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thyristor TD 42 F

Catalog Datasheet MFG & Type PDF Document Tags

powerblock Tt

Abstract: TD Description Circuit DD single diode type TZ ND DZ D T single thyristor type , in ceramic housing as well as PowerBLOCK modules in various thyristor and diode configurations. The , application fields. t PowerBLOCK modules are offered in a broad range containing thyristor and diode , containing thyristor or diode pellets are offered in a voltage range of 200V to 9500V and a current range of , environmental influences as e.g. high humidity. Type Voltage VRRM Current ITAV Ceramic Thyristor/Diode
Infineon Technologies
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Eupec bsm 25 gb 120

Abstract: diode 1481 Half-controlled thyristor modules TD 121 N 18 K O F -A TD,DT with 1 symmetric thyristor and 1 diode AD , Epoxy disc 26 mm high Rectifier F N fast thyristor, gatecathode interdigitated fast thyristor , current (A), tc = 85° C N phase control thyristor and retifier diode F fast thyristor and fast diode , 471 N D 2601 N Diode Pellets Pellet: 40 DN 42 (IFAVM = 1160A, 4200V) click on part-no. to select , designations Thyristors T 930 S 18 T M C T symmetrically blocking thyristor A asymmetrically blocking
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thyristor TT 46 N

Abstract: TT 105 N 12 TT 18 N 800. 1600 40 350 0,61 18/85 1,1 16 100 50 F = 1000 1,2 0,2 125 47 TD 18 N 25/60 , 100 60 F= 1000 0,92 0,2 125 47 TD 31 N 48/50 48 DT 31 N TT 36 N 800. 1600 80 850 3,6 36/85 1 6,2 120 60 F = 1000 0,72 0,16 125 47 TD 36 N 51/60 48 DT 36 N TT 46 N 800.1600 100 1000 5 46/85 0,95 4,5 120 60 F = 1000 0,6 0,16 125 47 TD 46 N 64/61 , ,4 150 120 F = 1000 0,52 0,16 125 50 TD 60 N 76/68 DT 60 N TT 61 N 800
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Abstract: SKET 330 THYRISTOR BRIDGE,SCR,BRIDGE LMKN L UQQ TDQQ TÂ¥QQ TAQQ TUQQ DQQQ O9RL P BBQ R H*2)? TUQV 94 P WU XFI KZ@9 BBQ[QU@ KZ@9 BBQ[TD@ KZ@9 BBQ[TÂ¥@ KZ@9 BBQ[TA@ KZ@9 BBQ[TU@ KZ , OMNK 7TA[Â¥QQ]V 9& P BC XFV _T [ _B AUC [ B ` CCQ R O9KN Thyristor Modules Symbol , R R Rb* 2b' # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4' , * 9Ja P TBQ XFV LME P LMMNV LEE P LEMN 1&S? DQQ 1R '/3 9Ja P DC XFV Oe P T RV 32e[3' P T R[f SEMIKRON
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Diode LT 410

Abstract: Hirect RATING TYPE N : PHASE CONTROL THYRISTOR/ RECTIFIER DIODE F : FAST TURN OF THYRISTOR S : FAST RECOVERY , /1.4 12 50 150* 620 25 125 430 6 2 TT/TD / DT 22 0.06 150/1.4 11 42 150* 620 30 125 500 6 , 42 150* 620 30 125 500 6 2 TT/TD / DT 17 0.04 200/2 12 50 150* 1200 50 125 800 6/12 3 , /TD/ DT 17 0.04 150/1.4 12 42 150" 620 30 140 800 6/12 3 TT/TD/ DT 72 , ) Insulated Package ORDERING: H TT 251 N 1200 K 0 F DV/DT :- B-50V/^S C-400V//iS F-1000V///S TURN OFF
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HTT60N HDT60N HTT75N Diode LT 410 Hirect thyristor TT 45 N 1200 HTD95N HTT95N thyristor tt 162 n 12 00000BE C-400V// F-1000V///S 18//S DDDDD23 HTT32N

thyristor TT 46 N

Abstract: thyristor TT 36 N TT 18 N 800.1600 40 350 0,61 18/85 1,1 16 100 50 F = 1000 1,2 0,2 125 47 TD 18 N 25/60 , 100 60 F= 1000 0,92 0,2 125 47 TD 31 N 48/50 48 DT 31 N TT 36 N 800.1600 80 850 3,6 36/85 1 6,2 120 60 F = 1000 0,72 0,16 125 47 TD 36 N 51/60 48 DT 36 N TT 46 N 800.1600 100 1000 5 46/85 0,95 4,5 120 60 F = 1000 0,6 0,16 125 47 TD 46 N 64/61 , ,4 150 120 F = 1000 0,52 0,16 125 50 TD 60 N 76/68 DT 60 N TT 61 N 800
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thyristor TT 46 N thyristor TT 36 N thyristor TT 95 N 1200 thyristor tt 66 n 16 thyristor tt 121 thyristor tt 500 n 16

FS300R12OE4P

Abstract: FP06R12W1T4 Links2.22 IGBT Modules - High Power Overview IGBT 3.1 3.2 Overview Module Systems 4.2 MIPAQTM4 , AC-Switches 5.6 Outlines5.7 Package Units 5.10 Thyristor & Diode Modules 5.11 Overview PowerBLOCK Thyristor Modules for Phase Control5.12 PowerBLOCK Thyristor Modules for Phase Control 5.13 PowerBLOCK Single Thyristor Modules for Phase Control 5.14 Overview PowerBLOCK Thyristor/ Diode Modules for Phase Control 5.15 PowerBLOCK Thyristor/Diode Modules for Phase Control5.16 Overview PowerBLOCK Diode/ Thyristor
Infineon Technologies
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FS300R12OE4P FP06R12W1T4 FS450R12OE4P F3L400R12PT4 bt 1690 scr FF150R12RT4 B133-H9378-G3-X-7600

td331

Abstract: tV33 of Limit device 10000 KX091T#360-420 TD Issue 1 Medium Voltage Thyristor Types KX091T#360 to , Thyristor Types KX091T#360 to KX091T#420 (Development Type Number) MAXIMUM LIMITS 3600-4200 3600-4200 , Characteristics Medium Voltage Thyristor Types KX091T#360 to KX091T#420 PARAMETER VTM VTM VT0 rT Maximum , =100V, Vdr=80%VDRM, dVdr/dt=200V/µs RthJK F Thermal resistance, junction to heatsink Mounting force 0.0085 Double side cooled 0.0170 Single side cooled 77 63 Wt Weight 1.23 Outlines TC & TT 1.70 Outlines TD & TV
Westcode Semiconductors
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td331 tV33 VDRM/100 KX091TT400 D-68623

semikron skiip 82 ANB 15 T 10

Abstract: semikron IGBT SKIIP 82 ANB 15 = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Diode & IGBT Thyristor AC, 1 min , Tj = 125 °C Tj = 125 °C per diode Thyristor - Rectifier VT VT (TO) rT Rthjh IGD VGT IGT IH IL dv/dtCR di/dtCR IF = 75 A Tj = 25 °C Tj = 125 °C Tj = 125 °C per thyristor Tj = 125 , ), data sheet on request IGBT - Chopper IC = 30 A Tj = 25 (125) °C VCEsat td(on) VCC = 300 V; VGE = ± 15 V tr IC = 30 A; Tj = 125 °C Rgon = Rgoff = 33 td(off) tf inductive load Eon + Eoff
SEMIKRON
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semikron skiip 82 ANB 15 T 10 semikron IGBT SKIIP 82 ANB 15 MiniSKiiP 8 semikron skiip 82 AHB 15 T semikron skiip 83 skiip 82 anb 15
Abstract: 167 2,06 2,42 1,79 2,79 ns mWs 2530 f=1MHz 0 25 Tj=25° C 132 pF 115 , Figure 1 Typical thyristor forward current as a function of forward voltage IF= f(VF) Thyristor Figure 2 Thyristor transient thermal impedance as a function of pulse width ZthJH = f(tp) 101 50 , Maximum Junction Temperature Tj=Tjmax Th=80° C Tc=80° C Input Rectifier Thyristor , dissipation per Thyristor Ptot Maximum Junction Temperature copyright Vincotech Tj=Tjmax Tjmax Vincotech
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V23990-P718- 90CON 90PACK V23990-P718-G-PM V23990-P718-G10-PM V23990-P718-H-PM

Thyristor ys 150 103

Abstract: SCR c781 Inverters. THYRISTOR (SCR) PR ESS PAK MAXIMUM ALLOWABLE RATINGS see package styles on page 8 height 1.0 , VD = 0.8VDRM open sate Delay Time td MS 1.5 2.5 3.0 Tj = I25°C-Vp = 1500V Gate Trigger Current !GT ma 250 Tj = 25?C, Vd = 12V DC Gate Trigger Voltage VGT V 4.2 Non-Trigger Current IGDM ma 15 , duration tp > td Conventional Circuit Comrouiating Turn-off time (with reverse voltage) iq MS 250 400 Tj , VGT V 4.2 Non-Trigger Current IG DM ma 15 Tj = 125°C, VD = 1300V Non-Trigger Voltage VGDM V
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C784DD C78JLA Thyristor ys 150 103 SCR c781 thyristors 5000 volt 3000 amperes high power thyristor scr Thyristor ys 130 C782/C785 C784/C787 44UUV 26KA/24KA I650A

IEC747-6

Abstract: tt60f 46 F 800.1200* 120 1150 6,60 45/85 1,30 3,4 120 F< 25 B = 50 0,52 0,16 125 96 TD 46 F 76/48 , 125 97 â  TD 60 F 96/50 E< 20 C = 500 â  DT 60 F D < 15" L = 500 , ,30 3,1 160 F< 25 B = 50 0,30 0,06 125 98 TD 71 F 115/50 E< 20 C = 500 DT 71 F , 50 0,30 0,06 125 98 TD 81 F 115/62 D < 15 C = 500 DT 81 F C*< 12 L = 500 , 98 TD 101 F 128/70 E< 20 C = 500 DT 101 F L = 500 M* = 1000
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OCR Scan
IEC747-6 tt60f 101-AK thyristor TD 42 F TD 42 F AK 12 0D021 34D3ET7 D0D217

powerblock tt 45

Abstract: thyristor tt 18 n 800 0,1 130 TP3 TT 104 N TD 104 N DT 104 N 16,2 104/85 0,85 2,15 150 150 F , 96/61 TT TD DT 85 N 85 N 85 N 800.1800 180 2000 20,00 106/85 115/78 0,90 2,6 150 150 F = 1000 0,33 , rum + 100V Baseplate = 20 mm TT TD 46 F 46 F 800. .1200* 120 max 180° el sin *1 0 3 DIN , 1000 Baseplate = 30 mm TT TD DT 71 F 71 F 71 F 1000.1400* 180 2100 22,00 71/85 115/50 1,30 3,1 160 F
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powerblock tt 45 thyristor tt 18 n 800 powerblock TT 95 N 1200 dt61n powerblock TD 95 N 1200 TP-7F

thyristor TD 42

Abstract: tt200f Fast thyristor modules Type Vdrm Vrrm Vdsm Vrsm V Modules with soldered contacts TT 18 F TD 18 F , 25 F TD 25 F DT 25 F 800 1000 1200* 1100* 50 460 1060 32/71 25/85 1,20 8,0 100 0,92 0,2 125 TT 32 F TD 32 F DT 32 F 800 1000 1200* 1100* 80 850 3600 51/52 32/85 1,30 5,5 120 0,72 0,16 125 TT 42 F TD 42 F DT 42 F 800 , Modules with compression bonding TT 46 F TD 46 F DT 46 F TT 60 F TD 60 F DT 60 F TT 71 F TD 71 F DT 71
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thyristor TD 42 tt200f TT42F

powerblock tt 45

Abstract: thyristor TD 42 F ,06 125 TP5 TT 101 F TD 101 F DT 101 F 1000.1400* 200 2400 28,80 101/85 1,20 2,1 160 F 25 E 20 C = 500 0,23 0,06 125 TP5 TT111 F TD 111 F DT , C = 500 0,13 0,04 125 TP7 0,42 200 G = 30 F = 25 E = 20 C = 500 0,08 0,02 125 TP8 TT 46 F TD 46 F 800.1200* Baseplate = 30mm TT 71 F 1000. .1400* TD 71 F DT 71 F TT 81 F TD 81 F DT 81 F Baseplate = 50mm TT 180 F 1000.1300* TD 180 F DT
Eupec
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71 DT 4 7476 dt200f TT 46 TT 7476

EUPEC TT 200

Abstract: thyristor TT 45 N 1200 N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT92N , Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 f = 50 Hz, iGM = 0,6 A, diG/dt = 0,6 , Tvj = Tvj max, vD = 0,67 VDRM 6.Kennbuchstabe / 6th letter F (dvD/dt)cr Charakteristische Werte , Netz-Thyristor-Modul Phase Control Thyristor Module TT92N Elektrische Eigenschaften / Electrical properties , letter O RMS, f = 50 Hz, t = 1 min RMS, f = 50 Hz, t = 1 sec Isolations-Prüfspannung insulation
Eupec
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TD92N DT92N NT92N 4650N EUPEC TT 200 KM14 A8/02

4650N

Abstract: DT104N N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT104N , IEC 747-6 f = 50 Hz, iGM = 0,6 A, diG/dt = 0,6 A/µs (diT/dt)cr Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj max, vD = 0,67 VDRM 6.Kennbuchstabe / 6th letter F , /page 1/12 N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module , 0,67 VDRM dvD/dt = 20 V/µs, -diT/dt = 10 A/µs 5.Kennbuchstabe / 5th letter O RMS, f = 50 Hz, t =
Eupec
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TD104N DT104N A1/02

thyristor TD 42 F

Abstract: thyristor tt 18 f 1000 Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Modul TT104N TT104N , Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs , , vD = 0,67 VDRM 6.Kennbuchstabe / 6th letter C 6.Kennbuchstabe / 6th letter F (dvD/dt)cr Tvj = , N Netz-Thyristor-Modul Phase Control Thyristor Modul TT104N Elektrische Eigenschaften , /µs 5.Kennbuchstabe / 5th letter O RMS, f = 50 Hz, t = 1 min RMS, f = 50 Hz, t = 1 sec
Eupec
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thyristor tt 18 f 1000 A7/90

TT92N

Abstract: thyristor TD 42 F N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT92N , Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 f = 50 Hz, iGM = 0,6 A, diG/dt = 0,6 , Tvj = Tvj max, vD = 0,67 VDRM 6.Kennbuchstabe / 6th letter F (dvD/dt)cr Charakteristische Werte , Netz-Thyristor-Modul Phase Control Thyristor Module TT92N Elektrische Eigenschaften / Electrical properties , letter O RMS, f = 50 Hz, t = 1 min RMS, f = 50 Hz, t = 1 sec Isolations-Prüfspannung insulation
Eupec
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PULSE thyristor TT92N.K.-K thyristor tt 92 n 1200

thyristor TD 42 F

Abstract: 4650N Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Modul TT92N TT92N , Stromsteilheit critical rate of rise of on-state current DIN IEC 747-6 f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs , , vD = 0,67 VDRM 6.Kennbuchstabe / 6th letter C 6.Kennbuchstabe / 6th letter F (dvD/dt)cr Tvj = , Phase Control Thyristor Modul Elektrische Eigenschaften / Electrical properties Charakteristische , /dt = 20 V/µs, -diT/dt = 10 A/µs 5.Kennbuchstabe / 5th letter O tq RMS, f = 50 Hz, t = 1 min
Eupec
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