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Part Manufacturer Description Datasheet BUY
CP2725AC48TEZ-FB GE Critical Power CP2725AC48TEZ-FB Compact Power Line High Efficiency Rectifier, Input: 100-120/220-240 Vac; Default output: 48Vdc; 5 Vdc @ 4W visit GE Critical Power
CP2000AC48TEZ-FB GE Critical Power CP2000AC48TEZ-FB Compact Power Line High Efficiency Rectifier, Input: 100-120/220-240 Vac; Output: 2250W @ 52Vdc; 5 Vdc @ 4W visit GE Critical Power
LMD18200T/LF14 Texas Instruments 3A, 55V H-Bridge 11-TO-220 visit Texas Instruments
TPIC5201KC Texas Instruments Dual Power DMOS Array 7-TO-220 visit Texas Instruments
LM675T/LF05 Texas Instruments Power Operational Amplifier 5-TO-220 visit Texas Instruments
LM675T/LF02 Texas Instruments Power Operational Amplifier 5-TO-220 visit Texas Instruments

st 220 f1

Catalog Datasheet MFG & Type PDF Document Tags

BT 1610

Abstract: st 220 f1 opening: 220 µm recommended 1360 µm Figure 19. Marking Dot, ST logo ECOPACK grade xx = marking z , . Symbol f1 Electrical characteristics and RF performance (Tamb = 25° C) Value Parameter Test condition , In f1: WLAN, BT, LTE BAND VII In f2: GPS P2-P3 In f2: GLONASS P1-P3 In f2 In f1 In f1 In f2 In f1 and , P2-P3 - S13 and S23 forward transmission Figure 3. P1-P3 - S13 insertion loss in f1 band 0 -5 , m6 Figure 7. -15 P2-P3 - S23 attenuation in f1 band S13 (dB) S23 (dB) m8 m8 m9 F =
STMicroelectronics
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BT 1610

Abstract: Copper pad diameter: 220 µm recommended 260 µm maximum Dot, ST logo ECOPACK grade xx = marking , performance (Tamb = 25° C) Value Symbol Parameter Test condition Unit Min f1 WLAN, BT , '" 1577.42 MHz GLONASS: 1597.55 â'" 1605.89 MHz P1-P3 f2 Pass band range In f1: WLAN, BT, LTE , P1-P3 In f2 20 P2-P3 In f1 18 P1 In f1 -10 Return loss P2 In f2 -20 In f1 and f2 -9.5 Attenuation P3 2/9 Doc ID 022548 Rev 1 dB DIP1524-01D3 1.1
STMicroelectronics
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BT 1610 JESD22-A114-B JESD22-A115-A

P6NM60N

Abstract: STB6NM60N STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmeshTM II Power MOSFET TO-220, TO-220FP, IPAK, DPAK , < 0.92 650 V < 0.92 4.6 A 2 4.6 A (1) STP6NM60N 3 3 1 1 TO-220 2 , D6NM60N DPAK Tape and reel STF6NM60N F6NM60N TO-220FP Tube STP6NM60N P6NM60N TO-220 , Symbol Parameter Unit TO-220, D²PAK, DPAK, IPAK TO-220FP VDS Drain-source voltage (VGS , , VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter TO-220 IPAK DPAK
STMicroelectronics
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STB6NM60N STD6NM60N STD6NM60N-1 6NM60N B6NM60N

D3NK100Z

Abstract: P3NK100Z STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAK , 2.5A 90W 3 1 3 2 1 TO-220 2 TO-220FP Extremely high dv/dt capability , of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance , application. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device , STP3NK100Z P3NK100Z TO-220 Tube STD3NK100Z D3NK100Z DPAK Tape & reel October 2007
STMicroelectronics
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F3NK100Z D3NK JESD97

p12nm50

Abstract: STB12NM50FD STB12NM50FD - STB12NM50FD-1 STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32 - 12A - TO-220/FP , STP12NM50FDFP 3 2 TO-220 160W STP12NM50FD 3 1 160W Low gate input resistance , STP12NM50FD P12NM50FD TO-220 Tube STP12NM50FDFP P12NM50FDFP TO-220FP Tube STW14NM50FD , Symbol Parameter Unit TO-220/ TO-220FP D²/I²PAK VDS VDGR VGS TO-247 Drain-source , resistance Value Symbol Parameter TO-220 I²PAK Rthj-case Thermal resistance junction-case Max
STMicroelectronics
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p12nm50 B12NM50FD W14NM50FD STB12NM50FD/-1

p11nm60fp

Abstract: p11nm60 STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP , input capacitance and gate charge TO-220 TO-220FP High dv/dt and avalanche capabilities , -1 B11NM60-1 I²PAK Tube STP11NM60 P11NM60 TO-220 Tube STP11NM60FP P11NM60FP TO , Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220/D²PAK/I²PAK TO , . Table 2. Thermal data Value Symbol Parameter Unit TO-220/D²PAK/I²PAK Rthj-case TO
STMicroelectronics
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STB11NM60T4 b11nm60 p11nm60 data sheet B11NM60

P3NK100Z

Abstract: F3NK100Z STF3NK100Z STP3NK100Z N-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP Zener-protected , good manufacturing repeatability 3 1 TO-220 3 2 1 2 TO-220FP Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based , a very good dv/dt capability for the most demanding application. Such series complements ST full , -220FP Tube STP3NK100Z P3NK100Z TO-220 Tube May 2007 Rev 1 1/14 www.st.com 14
STMicroelectronics
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st 220 f1

p11nm60fp

Abstract: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4â"¦ - 11A TO-220/FP , tested I Low input capacitance and gate charge I TO-220 TO-220FP High dv/dt and , TO-220 Tube STP11NM60FP P11NM60FP TO-220FP Tube January 2007 Rev 6 1/16 , Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220/D²PAK/I²PAK TO , , Tj ≤ TJMAX. Table 2. Thermal data Value Symbol Parameter Unit TO-220/D²PAK/I²PAK
STMicroelectronics
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STP11NM60-STP11NM60FP-STB11NM60-STB
Abstract: STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4â"¦ - 2.5A - TO-220 - TO-220FP - DPAK , < 6â"¦ 2.5A 90W 1 2 3 3 1 TO-220 2 TO-220FP I Extremely high dv/dt , capability for the most demanding application. Such series complements ST full range of high voltage Power , F3NK100Z TO-220FP Tube STP3NK100Z P3NK100Z TO-220 Tube STD3NK100Z D3NK100Z DPAK , 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220/DPAK TO-220FP VDS STMicroelectronics
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N67 ferrite

Abstract: ITACOIL 0.22 µF 630V T1 R14 100 C5 10 nF R11 1M R50 - 22 k D2 1N5248B R1 1 M F1 , Description Supplier F1 Fuse 4 A Fuse T4A - time delay Wichmann P1 W06 600 V-1 A Single phase bridge rectifier Chenyi electronics C1 220 NF-630 V B32653-A6224-K - film , n-channel md-mesh Power MOSFET STMicroelectronics HS1 FK218 32 Q1 heat sink for TO-220 - 21 °C/W , contact J2 MKDS 1,5/ PCB Term. block, screw conn., pitch 5 mm - 3 W. Phoenix contact F1
STMicroelectronics
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EVL6562A-TM-80W L6562A N67 ferrite ITACOIL E2543 E25x13x7 ITACOIL E2543/E L6562 STTH1L06 1N4148

B11NK50Z

Abstract: p11nk50zfp STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4 -11A TO-220/FP/D2PAK , TO-220 TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested 1 3 Low input , Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube July 2006 Rev 3 1/16 , Parameter TO-220/D²PAK/I²PAK TO-220FP Gate- source voltage Drain current (continuous) at TC = 25°C Drain , Rthj-a Tl Thermal data Value Parameter TO-220/D²PAK/I²PAK Thermal resistance junction-case Max
STMicroelectronics
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B11NK50Z p11nk50zfp P11NK50 P11NK p11nk50z STB11NK50ZT4 STB11NK50Z-1 STP11NK50Z STP11NK50ZFP P11NK50Z

p11nk60zfp

Abstract: P11NK60Z STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ tjmax-0.4 -11A TO-220/FP/D2PAK , TO-220 TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested 1 3 Low input , Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube August 2006 Rev 4 1/16 , Parameter TO-220/D²PAK/I²PAK TO-220FP Gate- source voltage Drain current (continuous) at TC = 25°C Drain , Rthj-a Tl Thermal data Value Parameter TO-220/D²PAK/I²PAK Thermal resistance junction-case Max
STMicroelectronics
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STB11NK60ZT4 STB11NK60Z-1 STP11NK60Z STP11NK60ZFP B11NK60Z P11NK60Z p11nk60zfp p11nk60 stp11nk60

p11nk60zfp

Abstract: P11NK60Z STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK , TO-220 1 2 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested , P11NK60Z P11NK60ZFP Package D²PAK I²PAK TO-220 TO-220FP Packaging Tape & reel Tube Tube Tube December , ) VISO TJ Tstg Absolute maximum ratings Value Parameter TO-220/D²PAK/I²PAK TO-220FP Gate- source , V(BR)DSS, Tj TJMAX. Table 2. Symbol Rthj-case Rthj-a Tl Thermal data Value Parameter TO-220
STMicroelectronics
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STB11NK60

E25x13x7

Abstract: nF R11 1M â"¦ R50 - 22 kâ"¦ D2 1N5248B R1 1 Mâ"¦ F1 4A/250V D8 1N4148 R6 47 , â"¦ 0.25W R13 15 kâ"¦ bs O ct Supplier F1 Fuse 4 A Fuse T4A - time delay P1 W06 600 V-1 A Single phase bridge rectifier C1 220 NF-630 V B32653-A6224-K - film , STMicroelectronics HS1 FK218 32 Q1 heat sink for TO-220 - 21 °C/W Fischer elektronik J1 MKDS 1,5/ PCB term. block, screw conn., pitch 5 mm - 3 W. Phoenix contact J2 MKDS 1,5/ F1 Fuse 4
STMicroelectronics
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STPS30H100CT

Abstract: X3L3 impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) IM(A) 240 1.0 220 200 0.8 , requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of , : www.st.com. ECOPACK® is an ST trademark. Table 5. TO-247 dimensions Dimensions Ref. Millimeters Inches Min. 4.85 5.15 0.191 0.203 2.20 2.60 0.086 0.102 E 0.40 0.80 , F1 0.118 typ. F2 A H 3.00 typ. 2.00 typ. 0.078 typ. F3 2.40 0.078
STMicroelectronics
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STPS30H100C STPS30H100CT STPS30H100CW X3L3 TO200AB STPS30H100CR

W9NK90Z equivalent

Abstract: P9NK90 STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1 - 8A - TO-220 /FP- D2PAK - TO , 160 W 160 W TO-220 1 D²PAK Extremely high dv/dt capability 100% avalanche tested 1 3 2 , an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to , P9NK90Z W9NK90Z Package D²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube March 2007 , Electrical ratings Table 1. Symbol Absolute maximum ratings Value Parameter TO-220/D²PAK/ TO-247 900
STMicroelectronics
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W9NK90Z equivalent P9NK90 mosfet 8A 900V TO-220 B9NK90Z F9NK90Z

STW13N95K3

Abstract: STFI13N95K3 SuperMESH3TM Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247 Datasheet - production data Features , 1. Internal schematic diagram D(2 or TAB) TO-220 TO-247 Applications Switching , Marking Package TO-220FP I2PAKFP 13N95K3 Tube TO-220 TO-247 Packaging Order codes STF13N95K3 , . Absolute maximum ratings Value Symbol Parameter TO-220 TO-247 VDS VGS ID ID IDM (2) PTOT IAR Drain source , (BR)DSS. Table 3. Thermal data Value Symbol Parameter TO-220 TO-247 TO-220FP I2PAKFP
STMicroelectronics
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STFI13N95K3 STW13N95K3 STP13N95K3 AM01476 ID15685

F7NM80

Abstract: D7NM8 STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK , TO-220 100% avalanche tested 3 3 1 3 3 2 1 Low gate input resistance , IPAK Tube STF7NM80 F7NM80 TO-220FP Tube STP7NM80 P7NM80 TO-220 Tube , Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, IPAK DPAK , TO-220 1.38 62.5 TO-220FP Unit 5 100 °C/W 62.5 °C/W 300 °C Max value
STMicroelectronics
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D7NM80 D7NM8 TO-251 footprint

D5NM6

Abstract: p8nm60fp STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 , 8 A MDmeshTM Power MOSFET TO-220, TO , Low input capacitance and gate charge Low gate input resistance 1 TO-220 Application , STB8NM60T4 B8NM60 D²PAK Tape & reel STP8NM60 P8NM60 TO-220 Tube STP8NM60FP , Symbol Parameter TO-220 D²PAK VGS Gate-source voltage IPAK TO-220FP Unit DPAK , Unit Thermal resistance junction-case max IPAK D²PAK Rthj-case TO-220 DPAK 1.25
STMicroelectronics
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STD5NM60-1 STD5NM60T4 D5NM6 p8nm60fp d5nm d5nm60 D5NM60 P8NM60FP

f3nk80z

Abstract: p3nk80z STP3NK80Z, STF3NK80Z STD3NK80Z, STD3NK80Z-1 N-channel 800 V - 3.8 2.5 A, TO-220, TO-220FP, DPAK , A STD3NK80Z-1 VDSS (@Tjmax) 800 V < 4.5 2.5 A 3 1 TO-220 Extremely high , through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to , for the most demanding applications. Such series complements ST full range of high voltage MOSFETs , summary Order codes Marking Package Packaging STP3NK80Z P3NK80Z TO-220 Tube
STMicroelectronics
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STD3NK80ZT4 D3NK80Z f3nk80z D3NK8 f3nk80 f3nk80z DATA p3nk80 F3NK80Z
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