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toshiba transistor k2698

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 DC-DC , - Reverse recovery charge - 4.3 - uC Marking TOSHIBA K2698 Part No. (or , Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C TOSHIBA , maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with , products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the Toshiba
Original
TOSHIBA K2698 K2698 TOSHIBA transistor k2698 K2698 transistor toshiba transistor 2sk2698 2-16C1B
Abstract: 2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 DC-DC , - C Marking TOSHIBA K2698 Part No. (or abbreviation code) Lot No. A line indicates , 3) EAR 15 mJ TOSHIBA Channel temperature Tch 150 °C Weight: 4.6 g (typ , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 Toshiba
Original
Abstract: 2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 DC-DC , recovery charge - 4.3 - uC Marking TOSHIBA K2698 Part No. (or abbreviation code , Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA Weight: 4.6 g (typ.) Drain current , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 Toshiba
Original
transistor 2SK2698 2sk2698 transistor
Abstract: 2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 DC-DC , underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] TOSHIBA K2698 , °C DC Drain current 1. GATE JEDEC JEITA TOSHIBA 2-16C1B Weight: 4.6 g , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 Toshiba
Original
Transistor EAR - 3
Abstract: TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M O SV ) 2SK2698 j , r: = 9.Fi0C l JEDEC EIAJ TOSHIBA W eight : 4.6g SC-65 2-16C1B Single Pulse Avalanche , Recovery Time Reverse Recovery Charge MARKING TOSHIBA SYMBOL 4}R TEST CONDITION - - MIN. - , .& j i _ # Lot Number TYPE U U - K2698* E] Month (Starting from Alphabet A) (Last Num ber -
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