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2N3055AG ON Semiconductor 15 A, 60 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY visit Digikey Buy
2N3055G ON Semiconductor 15 A, 60 V NPN Bipolar Power Transistor, TO-204 (TO-3), 100-FTRAY visit Digikey Buy
JAN2N3055 Microsemi Corporation Power Bipolar Transistor, 15A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy
ESDAXLC5-1U2 STMicroelectronics Low clamping, Single Line Unidirectional ESD Protection for high speed interface visit Digikey
LDL212DR STMicroelectronics 1.2A Low Drop Linear Regulator IC visit Digikey Buy
TSX3704IQ4T STMicroelectronics Micropower (5uA) 16V quad CMOS comparator, push pull output visit Digikey

st+2n3055

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Abstract: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , . operating junction temperature For PNP type voltage and current values are negative 2N3055 MJ2955 2 STMicroelectronics
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2n3055 malaysia 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955
Abstract: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , ct u od r P e let o bs O Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER STMicroelectronics
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ID4079
Abstract: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V , 2N3055, MJ2955 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless STMicroelectronics
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Abstract: 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 , 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C , 2N5339 2N5339 2N3055 2N3055 2N3055 1/35 Bipolar Transistors Cross Reference INDUSTY STANDARD , 2/35 ST REPLACEMENT ST NEAREST PREFERRED 2N3055 2N5038 2N5153 2N5154 2N5038 STMicroelectronics
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DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI 2N3016 2N3021 2N3022 2N3023 2N3024 2N3196
Abstract: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 Package Packaging MJ2955 TO-3 tray 1/7 . 7 2N3055 MJ2955 Absolute maximun rating 1 , 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER , values are negative 2N3055 MJ2955 2 Electrical characteristics Electrical characteristics -
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JESD97 0015923C hfe 2n3055 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier 2n3055 25 2n3055 pnp
Abstract: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case , V 70 V 1 3 V V 1.5 V 70 2N3055 / MJ2955 TO-3 MECHANICAL DATA mm DIM STMicroelectronics
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2N3055 JAPAN pnp transistor 2N3055 2N3055 specification MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055/MJ2955 P003F
Abstract: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , types voltage and current values are negative. 2/4 1 3 V V 1.8 V 70 2N3055 STMicroelectronics
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2N3055 series voltage regulator MJ2955 mexico 2n3055 circuit diagram 2n3055 voltage regulator 2N3055 power amplifier circuit complementary npn-pnp
Abstract: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Value NPN V CBO Collector-Base Voltage (IE = 0) V CER V CEO V EBO 2N3055 PNP Un it , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , 1.5 % For PNP types voltage and current values are negative. 2/4 70 2N3055 / MJ2955 TO STMicroelectronics
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t 2N3055 Transistor MJ2955 data transistor 2n3055 value of 2n3055 internal schematic diagram for 2n3055
Abstract: 2N3055 SILICON NPN TRANSISTOR . STM PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended tor power , Junction T em perature V CEO V ebo lc Ib Plot Tstg Tj °c °c 1/4 June 1998 2N3055 , 2/4 2N3055 TO-3 MECHANICAL DATA mm DIM. MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 , 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 inch P003F 3/4 2N3055 Information -
OCR Scan
2N3055 NPN Transistor 2N3055 transistor power transistor 2n3055 transistor B 892 2N3055 silicon
Abstract: ) * Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width s 300 us, Duty Cycle s 2.0%. fT h , Vdc VBE(on) _ Adc - fhfe - kHz 2N3055, MJ2955 20 *· % ST 10 -1 , Data 3-3 2N3055 M J2955 t V, VOLTAGE (VOLTS) Vce , COLLECTOR-EMITTER vaTAGE (VOLTS -
OCR Scan
2n3055 motorola transistor 2N 3055 2n 3055 Motorola 3055 adc 305-5 2N3055-1
Abstract: Quality In-house Manufacturing 2N3055 BAR43 1.5KE3ARL SMAJ10A ST62TXX 27C256 Lo w C o s t , Quality In-house Manufacturing 2N3055 BAR43 1.5KE3ARL SMAJ10A ST62TXX 27C256 Lo w C o s t , Just-In-Time Delivery Quality In-house Manufacturing 2N3055 BAR43 1.5KE3ARL SMAJ10A ST62TXX STMicroelectronics
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L7805CZ 93c46 st NE555 ST NE555 ne555 st TIP122
Abstract: 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N6179 2N6181 2N3054 .2N5955 2N5497 2N6106 [2N3055] r|_2N6247jl L 2N3771 J 2N3772 2N5575 60 to 150 , 2N3055 407 TX2N3584 384 2N5039 439 2N1480 207 2 N1486 180 TX2N3055 407 2N3585 384 TX2N5039 439 2N1481 -
OCR Scan
2N5295 RCA 40250 RCA 40250 transistor st bux Transistor 40347 transistor RCA 528 rca 2n6254 ITO-391- ITO-220 ITO-2201 ITO-31 2N1482 2N5786
Abstract: class 2.3 Power modules (Example) B) JEDEC METHOD (USA) (Example) 2N3055 C) PRO ELECTRON METHOD -
OCR Scan
ST100Q22 TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA transistors 2SA HF VHF power amplifier module BF422 BU208
Abstract: 2N3055 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N3055 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3055 at our online store! 2N3055 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3055 Information Did you Know , Request a Quote Test Houses 2N3055 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V American Microsemiconductor
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2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit transistors 2n3055 STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 us, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 us 250 us 2N3055, MJ2955 50 us dc 1 ms There are two limitations on the power handling ON Semiconductor
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2n3055 application 2N3055 typical applications pin out TRANSISTOR 2n3055 transistor 2n3055 h parameters DC variable power with 2n3055 2n3055 equal 204AA 2N3055/D
Abstract: ~ T -3 3 -/3 General-Purpose Power Transistors_ 2N3055 File Number 1699 , operating area TERMINAL DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor intended for a wide , General-Purpose Power Transistors 2N3055 ELECTRICAL CHARACTERISTICS, At Case Temperature , (A) Fig. 1 - Power dissipation vs. temperature derating curve fo r 2N3055. Fig . 2 - Typical dc-beta characteristics (o r 2N3055. DE | 3 A 7 S D Û l ' D D 1 7 3 5 4 b 3875081 G E -
OCR Scan
RCA-2N3055 KCS-27516 rca 2n3055 2N3055 curve RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA TQ-204AA/TO-3
Abstract: 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , . (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on , Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 300 VCE = 4.0 V TJ = 150Â ON Semiconductor
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2N3055 power amplifier circuit diagram 2n3055 application note
Abstract: 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 , 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 2N5876 BDW51B 2N3055 BDW51B BDW51B BDW51B BDW51B 2N5336 2N5336 2N5336 2N3439 , 2N3792 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 BDW52C BDW51C 2N3055 BDW51C BDW51C BDW51C BDW51C 2N5338 2N5338 2N5338 -
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BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235
Abstract: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055/D 2N3055, MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ON Semiconductor
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2n3055h mj2955 safe operating area Mj2955 power transistor OF transistor 2n3055 to-3 package MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier
Abstract: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 us, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES Motorola
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2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 TO-3 2n3055 datasheet 2N3055* motorola motorola power transistor 2N3055 equivalent transistor 2n3055
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