500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
X28HC256JIZ-15 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256JZ-12T1 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256PIZ-12 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256SIZ-90 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256JIZ-15T1 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil
X28HC256JZ-15 Intersil Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM; PDIP28, PLCC32, SOIC28; Temp Range: See Datasheet visit Intersil

toshiba 256K sram

Catalog Datasheet MFG & Type PDF Document Tags

um61256

Abstract: hynix hy57v281620 ~3.6Volts SRAM 256Kx16, 2.5~3.6V SDRAM 256Kx16 FLASH 1MX16, 2MX8 FLASH 256K x8, 5Volts Dual Bank 2Mx8 , SRAM 256K x 36 FT Sync Burst SRAM 256k x 18 FT ZeBL Sync SRAM 256K x 36 FT ZeBL Sync SRAM SRAM 256Kx18 256K x 36 PL ZeBL Sync SRAM 256K x 36 PL Sync Burst SRAM 2M x 18 PL ZeBL Sync SRAM 512K x 36 , SRAM 128Kx36 LV TTL DBA SRAM 256Kx18 256k x 18 FT ZeBL Sync SRAM 256K x 36 PL ZeBL Sync SRAM 256K x 36 PL ZeBL Sync SRAM 256K x 36 FT ZeBL Sync SRAM 512K x 18 PL ZeBL Sync SRAM 512K x 18 PL ZeBL
AMIC Technology
Original
um61256 hynix hy57v281620 hy57v641620 cross reference UM611024 28F160S3 Samsung EOL PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B

PM25LV040

Abstract: um61256 Volts SRAM 128Kx16, 2.5~3.6Volts SRAM 256Kx16, 2.5~3.6V FLASH 256K x8, 5Volts Dual Bank 2Mx8 / 1Mx16 , SRAM 1M x 18 PL ZeBL Sync SRAM 1M x 36 PL Sync Burst SRAM 256K x 36 FT Sync Burst SRAM 256k x 18 FT ZeBL Sync SRAM 256K x 36 FT ZeBL Sync SRAM SRAM 256Kx18 256K x 36 PL ZeBL Sync SRAM 256K x 36 PL , SRAM 128K x 36 PL Sync Burst SRAM SRAM 128Kx36 LV TTL DBA SRAM 256Kx18 256k x 18 FT ZeBL Sync SRAM 256K x 36 PL ZeBL Sync SRAM 256K x 36 PL ZeBL Sync SRAM 256K x 36 FT ZeBL Sync SRAM 512K x 18 PL
AMIC Technology
Original
PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A PD442012L-XB PD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D

toshiba 32k*8 sram

Abstract: M5M23C100 x8 PSEUDO SRAM Density 1M Org. 12 8K X8 Samsung KM681001 IDT71024 Hitachi HM658128 Toshiba , MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Org. X X FUNCTION GUIDE Density 64 K 256K , KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 Toshiba , Nibble S. Column X 4 F. Page S. Column 3.2 VIDEO RAM Feature Org. X Density 256K 1M Samsung 4 KM424C64 KM424C256 KM424C257 KM428C128 Toshiba NEC (¿PD42264 Hitachi H M 53461 HM
-
OCR Scan
KM4164 TC51256 TC51258 TC51464 TC511000 HM514402 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A MB832001 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466

93c46 atmel

Abstract: uPD23C4000 Samsung KM424C64 Micron MT42C4064 Density 256K CROSS REFERENCE GUIDE Toshiba p I* NEC uPD41264 , . Org. SAM SUNG HITACHI SONY CROSS REFERENCE GUIDE TOSHIBA MITSUBISHI NEC 64K 256K 512K , TC551402 r _ MT5C256KX16 55 ELECTRONICS MEMORY ICs BiCMOS SRAM Den. 256K 6 , IDT71256 256K 128K 4(With OE)-R 8-R IDT71B024 Specialty SRAM Den. 1M Org. 256K 64 K X X , TM S44C250 SMJ44C250 128Kx8 1M Extended 256K x 4 KM424C257 MT42C4256 MT42C4255 TC528126A
-
OCR Scan
KM628512 93C46L 93C56L KM28C64B 93c46 atmel uPD23C4000 sony Cross Reference HN62404P atmel 93c66 PD41264 HM53461 TMS4461 256KX4 KM428C64 KM424C256A

TC55B4257

Abstract: 93C46L CROSS REFERENCE GUIDE Density 256K Toshiba NEC uPD41264 uPD42264 Hitachi HM53461 (2) Ti , 55 ELECTRONICS MEMORY ICs BiCMOS SRAM Den. 256K CROSS REFERENCE GUIDE Org. 64K X 4(W , -R IDT71B024 Specialty SRAM Den. 1M Org. 256K X 4 64K X 18 SMAMSUNG KM741006 KM 718B86 KM 718B90 , 54 ELECTRONICS MEMORY ICs 3.2 Static RAM CROSS REFERENCE GUIDE Low power SRAM Den. 64K 256K 512K 1M 4M Org. 8Kx8 32Kx8 64Kx8 128Kx8 512K 8 SAMSUNG KM6264BL/BL-L KM62256CL/CL-L
-
OCR Scan
TC55B4257 atmel 93c57 Hitachi SRAM cross reference TC55B465 upd23c8000 KM23C8001B TC524256 TC524256A TC524256B TC524257 PD42273 HM534251

um61256

Abstract: um611024 x 36 PL Sync Burst SRAM 128K x 36 PL Sync Burst SRAM SRAM 256Kx18 256k x 18 FT ZeBL Sync SRAM 256K x 36 PL ZeBL Sync SRAM 256K x 36 PL ZeBL Sync SRAM 256K x 36 FT ZeBL Sync SRAM 512K x 18 PL ZeBL Sync SRAM 512K x 18 PL ZeBL Sync SRAM 512K x 18 FT ZeBL Sync SRAM 256K x 36 PL Sync Burst SRAM 256K x 36 PL Sync Burst SRAM 256K x 36 FT Sync Burst SRAM 256K x 36 FT Sync Burst SRAM 512K x 16 PL , PL Sync Burst SRAM 256K x 36 PL Sync Burst SRAM 512K x 36 FT Sync Burst SRAM 1M x 36 FT Sync Burst
AMIC Technology
Original
SRAM 64KX8 5V TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 IDT72V245 k4s561632 PD4504161 28F160S3/B3/C3 AM29DLV1XD AM29F002B AM29F010 AM29F010B

TOSHIBA LABLE

Abstract: TC8830F 12 16 3 pes 6 12 18 24 4 pes 8 16 24 32 256K S-RAM 1 pc 8 16 24 32 2 pes 16 32 48 64 3 pes 24 48 72 96 4 pes 32 64 96 128 Maximum 4 units of 64K S-RAM of 256K S-RAM can be connected directly to the TC8830F. To connect 64K S-RAM, set the 256K pin at "L" level, and to connect 256K S-RAMs, fix the , level of the 256K pin. ¡b â'žâ'ž^.integrated circuit toshiba TECHNICAL DATA TC8830F 5.1.10 , Data area S-RAM 25" TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC8830F -Reproducing in direct
-
OCR Scan
TOSHIBA LABLE TA7368 w5930 TCS830F marking code adi label cs830f TPOC01 23HHHH0 12KHZ EW6UNB432 TA7368P TC55257

NEC D2732

Abstract: 41C1000 256K x 1(256K) 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 , 1(4M) 814100 71C4100 514100 514100 4C1004 44100 256K x 16(4M) 814260 71C4260 , DENSITY MCM TEXAS SAMSUNG INSTRUMENTS KM TMS NEC UPD OKI MSM 256K x 1(256K) 6256 41256 41256 1M x 1(1M) 511000 421000 511000 41C1000 4C1024 511000 256K x 4(1M
-
Original
27C32 27C32Q NEC D2732 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 4C4256 71C4400 4C4001 4C16257 71C4800 4C8512

al 232 nec

Abstract: TC55B4257 Density 256K Toshiba NEC iiP D 41264 p PD42264 Hitachi HM53461 (2) Ti TMS4461 512K , ELECTRONICS MEMORY ICs 5. Static RAM * Low Power SRAM Den. 64K 256K Org. 8K x8 3 2 K x8 SAMSUNG , Pseudo SRAM Den. 1M Org. 128K x8 SAMSUNG KM658128/L/I-L/ID/ID-L HITACHI TOSHIBA NEC juPD428128A/AL/AL-L OKI MSM548128 MOTOROLA MCM518128 HM658128A/A17AL-L TC518128A/AL/AL-L BiCMOS SRAM Den. 256K Org , KM68BV4002 256K X 16 KM616B4002 KM616BV4002 CM CO CO HITACHI HM6708H CYPRESS CY7B195 TOSHIBA
-
OCR Scan
TC514256 TC514280B TC5116100 PD23C8000 al 232 nec NM9306 eeprom Cross Reference D41264 NM9307 HN28C256 KM48C512 KM49C512 KM416C256 KM418C256 KM41C16000 KM44C4000

toshiba toggle mode nand

Abstract: TC518128 Standard SRAM n TOSHIBA 256K BIT E/R CMOS STATIC RAM FEATURES Single Power Supply Voltage : 5V+ 10 , 46 Standard SRAM n TOSHIBA LOW POWER STATIC RAM Capacity config. 55ns TC55257DPL/DFL /DFTL , Availability of each product to be confirmed through the local office. 47 Standard SRAM n TOSHIBA LOW , office. : Under Development 48 Standard SRAM n TOSHIBA LOW POWER STATIC RAM Process , 5V 256K / 1M / 4M SRAM 120 - 150ns (2.7V) 1M / 2M SRAM 3V 85ns (2.7V) 1M / 2M / 4M SRAM
Toshiba
Original
toshiba toggle mode nand TC518128 TC518129 551664 TC551001 equivalent TC518512 64M128M 100MH 200MH 500/600MH 800MH 400MH

MBI5024

Abstract: dm13c LED Driver IC for Display Org. Chiplus Macroblock SITI Toshiba Dallas Maxim , for Lighting Org. Chiplus Macroblock SITI Toshiba Dallas Maxim STMicro Allegro , / A 256K / 32Kx8 CS18LV02563 series BS62LV256 series IS62LV256AL K6T0808V1D HY62KT08081E CY62256VN series M5M5256D 256K / 32Kx8 CS18LV02565 series BS62LV256 series , IS62WV5128ALL / BLL 28K6T4008U1B/C HY62U8400A CY62148EV30 series R1LV0408C Low Power SRAM Den
-
Original
MBI5024 MBI5026 TB62706 A6276 MBI5167 DM115B dm13c macroblock MBI5024 MBI6030 K4S641632H CS18LV4096 CS8816 CS8826 DM134 DM135

TC55B8128

Abstract: TC534000AF a tu re 128K X 8 K M 4 28 C 1 28 2 56 K X 4 K M 4 24 C 2 57 256K X 4 K M 4 24 C 2 56 TC 524256 CROSS REFERENCE GUIDE D ensity 256K Org. 64K X 4 Sam sung K M 4 24 C 6 4 Toshiba NEC , 5 1 2 K M 4 16 C 2 56 K M 4 18 C 2 56 K M 4 1C 1 6 00 0 K M 4 4C 4 0 00 Toshiba T C 51256 T C , 2 0 00 KM M 5362000 KM M 5401000 KM M 5402000 Toshiba TH M 82500 TH M 92500 TH M 81000 TH M , 53 8 1 23 TM S 48C 121 M 5 M 48 2 1 28 TM S 44C 251 M 5 M 44 2 2 56 3.4 Static RAM Slow SRAM
-
OCR Scan
HN62308BP TC55B8128 TC534000AF KM23C4000AG hitachi cross TC551632 TC511001 TC514101 514170B 514280B B0141O2 PD41256

41C1000

Abstract: fujitsu 814100 41C 40 02 K M 44C 10 00 KM 44C1002 Toshiba Hitachi Fujitsu NEC Oki M SM 3764 1 1 , KMM5401000A KM M 5402000A Organization 256 K 256 K 1M 1M X X X X Toshiba TH M 82500A TH M 92500A TH M , Samsung KM424C64 KM 424C256 KM 424C257 KM 428C128 Toshiba NEC t í PD 42264 Hitachi HM 53461 , 42274 X T M S4 4 C 2 5 1 M 5M 44225 6 M5M 482128 X 3 .4 3.4.1 SRA M Slow SRAM Samsung KM6264B/BL/BL-L KM62256ALI KM62256A/AL/AL-L HM62256/UL-L KM62256BUBL-L Hitachi Sony NEC Toshiba Fujitsu
-
OCR Scan
41C256 fujitsu 814100 TC 55464 toshiba hn623257 816b 658128 HN62304 41C257 41C258 41C464 41C466 44C256

41C464

Abstract: 41C1000 (xPD42275 M 5 M 44225 6 M 5M 48212 8 3.4 Static RAM Slow SRAM Cross Reference Density 64 K 256K , 42 M EM ORY ICs Fast SRAM Density 64K Organization 16Kx4 16Kx4 (With OE) 8Kx8 256K 256K x 1 , CXK541000 MT5C1006 IOT71024 MCM6226W CXK581020 BiCM O S SRAM Density 256K Organization 64Kx4(W ith OE , Samsung KM23C256 NEC Hitachi CRO SS REFERENCE GUIDE Density Package 256K 28 DIP Toshiba Sharp , 44C1000 KM 44C1002 KM 48C512 KM 49C512 KM 416C256 KM 418C256 KM 41C16000 KM 44C4000 Toshiba TC 51256 TC
-
OCR Scan
424170 NEC CY70199 MB81417 oki msm IOT7164 424c64 41C1002 44C258 41C4000 41C4002 TC511002 TC514102

TIC31

Abstract: TC8830F below. 64K S-RAM 256K S-RAM 31 This Material Copyrighted By Its Respective Manufacturer TOSHIBA , 2 4 6 8 2 pes 4 8 12 16 3 pes 6 12 18 24 4 pes 8 16 24 32 256K S-RAM 1 pc 8 16 24 32 2 pes 16 32 48 64 3 pes 24 32 48 72 96 4 pes 64 96 128 Maximum 4 units of 64K S-RAM of 256K S-RAM can be connccted directly to the TC8830F. To connect 64K S-RAM, set the 256K pin at "L" level, and to connect 256K , TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC8830F 5.6 S-RAM connecting method To connect 64Kbit S-RAM
-
OCR Scan
TIC31 MIPI CPI TFK U 111 B TFK 526 28 tfk 518 ALL-07 .dat 53I52I51 50M9I48 12KH2 1I12I13 TCS5257 983WD

lh62256

Abstract: 128k x8 SRAM TSOP Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns , Fast CMOS 4M x1, 1M x4, 512K x8, 256K x16 Hitachi Samsung Cypress Toshiba NEC , GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed(s) -7, -8 , uPD431000 W24100 HY628100B CXK581001 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sony , 32 32 32 32 32 32 EOL Dec. '01 Discontinued 4Meg Low Power Bytewide 512K x8, 256K
Hitachi
Original
CY62256 HM628512 HM62V8512 K6T4008C1 HY628400 128k x8 SRAM TSOP upd431000-70 hm62v16512 Hitachi HM628512 EOL CY7C1049 hm62256 HM62256 K6T0808C1 PD43256 W24257 HM628128

CSB512

Abstract: TC8830AF . 256K 42 In None In None Input pin for SRAM capacity select. R/W 43 Out Out Read or write strobe , 000FFH 07FFFH OFFFFH 17FFFH 1FFFFH Fig.5.14 Memory map (In case of 256K SRAM) 336 â  ^7241 DQ2SQ2Q , RAM 3 RAM 4 256K SRAM Index area >â  Data area Fig.5.24 Memory map in the LABEL INDEX MODE , SRAM (256K) Address register Index area Data area (D The index register addresses an index area of , ï»¿â  cim724ti 0024^4 =314 «Toss TC8830AF-1 TOSHIBA (UC/UP) b4E J> * 1. GENERAL The TC8830AF
-
OCR Scan
CSB512 tc8830 3si1 AN 15525 555555555555555555555555V5555555 TC8830AF-2 TC8830AF-68 0G25D 67-4-BS TC8830AF-69

CYPRESS SAMSUNG CROSS REFERENCE

Abstract: SRAM 64KX8 5V Low Power & Normal SRAM Cross Reference Guide Part No. Density (bits) Org. Voltage Access , *.DIP/S:SOP W24L257,S 256K 32Kx8 3.3V 70 LL, LE 28 *.DIP/S:SOP W24257AS,Q 256K 32Kx8 5V CYPRESS UTRON IDT MOSEL CYPRESS ICSI(ISSI) UTRON BSI 35 - 28 S:SOP/Q:STSOP W24257,S,Q 256K 32Kx8 5V 70 LL, LE 28 *.DIP/S:SOP/Q:STSOP W24256S 256K 32Kx8 5V 70 L, LL 28 S:SOP W24256S W24512AS W24LO1S,T 256K 512K
Winbond Electronics
Original
V62C51864 K6T080C1D UT621024 TC551001C CYPRESS SAMSUNG CROSS REFERENCE sram cross reference winbond SRAM SAMSUNG Cross Reference DIP SOP W2465 W24L11S CY6264 UT6264 IDT7164L

smart modular

Abstract: SM332Q4A0 + 1 dirty bit 8 3 3 = 3.3V/ Stondord Power 4 = Mixed Volt- X SRAM Vend»/ B = Toshiba C = , · Telecom & Industrial SRAM Modules · Custom designs available SMART Modular Technologies QUICK REFERENCE GUIDE: 12 CACHE SRAM MODULES CACHE SIZE CACHE TYPE SPEED PART NUMBER DIMENSIONS L x H x , SRAM MODULES SM21664 24 bit 1/0 32 bit 1/0 SM224256Z SM23264Z SM232128Z SM332E8Â0N5XUUU SM232256Z , 64K X 16 256K X 24 64K X 32 128K X 32 128K X 32 256K X 32 256K X 32 256K X 32 32K X 32 64K X 32 128K X
-
OCR Scan
smart modular SM332Q4A0 SM332Q4 512KB 256KB SM364SCSP83XI15 SM364SCSPB3XI15 SM364TCSP83XI15 SM364T8A083XI15

M25P08

Abstract: MD2800-D08 Microelectronics Atmel Intel Winbond MTP/OTP/UV-EPROM 256K 5V 8 SST27SF256 AM27C256 , -55-4C-EK AM29F002NT/B-70/90-PC AMD 256K x 8 5.0V-only 70, 90 Boot Block Flash PDIP SST39SF020-70/90-4C-PH AM29F002NT/B-70/90-JC AMD 256K x 8 5.0V-only 70, 90 Boot Block Flash PLCC , size AM29F002NT/B-70/90-EC AMD 256K x 8 5.0V-only 70, 90 Boot Block Flash TSOP , , software command, different sector size AM28F020-70/90-PC AMD 256K x 8 12V/ 5V 70, 90
Silicon Storage Technology
Original
M25P08 MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 SST39SF512 SST29EE512 AM28F512 M29F512 AT49F512 AT29C512
Showing first 20 results.