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LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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ss100 transistor

Catalog Datasheet Results Type PDF Document Tags
Abstract: 3.8 to 30 volt supply voltages (SS400/ SS400/ SS100) · Wide variety of package sizes · Sensor only and , A transistor configuration where loads are normally connected between the output and a sup ply voltage. When the transistor is ON current flow is from the load into the tran sistor. Current Sourcing (PNP) - A transistor configuration where loads are normally connected between the output and ground. When the transistor is ON current flow is from the transistor into the load. Differential (Hall effect ... OCR Scan
datasheet

1 pages,
83.07 Kb

water flow sensor sot package transistor ss100 hall magnetic field sensor hall magnetic field current sensor unipolar transistor magnetic sensor npn transistor ss100 ss100 transistor SS400/ SS100 SS400/ abstract
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Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4292, REV. - SHD426110 SHD426110 NPN POWER TRANSISTOR · Hermetic Package · Generic Part Number 2N5154 2N5154 · JANTX Screening (S-100 S-100) available, add an "S" to the end of the part number · JANS Screening (SS-100) Available, add an "SS" to the end of the part number Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ Tstg Collector-Emitter Voltage , Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PIN ASSIGNMENTS DEVICE TYPE NPN Transistor ... Original
datasheet

3 pages,
138.86 Kb

transistor ss100 npn transistor ss100 SS100 TRANSISTOR SHD426110 SHD426110 abstract
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Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4291, REV. - SHD426009 SHD426009 PNP POWER TRANSISTOR · Hermetic Package · Generic Part Number 2N5153 2N5153 · JANTX Screening (S-100 S-100) available, add an "S" to the end of the part number · JANS Screening (SS-100) Available, add an "SS" to the end of the part number Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ Tstg Collector-Emitter Voltage , .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PIN ASSIGNMENTS DEVICE TYPE PNP Transistor in a ... Original
datasheet

3 pages,
145.39 Kb

SHD426009 SHD426009 abstract
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Abstract: TOSHIBA 2SK2551 2SK2551 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSV) 2SK2551 2SK2551 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance : Rj)S (Typ.) • High Forward Transfer Admittance : |Yfs| = 50S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (VdS = 50V) • Enhancement-Mode : Vth = 1.5~3.0V (VdS = , Tch = 25°C, L = 440/aH, Rg = 25H, IAR = 50A This transistor is an electrostatic sensitive device ... OCR Scan
datasheet

5 pages,
278.45 Kb

transistor ss100 Transistor ERA - 3 SC-65 DIODE ss100 2SK2551 ss100 transistor 2SK2551 abstract
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Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE (tt-M O S V ) 2SK2991 2SK2991 2SK2991 2SK2991 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS · · · · Low Drain-Source ON Resistance : Rd s (ON) = 1-350 (Typ.) High Forward Transfer Admittance : |Yfs|=4.0S (Typ.) Low Leakage Current : Ix)SS=100/tA(Max.) (Vi , R =5A 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE This transistor is an electrostatic sensitive ... OCR Scan
datasheet

5 pages,
309.48 Kb

ss100 transistor 2SK2991 2SK2991 abstract
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Abstract: TOSHIBA 2SK2605 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2605 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RdS(ON)~ 1-9H (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = 1mA) MAXIMUM , 90V, Tch = 25°C, L = 27mH, RG = 25H, IaR = 5A This transistor is an electrostatic sensitive device. ... OCR Scan
datasheet

5 pages,
3756.09 Kb

2SK2605 ss100 transistor 2SK2605 abstract
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Abstract: TOSHIBA 2SK2604 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2604 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RdS(ON)~ 1-9H (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) • Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = 1mA , 90V, Tch = 25°C, L = 27mH, RG = 25H, Iar = 5A This transistor is an electrostatic sensitive device. ... OCR Scan
datasheet

5 pages,
296.76 Kb

SC-65 marking ss100 2SK2604 K2604 2SK2604 abstract
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Abstract: TOSHIBA 2SK2718 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2718 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm • Low Drain-Source ON Resistance : Rßg (ON) = 5.60 (Typ.) • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 720V , ) This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA2 961001EAA2 0 ... OCR Scan
datasheet

5 pages,
283.73 Kb

2SK2718 SS100 TRANSISTOR 2SK2718 abstract
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Abstract: TOSHIBA 2SK2604 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2604 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rds(0N)-1-90 (Typ.) • High Forward Transfer Admittance : |yfs| = 3.8S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) • Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10v, lj) = 1mA , 27mH, Rg = 25H, lAR = 5A This transistor is an electrostatic sensitive device. Please handle with ... OCR Scan
datasheet

5 pages,
281.79 Kb

ss100 transistor SC-65 2SK2604 2SK2604 abstract
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Abstract: TOSHIBA 2SK2605 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2605 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rds(0N)-1-90 (Typ.) • High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) • Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = 1mA , temperature. * VDD = 90V, Starting Tch = 25°C, L = 27mH, Rg = 25H, IAR = 5A This transistor is an ... OCR Scan
datasheet

5 pages,
285.59 Kb

transistor ss100 2sK2605 TRANSISTOR 2SK2605 ss100 transistor 2SK2605 abstract
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