NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SK2698 2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 2SK2698 DC-DC , recovery charge - 4.3 - uC Marking TOSHIBA K2698 Part No. (or abbreviation code , Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA Weight: 4.6 g (typ.) Drain current , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 ... | Original |
6 pages, |
2SK2698 transistor 2SK2698 2sk2698 transistor toshiba transistor 2sk2698 transistor k2698 K2698 TOSHIBA TOSHIBA K2698 k2698 toshiba transistor k2698 2SK2698 abstract |
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| Abstract: 2SK2698 2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 2SK2698 DC-DC , 4.3 - C Marking TOSHIBA K2698 Part No. (or abbreviation code) Lot No. A line , 3) EAR 15 mJ TOSHIBA Channel temperature Tch 150 °C Weight: 4.6 g (typ. , Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and , temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 ... | Original |
6 pages, |
2SK2698 transistor k2698 K2698 TOSHIBA K2698 TOSHIBA K2698 toshiba transistor k2698 2SK2698 abstract |
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| Abstract: 2SK2698 2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 2SK2698 DC-DC , - Reverse recovery charge - 4.3 - uC Marking TOSHIBA K2698 Part No. (or , Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C TOSHIBA , maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with , products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the ... | Original |
6 pages, |
transistor k2698 toshiba transistor 2sk2698 K2698 TOSHIBA TOSHIBA K2698 2Sk2698 toshiba transistor k2698 k2698 2SK2698 2SK2698 abstract |
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| Abstract: 2SK2698 2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2698 2SK2698 DC-DC , Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] TOSHIBA K2698 Part No. (or abbreviation code , Tstg -55~150 °C DC Drain current 1. GATE JEDEC JEITA TOSHIBA 2-16C1B 2-16C1B , upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept , limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please ... | Original |
6 pages, |
toshiba transistor 2sk2698 TOSHIBA K2698 2SK2698 K2698 TOSHIBA toshiba transistor k2698 k2698 2SK2698 abstract |
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