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176773-5 TE's AMP Multiple Circuit Housings with Tabs & Receptacles Including FASTIN-FASTON; 250 INT HSG CAP HSG 3P TOSHIBA ( AMP ) visit Digikey Buy
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toshiba mg75j2ys50

Catalog Datasheet MFG & Type PDF Document Tags

toshiba mg75j2ys50

Abstract: MG75J2YS50 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J2YS50 HIGH PO W ER SWITCHING , TOSHIBA Sem iconductor Reliability Handbook. 1997 03-03 - 1/5 TOSHIBA MG75J2YS50 , contained herein is subject to change w itho ut notice. 1997 03-03 - 2/5 TOSHIBA MG75J2YS50 TOSHIBA MG75J2YS50 ic - vge v c E , v g e - Qg GATE-EMITTER VOLTAGE Vç e W CHARGE , ) GATE RESISTANCE RG ¡11) COLLECTOR CURRENT 1997 03-03 - 4/5 TOSHIBA MG75J2YS50 ip - V f
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toshiba mg75j2ys50 2-94D1A 961001EAA2

toshiba mg75j2ys50

Abstract: MG75J2YS50 TOSHIBA TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG75J2YS50 MG75J2YS50 HIGH P O W E R , lia b ility H an d b o o k 350 TOSHIBA MG75J2YS50 ELECTRICAL CHARACTERISTICS (Ta = 25',C , .) 100 353 TOSHIBA MG75J2YS50 Ip - Vp trr, Irr - IF ajf-« W S. > tó OH âo K Ë , g e w it h o u t n otice. _ # 351 TOSHIBA MG75J2YS50 IC - VCE IC - VCE IC - VCE VCE - VGE COMMON EMITTER T c = -4 0 'C - -
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4A05 diode

Abstract: MG75J2YS50 TOSHIBA MG75J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J2 YS50 HIGH POWER , . 1997-03-03 1/5 TOSHIBA MG75J2YS50 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , ) 1997-03-03 3/5 TOSHIBA MG75J2YS50 le - vge vce, vge - qg 160 120 80 40 COMMON EMITTER Vce=5V II , t3 9 1 db 0.5 33.3±0.5 JEDEC â'" EIAJ â'" TOSHIBA 2-94D1A Weight : 202g (Typ.) MAXIMUM , (Terminal / Mounting) â'" 3/3 N-m 961001EAA2 0 TOSHIBA is continually working to improve the quality and
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4A05 diode ct 4a05 MG75J

MG75J2YS50

Abstract: MG75J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 Unit: mm High Power , ," or "TOSHIBA Semiconductor Reliability Handbook" etc. 2001-02-22 1/5 MG75J2YS50 , 75A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 202g (Typ.) 2-94D1A Maximum , current Screw torque (Terminal / mounting) A A 000707EAA2 · TOSHIBA is continually working , physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with
Toshiba
Original

MG75J2YS50

Abstract: Toshiba transistor Ic 100A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75J2YS50 GTR Module Unit in mm Silicon N , N¥m Equivalent Circuit TOSHIBA CORPORATION PW03100796 1/6 MG75J2YS50 Electrical , Timing Chart. Note 2 Silicone Grease is Applied. TOSHIBA CORPORATION PW03100796 2/6 MG75J2YS50 3/6 PW03100796 TOSHIBA CORPORATION MG75J2YS50 TOSHIBA CORPORATION PW03100796 4/6 MG75J2YS50 5/6 PW03100796 TOSHIBA CORPORATION MG75J2YS50 The information
Toshiba
Original
Toshiba transistor Ic 100A diode bridge toshiba
Abstract: MG75J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 Unit: mm High Power , 2001-02-22 4/5 MG75J2YS50 2001-02-22 5/5 Toshiba , ) (IC = 75A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 202g (Typ.) â'• â'• 2-94D1A , current Screw torque (Terminal / mounting) A A 000707EAA2 · TOSHIBA is continually working , physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with Toshiba
Original
Abstract: T O SH IB A TOSHIBA GTR MODULE MG75J2YS50 MG 7 5 J 2 YS50 SILICON N CHANNEL IGBT HIGH , Reliability Handbook. 1997 03-03 - 1/5 T O SH IB A MG75J2YS50 ELECTRICAL CHARACTERISTICS (Ta , TOSHIBA C O LLEC T O R - EM IT T ER V O LT A G E Vc e (V) C O LLE C T O R C U R R E N T Ic , R C U R R E N T lç (A) COLLECTOR-EMITTER VOLTAGE MG75J2YS50 Vqe (V) T O SH IB A MG75J2YS50 le - Vg e vcE , vge - Qg E £ U > o £ O > C * a h -3 a h < o ton -
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Abstract: T O SH IB A MG75J2YS50 MG 7 5 J 2 YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT , MG75J2YS50 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Collector , CURRENT Ic (A) COLLECTOR CURRENT Iq (A) COLLECTOR-EMITTER VOLTAGE TOSHIBA COLLECTOR-EMITTER VOLTAGE Vc e (V) V ce (V) COLLECTOR CURRENT lç (A) COLLECTOR-EMITTER VOLTAGE (V) MG75J2YS50 V qe T O SH IB A MG75J2YS50 vcE , le - Vg e vge - Qg E £ U > o £ O -
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MG75J2YS40

Abstract: MG100J2YS45 Insulated Gate Bipolar Transistors (IGBTs) Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba's 2nd Generation in , , Uninterruptible Power Supplies (UPS), induction ovens and arc welding. Toshiba is now recognized as the market leader in IGBT technology. Today Toshiba is introducing the 600V 3rd Generation IGBT which uses a 1pm , Toshiba's 3rd Generation IGBT is a square RBSOA at twice the rated current. A significant reduction of
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MG400Q1US11 MG50J2YS45 MG75J2YS45 MG100J2YS45 MG150J2YS45 2-95A1A MG75J2YS40 MG300Q1US MG200Q1US11 2-109A4A MG300Q1US11 MG500Q1US11 MG400Q1US21

GT250101

Abstract: MG150J2YS40 Insulated (ìate Bipolar Transistors (IG BTs) Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba's 2nd , drives, Uninterruptible Power Supplies (UPS), induction ovens and arc welding. Toshiba is now recognized as the market leader in IGBT technology. Today Toshiba is introducing the 600V 3rd Generation IGBT , improvement in Toshiba's 3rd Generation IGBT is a square RBSOA at twice the rated current. A significant
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GT250101 MG150J2YS40 MG75Q2YS11 MG200Q1JS9 MG50J6ES40 MG200Q2YS91 T0-220N 2-99A1A 2-99B1A