500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TCWM13 HellermannTyton HANDI-PAK MARKER BOOK SYMBOLS visit Digikey Buy
80610596910 3M Interconnect WIRE MARKER A-Z, 0-15, SYMBOLS visit Digikey Buy
PESW-A-8Y Panduit Corp Wire Identification ISO WARNING SYMBOL LASER BEAM visit Digikey Buy
81227 Desco Industries Inc TAPE CLEAR W/SYMBOLS .5" X 72YDS visit Digikey Buy
81229 Desco Industries Inc TAPE CLEAR W/SYMBOLS 1" X 72YDS visit Digikey Buy
1513309-1 TE's AMP SYMBOL GEMINI 5 BAND FLEX ANTE visit Digikey Buy

symbol tranzorb

Catalog Datasheet MFG & Type PDF Document Tags

transistor 7150

Abstract: symbol tranzorb reading applications. 7-23 Recommended Operating Conditions Param eter Symbol Min. Max. Units , . sec/) % Volts "C "C lux 1. Measured scanning a symbol with 0.19 mm (0.0075 in.) narrow elements For , Absolute Maximum Ratings Param eter Symbol M in. Max. Units Storage Temperature Supply Voltage O utput , , T a = 25° C, unless otherwise noted) Min. Typ. Max. Units Conditions Symbol Supply Current , ITCHCRAFT 61HA6F 5 Pin 5 Pin 6 Pin TRANZORB P6KE 7 5 C (3 EACH) TRANZORB IS A REGISTERED TRAOEMARK
-
OCR Scan
transistor 7150 symbol tranzorb magnetic stripe integrated circuit HBCS-7100 HBCS-7000 HBCS-7050 HBCS-7150 HBCS-7998 HBCS-7999

TRANZORB

Abstract: teleco connected to 0V and upgrading D1 to a Tranzorb device (Motorola or STM 1.5KE82A). For lightning and power , Tranzorb is needed per linecard. The Codec which has been chosen to illustrate the use of the Ag1160 is , are with respect to ground unless otherwise stated. Parameter Symbol Min Max Units , with respect to ground unless otherwise stated. Parameter Symbol Min Typ Max Units V
Silver Telecom
Original
TRANZORB teleco 600R 800R C515 200-3400H 500-2500H

TRANZORB

Abstract: AG1460S protection is provided by steering diodes connected to 0V and upgrading D1 to a Tranzorb device (Motorola , (5KP75). Just one Tranzorb is needed per linecard. The audio signals which are on the 4 wire side of , Voltages are with respect to ground unless otherwise stated. Parameter Symbol Min Max Units , Voltages are with respect to ground unless otherwise stated. Parameter Symbol Min Typ Max
Silver Telecom
Original
AG1460S ZT21 ZT22 ZT23 ZT24 voip adapter circuit diagram

HKE Relay

Abstract: HKE 5v relay VBAT, this should be clamped with a Tranzorb device (Motorola or Protek 1.5KE56A for -48V battery). , diodes may be connected to the Tranzorb clamp on its own. This avoids injecting transients into VBAT , are with respect to ground unless otherwise stated. Parameter Symbol Min Max Units 1 , Conditions* - All Voltages are with respect to ground unless otherwise stated. Parameter Symbol Min , .7 August 2009 Data Sheet LOW COST PBX SLIC DC Electrical Characteristics* Symbol 1 Supply
-
Original
HKE Relay HKE 5v relay HKE Relay 5 pin hrs1h HKE Relay 5 relay omron G2E 2000R 3400H 300-3400H 300-600H 600-3400H 70VRMS

TRANZORB

Abstract: AG1460S connected to 0V and upgrading D1 to a Tranzorb device (Motorola or Semitron 1.5KE82A). For lightning and power cross protection, D1 should be upgraded further (5KP75). Just one Tranzorb is needed per , with respect to ground unless otherwise stated. Parameter Symbol Min Max Units -0.3 , are with respect to ground unless otherwise stated. Parameter Symbol Min Typ Max
Silver Telecom
Original
2-4 Wire active converter for telephone line ZT12

TRANZORB

Abstract: symbol tranzorb D1 to a Tranzorb device (Motorola or STM 1.5KE82A). For lightning and power cross protection, D1 should be upgraded further (General Semiconductor or Semitron 5KP75). Just one Tranzorb is needed per , . Parameter Symbol Min Max Units -0.3 5.5 V 1.8 W 1 DC Supply Voltage VCC , Symbol Min Typ Max Units V 1 DC Supply Voltage VCC 4.75 5.0 5.25 2
-
Original
tranzorb diode
Abstract: '¦ APTCV90TL12T3G Q1 & Q4 Absolute maximum ratings (per CoolMOSâ"¢) Symbol VDSS ID IDM VGS RDSon PD IAR , °C Unit V A V mΩ W A mJ Q1 & Q4 Electrical Characteristics (per CoolMOSâ"¢) Symbol , Unit µA Q1 & Q4 Dynamic Characteristics (per CoolMOSâ"¢) Symbol Characteristic Ciss Input , www.microsemi.com Unit V A V W 2-9 APTCV90TL12T3G â'" Rev 1 April, 2012 Symbol VCES APTCV90TL12T3G Q2 & Q3 Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Microsemi
Original
APT0502

6v tranzorb

Abstract: device) Symbol Characteristic VF RthJC Diode + tranzorb Forward Voltage Junction to Case Thermal , APTCV60TLM99T3G Q1 & Q4 Absolute maximum ratings (per CoolMOSTM) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS , (per CoolMOSTM) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain , ) Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf , 60 5 1.15 °C/W Max Unit pF nC ns Q2 & Q3 Absolute maximum ratings (per IGBT) Symbol
Microsemi
Original
6v tranzorb

cctv camera circuit diagram

Abstract: cctv circuit diagram . Protection The Ag9500 has an on-board SMAJ58CA Tranzorb to reduce the risk of over-voltages (exceeding the , Voltage Surge for 1ms Min VCC DC Supply Voltage 2 Symbol -40 +100 Note 1 , Operating Conditions Parameter Symbol Min Typ Max Units 48 57 V 36 V 70
Silver Telecom
Original
cctv camera circuit diagram cctv circuit diagram Ag9500 ethernet transformer centre tap circuit diagram electronic cctv circuit diagram 48V power supply Poe IEEE802 1500V

ag9205

Abstract: Ag9205-S achieved by connect Tranzorb diodes across each of the inputs; see Apps Note "ANX-POE-Protection". , Electrical Characteristics 10.1 Absolute Maximum Ratings1 Parameter Symbol -0.3 60 V VSURGE , Symbol Min Typ Max Units 48 57 V 36 V 70 Ta / OC 1 Input Supply
Silver Telecom
Original
ag9205 Ag9205-S Ag9200 Ag9203-S Ag9200-S 48V dc poe top 9200-S

PowerDsine

Abstract: TRANZORB rated surge input voltage. An inexpensive but effective solution can be achieved by connect Tranzorb , VSURGE DC Supply Voltage Surge for 1ms Min VCC DC Supply Voltage 2 Symbol -40 , Lockout 3 Operating Temperature 1 Symbol Min VIN Typ Max Units 52 36 57 57
Silver Telecom
Original
PowerDsine Ag5500 br2 BRIDGE POE with 24V output tsc9

symbol tranzorb

Abstract: ) Symbol Characteristic VF RthJC Diode + tranzorb Forward Voltage Junction to Case Thermal Resistance Test , Q1 & Q4 Absolute maximum ratings (per CoolMOSTM) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS , (per CoolMOSTM) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain , Dynamic Characteristics (per CoolMOSTM) Symbol Characteristic Input Capacitance Ciss Coss Output , nC ns 0.5 °C/W Q2 & Q3 Absolute maximum ratings (per IGBT) Symbol VCES IC ICM VGE PD
Microsemi
Original

TRANZORB

Abstract: AN1170-14 steering diodes connected to 0V and upgrading D1 to a Tranzorb device (Motorola or STM 1.5KE82A). For , Semitron 5KP75). Just one Tranzorb is needed per linecard. Ag1170 Ag1170 Tip 6.0 Approvals , respect to ground unless otherwise stated. Parameter Symbol Min Max Units -0.3 5.5 , * All Voltages are with respect to ground unless otherwise stated. Parameter Symbol Min Typ
Silver Telecom
Original
AN1170-14 AG1170 AG1170P-S3 AG1170-D3 Littlefuse 220003 AG1170-D5 1170-P 1170-D 1170P 1170-S 1170S
Abstract: rated Very rugged APTCV60TLM70T3G Q1 & Q4 Absolute maximum ratings (per CoolMOSâ"¢) Symbol VDSS , "¢) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain â'" Source , °C/W 2 - 12 APTCV60TLM70T3G â'" Rev 2 Symbol Ciss Coss Crss APTCV60TLM70T3G Q2 & Q3 Absolute maximum ratings (per IGBT) Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - , Q2 & Q3 Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Microsemi
Original

SiB914

Abstract: Si4230 to 34V, unless otherwise noted. (Note 2) SYMBOL PARAMETER CONDITIONS MIN VIN Input , along with the capacitance at the VIN node. D1 is an optional power clamp (TVS, Tranzorb) recommended , frequency. 0A 250ns/DIV 4365 F15 Figure 15. Transients During OV Fault When No Tranzorb (TVS) Is
Linear Technology
Original
LTC4365 LT3850 SiB914 Si4230 LTC4365ITS8 LTC4356 TSOT-23 LTC2914 LTC3727/LTC3727-1 LTC3827/LTC3827-1 LTC3835/LTC3835-1

LT3850

Abstract: °C. VIN = 2.5V to 34V, unless otherwise noted. (Note 2) SYMBOL PARAMETER CONDITIONS MIN VIN , optional power clamp (TVS, Tranzorb) recommended for applications where the DC input voltage can exceed , OV Fault When No Tranzorb (TVS) Is Used 4365f 14 LTC4365 PACKAGE DESCRIPTION TS8 Package 8
Linear Technology
Original
LT3845 QFN-28 SSOP-28 LT4256 LTC4260 LTC4352
Abstract: CR3 diode ratings and characteristics (per device) Symbol Characteristic VF RthJC Diode + tranzorb , APTCV60TLM45T3G Q1 & Q4 Absolute maximum ratings (per CoolMOSTM) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS , (per CoolMOSTM) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain , Dynamic Characteristics (per CoolMOSTM) Symbol Characteristic Input Capacitance Ciss Coss Output , ) Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Microsemi
Original
Abstract: APTCV60TLM70T3G Q1 & Q4 Absolute maximum ratings (per CoolMOSTM) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS , (per CoolMOSTM) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain , Dynamic Characteristics (per CoolMOSTM) Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff , APTCV60TLM70T3G Q2 & Q3 Absolute maximum ratings (per IGBT) Symbol VCES IC ICM VGE PD RBSOA Parameter Collector , Characteristics (per IGBT) Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Microsemi
Original
Abstract: characteristics (per device) Symbol Characteristic VF RthJC Diode + tranzorb Forward Voltage Junction to , Very rugged APTCV60TLM24T3G Q1 & Q4 Absolute maximum ratings (per CoolMOSâ"¢) Symbol VDSS ID , "¢) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain â'" Source , 2 - 12 APTCV60TLM24T3G â'" Rev 2 October, 2012 Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance APTCV60TLM24T3G Q2 & Q3 Absolute maximum ratings (per IGBT) Symbol VCES Microsemi
Original

TRANZORB

Abstract: HGTD8P50G1 NUMBER PACKAGE Symbol BRAND HGTD8P50G1 TO-251AA HGTD8P50G1S TO-252AA C G8P50G , , Unless Otherwise Specified PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVCES ICE , COLLECTOR-EMITTER VOLTAGE Test Circuits CIRCUIT 2 CIRCUIT 1 L = 100µH L = 100µH D1 = GSI TranZorb , TERM. 4 A 0.086 0.094 2.19 2.38 - SEATING PLANE b2 H1 SYMBOL A1 , TO-252AA SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE INCHES A E MILLIMETERS SYMBOL
Harris Semiconductor
Original
HGTD8P50G1S9A TA49015 EIA-481 ISO9000 1-800-4-HARRIS
Showing first 20 results.