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Abstract: µF 630V T1 R14 100 C5 10 nF R11 1M R50 - 22 k D2 1N5248B 1N5248B R1 1 M F1 4A , Description Supplier F1 Fuse 4 A Fuse T4A - time delay Wichmann P1 W06 600 V-1 A Single phase bridge rectifier Chenyi electronics C1 220 NF-630 NF-630 V B32653-A6224-K B32653-A6224-K - film , STMicroelectronics HS1 FK218 FK218 32 Q1 heat sink for TO-220 - 21 °C/W Fischer elektronik J1 MKDS 1,5 , block, screw conn., pitch 5 mm - 3 W. Phoenix contact F1 Fuse 4 A Fuse T4A - time delay ... Original
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6 pages,
110.41 Kb

Epcos n67 material 47 UF 450V DATASHEET MBB0207 R13B SFR25 BC components 2200 uF 400V L6562A AN ballast 80W l6562 ferrite n67 MBB0207 FUSE T4A 250v T4A 250V EVL6562A-TM-80W EVL6562A-TM-80W abstract
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Abstract: minimum Solder stencil opening: 220 µm recommended 1360 µm Figure 19. Marking Dot, ST logo , Symbol f1 Electrical characteristics and RF performance (Tamb = 25° C) Value Parameter Test condition , In f1: WLAN, BT, LTE BAND VII In f2: GPS P2-P3 In f2: GLONASS P1-P3 In f2 In f1 In f1 In f2 In f1 and , in f1 band 0 -5 -10 -15 -20 -25 -30 -35 S13, S23 (dB) -0.70 S13 (dB) m1 F = 2.400 GHz S13 , S13 = -27.723 dB m6 Figure 7. -15 P2-P3 - S23 attenuation in f1 band S13 (dB) S23 (dB ... Original
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9 pages,
167.86 Kb

ST marking s11 GLONASS chip BT 1610 DIP1524-01D3 DIP1524-01D3 abstract
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Abstract: 3 2 1 3 2 Very high switching speed TAB TO-220 TO-220FP TAB Applications , BULB742C BULB742C Packages TO-220 TO-220FP I²PAK D²PAK Tape and reel Tube Packaging Order codes BUL742C BUL742C BUL742CFP BUL742CFP , junction temperature 150 70 -65 to 150 1500 TO-220 / D²PAK / I²PAK 1050 400 V(BR)EBO 4 8 2 4 30 TO-220FP , resistance junction - case Thermal resistance junction - ambient TO-220/D²PAK/I²PAK 1.79 62.5 TO-220FP 4.17 , 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220/I²PAK/D²PAK ... Original
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14 pages,
493.03 Kb

BULB742CT4 BUL742C BULB742C BUL742C abstract
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Abstract: forward single transistor low power converters TO-220 TO-220FP Description These devices are , L128D L128D L128DFP L128DFP Packages TO-220 TO-220FP Packaging Tube Tube June 2011 Doc ID 018977 Rev 1 1/12 , ICM IB IBM VISOL PTOT Tstg TJ Absolute maximum ratings Value Parameter TO-220 Collector-emitter , A A A V W °C °C Unit Table 3. Symbol Thermal data Value Parameter TO-220 TO-220FP 4.17 62.5 , mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these ... Original
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12 pages,
609.45 Kb

STL128D L128D STL128D abstract
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Abstract: STF3NK100Z STF3NK100Z STP3NK100Z STP3NK100Z N-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP Zener-protected , good manufacturing repeatability 3 1 TO-220 3 2 1 2 TO-220FP Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based , a very good dv/dt capability for the most demanding application. Such series complements ST full , TO-220FP Tube STP3NK100Z STP3NK100Z P3NK100Z P3NK100Z TO-220 Tube May 2007 Rev 1 1/14 www.st.com 14 ... Original
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14 pages,
330.88 Kb

STP3NK100Z STF3NK100Z st 220 f1 JESD97 P3NK100Z F3NK100Z STF3NK100Z abstract
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Abstract: European Directive 1 TO-220 2 3 1 2 3 TO-220FP Applications Electronic , BUL49D BUL49D BUL49D BUL49D TO-220 Tube BUL49DFP BUL49DFP BUL49DFP BUL49DFP TO-220FP Tube May 2007 Rev 2 1 , Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP VCES , resistance junction-ambient TO-220 _max _max TO-220FP Unit 1.56 62.5 3.67 62.5 °C/W , mechanical data Package mechanical data In order to meet environmental requirements, ST offers these ... Original
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11 pages,
318.41 Kb

st 393 JESD97 BUL49DFP BUL49D BUL49* ST TRANSISTOR -220FP BUL49D abstract
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Abstract: Very high switching speed 3 3 Applications 1 TO-220 Electronic ballast for , BUL741 BUL741 BUL741 BUL741 TO-220 Tube BUL741FP BUL741FP BUL741FP BUL741FP TO-220FP Tube August 2009 Doc ID , 25 °C for TO-220 60 Total dissipation at Tc = 25 °C for TO-220FP 30 IC ICM IB IBM , TO-220 TO-220FP Unit 2.08 4.17 °C/W 3/12 Electrical characteristics 2 BUL741 BUL741 , requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of ... Original
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12 pages,
319.02 Kb

BUL741 BUL741FP BUL741 abstract
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Abstract: STF13NK50Z STF13NK50Z STP13NK50Z STP13NK50Z, STW13NK50Z STW13NK50Z N-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247 , , obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In , capability for the most demanding applications. Such series complements ST full range of high voltage , F13NK50Z F13NK50Z TO-220FP Tube STP13NK50Z STP13NK50Z P13NK50Z P13NK50Z TO-220 Tube STW13NK50Z STW13NK50Z W13NK50Z W13NK50Z ... Original
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15 pages,
497.78 Kb

19MAR2009 STW13NK50Z STP13NK50Z INTRINSIC SAFE CIRCUIT STMicroelectronics date code to-220 f13nk W13NK50Z STF13NK50Z p13nk50 P13NK50Z F13NK50 F13NK50Z STF13NK50Z abstract
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Abstract: STF21N90K5 STF21N90K5 STP21N90K5 STP21N90K5, STW21N90K5 STW21N90K5 N-channel 900 V, 0.25 , 17 A TO-220, TO-220FP, TO-247 , TO-220 TO-220 worldwide best RDS(on) Worldwide best FOM (figure of merit) 2 Ultra , STF21N90K5 STF21N90K5 STP21N90K5 STP21N90K5 TO-220FP 21N90K5 21N90K5 STW21N90K5 STW21N90K5 July 2010 Packaging TO-220 Tube , TO-220, TO-247 TO-220FP Gate- source voltage Drain current (continuous) at TC = 25 °C ± 30 , Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal ... Original
datasheet

15 pages,
635.05 Kb

STP21N90K5 STF21N90K5 stf21n90 21N90K5 STW21N90K5 STF21N90K5 abstract
datasheet frame
Abstract: IRF620 IRF620 IRF620FP IRF620FP N-channel 200V - 0.6 - 6A TO-220/TO-220FP PowerMESHTM II Power MOSFET General , high dv/dt capability Gate charge minimized 1 2 TO-220 The PowerMESHTMII is the , IRF620 IRF620 IRF620 IRF620 TO-220 Tube IRF620FP IRF620FP IRF620 IRF620 TO-220FP Tube August 2006 Rev 6 1 , Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220 VDS VDGR VGS ID , operating area bs O TO-220FP Unit TO-220 TO-220FP 1.79 4.17 °C/W Thermal ... Original
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14 pages,
307.67 Kb

JESD97 IRF620FP IRF620 IRF620 application IRF620 abstract
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TO247 TO247 - ASD & DISCRETES - TOURS Document Number: 5927 Date Update: 02/06/98 Pages: 1 The document is available in the following formats: Portable Document Format and Raw Text Format TO247 OUTLINE AND MECHANICAL DATA [ F2 F1 V2 L4 L2 L1 L3 D Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5927-v1.htm
STMicroelectronics 02/04/1999 1.55 Kb HTM 5927-v1.htm
1 Raw Text Format TO247 OUTLINE AND MECHANICAL DATA [ F2 F1 Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5927.htm
STMicroelectronics 20/10/2000 3.45 Kb HTM 5927.htm
OUTLINE AND MECHANICAL DATA [ F2 F1 V2 L4 L2 L1 L3 D L L5 M E H V V A Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5927-v3.htm
STMicroelectronics 25/05/2000 3.34 Kb HTM 5927-v3.htm
TO247 TO247 - ASD & DISCRETES - TOURS Document Number: 5927 Date Update: 02/06/98 Pages: 1 The document is available in the following formats: Portable Document Format and Raw Text Format TO247 OUTLINE AND MECHANICAL DATA [ F2 F1 V2 L4 L2 L1 L3 D Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5927-v2.htm
STMicroelectronics 14/06/1999 1.51 Kb HTM 5927-v2.htm
D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F 2 G1 TO-220 MECHANICAL DATA P011C P011C P011C P011C MJE13005 MJE13005 MJE13005 MJE13005 3/4 Information TRANSISTOR n ST PREFERRED SALESTYPE DESCRIPTION The MJE13005 MJE13005 MJE13005 MJE13005 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package particularly intended for switch-mode applications. INTERNAL Operating Junction Temperature 150 o C 1 2 3 TO-220 1/4 THERMAL DATA R thj-case Thermal Resistance 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4163-v1.htm
STMicroelectronics 14/06/1999 4.13 Kb HTM 4163-v1.htm
L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C P011C P011C MJE2955T MJE2955T MJE2955T MJE2955T / MJE3055T MJE3055T MJE3055T MJE3055T 3/4 Information COMPLEMENTARY SILICON POWER TRANSISTORS n ST PREFERRED SALESTYPES n COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T MJE3055T MJE3055T MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is Temperature 150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220 1/4 THERMAL DATA R 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4168-v1.htm
STMicroelectronics 02/04/1999 4.72 Kb HTM 4168-v1.htm
F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C P011C P011C BDX53F BDX53F BDX53F BDX53F / BDX54F BDX54F BDX54F BDX54F 3/4 Information furnished is SILICON POWER DARLINGTON TRANSISTORS n ST PREFERRED SALESTYPES n COMPLEMENTARY PNP - NPN DEVICES n configuration and are mounted in Jedec TO-220 plastic package. It is intented for use in power linear Junction Temperature 150 o C 1 2 3 TO-220 R 1 Typ. = 10 K W R 2 Typ. = 150 W 1/4 THERMAL DATA R thj-case 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5072-v1.htm
STMicroelectronics 02/04/1999 4.98 Kb HTM 5072-v1.htm
DIA. 3.75 3.85 0.147 0.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA COMPLEMENTARY SILICON POWER TRANSISTORS n ST PREFERRED SALESTYPES DESCRIPTION The BD243B BD243B BD243B BD243B and BD243C BD243C BD243C BD243C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic Temperature 150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220 1/4 THERMAL DATA R 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5053-v1.htm
STMicroelectronics 02/04/1999 4.84 Kb HTM 5053-v1.htm
3.75 3.85 0.147 0.151 L6 A C D E D1 F G L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C P011C P011C Document Format and Raw Text Format BU407 BU407 BU407 BU407 HIGH CURRENT NPN SILICON TRANSISTOR n ST PREFERRED is a silicon epitaxial planar NPN transistors in Jedec TO-220 plastic package. They are fast June 1997 1 2 3 TO-220 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5073-v1.htm
STMicroelectronics 02/04/1999 4.69 Kb HTM 5073-v1.htm
L7 L2 Dia. F1 L5 L4 H2 L9 F2 G1 TO-220 MECHANICAL DATA P011C P011C P011C P011C MJE2955T MJE2955T MJE2955T MJE2955T / MJE3055T MJE3055T MJE3055T MJE3055T 3/4 Information COMPLEMENTARY SILICON POWER TRANSISTORS n ST PREFERRED SALESTYPES n COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T MJE3055T MJE3055T MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is Temperature 150 o C For PNP types voltage and current values are negative. 1 2 3 TO-220 1/4 THERMAL DATA R 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4168-v2.htm
STMicroelectronics 14/06/1999 4.68 Kb HTM 4168-v2.htm