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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TBAW56
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 80 V, 0.215 A, SOT23 |
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HN1D05FE
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Toshiba Electronic Devices & Storage Corporation
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Switching Diode, 400 V, 0.1 A, ES6 |
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7UL2T125FK
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Toshiba Electronic Devices & Storage Corporation
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One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC |
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TC75S102F
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Toshiba Electronic Devices & Storage Corporation
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Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 |
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7UL2T126FK
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Toshiba Electronic Devices & Storage Corporation
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One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC |
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