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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil
HS9-6254RH-Q Intersil Corporation 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 visit Intersil

symbol transistor BC108

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR bc107 current gain

Abstract: bc107a amplification. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. PINNING PIN 1 2 3 BC107; BC108; BC109 DESCRIPTION emitter base collector, connected to the case QUICK REFERENCE DATA SYMBOL VcBO BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Plot hFE peak collector current total power dissipation DC current gain BC107 BC108 BC109 Tamb -25 °C lc = 2 mA , SYMBOL VcBO BC107 BC108; BC109 V CEO BC107; BC108; BC109 PARAMETER collector-base voltage
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BC107B BC108B TRANSISTOR bc107 current gain bc107a bc109c bc108a bc108c BC107A BC108A BC109B BC108C

bc108b

Abstract: bc109c BC107,A,B BC108B,C BC109B,C NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon , Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO ICBO ICBO BVCEO BVCEO BVEBO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) VBE(ON) hFE hFE hFE hFE hFE hFE SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 UNITS V V V mA mW °C °C/W
Central Semiconductor
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Transistor BC107 NPN BC108B transistor transistor bc107b for transistor bc107 Transistor BC109 Transistor BC107 100MH

Transistor BC109

Abstract: 8C109 Manufacturers of World Class Discrete Semiconductors BC107,A,B BC108,A,B,C BC109,B,C NPN SILICON TRANSISTOR JEDEC TO-18 CASE symbol bc 1 07 BC 108 BC 1 09 unit vcb0 50 30 30 V vces 50 30 30 V vce0 45 20 20 V , , BC108, BC109 series types are silicon NPN small signal transistors manufactured by the epitaxial planar , Junction Temperature Thermal Resistance Therma1 Res i s tance ELECTRICAL CHARACTERISTICS SYMBOL 1 cbo 1 , =150°C (BC107) VCB=20V, (BC108, BC109) VCB=20V, Ta=150°C (BC108 , 8C109) c=10uA (BC107) 0 = 1OyA (BC108, BC109
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applications of Transistor BC108 TRANSISTOR bc108 BC108 transistor BC109C datasheet DATASHEET Transistor BC109 symbol transistor BC108

TRANSISTOR bc108

Abstract: BC107 Transistor application notes ; BC108; BC109 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , NPN transistor in a TO-18; SOT18 metal package. PNP complements: BC177, BC178 and BC179. 2 3 MAM264 Fig.1 1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL
Philips Semiconductors
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BC107 Transistor application notes transistor BC107 specifications BC109c transistor bc108b equivalent BC108B application note bc107 transistor SCA54

transistor BC107 specifications

Abstract: BC107 Transistor application notes DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose , BC107; BC108; BC109 FEATURES PINNING · Low current (max. 100 mA) PIN · Low voltage (max , 2 NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 2 3 MAM264 Fig.1 1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO , - 30 V BC107 - 45 V BC108; BC109 - 20 V - 200 mA - 300
Philips Semiconductors
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TRANSISTOR DATASHEET BC107B BC107 equivalent transistors DATASHEET Transistor BC107 BC108 operation BC107 DATASHEET EQUIVALENT TRANSISTOR bc108 SCA55
Abstract: BC108 SEMICONDUCTOR FORWARD INTERNATIONAL BLECIRONKS LTD. NPN EPITAXIAL SILICON TRANSISTOR ~~ TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Bnitter-Base Voltage Collector Current Collector Disspatkm Junction Temperafare Storage Temperature Unit Vcbo Vceo Vebo 30 20 5 , Trainsition Frequence Noise Figure Symbol BVcbo BVceo BVebo Icbo Iebo Hfe Vce(sat) Vce(sat) Vbe -
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BC350

Abstract: BSX19 equivalent 2N3963 BC477 0.25 0.25 10/0.5 10/0.5 40 150 typ 360 360 377 95 PNP BC108 , High Gain Transistor 1400 70 4.5 70 - - - - R.F. Amplifier 750 50 4 , Transistor 500 Package Page 500 2N3137 500 f 800 2N5109 30 » (MHz) 1000 , D U S T R Y STAN D AR D B1-12 BC100 BC107 BC108 BC109 S G S -T H O M S O N S G S -T H , BC126 BC129 BC130 BC131 BC132 BC298 BC107 BC108 BC108 BC109 69 37 37 37 37 BC208
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BC350 BSX19 equivalent BC108 CROSS REFERENCE BFY40 SHORT DATA ON 2N744 BFW63 BC142 BC160 BC286 BC287 BC297 BC300

TAA550B

Abstract: 40mhz remote control transmitter circuit 125 0, + 70 Unit V V V V V mA µs W °C °C 491B-01.TBL Symbol VDD VPP VI VO , Symbol IPP Parameter Memory Supply Current R VOL Pull Down Resistor Output Low Voltage , DC ELECTRICAL CHARACTERISTICS (continued) Pin Symbol 18­19­20 V3 V2 V1 Parameter Test , consists of an open drain transistor. PIN 4 : FINE TUNING D/A (see Figure 5) A D/A converter with 16 , maximum content of the internal counter. The output consists of an open drain transistor which offers a
STMicroelectronics
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M491B TDA4433 DIP40 TAA550B 40mhz remote control transmitter circuit TAA550 M491B1 IC preset memory TV TUNING m491 16-STATION PM-DIP40

TAA550B

Abstract: TAA550 491B-02.EPS M491B ABSOLUTE MAXIMUM RATINGS Symbol VDD VPP VI VO (off) IOL Parameter Supply Voltage , + 70°C, VDD = +5V unless otherwise specified) Pin 2-Memory Supply Symbol IPP Parameter Memory , (continued) Pin 18­19­20 V3 V2 V1 Symbol VIL VIH IIL R VOL X4 X3 X2 X1 Pull-up Resistor VDD = 4.75 V, IOL = , transistor. PIN 4 : FINE TUNING D/A (see Figure 5) A D/A converter with 16-step resolution and a frequency of , . The output consists of an open drain transistor which offers a low impedance to ground when in the ON
STMicroelectronics
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TAA550-B BC177 pin configuration all ic data M708

TAA550B

Abstract: TAA550 125 0, + 70 Unit V V V V V mA µs W °C °C 491B-01.TBL Symbol VDD VPP VI VO , Symbol IPP Parameter Memory Supply Current R VOL Pull Down Resistor Output Low Voltage , DC ELECTRICAL CHARACTERISTICS (continued) Pin Symbol 18­19­20 V3 V2 V1 Parameter Test , consists of an open drain transistor. PIN 4 : FINE TUNING D/A (see Figure 5) A D/A converter with 16 , maximum content of the internal counter. The output consists of an open drain transistor which offers a
STMicroelectronics
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M708 B1 BSX93 eps 8192 Philips varicap TDA2320 tda2320 philips

TIS43

Abstract: BF257 Texas The Transistor and Diode Data Book for Design Engineers (Volume II) Northern European , Texas Instrum ents Lim ited THE TRANSISTOR AN D DIO DE D A T A BOOK VO LUME II Since 1954 when Texas Instruments introduced the first silicon transistor to the market place and later with the , Transistor and Diode Data Books for Design Engineers a useful addition to your Technical Library. CONTENTS TYPE NUMBER INDEX Page 7 GLOSSARY Page 13 TRANSISTOR SELECTION GUIDES Page
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TIS43 BF257 Texas equivalent of transistor bc214 BF195 equivalent is920 equivalent BF178 BS9300-C-738 BS9300-C-669 CV7671 BS9300-C-671 BS9300-C-670 V7672

BC237

Abstract: transistor BC107 specifications MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO , Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max , ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector ­ Emitter Breakdown Voltage (IC = 100 mAdc , MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol
ON Semiconductor
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BC237 mps4123 opposite transistor equivalent 2n5551 transistor equivalent book 2N5401 2n3819 equivalent transistor mps3646 equivalent 226AA MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1

Transistor 2N2905A

Abstract: BC237 Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC RJA TJ, Tstg PD Marking 11 , °C unless otherwise noted, common for Q1 and Q2, ­ minus sign for Q2 (PNP) omitted) Characteristic Symbol , MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 Symbol VOH Min 4.9 Typ - Max - Unit Vdc R1 7.0 15.4
ON Semiconductor
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Transistor 2N2905A transistor c-1000 MUN5311DW1T1 MMBF4860LT1 MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1

transistor marking wt

Abstract: BC237 625 5.0 1.5 12 ­ 55 to +150 - 25 Vdc mAdc mW mW/°C Watts mW/°C °C Symbol VCEO 25 - - 25 Vdc 1 2 3 , , Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector ­ Emitter , otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC , 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise
ON Semiconductor
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transistor marking wt motorola application note AN-569 modes of operation of transistor BC177 MOTOROLA TRANSISTOR 2N3819 2N2222 MPS2222 npn transistor hie for bc547b MPS6521 MPS6523 MPS6520/D MMPQ3799 MMSV3401T1 MPF970

bc547 spice model

Abstract: SPICE model BC237 . It allows the external transistor to have its emitter/source directly grounded and still operate with , , and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six , ) Enable Voltage (Pin 5) Symbol VCC TA Tstg TJ VCEO VENBL Value 15 ­40 to +85 ­65 to +150 150 ­15 VCC Unit , Resistance, Junction to Ambient Symbol PD 150 1.2 RJA 833 Max Unit mW mW/°C °C/W REV 1 Motorola , Symbol VCC ICC Min 1.8 - Typ 2.75 130 Max 10 200 Unit Volts µA V(BR)CEO2 Vref 15 Volts Volts
ON Semiconductor
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bc547 spice model SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE bc237 SPICE model MDC5001T1 MPF971 MPF3821 MPF3822 MPF4856 MPF4857

BC237

Abstract: 2N2904 PNP Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon COLLECTOR 3 2 , 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value , Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector ­ Emitter Breakdown Voltage , MPS3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol
ON Semiconductor
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2N2904 PNP Transistor MPF4858 MPF4859 MPF4860 MPF4861 MPQ6501 MPS3638

BC237

Abstract: transistor bc107b equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon MPSA20 , Storage Junction Temperature Range Symbol VCEO VCBO IC PD PD TJ, Tstg Value 40 4.0 100 625 5.0 1.5 12 ­ 55 , Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min , 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS
ON Semiconductor
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transistor bc107b equivalent BC107B, MOTOROLA MPS3866 MPS4123 MPS4125 MPS4258 MPS5771 MPS6520

transistor 2N5458

Abstract: BC237 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN2211T1 SERIES Motorola Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE
ON Semiconductor
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transistor 2N5458 2N930 NPN transistor FREE BC848 2N5551 MPS2222A 2N5401 BAS16LT1 MMBF4391LT1 MMBF5457LT1

BC237

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , °C Symbol VCBO VCEO IC PD R1 PIN1 R2 BASE (INPUT) PIN2 EMITTER (GROUND) PIN3 COLLECTOR (OUTPUT
ON Semiconductor
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70/SOT MUN5111T1 2N5486 MMBT5551LT1 MMBV2103LT1 MMPQ3725

BC237

Abstract: MPS-A70 equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 , Temperature Range Symbol VCEO VEBO IC PD PD TJ, Tstg Value ­40 ­4.0 ­100 625 5.0 1.5 12 ­ 55 to +150 Unit Vdc , , Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF , CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON
ON Semiconductor
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MPS-A70 equivalent MPSA70 MMBV3401LT1 MMBFJ175LT1 MPF4391RLRA 2N5639 2N5638RLRA
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