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TC58NVG1S3ETAI0 Toshiba America Electronic Components IC 256M X 8 FLASH 3.3V PROM, PDSO48, 12 X 20 MM, 050 MM PITCH, PLASTIC, TSOP-48, Programmable ROM visit Digikey Buy
TC58NVG1S3HBAI6 Toshiba America Electronic Components 2GB SLC NAND 24NM BGA 6.5X8 (EEPROM) visit Digikey Buy
TC58NVG0S3HBAI4 Toshiba America Electronic Components 1GB SLC NAND 24NM BGA 9X11 (EEPROM) visit Digikey Buy
TC58NVG1S3HTAI0 Toshiba America Electronic Components 2GB SLC NAND TSOP 24NM LB (EEPROM) I-TEMP visit Digikey Buy
TC58NVG1S3HTA00 Toshiba America Electronic Components 2GB SLC NAND TSOP 24NM LB (EEPROM) visit Digikey Buy
TC58NVG3S0FTA00 Toshiba America Electronic Components 8GB SLC NAND TSOP 32NM LB (EEPROM) visit Digikey Buy

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tc58nvg Datasheet

Part Manufacturer Description PDF Type
TC58NVG0S3AFT Toshiba EEPROM, 1GBIT (128M, 8-BitS) CMOS NAND E2PROM Original
TC58NVG0S3AFT00 Toshiba 1 GBit CMOS NAND EPROM Original
TC58NVG0S3AFT05 Toshiba 1024 Mbits NAND EEPROM Original
TC58NVG0S3AFTI Toshiba EEPROM, 1GBIT (128M, 8-BitS) CMOS NAND E2PROM Original
TC58NVG1S3BFT00 Toshiba (TC58NVG1S8BFT00) 2 GBit CMOS NAND EPROM Original
TC58NVG1S3EBAI4 Toshiba TC58NVG1S3 - IC EEPROM 3V, Programmable ROM Original
TC58NVG1S3ETA00 Toshiba Memory, Integrated Circuits (ICs), IC EEPROM 2GBIT 25NS 48TSOP Original
TC58NVG1S3ETAI0 Toshiba Memory, Integrated Circuits (ICs), IC EEPROM 2GBIT 25NS 48TSOP Original
TC58NVG1S8BFT00 Toshiba TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M x 8 BIT/128M x 16 BIT) CMOS NAND E2PROM Original
TC58NVG2D4BFT00 Toshiba Flash Memory Original
TC58NVG2S0FTA00 Toshiba Memory, Integrated Circuits (ICs), IC FLASH 4GBIT 25NS 48TSOP Original
TC58NVG3S0FTA00 Toshiba Memory, Integrated Circuits (ICs), IC FLASH 8GBIT 25NS 48TSOP Original

tc58nvg

Catalog Datasheet MFG & Type PDF Document Tags

TC58NVG0S3EBAI4

Abstract: TC58NVG0S3EBA TC58NVG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND , implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG0S3E is a , · · · · · · Package P-TFBGA63-0911-0.80CZ 1 2011-03-01C TC58NVG0S3EBAI4 , 2 2011-03-01C TC58NVG0S3EBAI4 BLOCK DIAGRAM VCC VSS Status register I/O1 to I/O8 I/O
Toshiba
Original
TC58NVG0S3EBA tc58nvg0s3eta TC58NVG0S3ET TC58NVG0S3ETA00

TC58NVG2S3EBAI5

Abstract: TC58NVG2S3E TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND , implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG2S3E is a , · · · · · · Package P-TFBGA63-1013-0.80AZ 1 2010-07-13C TC58NVG2S3EBAI5 , 2 2010-07-13C TC58NVG2S3EBAI5 BLOCK DIAGRAM VCC VSS Status register I/O1 Address
Toshiba
Original
tc58NVG2S3

tc58NVG0s3Hbai4

Abstract: TC58NVG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT (128M ï'´ 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3HBAI4 is a single 3.3V 1Gbit (1,140,850,688bits , pages). The TC58NVG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address , -0911-0.80CZ (Weight: 0.15 g typ.) 8 bit ECC for each 512Byte is required. 1 2012-10-01C TC58NVG0S3HBAI4 , 2012-10-01C TC58NVG0S3HBAI4 BLOCK DIAGRAM VCC VSS Status register Address register I/O1 Column
Toshiba
Original

TC58NVG3S0FTA

Abstract: TC58NVG3S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT (1G × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND , TC58NVG3S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output , 512Byte is required. 1 2011-07-01C TC58NVG3S0FTAI0 PIN ASSIGNMENT (TOP VIEW) TC58NVG3S0FTAI0 à , TC58NVG3S0FTAI0 BLOCK DIAGRAM VCC VSS Status register Address register I/O1 Column buffer I/O
Toshiba
Original
TC58NVG3S0FTA

S1C33E07

Abstract: s1c37120 TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND , in a single block unit (128 Kbytes 4 Kbytes: 2112 bytes 64 pages). The TC58NVG2S3E is a serial-type , .) Package P-TFBGA63-1013-0.80AZ 1 2012-09-01 TC58NVG2S3EBAI5 PIN ASSIGNMENT (TOP VIEW) 1 A B C D , VCC VSS 2 2012-09-01 TC58NVG2S3EBAI5 BLOCK DIAGRAM VCC VSS Status register I/O1 to I/O8
Seiko Epson
Original
S1C33E07 s1c37120 I334 spp07 CFP400 NAND512W3A2BN6 32-BIT

TC58NVG2S3EBAI5

Abstract: TC58NVG2S3E TC58NVG3D1DTG00 8 gigabits January 2007 January 2007 TC58NVG4D1DTG00 16 gigabits March 2007 April 2007
Toshiba
Original
tc58nvg2s TC58NVG2S3EB Toshiba confidential NAND

sandisk microsd 2gb

Abstract: toshiba NAND Flash MLC Gbits (bit) TC58NVM9S3CTA00 TC58NVM9S3CBAJW TC58NVG0S3CTA00 TC58NVG0S3CBAJ5 TC58NVG0S3ETA00 * TC58NVG1S3CTA00 TC58NVG1S3CBAJX TC58NVG1S3ETA00 * TC58NVG2S3ETA00 * / (typ , -P-1220-0.50 · RoHS *: SLC TC58NVG3S0DTG00 TH58NVG4S0DTG20 32 Gbits TH58NVG5S0DTG20
Toshiba
Original
sandisk microsd 2gb toshiba NAND Flash MLC sandisk microsd Toshiba microSD Card 2GB TC58NVG4 tc58nvg3

TH58NVG4S0DTG20

Abstract: THGBM1G5D2EBAI7 TC58NVG0S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 , 64 pages). The TC58NVG0S3E is a serial-type memory device which utilizes the I/O pins for both , TC58NVG0S3ETA00 PIN ASSIGNMENT (TOP VIEW) TC58NVG0S3ETA00 ×8 NC NC NC NC NC NC RY / BY RE CE NC , 2 2010-05-21C TC58NVG0S3ETA00 BLOCK DIAGRAM VCC VSS Status register Address register
Toshiba
Original
THGBM1G5D2EBAI7 THGBM1G6D4EBAI4 THGBM1G4D1EBAI7 THGVS4G3D1EBAI8 THGBM1G8D8EBAI2 TH58NVG4 SCJ0004N TC58DVM92A3TA00 TC58DVM92A3BAJW TC58DVG02A3TA00 48-P-1220-0 P-TFBGA63-0813-0

TC58NVG0S3ETA00

Abstract: TC58NVG0S3ET , TC58DVG04B1FT TH58020FT, TC58DVG14B1FT , TH58DVG14B1FT TH58DVG24B1FT TC58NVG0S3AFT TH58NVG1S3AFT Release
Toshiba
Original
DIN2111 PA15 Time22 toshiba TC58NVG 80XX

K9K8G08U0

Abstract: SDTNGAHE0-256 TC58NYM9S3EBAI3 TC58NVG0S3ETA00 TC58NVG0S3ETAI0 TC58NVG0S3EBAI4 TC58NYG0S3ETA00 TC58NYG0S3ETAI0 TC58NYG0S3EBAI4 TC58NVG1S3ETA00 TC58NVG1S3ETAI0 TC58NVG1S3EBAI5 TC58NYG1S3ETA00 TC58NYG1S3ETAI0 TC58NYG1S3EBAI5 TC58NVG2S3ETA00 TC58NVG2S3ETAI0 TC58NVG2S3EBAI5 TC58NYG2S3ETA00 TC58NYG2S3ETAI0 , TH58DVG5S0ETA20 TH58DVG5S0ETAK0 TC58NVG3S0FTA00 TC58NVG3S0FTAI0 TH58NVG4S0FTA20 TH58NVG4S0FTAK0 , Gbits TC58NVG4S2ELA48 TC58NVG4S2ELAM8 TH58NVG5S2ELA48 TH58NVG5S2ELAM8 TH58NVG6S2ELA48
TM Technology
Original
TC58DVM92A1FT K9K8G08U0 SDTNGAHE0-256 HY27UG088G5 HY27UF084G2 SDTNGCHE0-2048 SDTNFAH-128 5062-LQ 512MB 128MB 256MB SDTNGEHE0-1024 SDTNGFHE0-2048

THGBM4G4D1HBAIR

Abstract: TH58TVG5S2FBA49 TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 , 64 pages). The TC58NVG1S3E is a serial-type memory device which utilizes the I/O pins for both , TC58NVG1S3ETA00 PIN ASSIGNMENT (TOP VIEW) TC58NVG1S3ETA00 ×8 NC NC NC NC NC NC RY / BY RE CE NC , 2 2010-05-21C TC58NVG1S3ETA00 BLOCK DIAGRAM VCC VSS Status register Address register
Toshiba
Original
THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0

TC58NVG1S3ETA00

Abstract: TC58NVG1S3E TC58NVG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND , implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG1S3E is a , · · Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.) 1 2012-09-01 TC58NVG1S3ETAI0 PIN ASSIGNMENT (TOP VIEW) TC58NVG1S3ETAI0 ×8 ×8 NC NC NC NC NC NC RY / BY RE CE NC NC VCC VSS
Toshiba
Original
TC58NVG1S3ETA TC58NVG1S3 PA16

TC58NVG1S3ETAI0

Abstract: TC58NVG1S3ET TC58NVG0S3AFT TH58NVG1S3AFT Release date: 08/25/2005 © 2005 iCreate Technologies Corporation This document
Toshiba
Original
TC58NVG1S3ET

SDTNFAH-512

Abstract: SDTNFAH-128 TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND , implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG2S3E is a , TC58NVG2S3ETA00 PIN ASSIGNMENT (TOP VIEW) TC58NVG2S3ETA00 ×8 ×8 NC NC NC NC NC NC RY / BY RE CE NC NC , TC58NVG2S3ETA00 BLOCK DIAGRAM VCC VSS Status register I/O1 to I/O8 I/O Control circuit Address register
TM Technology
Original
SDTNFAH-512 SDTNFAH-256 hy27uf082g2 HY27US08121 TH58DVG hy27us08281 5062-ZD NGCHE0-512 SDTNFCH-1024 SDTNGCHE0-1024 SDTNFDH-2048 SDTNGDHE0-2048

toshiba TC58NVG

Abstract: tc58NVG2S3 TC58NVG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND , implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages). The TC58NVG1S3E is a , TC58NVG1S3ETAI0 PIN ASSIGNMENT (TOP VIEW) TC58NVG1S3ETAI0 ×8 ×8 NC NC NC NC NC NC RY / BY RE CE NC NC , TC58NVG1S3ETAI0 BLOCK DIAGRAM VCC VSS Status register I/O1 to I/O8 I/O Control circuit Address register
Toshiba
Original
NAND read disturb TC58NYG2S3EBAI5 TC58NYG2S3E
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