NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Issued March 1997 232-2835 Data Pack J Encapsulated thyristor and diode packs Data Sheet A range of encapsulated modules, either thyristor or diode, available in two voltage ratings 800VRRM 800VRRM and 1200V RRM for 250 Vrms and 440 Vrms respectively. The thyristor module is available in five , identical fixing centres as the thyristor and diode modules. The module contains all the timing, buffering, and thyristor drive circuits necessary to provide reliable and accurate phase control for any of the ... | Original |
10 pages, |
BUSBAR calculation 800VRRM 3 phase thyristor dc drive thyristor 1200V 50A RS 301-678 1200v ac 7.5a thyristor phase angle trigger module 301-678 thyristor 80A, 1200V 800VRRM abstract |
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| Abstract: Issued March 1991 006-575 Data Pack J Encapsulated thyristor and diode packs Data Sheet A range of encapsulated modules, either thyristor or diode, available in two voltage ratings 800VRRM 800VRRM and 1200V RRM for 250 Vrms and 440 Vrms respectively. The thyristor module is available in five , identical fixing centres as the thyristor and diode modules. The module contains all the timing, buffering, and thyristor drive circuits necessary to provide reliable and accurate phase control for any of the ... | Original |
10 pages, |
phase angle trigger module 301-678 mkp 10 500v BUSBAR calculation 800VRRM 800VRRM abstract |
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| Abstract: Issued March 1991 J6575 J6575 Encapsulated thyristor and diode packs A range of encapsulated modules, either thyristor or diode, available in two voltage ratings 800V RRM and 1200V RRM for 250 V and 440 V rms respectiverms ly. The thyristor module is available in five current ratings; the diode modules , single and three phase a.c. switches, motor control, dimmers, battery chargers, prim Thyristor pack ary , number 301-678. Featuring encapsulated construction with identical fixing centres as the thyristor and ... | Original |
10 pages, |
mkp 10 500v 1200V 100 A THYRISTOR J6575 J6575 abstract |
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| Abstract: 600V 800V 800V 800V 800V 900V 900V 1000V 1000V 1000V 1000V 180A 180A 75A 80A 165A 68A , 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 15A 48A 42A 45A 75A* 75A* 70A 70A , 40N60CD1 40N60CD1 IXSR35N120B01 IXSR35N120B01 IXDR 30N120D1 30N120D1 600V 600V 600V 600V 600V 1200V 1200V 75A 42A 45A 70A , SCHOTTKY DSSK 60-015AR 60-015AR RECTIFIERS DSP25-16AR DSP25-16AR DSI 45-16AR 45-16AR 200V 300V 600V 600V 600V 1000V 1200V 1200V 1200V 1200V 150V 2x34A 2x30A 9A 17A 30A 30A 15A 30A 30A 60A 2x30A 0.85V 0.91V ... | Original |
3 pages, |
30A, 600v RECTIFIER DIODE 1200v ac 7.5a thyristor ixgr32n60cd1 120N20 IXBF40N160 IXLF19N250A igbt 500V 45A 12N60c equivalent 80n60 MOSFET 800V 10A 13N50 equivalent MOSFET 1000v 30a buck 800v igbt ISOPLUS247TM ISOPLUS247TM ISOPLUS247TM abstract |
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| Abstract: Normal Thyristor XX VRRM = XX * 100 e.g.12 * 100 =1200V Hind Rectifiers Ltd reserves the right to , slope resistance Sine wave, 10mS without reverse voltage 150 On-state current = 80A 150 ... | Original |
6 pages, |
Hirect 1000C thyristor 80A, 1200V HDD25NXX HDD25NXX abstract |
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| Abstract: technology used has reliable operation up to 140°C junction temperature. VT < 1.6V @ 80A ITSM = 350A VRRM = 1200V Typical applications are in input rectification (soft start) and these , mA Leakage Current 10 IH Holding Current 100 IL Max. Latching Current @ 80A , T = Single Thyristor 3 - 4 - 5 - 6 - Package T = TO-220 Type of Silicon S = Standard Recovery Rectifier Voltage Rating (12 = 1200V) none = Standard Production PbF = ... | Original |
7 pages, |
thyristor 80A, 1200V 40TTS12 I2233 I2233 abstract |
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| Abstract: MTK MODULES 3 1200V 100.000A MTK MODULES 3 1200V 100.000A MTK MODULES 3 1600V 100.000A MTK MODULES , Phase Bridge in a INT-A-Pak package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1400V 3 Phase Bridge in a , 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 , 110A Schottky Common Cathode Diode in a D6120 D6120 8-SM package 3 1200V 3 Phase Bridge in a INT-A-Pak ... | Original |
463 pages, |
N mosfet 100v 200A bridge ir2110 Class d IR2110 ir2153 application h bridge ir2110 power supply using IR2153 ac control using ir2110 and mosfet IR2110 h bridge application notes P-CHANNEL 45A TO-247 POWER MOSFET 800V 40A mosfet 600V 300A igbt dc to dc boost converter full bridge ir2110 datasheet abstract |
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| Abstract: kpc2200 BTB26-400 FAST THYRISTOR (RUSSIAN PURPOSE) Features: ~ Hermetic metal cases with glass and ceramic insulators , OM103 OM103 16 O173 16 O273 16 FAST SWITCHING THYRISTOR (RUSSIAN PURPOSE) Features: ~ Hermetic metal , circuit is provided, so the direct control by thyristor with logic element is provided as well as a ... | Original |
48 pages, |
optothy OPTO-Thyristor DH453 TS133 ZP300A ZP50A kp5a optothyristor russian ic ZP20A KP200A thyristor k 202 russian ZP10A KP50A zp5a datasheet abstract |
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| Abstract: HS1838 APT35DL120HJ ® High Speed (HS) NPT Power MOS 8TM PT 900V Field Stop Power MOS 8TM PT 1200V Fast NPT , X = Three Phase Bridge Blocking Voltage: 60 = 600V 120 = 1200V 170 = 1700V Option: D = Series Diode , Switch X = Three Phase Bridge Blocking Voltage: 20 = 200V 40 = 400V 60 = 600V 100 = 1000V 120 = 1200V 160 ... | Original |
40 pages, |
APT140N65JC6 APT100S20B 500w half bridge smps 2000w pfc igbt DRF1400 FAST RECOVERY DIODE dual 20a 600 to247 SP6-P SMPS 1000w IGBT REFERENCE DESIGN silicon carbide JFET SiC JFET 1000w Induction motor inverter MOSFET resonant converter for welding push pull converter 1000W output datasheet abstract |
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| Abstract: designed with 600V blocking voltage and all 660V output relays are designed with 1200V blocking voltage , Price Replacement Fuses - One fuse supplied standard with each fused relay. Fuse Size 63A 80A , will have a rating of 25 Amps and a Peak Inverse Voltage capability of 1200V, quite suitable for , time. For solid state relays, I2T is based directly on the output thyristor's single-cycle peak surge ... | Original |
21 pages, |
SSR schematics 800va ups circuit hp 15 star delta control 3phase SAR6-50-1D 28V 50A Relay 20000 watt schematics power amp Dow Corning DC-4 silicone compound solid state relay application notes Sprecher 4-5 Sprecher Schuh star delta 5 leg relay free SAR6-50-1 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| : Diode Anode(A) Symbol Parameter MDS35 MDS35 MDS35 MDS35 Unit -800 -1000 -1200 V DRM V RRM Repetitive peak off-state voltage Tj = 125 5 C 800 1000 1200 V TM: ISOTOP is a trademak of SGS-THOMSON Microelectronics . V DRM = V RRM UP TO 1200 V . I T(AV) = 25 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE A MAX 120 I H I T = 0.5A gate open Tj=25 5 C TYP 40 mA MAX 80 V TM I TM = 80A tp= 380 m s 5 C MAX 10 tq I T = 80A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m s Gate open www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3032-v1.htm |
STMicroelectronics | 20/10/2000 | 10.91 Kb | HTM | 3032-v1.htm |
| -800 -1000 -1200 V DRM V RRM Repetitive peak off-state voltage Tj = 125 5 C 800 1000 1200 V TM: ISOTOP is a trademak of SGS-THOMSON Microelectronics . V DRM = V RRM UP TO 1200 V . I T(AV) = 25 A . HIGH 40 mA MAX 80 V TM I TM = 80A tp= 380 m s Tj=25 5 C MAX 1.7 V I DRM I RRM V DRM Rated V RRM Rated Tj=25 5 C MAX 0.05 mA Tj=125 5 C MAX 10 tq I T = 80A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m (tp = 20 m s) V RGM = 5V. Symbol Test Conditions Value Unit V F I F =80A Tj=25 5 C 1.7 V I R V R =V www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3032-v2.htm |
STMicroelectronics | 14/06/1999 | 8.61 Kb | HTM | 3032-v2.htm |
| -800 -1000 -1200 V DRM V RRM Repetitive peak off-state voltage Tj = 125 5 C 800 1000 1200 V TM: ISOTOP is a trademak of SGS-THOMSON Microelectronics . V DRM = V RRM UP TO 1200 V . I T(AV) = 25 A . HIGH 40 mA MAX 80 V TM I TM = 80A tp= 380 m s Tj=25 5 C MAX 1.7 V I DRM I RRM V DRM Rated V RRM Rated Tj=25 5 C MAX 0.05 mA Tj=125 5 C MAX 10 tq I T = 80A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m (tp = 20 m s) V RGM = 5V. Symbol Test Conditions Value Unit V F I F =80A Tj=25 5 C 1.7 V I R V R =V www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3032.htm |
STMicroelectronics | 02/04/1999 | 8.64 Kb | HTM | 3032.htm |
| RURG75120 RURG75120 RURG75120 RURG75120 75A, 1200V Ultrafast Diode RURG8040 RURG8040 RURG8040 RURG8040, RURG8050 RURG8050 RURG8050 RURG8050, RURG8060 RURG8060 RURG8060 RURG8060 80A, 400 75A, 1200V Ultrafast Diode RURU8040 RURU8040 RURU8040 RURU8040, RURU8050 RURU8050 RURU8050 RURU8050, RURU8060 RURU8060 RURU8060 RURU8060 80A, 400V - 600V Diodes RHRP6120CC RHRP6120CC RHRP6120CC RHRP6120CC 6A, 1200V Hyperfast Dual Diode RHRP8120CC RHRP8120CC RHRP8120CC RHRP8120CC 8A, 1200V Hyperfast Dual Diode RHRG1540CC RHRG1540CC RHRG1540CC RHRG1540CC, RHRG1550CC RHRG1550CC RHRG1550CC RHRG1550CC, RHRG1560CC RHRG1560CC RHRG1560CC RHRG1560CC 15A, 400V , 700V - 1000V Hyperfast Dual Diodes RHRG15120CC RHRG15120CC RHRG15120CC RHRG15120CC 15A, 1200V Hyperfast Dual Diode www.datasheetarchive.com/files/harris/families/mct.htm |
Harris | 15/08/1997 | 38.41 Kb | HTM | mct.htm |
| : MSS40-1400 MSS40-1400 MSS40-1400 MSS40-1400 - I DRM and I RRM at Tj = 1255C 1255C 1255C 1255C is defined at 1200 V - dV/dt at Tj = 1255C 1255C 1255C 1255C is defined at 67% of 1200 V GATE CHARACTERISTICS (maximum values) P GM = 50 W (tp = 20 m s) P G (AV 60 mA MAX 120 I H I T = 0.5A gate open Tj=25 5 C TYP 40 mA MAX 80 V TM I TM = 80A tp A Tj=125 5 C MAX 10 tq I T = 80A V R =75V V D =67%V DRM dI/dt=30A/ m s dV/dt=20V/ m s ST | THYRISTOR MODULE Datasheet THYRISTOR www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3034-v1.htm |
STMicroelectronics | 20/10/2000 | 8.6 Kb | HTM | 3034-v1.htm |
| 40-1400 - I DRM and I RRM at Tj = 1255C 1255C 1255C 1255C is defined at 1200 V - dV/dt at Tj = 1255C 1255C 1255C 1255C is defined at 67% of 1200 V GATE CHARACTERISTICS (maximum values) P GM = 50 W (tp = 20 m s) P G (AV) = 1 W I FGM = 4 A 60 mA MAX 120 I H I T = 0.5A gate open Tj=25 5 C TYP 40 mA MAX 80 V TM I TM = 80A tp= 380 m s Tj=25 5 C MAX 1.7 V I DRM I RRM V DRM Rated V RRM Rated Tj=25 5 C MAX 0.05 mA Tj=125 5 C MAX 10 tq I T = 80A ST | THYRISTOR MODULE MSS40-1200 MSS40-1200 MSS40-1200 MSS40-1200 MSS40-800 MSS40-800 MSS40-800 MSS40-800 MSS40 MSS40 MSS40 MSS40 THYRISTOR MODULE Document Number www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3034-v2.htm |
STMicroelectronics | 14/06/1999 | 6.46 Kb | HTM | 3034-v2.htm |
| 40-1400 - I DRM and I RRM at Tj = 1255C 1255C 1255C 1255C is defined at 1200 V - dV/dt at Tj = 1255C 1255C 1255C 1255C is defined at 67% of 1200 V GATE CHARACTERISTICS (maximum values) P GM = 50 W (tp = 20 m s) P G (AV) = 1 W I FGM = 4 A 60 mA MAX 120 I H I T = 0.5A gate open Tj=25 5 C TYP 40 mA MAX 80 V TM I TM = 80A tp= 380 m s Tj=25 5 C MAX 1.7 V I DRM I RRM V DRM Rated V RRM Rated Tj=25 5 C MAX 0.05 mA Tj=125 5 C MAX 10 tq I T = 80A ST | THYRISTOR MODULE MSS40-1200 MSS40-1200 MSS40-1200 MSS40-1200 MSS40-800 MSS40-800 MSS40-800 MSS40-800 MSS40 MSS40 MSS40 MSS40 THYRISTOR MODULE Document Number www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3034.htm |
STMicroelectronics | 02/04/1999 | 6.5 Kb | HTM | 3034.htm |
| STTH Series - High Temperature · 300V STTH Turboswitch 5 to 2 x 80A - 1200V · BYW 200V Ultrafast, 1.5 to 30A · BYT 1000V www.datasheetarchive.com/files/stmicroelectronics/stonline/rectifiers/index-v1.htm |
STMicroelectronics | 08/02/2001 | 15.6 Kb | HTM | index-v1.htm |
| · 300V STTH Turboswitch 5 to 2 x 80A . 1200V www.datasheetarchive.com/files/stmicroelectronics/stonline/rectifiers/index.htm |
STMicroelectronics | 24/10/2000 | 17.32 Kb | HTM | index.htm |
| STTH Series - High Temperature · 300V STTH Turboswitch 5 to 2 x 80A - 1200V · BYW 200V Ultrafast, 1.5 to 30A · BYT 1000V www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/rectif/rectidx-v1.htm |
STMicroelectronics | 02/11/2000 | 15.56 Kb | HTM | rectidx-v1.htm |