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STG4160BJR STMicroelectronics Low voltage 0.5 Ohm single SPDT switch with break-before-make feature and 15 kV ESD protection visit Digikey
TSV6290ICT STMicroelectronics Rail-to-rail input/output 5V CMOS Op-Amp, micro-power (29uA), GBP=1.3MHz, single with standby visit Digikey
TSV6292IST STMicroelectronics Rail-to-rail input/output 5V CMOS Op-Amps, micro-power (29uA), GBP=1.3MHz, dual visit Digikey
TSV6393AIST STMicroelectronics Rail-to-rail input/output 5V CMOS Op-Amps, micro-power (60uA), GBP=2.4MHz, small offset, dual with standby visit Digikey
TSV6293IST STMicroelectronics Rail-to-rail input/output 5V CMOS Op-Amps, micro-power (29uA), GBP=1.3MHz, dual with standby visit Digikey
STI76NF75 STMicroelectronics 80A, 75V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 visit Digikey

st+2n3055

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055 , Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage , . operating junction temperature For PNP type voltage and current values are negative 2N3055 MJ2955 2 STMicroelectronics
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2n3055 malaysia 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955
Abstract: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , ct u od r P e let o bs O Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V VCER STMicroelectronics
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ID4079
Abstract: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features â'¢ Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V , 2N3055, MJ2955 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless STMicroelectronics
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Abstract: 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 , 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C , 2N5339 2N5339 2N3055 2N3055 2N3055 1/35 Bipolar Transistors Cross Reference INDUSTY STANDARD , 2/35 ST REPLACEMENT ST NEAREST PREFERRED 2N3055 2N5038 2N5153 2N5154 2N5038 STMicroelectronics
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DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI 2N3016 2N3021 2N3022 2N3023 2N3024 2N3196
Abstract: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 Package Packaging MJ2955 TO-3 tray 1/7 . 7 2N3055 MJ2955 Absolute maximun rating 1 , 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER , values are negative 2N3055 MJ2955 2 Electrical characteristics Electrical characteristics -
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JESD97 0015923C hfe 2n3055 2n3055 audio amplifier mj2955 TO-3 2n3055 amplifier 2n3055 25 2n3055 pnp
Abstract: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO , Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case , V 70 V 1 3 V V 1.5 V 70 2N3055 / MJ2955 TO-3 MECHANICAL DATA mm DIM STMicroelectronics
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2N3055 JAPAN pnp transistor 2N3055 2N3055 specification MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055/MJ2955 P003F
Abstract: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , types voltage and current values are negative. 2/4 1 3 V V 1.8 V 70 2N3055 STMicroelectronics
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2N3055 series voltage regulator MJ2955 mexico 2n3055 circuit diagram 2n3055 voltage regulator 2N3055 power amplifier circuit complementary npn-pnp
Abstract: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Value NPN V CBO Collector-Base Voltage (IE = 0) V CER V CEO V EBO 2N3055 PNP Un it , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , 1.5 % For PNP types voltage and current values are negative. 2/4 70 2N3055 / MJ2955 TO STMicroelectronics
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t 2N3055 Transistor MJ2955 data transistor 2n3055 value of 2n3055 internal schematic diagram for 2n3055
Abstract: 2N3055 SILICON NPN TRANSISTOR . STM PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended tor power , Junction T em perature V CEO V ebo lc Ib Plot Tstg Tj °c °c 1/4 June 1998 2N3055 , 2/4 2N3055 TO-3 MECHANICAL DATA mm DIM. MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 , 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 inch P003F 3/4 2N3055 Information -
OCR Scan
2N3055 NPN Transistor 2N3055 transistor power transistor 2n3055 transistor B 892 2N3055 silicon
Abstract: ) * Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width s 300 us, Duty Cycle s 2.0%. fT h , Vdc VBE(on) _ Adc - fhfe - kHz 2N3055, MJ2955 20 *· % ST 10 -1 , Data 3-3 2N3055 M J2955 t V, VOLTAGE (VOLTS) Vce , COLLECTOR-EMITTER vaTAGE (VOLTS -
OCR Scan
2n3055 motorola transistor 2N 3055 2n 3055 Motorola 3055 adc 305-5 2N3055-1
Abstract: Quality In-house Manufacturing 2N3055 BAR43 1.5KE3ARL SMAJ10A ST62TXX 27C256 Lo w C o s t , Quality In-house Manufacturing 2N3055 BAR43 1.5KE3ARL SMAJ10A ST62TXX 27C256 Lo w C o s t , Just-In-Time Delivery Quality In-house Manufacturing 2N3055 BAR43 1.5KE3ARL SMAJ10A ST62TXX STMicroelectronics
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L7805CZ 93c46 st NE555 ST NE555 ne555 st TIP122
Abstract: 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , -50W 2N5493 2N5492 VCER(susl -65V hfE â  20-100 ® 2.5 A fT = 0.8 MHz min 2N3055 VCERlsusl -70V hFE â  20-70 , 2N6179 2N6181 2N3054 .2N5955 2N5497 2N6106 [2N3055] r|_2N6247jl L 2N3771 J 2N3772 2N5575 60 to 150 , 2N3055 407 TX2N3584 384 2N5039 439 2N1480 207 2 N1486 180 TX2N3055 407 2N3585 384 TX2N5039 439 2N1481 -
OCR Scan
2N5295 RCA 40250 RCA 40250 transistor Transistor 40347 rca 2n6254 transistor RCA 528 st bux ITO-391- ITO-220 ITO-2201 ITO-31 2N1482 2N5786
Abstract: class 2.3 Power modules (Example) B) JEDEC METHOD (USA) (Example) 2N3055 C) PRO ELECTRON METHOD -
OCR Scan
ST100Q22 TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA transistors 2SA HF VHF power amplifier module BF422 BU208
Abstract: 2N3055 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N3055 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3055 at our online store! 2N3055 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3055 Information Did you Know , Request a Quote Test Houses 2N3055 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V American Microsemiconductor
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2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit transistors 2n3055 STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 us, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 us 250 us 2N3055, MJ2955 50 us dc 1 ms There are two limitations on the power handling ON Semiconductor
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2n3055 application 2N3055 typical applications pin out TRANSISTOR 2n3055 transistor 2n3055 h parameters DC variable power with 2n3055 2n3055 equal 204AA 2N3055/D
Abstract: ~ T -3 3 -/3 General-Purpose Power Transistors_ 2N3055 File Number 1699 , operating area TERMINAL DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor intended for a wide , General-Purpose Power Transistors 2N3055 ELECTRICAL CHARACTERISTICS, At Case Temperature , (A) Fig. 1 - Power dissipation vs. temperature derating curve fo r 2N3055. Fig . 2 - Typical dc-beta characteristics (o r 2N3055. DE | 3 A 7 S D Û l ' D D 1 7 3 5 4 b 3875081 G E -
OCR Scan
RCA-2N3055 KCS-27516 rca 2n3055 2N3055 curve RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA TQ-204AA/TO-3
Abstract: 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã , . (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on , Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 300 VCE = 4.0 V TJ = 150Â ON Semiconductor
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2N3055 power amplifier circuit diagram 2n3055 application note
Abstract: 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 , 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 2N5876 BDW51B 2N3055 BDW51B BDW51B BDW51B BDW51B 2N5336 2N5336 2N5336 2N3439 , 2N3792 2N3055 BUV23 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 2N3792 TIP2955 2N3792 2N3792 TIP2955 BSS44 BSS44 BDW52C BDW51C 2N3055 BDW51C BDW51C BDW51C BDW51C 2N5338 2N5338 2N5338 -
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BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235
Abstract: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055/D 2N3055, MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ON Semiconductor
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2n3055h mj2955 safe operating area Mj2955 power transistor OF transistor 2n3055 to-3 package MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier
Abstract: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 us, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES Motorola
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2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 TO-3 2n3055 datasheet 2N3055* motorola motorola power transistor 2N3055 equivalent transistor 2n3055
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