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Part Manufacturer Description Datasheet BUY
ACW007 Ametherm Inc NTC THERMISTOR 100K OHM BEAD visit Digikey
NT3 10269 Ametherm Inc THERMISTOR NTC 1.0K 10% visit Digikey
NT05 15291-A Ametherm Inc NTC THERMISTOR 1.5K OHM RADIAL visit Digikey
ACC101 Ametherm Inc NTC THERMISTOR 2.252K OHM BEAD visit Digikey
ACC011 Ametherm Inc NTC THERMISTOR 2.252K OHM BEAD visit Digikey
PANW 103395 Ametherm Inc THERMISTOR NTC 10KOHM visit Digikey

thermistor+ntc+45k

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 50 100 100 100 100 150 200 ~:g~ 5.8k 4.5k 4.0k 4.0k 4.5k 4.5k 4.5k 4.0k 4.UK 4.5k 4.5k 4.5k 4.0k 4.0k 4.5k 4.5k 4.5k 4.0k ggg Silcion Rectifiers, 10 80 lN3288 lN3288A lN3289 lN3289A lN3290 , 00·9 00·9 StF·M20 StF·M20 00·9 00·9 00·9 StF·M20 :g~ 4.5k 4.5k 4.0k 4.5k 11~ ~gg 250 250 Nihon Inter Electronics
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20M20 70H80A ln2054 70H40 70H20A 70H30A 70H80 70H40A KG01420SX KG01421SX N2789 KG01422SX 55HQ020 N2128
Abstract: Marking NSC Drawing 1k Units Tape and Reel L041B Transport Media LDE06A 4.5k Units Tape and Reel 1k Units Tape and Reel L042B 4.5k Units Tape and Reel 1k Units Tape and Reel L043B 4.5k Units Tape and Reel 1k Units Tape and Reel L051B 4.5k Units Tape and Reel 1k Units Tape and Reel L044B 4.5k Units Tape and Reel 1k Units Tape and Reel L078B 4.5k Units Tape and Reel 1k Units Tape and Reel L079B 4.5k Units Tape and Reel 1k Units Tape and Reel L080B National Semiconductor
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LP8340 LP8340C LP8340I LP8340CLD-ADJ LP8340CLDX-ADJ marking l078b LP8340-ADJ LP8340-1 LP8340-2
Abstract: Tape and Reel L045B Transport Media LDE06A 4.5k Units Tape and Reel 1k Units Tape and Reel L046B 4.5k Units Tape and Reel 1k Units Tape and Reel L047B 4.5k Units Tape and Reel 1k Units Tape and Reel L048B 4.5k Units Tape and Reel 1k Units Tape and Reel L049B 4.5k Units Tape and Reel 1k Units Tape and Reel L073B 4.5k Units Tape and Reel 1k Units Tape and Reel L074B 4.5k Units Tape and Reel 1k Units Tape and Reel L075B 4.5k Units Tape and Reel 1k Units Tape National Semiconductor
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LP8345 LP8345-ADJ 3399 transistor L077B LP8345CLD-ADJ LP8345CLDX-ADJ LP8345C LP8345I LP8345-3 LP8345-1
Abstract: Topr Tstg VR Max. (V) (°C) (°C) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386-8K s , 0.6 0.38 0.43 0.59 1.12 S2386-44K 9.6 12 20 3.6 1600 0.5 25 S2386-45K 12 17 30 5.5 2300 0.3 S2386 , vs. load resistance (Typ. Ta=25 °C, VR=0 V) 1 ms 80 % 40° 60 % 40° 100 us S2386-8K S2386-45K , ) S2386-5K 1 T S2386-18K/-18L S2386-45K 1 nA 10 T 100 pA S2386-8K SHUNT RESISTANCE 100 G , /-45K 10 fA 0.01 0.1 1 10 100 100 k -20 0 20 40 60 80 REVERSE Hamamatsu Photonics
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borosilicate S2386-45K DA0104EA D-82211 SE-171 KSPD1035E03
Abstract: ratings Type No. S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386-8K Dimensional outline , -44K 9.6 12 20 3.6 1600 0.5 25 1.4 × 10-15 S2386-45K 12 17 30 5.5 2300 0.3 S2386-8K 26 33 50 , ) 1 ms 30° 100 us 80 % S2386-8K S2386-45K 60 % S2386-18L 50° 40° 50° 40 % , DARK CURRENT 100 pA 100 G S2386-45K 10 G S2386-44K 1 G 100 M 10 M S2386-18K/-5K/-44K/-45K 1 M 10 fA 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) 100 k -20 0 20 40 Hamamatsu Photonics
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IR LED and photodiode TO-18 KSPD1035E02
Abstract: -5K S2386-44K S2386-45K S2386-8K (mm) (mm) (mm2) TO-18 1.1 × 1.1 5.7 13 , ) S (A/W) p p (nm) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386 , ° 100 us 80 % S2386-45K 60 % 50° S2386-18L 40° 10 us 50° 40° S2386-8K 1 , -18K/-18L S2386-8K 100 pA 100 G S2386-45K 10 G 10 pA S2386-44K 1 G 1 pA 100 M 10 M 100 fA S2386-18K/-5K/-44K/-45K 10 fA 0.01 0.1 1 10 1 M 100 100 k - -
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2s2386 PA-100 KSPDB0110JA KSPDB0058JB KSPDB0112JC KSPDB0111JA S2386-18K/-5K/-44K/-45K KSPDB0113JD
Abstract: ratings Type No. S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386-8K Dimensional outline , -44K 9.6 12 20 3.6 1600 0.5 25 1.4 × 10-15 S2386-45K 12 17 30 5.5 2300 0.3 S2386-8K 26 33 50 , ) 1 ms 30° 100 us 80 % S2386-8K S2386-45K 60 % S2386-18L 50° 40° 50° 40 % , DARK CURRENT 100 pA 100 G S2386-45K 10 G S2386-44K 1 G 100 M 10 M S2386-18K/-5K/-44K/-45K 1 M 10 fA 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) 100 k -20 0 20 40 Hamamatsu Photonics
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PDA0104EA KSPD1035E01
Abstract: material * /K /L /K /K /K /K TO-8 Package (mm) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386 , Peak response sensitivity range wavelength p (nm) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K , resistance 1 ms (Typ. Ta=25 °C, VR=0 V) 100 us S2386-8K/-14 S2386-45K 60 % S2386-18L Rise , -5K S2386-18K/-18L S2386-45K 100 pA S2386-8K/-14 100 G Shunt resistance Dark current 10 pA 10 G S2386-44K 1 G 100 M 10 M 1 pA 100 fA S2386-18K/-5K/-44K/-45K 1 M 100 k -20 10 fA Hamamatsu Photonics
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S2386-14 PDA0185EA KSPD1035E04
Abstract: -18L S2386-5K S2386-44K S2386-45K S2386-8K Effective active area (mm) (mm2) TO-18 /K /L , -18L S2386-5K S2386-44K S2386-45K S2386-8K 320 to 1100 (nm) 960 Short circuit current Isc , 40° 60 % S2386-8K S2386-45K S2386-18L 50° 40° 50° Rise time Photo sensitivity , pA Shunt resistance 10 pA 1 pA S2386-45K 10 G S2386-44K 1 G 100 M 10 M 100 fA S2386-18K/-5K/-44K/-45K 1 M 10 fA 0.01 0.1 1 10 100 100 k -20 0 Reverse Hamamatsu Photonics
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S2386 series KSPD1035E05
Abstract: material * /K /L /K /K /K /K TO-8 Package (mm) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386 , Peak response sensitivity range wavelength p (nm) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K , resistance 1 ms (Typ. Ta=25 °C, VR=0 V) 100 us S2386-8K/-14 S2386-45K 60 % S2386-18L Rise , -5K S2386-18K/-18L S2386-45K 100 pA S2386-8K/-14 100 G Shunt resistance Dark current 10 pA 10 G S2386-44K 1 G 100 M 10 M 1 pA 100 fA S2386-18K/-5K/-44K/-45K 1 M 100 k -20 10 fA Hamamatsu Photonics
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DA0185EA
Abstract: area (mm) (mm2) TO-18 Å'/K º/L S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K , (nm) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386-8K 320 to 1100 (nm) 960 , ms 20° 30° 100 Âus 80 % 40° 60 % S2386-8K S2386-45K S2386-18L 50° 40 , pA 1 pA S2386-45K 10 Gâ"¦ S2386-44K 1 Gâ"¦ 100 Mâ"¦ 10 Mâ"¦ 100 fA S2386-18K/-5K/-44K/-45K 1 Mâ"¦ 10 fA 0.01 0.1 1 10 100 100 kâ"¦ -20 0 Reverse voltage (V Hamamatsu Photonics
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Abstract: ratings Type No. S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386-8K Dimensional , S2386-45K 12 17 30 5.5 2300 0.3 S2386-8K 26 33 50 10 4300 0.2 10 * Window material K , % (Typ. Ta=25 °C, VR=0 V) 1 ms 30° 100 us 80 % S2386-8K S2386-45K 60 % S2386 , S2386-18K/-18L S2386-8K 100 pA 10 pA 1 pA 100 fA 100 G S2386-45K 10 G S2386-44K 1 G 100 M 10 M S2386-18K/-5K/-44K/-45K 1 M 10 fA 0.01 0.1 1 10 100 REVERSE Hamamatsu Photonics
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Abstract: Transport Media LDE06A 4.5k Units Tape and Reel 1k Units Tape and Reel L046B 4.5k Units Tape and Reel 1k Units Tape and Reel L047B 4.5k Units Tape and Reel 1k Units Tape and Reel L048B 4.5k Units Tape and Reel 1k Units Tape and Reel L049B 4.5k Units Tape and Reel 1k Units Tape and Reel L073B 4.5k Units Tape and Reel 1k Units Tape and Reel L074B 4.5k Units Tape and Reel 1k Units Tape and Reel L075B 4.5k Units Tape and Reel 1k Units Tape and Reel L076B National Semiconductor
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4925 B transistor L046 LP8345CDT LP8345CLD-2 DS200648
Abstract: 2.25K 2.5K 2.7K 3K 3.3K 3.5K 3.9K 4K 4.5K 4.7K 5K 5.6K 6K 6.8K 7K 7.5K 8K 8.2K 8.5K 9K 10K 1 IK 12K 12.5K 13.5K 15K 16K 17.5K 18K 20K 22K 22.5K 25K 27 K 30K 33K 35K 39K 40K 45K 47K 50K L & Lead GA , 900 IK 1.IK 1.2K 1.25K 1.5K 1.75K 1.8K 2K 2.2K 2.25K 2.5K 2.7K 3K 3.3K 3.5K 3.9K 4K 4.5K 4.7K Notes , 3K 3.3K 3.5K 3.9K 4K 4.5K 4.7K 5K 5.6K 6K 6.8K VC5E 7K 7.5K 8K 8.2K 9K 10K 12.5K 15K 17.5K 18K -
OCR Scan
VC5E vc10f VC5E 100 ohm resistor 225k RESISTOR 5.6K OHM VC10F 270 MIL-R-26 VC10F
Abstract: Max. Topr Tstg (V) (°C) (°C) S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386-8K s , 0.59 1.12 S2386-44K 9.6 12 20 3.6 1600 0.5 25 S2386-45K 12 17 30 5.5 2300 0.3 S2386-8K 26 33 50 10 4300 , =25 °C, VR=0 V) 1 ms 80 % 40° 60 % 40° 100 us S2386-8K S2386-45K RISE TIME S2386 , S2386-45K 1 nA 10 T 100 pA S2386-8K SHUNT RESISTANCE 100 G 10 G S2386-44K 1 G 100 M 10 M 1 M DARK CURRENT 10 pA 1 pA 100 fA S2386-18K/-5K/-44K/-45K 10 fA 0.01 0.1 Hamamatsu Photonics
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0104EA
Abstract: SPF-45K SHF-45K 45 55 SPF-55K SHF-55K 55 SBT-30K/37KSBT-55K 400V75kW SAMCO-IPF , 13 400VSHF SHF-30K SHF-37K SHF-45K SHF-55K 30kW 37kW 45kW 55kW 1 , 1400V 2AC400V 3 441Hz130Hz 55V10V20mA 6 15 400VSPF SPF-37K SPF-45K SPF , H1 H mm H H1 W W1 D SHF-30K 440 420 340 318 240 SHF-37K SHF-45K 550 , 10 D 440 420 340 318 240 SPF-45K SPF-55K 18 550 Sanken Electric
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SAMCO-vm05 samco 2kw inverter 3XYEB-105104 samco-ipf samco-i RS-232C RS-485 200VSBT H/150 P/120 75K/1
Abstract: pF 4.5k A 0.1 uF | C 100 pF 4.5k 0.1 uF | 100 pF 0.1 uF | 100 pF 4.5k 4.5k 0.1 uF | 100 pF Vcc 4.5k 10 uF 4.5k 0.1 uF | 100 pF 4.5k D E Vcc F 0.1 uF | 100 pF 4.5k B G H J K L 0.1 uF | 100 pF M N Vcc P Applied Micro Circuits
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S2067 BLM31B601S S2062 VJ0612
Abstract: Sequential READ: up to 500MB/s · Sequential WRITE: up to 260MB/s · Random 4K READ: 45K IOPS · Random 4K , 260MB/s · Random 4K READ: 45K IOPS · Random 4K WRITE: 50K IOPS 128GB* SATA 6Gb/s · Sequential READ: up to 500MB/s · Sequential WRITE: up to 175MB/s · Random 4K READ: 45K IOPS · Random 4K WRITE , Random 4K READ: 45K IOPS · Random 4K WRITE: 20K IOPS *Some of the listed storage capacity is used for -
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512GB 6920G CT512M4SSD1 CT256M4SSD1 CT128M4SSD1 CT064M4SSD1 acer aspire lenovo t420 crucial 256GB
Abstract: 100 5 0 -20 Top view 0 20 40 60 80 100 ILB01691 1uF VCC 45k OUT1 45k 85k IN2 Control Block circuit 85k Thermal shutdown circuit IN1 Stepping motor OUT2 45k OUT3 85k IN3 OUT4 45k 85k IN4 300 GND 1.35V IN1IN4 INM -
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LB1800CL ILB01762 ILB01763 ILB01764 ILB01766 ILB01767 in3h NA0352 LB1800CL/2 ECSP2828-12 B8-8896 A0352-1/8
Abstract: HIGH VOLTAGE hvjxi5k-45k SILICON RECTIFIERS MULT I STAC Fast Recovery, Medium Current FEATURES DESCRIPTION â'¢ PIV: From 15kV to 45kV The HVJX MULT I STAC medium current â'¢ 200nS Reverse , ) : Dimensions in inches and (millimeters) HVJX15K-45K 250 t .01 (6.35) ± (.254) 2.0 Min. (50.8) PART NUMBER , HVJX45K 3.5 ± .02 88.9 ± .508 PA Reformatted 12/79 392 m _ unitrode HVJX15K-45K Type ELECTRICAL , 50 30 5 2.5 3.0 76.2 HVJX 40K 40000 0.1 25 72 200 50 30 5 2.5 3.5 88.9 HVJX 45K 45000 0.1 25 72 200 -
OCR Scan
HVJX15K HVJX20K HVJX25K HVJX30K HVJX35K HVJX40K HVJX15K-45K HVJX22
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