand toshiba film hot APPLE A5 CHIP TC551864A TC55257DPL equivalent TC554102 jeida 38 norm sgs-thomson power supply Toggle DDR NAND flash TC518512 TC551001 equivalent TC518129 TC518128 toshiba toggle mode nand TEXT
datasheet frame
Abstract: device supports operation in both 5 V and 3.3 V, and supports both Toshiba and Samsung NAND types of flash memory devices. · Supports Toshiba/Samsung NAND flash memory · PCMCIA-ATA/IDE-ATA , SSI 36C3950 36C3950 PCMCIA-ATA/IDE Flash Drive Controller ® Prototype January 1997 DESCRIPTION FEATURES The SSI 36C3950 36C3950 ATA FLASH Controller is a CMOS monolithic integrated circuit housed in a 144 , Mbit Samsung and Toshiba flash devices OTHER FEATURES · · High speed data transfer between ... Texas Instruments
Original
datasheet

2 pages,
48.04 Kb

samsung NAND flash Flash drive controller 80C51 80C188 samsung NAND 36C3950 TEXT
datasheet frame
Abstract: MBIT (2 M x 8 BITS) CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 , contained herein is subject to change without notice. 1997 08-12 - 1/36 TOSHIBA BLOCK DIAGRAM , Vcc - 0.2 V Iqh = - 4 0 0 ^ Iql = 2.1 mA V0L = 0.4 V 1997 08-12 - 3/36 TOSHIBA TC5816BFT TC5816BFT , 1TTL & CL (100 pF) 1997 08-12 - 4/36 TOSHIBA (1) Transition time (frr) = 5 ns (2) When CLE ... OCR Scan
datasheet

36 pages,
720.01 Kb

TC5816BFT TEXT
datasheet frame
Abstract: MBIT (2 M x 8 BITS) CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. Tne , every component. 1997 08-12 - 2/36 TOSHIBA VALID BLOCK (1) SYM BO L N vb PARAM ETER Valid , 1997 08-12 - 3/36 TOSHIBA TC58V16BFT TC58V16BFT AC CHARACTERISTICS AND OPERATING CONDITIONS (Ta = 0 , ) 1997 08-12 - 4/36 TOSHIBA (1) Transition time (frr) = 5 ns TC58V16BFT TC58V16BFT (2) The CE High to ... OCR Scan
datasheet

36 pages,
726.97 Kb

TC58V16BFT TEXT
datasheet frame
Abstract: Physics 1997 08-12 23/36 - TC58V16BFT TC58V16BFT TOSHIBA Erase Operation Figure 18 shows the NAND , 16 MBIT (2 M X 8 BITS) CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K , is subject to change without notice. 1997 08-12 1/36 - TC58V16BFT TC58V16BFT TOSHIBA BLOCK DIAGRAM , component. 1997 08-12 2/36 - TC58V16BFT TC58V16BFT TOSHIBA VALID BLOCK (1) SYMBOL TC58V16 TC58V16 PARAMETER ... OCR Scan
datasheet

36 pages,
560.12 Kb

TC58V16BFT TEXT
datasheet frame
Abstract: According to Toshiba, the inventor of Flash memory: "the 10,000 cycles of MLC NAND is more than sufficient , kingston.com/flash 1.0 Flash Memory: Empowering A New Generation of Flash Storage Devices Toshiba invented , useful life of the card."1 performance leaders in the industry. For USB Flash drives, Toshiba , America Electronic Components, Inc. Releases Performance Research on MLC NAND Flash Memory for Consumer , NAND Flash Technologies Unlike Dynamic Random Access Memory (DRAM), Flash memory is non-volatile ... Kingston Technology
Original
datasheet

14 pages,
507.63 Kb

kingston data traveller kingston microsd 4gb kingston MMC mobile card SDHC MONOLITHIC Toshiba microSD Card 2GB mmc kingston kingston usb datatraveler SDHC memory reader flash drive kingston kingston usb memory kingston sd 2GB kingston 4gb usb flash drive kingston datatraveler kingston microsd kingston usb musical fountain microsd chip manufacturer Kingston sdhc sd card kingston 4gb Kingston CF TEXT
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Abstract: -volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare , ) V0L 0.4 V 8 1997 08-12 - 3/36 TOSHIBA TC5816BDC TC5816BDC AC CHARACTERISTICS A N D O , document. 1997 08-12 - 5/36 TOSHIBA T IM IN G D IA G R A M S TC5816BDC TC5816BDC Latch Timing , tC L H 1997 08-12 - 7/36 TOSHIBA Serial Read Cycle Timing Diagram TC5816BDC TC5816BDC Status Read Cycle Timing Diagram R/B f V|h o r V|L 1997 08-12 - 8/36 TOSHIBA Read Cycle (1 ... OCR Scan
datasheet

36 pages,
735.65 Kb

TC5816BDC TEXT
datasheet frame
Abstract: Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 bytes X 16 pages X , n g e w ith o u t notice. 1997 04-25 - 1/36 TOSHIBA TC58V16BDC TC58V16BDC BLOCK D IA G R A M V , tested fo r every co m p o n e n t. 1997 04-25 - 2/36 TOSHIBA TC58V16BDC TC58V16BDC V A L ID B L O C , t o f (R/B) Pin V 0L = 0.4 V - 8 - mA - 1997 04-25 - 3/36 TOSHIBA , 8 V 1 TTL & CL (100 pF) 1997 04-25 - 4/36 TOSHIBA TC58V16BDC TC58V16BDC (1) Transition time ... OCR Scan
datasheet

36 pages,
810.92 Kb

TC58V16BDC TEXT
datasheet frame
Abstract: ) Endurance Read unlimited 1,000,000 write/erase cycles based on Toshiba NAND flash components 100,000 write/erase cycles based on Samsung NAND flash components Improved endurance by controller media , . 16.6 MBytes/sec burst read/write M-Systems' family of flash disks has been used since 1997 as a mass , IDE 3000 2.5" Flash Disk Best Price-Performance 2.5" IDE Solid-State Disk Technology Overview M-Systems' IDE 3000 IDE 2.5" flash disk is a state-of-the-art, solid-state disk based on flash technology ... M-Systems
Original
datasheet

2 pages,
178.59 Kb

M-Systems M-Systems ata M-Systems FFD mtbf driver robot control Samsung Nand gb SR-332 toshiba nand M-Systems FFD Ultra-Wide SCSI M-Systems ide-3000 toshiba Nand flash TEXT
datasheet frame
Abstract: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816BDC TC5816BDC SILICON GATE CMOS 16 MBIT (2 M X 8 BITS) CMOS NAND FLASH E^PROM The TC5816 TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The , Enable Chip Enable Power Supply (5.0 V) 961001EBA1 961001EBA1 ©TOSHIBA is continually working to improve the , the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and ... OCR Scan
datasheet

36 pages,
1088.47 Kb

TC5816BDC TEXT
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Archived Files

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STMicroelectronics 01/04/1998 563.13 Kb TXT whatsnew.txt
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NEDIS 28/02/2001 1026.63 Kb ZIP price-11.zip
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NEDIS 28/02/2001 1026.63 Kb ZIP price-13.zip
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NEDIS 22/02/2001 1894.94 Kb ZIP price-04.zip