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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

ss100 transistor

Catalog Datasheet MFG & Type PDF Document Tags

ss100 transistor

Abstract: npn transistor ss100 3.8 to 30 volt supply voltages (SS400/ SS100) · Wide variety of package sizes · Sensor only and , A transistor configuration where loads are normally connected between the output and a sup ply voltage. When the transistor is ON current flow is from the load into the tran sistor. Current Sourcing (PNP) - A transistor configuration where loads are normally connected between the output and ground. When the transistor is ON current flow is from the transistor into the load. Differential (Hall effect
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ss100 transistor npn transistor ss100 unipolar transistor magnetic sensor transistor ss100 hall magnetic field sensor hall magnetic field current sensor

ss100 transistor

Abstract: SHD426009 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4291, REV. - SHD426009 PNP POWER TRANSISTOR · Hermetic Package · Generic Part Number 2N5153 · JANTX Screening (S-100) available, add an "S" to the end of the part number · JANS Screening (SS-100) Available, add an "SS" to the end of the part number Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ Tstg Collector-Emitter Voltage , .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PIN ASSIGNMENTS DEVICE TYPE PNP Transistor in a TO
Sensitron Semiconductor
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SS100 TRANSISTOR

Abstract: npn transistor ss100 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4292, REV. - SHD426110 NPN POWER TRANSISTOR · Hermetic Package · Generic Part Number 2N5154 · JANTX Screening (S-100) available, add an "S" to the end of the part number · JANS Screening (SS-100) Available, add an "SS" to the end of the part number Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ Tstg Collector-Emitter Voltage , Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PIN ASSIGNMENTS DEVICE TYPE NPN Transistor
Sensitron Semiconductor
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ss100 transistor

Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE (tt-M O S V ) 2SK2991 2SK2991 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS · · · · Low Drain-Source ON Resistance : Rd s (ON) = 1-350 (Typ.) High Forward Transfer Admittance : |Yfs|=4.0S (Typ.) Low Leakage Current : Ix)SS=100/tA(Max.) (Vi)g , R =5A 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE This transistor is an electrostatic sensitive
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2-10S2B 2SK299

ss100 transistor

Abstract: ss100 TOSHIBA 2SK2551 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSV) 2SK2551 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS â'¢ Low Drain-Source ON Resistance : Rj)S (Typ.) â'¢ High Forward Transfer Admittance : |Yfs| = 50S (Typ.) â'¢ Low Leakage Current : Ij)SS-100/"A(Max-) (VdS = 50V) â'¢ Enhancement-Mode : Vth = 1.5 , 25V, Starting Tch = 25°C, L = 440/aH, Rg = 25H, IAR = 50A This transistor is an electrostatic
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SC-65 DIODE ss100 Transistor ERA - 3 SS-100/ 2-16C1B 961001EAA2

ss100 transistor

Abstract: 2SK2604 TOSHIBA 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS â'¢ Low Drain-Sorce ON Resistance : Rds(0N)-1-90 (Typ.) â'¢ High Forward Transfer Admittance : |yfs| = 3.8S (Typ.) â'¢ Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) â'¢ Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10v, lj) = 1mA , 27mH, Rg = 25H, lAR = 5A This transistor is an electrostatic sensitive device. Please handle with
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K2604

Abstract: marking ss100 TOSHIBA 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RdS(ON)~ 1-9H (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) â'¢ Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = , temperature. * VDD = 90V, Tch = 25°C, L = 27mH, RG = 25H, Iar = 5A This transistor is an electrostatic
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K2604 marking ss100

SS100 TRANSISTOR

Abstract: 2SK2718 TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm â'¢ Low Drain-Source ON Resistance : RÃg (ON) = 5.60 (Typ.) â'¢ High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) â'¢ Low Leakage Current : Ij)SS-100/"A(Max , ) This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA2 0
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SC-67 2-10R1B

ss100 transistor

Abstract: 2SK2605 TOSHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RdS(ON)~ 1-9H (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = 1mA , . junction temperature. * VDD = 90V, Tch = 25°C, L = 27mH, RG = 25H, IaR = 5A This transistor is an
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ss100 transistor

Abstract: 2SK2605 TOSHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS â'¢ Low Drain-Sorce ON Resistance : Rds(0N)-1-90 (Typ.) â'¢ High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) â'¢ Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) â'¢ Enhancement-Mode : Vth = 2.0-4.0V (VdS = , This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA2 0
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2sK2605 TRANSISTOR

CMC 707 7 transistor solid state

Abstract: hall sensor w50 . SS100 Series Surface Mount Digital Position Sensors , Printed circuit board, Through-hole or Surface mount 0 to over 100 kHz - 4 0 to 150°C Digital, NPN SS100/SS10 Page 10/13 Proximity to external magnet 3.8 to 30 VDC (SS100), 4.5-24 VDC (SS10) Molded plastic , technology · 3.8 to 30 volt supply voltages (SS400/ SS100) · Wide variety of package sizes · Sensor only and , u rre n t S in kin g (NPN) - A transistor configuration where loads are normally connected between
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CMC 707 7 transistor solid state hall sensor w50 YLE relay equivalent transistor bc 649 siemens ss100 HIH-3605-A 005657-17-EN

ss129

Abstract: SS100 TRANSISTOR DATASHEET SIPMOS® Small-Signal Transistor BSS 84 q VDS - 50 V - 0.13 A q ID q RDS(on) 10 q VGS(th , ) DSS = b × V(BR)DSS (25 °C) Semiconductor Group 270 SIPMOS® Small-Signal Transistor BSS 88 , ) DSS = b × V(BR)DSS (25 °C) 280 SIPMOS® Small-Signal Transistor BSS 89 q VDS 240 V 0.29 , ) DSS = b × V(BR)DSS (25 °C) 286 SIPMOS® Small-Signal Transistor BSS 92 q VDS - 240 V - , × V(BR)DSS (25 °C) 292 SIPMOS® Small-Signal Transistor BSS 98 q VDS 50 V 0.3 A q ID
Siemens
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ss129 SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR q62702-s566 SS125 ss110 to-92 Q62702-S568 E6327 Q67000-S243 E6433

isl 6251 schematic

Abstract: smd transistor A4S ) hFE = 10 Siemens Aktiengesellschaft 293 PNP Silicon Darlington Transistor BC 516 High , f (VEB, VCB) Siemens Aktiengesellschaft 321 NPN Silicon Darlington Transistor BC 517
Siemens
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isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Q62702-A772 Q62702-A731 Q62702-A773

bcm 4330

Abstract: telemecanique contactor catalogue silicon controlled rectifier (gate connected to N-layer adjacent to anode layer), transistor, or Zener
Schneider Electric
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bcm 4330 telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO