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st 220 f1

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Abstract: opening: 220 um recommended 1360 um Figure 19. Marking Dot, ST logo ECOPACK grade xx = marking z , . Symbol f1 Electrical characteristics and RF performance (Tamb = 25° C) Value Parameter Test condition , In f1: WLAN, BT, LTE BAND VII In f2: GPS P2-P3 In f2: GLONASS P1-P3 In f2 In f1 In f1 In f2 In f1 and , P2-P3 - S13 and S23 forward transmission Figure 3. P1-P3 - S13 insertion loss in f1 band 0 -5 , m6 Figure 7. -15 P2-P3 - S23 attenuation in f1 band S13 (dB) S23 (dB) m8 m8 m9 F = ... STMicroelectronics
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9 pages,
167.86 Kb

Tablet PC schematic ST marking s11 GLONASS chip st 220 f1 BT 1610 DIP1524-01D3 TEXT
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Abstract: Copper pad diameter: 220 Âum recommended 260 Âum maximum Dot, ST logo ECOPACK grade xx = marking , performance (Tamb = 25° C) Value Symbol Parameter Test condition Unit Min f1 WLAN, BT , €“ 1577.42 MHz GLONASS: 1597.55 – 1605.89 MHz P1-P3 f2 Pass band range In f1: WLAN, BT, LTE , P1-P3 In f2 20 P2-P3 In f1 18 P1 In f1 -10 Return loss P2 In f2 -20 In f1 and f2 -9.5 Attenuation P3 2/9 Doc ID 022548 Rev 1 dB DIP1524-01D3 DIP1524-01D3 1.1 ... STMicroelectronics
Original
datasheet

9 pages,
166.54 Kb

BT 1610 DIP1524-01D3 TEXT
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Abstract: STx6NM60N N-channel 600 V, 0.85 , 4.6 A MDmeshTM II Power MOSFET TO-220, TO-220FP, IPAK, DPAK , < 0.92 650 V < 0.92 4.6 A 2 4.6 A (1) STP6NM60N STP6NM60N 3 3 1 1 TO-220 2 , D6NM60N D6NM60N DPAK Tape and reel STF6NM60N STF6NM60N F6NM60N F6NM60N TO-220FP Tube STP6NM60N STP6NM60N P6NM60N P6NM60N TO-220 , Symbol Parameter Unit TO-220, D²PAK, DPAK, IPAK TO-220FP VDS Drain-source voltage (VGS , , VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter TO-220 IPAK DPAK ... STMicroelectronics
Original
datasheet

19 pages,
667.11 Kb

STP6NM60N STF6NM60N STD6NM60N-1 STD6NM60N STB6NM60N P6NM60N TEXT
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Abstract: STF3NK100Z STF3NK100Z - STD3NK100Z STD3NK100Z STP3NK100Z STP3NK100Z N-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAK , 2.5A 90W 3 1 3 2 1 TO-220 2 TO-220FP Extremely high dv/dt capability , of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance , application. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device , STP3NK100Z STP3NK100Z P3NK100Z P3NK100Z TO-220 Tube STD3NK100Z STD3NK100Z D3NK100Z D3NK100Z DPAK Tape & reel October 2007 ... STMicroelectronics
Original
datasheet

16 pages,
399.14 Kb

STP3NK100Z STF3NK100Z STD3NK100Z JESD97 F3NK100Z D3NK P3NK100Z D3NK100Z TEXT
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Abstract: STB12NM50FD STB12NM50FD - STB12NM50FD-1 STB12NM50FD-1 STP12NM50FD/FP STP12NM50FD/FP - STW14NM50FD STW14NM50FD N-channel 500V - 0.32 - 12A - TO-220/FP , STP12NM50FDFP STP12NM50FDFP 3 2 TO-220 160W STP12NM50FD STP12NM50FD 3 1 160W Low gate input resistance , STP12NM50FD STP12NM50FD P12NM50FD P12NM50FD TO-220 Tube STP12NM50FDFP STP12NM50FDFP P12NM50FDFP P12NM50FDFP TO-220FP Tube STW14NM50FD STW14NM50FD , Symbol Parameter Unit TO-220/ TO-220FP D²/I²PAK VDS VDGR VGS TO-247 Drain-source , resistance Value Symbol Parameter TO-220 I²PAK Rthj-case Thermal resistance junction-case Max ... STMicroelectronics
Original
datasheet

18 pages,
440.05 Kb

STW14NM50FD STP12NM50FDFP STP12NM50FD STB12NM50FD-1 STB12NM50FD p12nm50 STP12NM50FD/FP TEXT
datasheet frame
Abstract: STP11NM60 STP11NM60 - STP11NM60FP STP11NM60FP STB11NM60 STB11NM60 - STB11NM60-1 STB11NM60-1 N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP , input capacitance and gate charge TO-220 TO-220FP High dv/dt and avalanche capabilities , -1 B11NM60-1 B11NM60-1 I²PAK Tube STP11NM60 STP11NM60 P11NM60 P11NM60 TO-220 Tube STP11NM60FP STP11NM60FP P11NM60FP P11NM60FP TO , Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220/D²PAK/I²PAK TO , . Table 2. Thermal data Value Symbol Parameter Unit TO-220/D²PAK/I²PAK Rthj-case TO ... STMicroelectronics
Original
datasheet

16 pages,
342.32 Kb

STP11NM60FP STB11NM60 STB11NM60-1 STB11NM60T4 STP11NM60 p11nm60 data sheet B11NM60-1 b11nm60 p11nm60 p11nm60fp TEXT
datasheet frame
Abstract: STF3NK100Z STF3NK100Z STP3NK100Z STP3NK100Z N-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP Zener-protected , good manufacturing repeatability 3 1 TO-220 3 2 1 2 TO-220FP Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based , a very good dv/dt capability for the most demanding application. Such series complements ST full , -220FP -220FP Tube STP3NK100Z STP3NK100Z P3NK100Z P3NK100Z TO-220 Tube May 2007 Rev 1 1/14 www.st.com 14 ... STMicroelectronics
Original
datasheet

14 pages,
330.88 Kb

STP3NK100Z STF3NK100Z st 220 f1 JESD97 F3NK100Z P3NK100Z TEXT
datasheet frame
Abstract: STP11NM60 STP11NM60 - STP11NM60FP STP11NM60FP STB11NM60 STB11NM60 - STB11NM60-1 STB11NM60-1 N-channel 650V @ TJmax - 0.4Ω - 11A TO-220/FP , tested I Low input capacitance and gate charge I TO-220 TO-220FP High dv/dt and , TO-220 Tube STP11NM60FP STP11NM60FP P11NM60FP P11NM60FP TO-220FP Tube January 2007 Rev 6 1/16 , Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220/D²PAK/I²PAK TO , , Tj ≤ TJMAX. Table 2. Thermal data Value Symbol Parameter Unit TO-220/D²PAK/I²PAK ... STMicroelectronics
Original
datasheet

16 pages,
342.59 Kb

STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 TEXT
datasheet frame
Abstract: STF3NK100Z STF3NK100Z - STD3NK100Z STD3NK100Z STP3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK , < 6Ω 2.5A 90W 1 2 3 3 1 TO-220 2 TO-220FP I Extremely high dv/dt , capability for the most demanding application. Such series complements ST full range of high voltage Power , F3NK100Z F3NK100Z TO-220FP Tube STP3NK100Z STP3NK100Z P3NK100Z P3NK100Z TO-220 Tube STD3NK100Z STD3NK100Z D3NK100Z D3NK100Z DPAK , 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220/DPAK TO-220FP VDS ... STMicroelectronics
Original
datasheet

16 pages,
388.27 Kb

STF3NK100Z STD3NK100Z STP3NK100Z TEXT
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Abstract: 0.22 uF 630V T1 R14 100 C5 10 nF R11 1M R50 - 22 k D2 1N5248B 1N5248B R1 1 M F1 , Description Supplier F1 Fuse 4 A Fuse T4A - time delay Wichmann P1 W06 600 V-1 A Single phase bridge rectifier Chenyi electronics C1 220 NF-630 NF-630 V B32653-A6224-K B32653-A6224-K - film , n-channel md-mesh Power MOSFET STMicroelectronics HS1 FK218 FK218 32 Q1 heat sink for TO-220 - 21 °C/W , contact J2 MKDS 1,5/ PCB Term. block, screw conn., pitch 5 mm - 3 W. Phoenix contact F1 ... STMicroelectronics
Original
datasheet

6 pages,
110.41 Kb

DATASHEET MBB0207 R13B B57237S0259M000 s237 2.5 m L6562A AN EVL6562A-TM-80W l6562 daewoo capacitor 400V ferrite n67 ballast 80W MBB0207 T4A 250V fuse T4A FUSE T4A 250v ITACOIL E2543/E L6562A E25x13x7 E2543 ITACOIL N67 ferrite TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
ST | N-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFET STP6NB90FP STP6NB90FP STP6NB90 STP6NB90 N-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP 3.85 0.147 0.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F 2 G1 TO-220 MECHANICAL DATA P011C P011C STP6NB90 STP6NB90 STP6NB90FP STP6NB90FP N - CHANNEL 900V - 1.7 W - 5.8A - TO-220/TO-220FP PowerMESH ] MOSFET n TYPICAL R DS 1999 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6444-v2.htm
STMicroelectronics 14/06/1999 8.35 Kb HTM 6444-v2.htm
ST | N-CHANNEL 1000V - 4 OHM - 3.8A - TO-220/TO-220FP POWERMESH MOSFET STP4NB100 STP4NB100 STP4NB100FP STP4NB100FP N-CHANNEL 1000V - 4 OHM - 3.8A - TO-220/TO-220FP POWERMESH MOSFET Document 0.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C STP4NB100/FP STP4NB100/FP 4/6 N - CHANNEL 1000V - 4 W - 3.8A - TO-220/TO-220FP PowerMESH ] MOSFET PRELIMINARY DATA n TYPICAL R FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT [ INTERNAL SCHEMATIC DIAGRAM June 1998 TO-220
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5964-v1.htm
STMicroelectronics 02/04/1999 7.51 Kb HTM 5964-v1.htm
ST | N-CHANNEL 500V 0.3OHM 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET Datasheet N-CHANNEL 500V 0.3OHM 12A TO-220 C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C STP12NM50/FP/STB12NM50-1 STP12NM50/FP/STB12NM50-1 8 change without notice. STP12NM50 STP12NM50 - STP12NM50FP STP12NM50FP STB12NM50-1 STB12NM50-1 N-CHANNEL 500V - 0.3 W - 12A TO-220/TO-220FP temperature allowed TO-220 1 2 3 TO-220FP 1 2 3 I PAK (Tabless TO-220) I NTERNAL SCHEMATIC DIAGRAM STP12NM50 STP12NM50
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7124.htm
STMicroelectronics 20/10/2000 11.5 Kb HTM 7124.htm
0.137 0.154 DIA. 3.75 3.85 0.147 0.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 ST | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TO-220 ISOWATT220 ISOWATT220 June 1993 TYPE V DSS R DS(on) I D STP6N25 STP6N25 STP6N25FI STP6N25FI 250 V 250 V < 1 W < 1 W 6 A 4 A 2 3 1/10 THERMAL DATA TO-220 ISOWATT220 ISOWATT220 R thj-case Thermal Resistance Junction-case Max 1.79 3.57 o 10 V (see test circuit, figure 5) 220 A/ m s Q g Q gs Q gd Total Gate Charge Gate-Source Charge
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3162-v1.htm
STMicroelectronics 02/04/1999 8.15 Kb HTM 3162-v1.htm
ST | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET latest development of ST unique "Single Feature Size" process whereby a single body is implanted on C 39 20 A I DM ( w ) Drain Current (pulsed) 220 220 A P tot Total Dissipation at T c = 25 o C 130 STP55NE06L STP55NE06L STP55NE06LFP STP55NE06LFP 60 V 60 V < 0.022 W < 0.022 W 55 A 28 A December 1997 TO-220 TO220FP 1 2 3 1 2 3 1/6 THERMAL DATA TO-220 TO-220FP R thj-case Thermal Resistance Junction-case
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5565-v1.htm
STMicroelectronics 02/04/1999 7.62 Kb HTM 5565-v1.htm
3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 ST | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS < 0.04 W 36 A 21 A 1 2 3 TO-220 ISOWATT220 ISOWATT220 December 1996 ABSOLUTE MAXIMUM RATINGS DATA TO-220 ISOWATT220 ISOWATT220 R thj-case Thermal Resistance Junction-case Max 1.25 3.75 o DD = 40 V I D = 36 A R G = 50 W V GS = 10 V (see test circuit, figure 5) 110 105 220 160 150
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3142-v2.htm
STMicroelectronics 14/06/1999 8.55 Kb HTM 3142-v2.htm
ST | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET latest development of ST unique "Single Feature Size" strip-based process. The resulting 30 A I D Drain Current (continuous) at T c = 100 o C 39 21 A I DM ( w ) Drain Current (pulsed) 220 220 A P tot Total Dissipation at T c = 25 o C 130 35 W Derating Factor 0.96 0.27 W/ o C V ISO 55 A 30 A January 1998 TO-220 TO-220FP 1 2 3 1 2 3 1/9 THERMAL DATA TO-220
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5406-v2.htm
STMicroelectronics 14/06/1999 8.26 Kb HTM 5406-v2.htm
ST | N-CHANNEL 500V 0.3OHM 12A TO-220 L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C STP12NM50/FP/STB12NM50-1 STP12NM50/FP/STB12NM50-1 8 TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET STP12NM50 STP12NM50 STP12NM50FP STP12NM50FP STB12NM50-1 STB12NM50-1 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET n TYPICAL R DS (on) = 0.3 W n HIGH dv/dt AND allowed TO-220 1 2 3 TO-220FP 1 2 3 I PAK (Tabless TO-220) I NTERNAL SCHEMATIC DIAGRAM
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7124-v1.htm
STMicroelectronics 25/05/2000 10.95 Kb HTM 7124-v1.htm
D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C STP50N06L/FI STP50N06L/FI 8/10 DIM. mm inch ST | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS DS(on) I D STP50N06L STP50N06L STP50N06LFI STP50N06LFI 60 V 60 V < 0.028 W < 0.028 W 50 A 27 A 1 2 3 TO-220 ISOWATT220 ISOWATT220 July operating area 1 2 3 1/10 THERMAL DATA TO-220 ISOWATT220 ISOWATT220 R thj-case Thermal Resistance Junction-case Max 1 Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz V GS = 0 2000 660 160 2600 900 220 pF pF pF
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3058-v2.htm
STMicroelectronics 14/06/1999 8.26 Kb HTM 3058-v2.htm
DIA. 3.75 3.85 0.147 0.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA ST | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS DSS R DS(on) I D STP3NA50 STP3NA50 STP3NA50FI STP3NA50FI 500 V 500 V < 3 W < 3 W 3.3 A 2.3 A 1 2 3 TO-220 /10 THERMAL DATA TO-220 ISOWATT220 ISOWATT220 R thj-case Thermal Resistance Junction-case operating area Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220 ISOWATT220 STP3NA50/FI STP3NA50/FI 3/10 Thermal
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3558-v2.htm
STMicroelectronics 14/06/1999 8.84 Kb HTM 3558-v2.htm