NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: * * * * * * * * * * * * Vertical DMOS Switches (Enhancement Mode) TO-92 (Enhancement Mode) P/N Zener Protected 70 70 , ) P/N TO-78 TO-92 BV (V(min) 60 60 rDS(on) ID(on) (max) (mA(min) 5 7.5 SOT-143 75 500 Package Channel TO-92 SOT-23 N N SO-14 SO-14 16-PIN 16-PIN DIP TO-99 , Amplifier Applications P/N Low Noise IDSS VGS(off) IGSS rDS(on) crss Package Channel (mA(min , -1000 -1000 1.0 1.5 2.0 10 10 10 TO-92 TO-92 TO-92 P/N N N N 3N163 3N163 3N164 3N164 ... | Original |
6 pages, |
j175 replacement U401 mosfet 2N4351 J113 spice model J201 Replacement AS4427 Direct replacement to LH0033 Power MOSFET N-Channel sot-23 mos n-channel SOT-23 MOSFET SOT-23 AS4426 U402 N CHANNEL FET s0 sot-23 mosfet datasheet abstract |
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| Abstract: n V P* V PA mA na PF PF ^-channel: Generally requires driver circuit tp translate the popular , D iMfom Switches - Junction FET Ordering Information Preferred rDS ioni Vp •gss , 41 30 150 2N5638 2N5638 TO-92 30 - -120 -1 nA -30 1 nA 50 - 24 10 40 2N5639 2N5639 TO-92 60 - -80 -1 nA -30 1 nA 25 - 54 10 40 2N5640 2N5640 TO-92 100 - -60 -1 nA -30 1 nA 5 - 63 10 40 ITE4091 ITE4091 TO-92 30 -5.0 -100 -200 -40 200 30 - 65 16 50 ITE4092 ITE4092 TO-92 50 -2.0 -100 -200 -40 200 15 - 95 16 50 ITE4093 ITE4093 TO-92 80 -10 ... | OCR Scan |
1 pages, |
J177. P-CHANNEL. TO-92 2N3972 2N3994 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N5116 it101 j112 fet 2N3970 2N3970 T0-18 2N3970 abstract |
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| Abstract: Datasheet 2N545/ 2N545/ 2N5458 2N5458 2N5459 2N5459 wencrai N CHANNEL FET aemicunaunur %iirpa 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 JEDEC TO-92 CASE (SDG) Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR 2N5457 2N5457 series types are Silicon N Channel Junction FET's designed for switching and amplifier applications. MAXIMUM RATINGS (Ta=25°C unless , ) .125(3.18) .105 2.67) .080 (2.03) .019 (0.48) p,A JL .016(0.41) 11 nn .210(5.33) .170(4.32) .500 ... | OCR Scan |
1 pages, |
to92 fet p channel N Channel FET to92 2N5459 2N5458 2N5457 2N545 FET 2N5458 FET 2N5459 fet 2n5457 2N545/ 2N545/ abstract |
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| Abstract: Number N or P Package (TO- I Breakdown Voltage (Volts, Min.) Threshold Voltage (Volts) Resistance (Channel Si) Geometry Min. Max. Min. Max. VCR2N IM 18 15 3.5 7.0 20 60 NC VCR3P P 72 15 3.5 7.0 70 , 35 - 1.5 2.0 JPAD10 JPAD10 92 Singlel 10 35 - 1.5 2.0 JPAD20 JPAD20 92 Single 20 35 - 1.5 2.0 JPAD50 JPAD50 TO-92 Single 20 35 1.5 2.0 JPAD100 JPAD100 TO-92 Single 50 35 - 1.5 2.0 JPAD200 JPAD200 TO-92 Single 100 35 - 1.5 2.0 JPAD500 JPAD500 TO-92 Single 500 35 - 1.5 2.0 PAD1 18 Single 1 45 120 1.5 0.8 PAD2 18 Single 2 45 120 1.5 0.8 ... | OCR Scan |
2 pages, |
JPAD20 PAD10 fet cross reference JPAD100 JPAD10 JPAD200 2N4119 N channel jfet 2N4302 2N3971 2n5019 to92 jfet p channel 2n4267 dual P-Channel JFET datasheet abstract |
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| Abstract: T(18) FET N(25, 29) Pin T(18) FET P(23) 1 E S 1 E S 2 B D 2 B G 3 C G 3 C D 4 GND CASE 4 GND , ) 0.200 Pin T(30) FET(24) 1 E1 S1 2 B1 D1 3- C1 G1 5 E2 S2 6 B2 D2 7 C2 G2 TO-92 (92, 94, 96) 2m 0.175 - , vrti Hh, vn^ umi- Amputiers 2 kl 58 N Channel Device BVQSS MV) Min ' RelYfel :(mmho]f.@Ff Re , 100 6 2 ~5 100 T0-92 T0-92(97) 30 0.8 3 15 100 1 100 50 100 6 2 5 100 TO-92(97) ißQflfeVÄ 25 1 6 10 1 4.5 , 15 1 t4.2 400 t80 100 T0-92 T0-92(92) 30 0.5 3 15 1 t3.0 400 t80 100 TO-92(92) MMBFJ305g 30 0.5 3 ... | OCR Scan |
2 pages, |
2n3819 surface mount 2N3819 NATIONAL SEMICONDUCTOR 2n3819 n channel fet S2 UMI 2N3819 T0-92 2N44-16 PW4416 2N3819 abstract |
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| Abstract: (4.318-5.334) i nnr 0 o o 1 ^ 0.030 0.500 Pin T(18) FET N(25, 29) Pin T(18) FET P(23) 1 E S 1 E S 2 B , vtti Hh, vn^ urn- Ampntiers 2 kl 58 N Channel Device BVqss MV) Min ' RelYfk iCmmhof^f Re , 100 75 100 6 2 ~5 100 T0-92 T0-92(97) 30 0.8 3 15 100 1 100 50 100 6 2 5 100 TO-92(97) ißQflfeVÄ 25 1 6 , TO-236* 30 2 6 15 1 t4.2 400 t80 100 T0-92 T0-92(92) 30 0.5 3 15 1 t3.0 400 t80 100 TO-92(92 , typical value TO-92(S2) T0-92 T0-92(97) TO-92(94) TO-72 Package Outlines (continued) TO-72 ... | OCR Scan |
2 pages, |
MMBF5484 2N3819 NATIONAL SEMICONDUCTOR 2N3819 to92 fet p channel T0-92 2N44-16 PW4416 2N3819 abstract |
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| Abstract: HITACHI 2SK291 2SK291 SILICON N-CHANNEL JUNCTION FET LOW FREQUENCY LOW NOlSE AMPLIFIER jIU . - î-d H H- ; î !. Dtuii 2. 3 C»k (Duptii^l i »r/n) (JEDEC TO-92) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ttcm Symbol 2SK29I 2SK29I Unit Gale 1« drain voltage Vgdo -15 V Gale jo sourcc voltage Vgso -15 V Drain current io 50 mA Gate cuncnt Je 5 inA Channel pO"*cr dissipation p* J00 mW Channel temperature T* 150 eC Storage temperature -55 to+150 UC MAXIMUM CHANNEL POWER DISSIPATION CURVE I ... | OCR Scan |
3 pages, |
2SK291 2SK291 abstract |
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| Abstract: = 10 V 4 2 100 Hz 10 p 5p 10 p J/SST201 J/SST2014 FET 100 1 kHz 2p 1p 500 f 1k , D S VIN Operating point considerations and minimizing noise figure. FET Under Test , TO-226AA (TO-92) Plastic TO-236 (SOT-23) Surface Mount 2N4338/2N4339 2N4338/2N4339 J201/J204 J201/J204 SST201/SST204 SST201/SST204 , Noise Region Represents the noise generated in the resistive channel portion of the JFET as identified , 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction ... | Original |
5 pages, |
monolithic amplifier MAR 3 app note SST4393 AN106 transistor FN 1016 2n930 equivalent 2n5088 transistor 2N4393 siliconix fet transistor 2F to-236 transistor equivalent table chart Siliconix JFETs Dual SST404 Siliconix AN106 AN106 abstract |
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| Abstract: 4 2 10 p J/SST201 J/SST2014 FET 0 1 kHz 2p 100 1p 500 f 1k 1p 10 k 100 k , D S VIN Operating point considerations and minimizing noise figure. FET Under Test , Application Low current/low voltage amplifier Metal Can Hermetic TO-226AA (TO-92) Plastic TO-236 , Represents the noise generated in the resistive channel portion of the JFET as identified in equation (1). , Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction FET en and in ... | Original |
5 pages, |
1F SOT-23 jfet JFET APPLICATIONS 2n930 equivalent PN4393 Siliconix JFET SST404 SST4393 transistor equivalent table chart AN106 2N4393 2N5088 equivalent 2n5088 transistor jfet to 92 AN106 abstract |
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| Abstract: 2N5088/2N930 2N5088/2N930 VCE = 5 V FET ID = IDSS VDS = 10 V 4 2 10 p J/SST201 J/SST2014 FET 0 1 kHz , D S VIN Operating point considerations and minimizing noise figure. FET Under Test , Application Low current/low voltage amplifier Metal Can Hermetic TO-226AA (TO-92) Plastic TO-236 , Noise Region Represents the noise generated in the resistive channel portion of the JFET as identified , 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction ... | Original |
5 pages, |
PN4393 Siliconix "fet" SST4393 Siliconix JFET datasheet j201 jfet 2n5088 transistor 2N5088 equivalent siliconix fet monolithic amplifier MAR 3 app note 2N4393 2n930 equivalent 2N5088 SIMILAR ic for hearing aid AN106 AN106 abstract |
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| -Gate)" "$commentge" = "Thyristortriode (K-Gate)" "$type" = "2P4M" part thk_brx46 : to92 "$comment -Substrat */ part trfan : default to92 "$comment" = "Transistor Enhancement IGFET N-Channel" "$commentge -Kanal Leistungs-FET" part trfap_s : default sot223 "$comment" = "Mini P-Channel Power-FET" "$commentge : to92 "$comment" = "Thyristor Triode (K-Gate)" "$commentge" = "Thyristortriode (K-Gate)" "$type" = "BRX49 BRX49 BRX49 BRX49" part thk_bry55 : to92 "$comment" = "Thyristor Triode (K-Gate)" "$commentge www.datasheetarchive.com/download/48664731-299145ZC/bae65022linux.tgz |
Kaleidoscope | 22/08/2005 | 11421.08 Kb | TGZ | bae65022linux.tgz |
| J108-9-10 J108-9-10 J108-9-10 J108-9-10_2 Product information page J108; J109; J110; N-channel silicon junction FETs General info N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. Features High speed switching Interchangeability of drain and source , Straight Leads (TO-92) SOT54 RFS J110 9340 038 70126 Standard Marking Choppers and commutators. Parametrics TYPENUMBER Category CRS (pF) I DSS (mA) I DSS (m www.datasheetarchive.com/files/philips/pip/j108-9-10_2.html |
Philips | 23/04/2003 | 5.08 Kb | HTML | j108-9-10_2.html |
| ; J109; J110; N-channel silicon junction FETs General info N-channel symmetrical silicon junction field-effect transistors in a TO-92 package J108; J109; J110 N-channel silicon junction FETs 30-7-1996 Product Specification Pack, Straight Leads (TO-92) SOT54 RFS Chemical content J110 9340 commutators. Parametrics TYPENUMBER CRS (pF) I DSS (mA) I DSS (mA) I G (mA) R DS www.datasheetarchive.com/files/philips/pip/j108-9-10_2-v2.html |
Philips | 06/06/2005 | 5.46 Kb | HTML | j108-9-10_2-v2.html |
| 4393; N-channel silicon field-effect transistors General info Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. Parametrics TYPENUMBER Category CRS (pF) I DSS (mA) I DSS (mA) I G (mA) Package R DS(on) (Ohm) t off (ns) t on (ns) -V(P)GS(V) V (P)GS (V) V DS max(V) PN4392 PN4392 PN4392 PN4392 N-channel junction field-effect transistors for switching 5 25 25 50 SOT54 (SPT, E www.datasheetarchive.com/files/philips/pip/pn4391_4392_4393_cnv_2.html |
Philips | 23/04/2003 | 3.98 Kb | HTML | pn4391_4392_4393_cnv_2.html |
| J111; J112; J113 N-channel silicon field-effect transistors Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications Typenumber I DSS MIN (mA) t off TYP (ns) CRS MAX (pF) I G (mA) V (P)GS MAX (V) I DSS MIN - MAX (mA) R DS(on) MAX ( Ohm) V DS @ max. (V) t on MAX (ns) -V(P)GS (V) V (P)GS MIN (V) V DS @ max. (V) V (P)GS MAX (V) t off TYP (ns) CRS www.datasheetarchive.com/files/philips/pip/j111_112_113_cnv_2-v1.html |
Philips | 14/02/2002 | 11.67 Kb | HTML | j111_112_113_cnv_2-v1.html |
| PN4391 PN4391 PN4391 PN4391 to 4393 N-channel silicon field-effect transistors Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications R DS(on) MAX ( Ohm) I DSS MIN (mA) I DSS MIN - MAX (mA) V (P)GS MAX (V) t on MAX (ns) -V(P)GS (V) V (P)GS MIN (V) I G (mA) CRS MAX (pF) t off MAX (ns) V (P)GS MAX (V) R DS(on) MAX ( Ohm) I DSS MIN - MAX (mA) V DS @ max. (V) V www.datasheetarchive.com/files/philips/pip/pn4391_4392_4393_cnv_2-v1.html |
Philips | 14/02/2002 | 11.37 Kb | HTML | pn4391_4392_4393_cnv_2-v1.html |
| 113; N-channel silicon field-effect transistors General info Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches connections Low RDS on at zero gate voltage Parametrics TYPENUMBER Category CRS (pF) I DSS (mA) I DSS (mA) I G (mA) Package R DS(on) (Ohm) t off (ns) t on (ns) -V(P)GS(V) V (P)GS (V) V DS max(V) J111 N-channel junction field-effect transistors for switching typ. 3 www.datasheetarchive.com/files/philips/pip/j111_112_113_cnv_2.html |
Philips | 23/04/2003 | 4.78 Kb | HTML | j111_112_113_cnv_2.html |
| ; J176; J177; P-channel silicon field-effect transistors General info Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers max(V) J174 P-channel junction field-effect transistors for switching 4 4 135 20 to 135 50 50 SOT54 (SPT, E-1) 85 15 7 10 5 5 to 10 30 J175 P-channel junction 15 6 3 3 to 6 30 J176 P-channel junction field-effect transistors for switching 4 www.datasheetarchive.com/files/philips/pip/j174_175_176_177_cnv_2.html |
Philips | 23/04/2003 | 5.53 Kb | HTML | j174_175_176_177_cnv_2.html |
| -9-10_2 J108; J109; J110 N-channel silicon junction FETs N-channel symmetrical silicon junction field-effect transistors in a TO-92 package J108; J109; J110 N-channel silicon junction FETs 30-Jul-96 Product . Typenumber I G (mA) CRS MAX (pF) I DSS MIN - MAX (mA) t on MAX (ns) I DSS MIN (mA) CRS MAX (pF) t off TYP (ns) V (P)GS MAX (V) V (P)GS MIN (V) V DS @ max. (V www.datasheetarchive.com/files/philips/pip/j108-9-10_2-v1.html |
Philips | 14/02/2002 | 11.61 Kb | HTML | j108-9-10_2-v1.html |
| ) ; } /* Transistors Block FET P-Channel / Transistoren Sperrschicht FET P-Kanal */ part trfsp_ : nospec { newattr "$comment" = "Transistor Block FET P-Channel" ; newattr "$commentge" = "Transistor Sperrschicht FET P _s : default sot223 { newattr "$comment" = "Mini P-Channel Power-FET" ; newattr "$commentge" = "Mini P ( a, k, g) to ( 2, 1, 3) ; } part thk_brx46 : to92 { newattr "$comment" = "Thyristor Triode (K ( a, k, g) to ( 3, 1, 2) ; } part thk_brx49 : to92 { newattr "$comment" = "Thyristor Triode (K www.datasheetarchive.com/download/48664731-299145ZC/bae65022linux.tgz |
Kaleidoscope | 22/08/2005 | 11421.08 Kb | TGZ | bae65022linux.tgz |