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Part : DSS100-TB Supplier : Thomas & Betts Manufacturer : Newark element14 Stock : - Best Price : $7.69 Price Each : $11.76
Part : DSS100-TB Supplier : Thomas & Betts Manufacturer : Sager Stock : - Best Price : $7.45 Price Each : $8.26
Part : MSS100-TB-13 Supplier : Lantronix Manufacturer : Symmetry Electronics Stock : - Best Price : $395.00 Price Each : $395.00
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ss100 transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 3.8 to 30 volt supply voltages (SS400/ SS100) · Wide variety of package sizes · Sensor only and , A transistor configuration where loads are normally connected between the output and a sup ply voltage. When the transistor is ON current flow is from the load into the tran sistor. Current Sourcing (PNP) - A transistor configuration where loads are normally connected between the output and ground. When the transistor is ON current flow is from the transistor into the load. Differential (Hall effect -
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npn transistor ss100 unipolar transistor magnetic sensor transistor ss100 LINEAR OUTPUT HALL EFFECT SENSORS hall magnetic field sensor
Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4291, REV. - SHD426009 PNP POWER TRANSISTOR · Hermetic Package · Generic Part Number 2N5153 · JANTX Screening (S-100) available, add an "S" to the end of the part number · JANS Screening (SS-100) Available, add an "SS" to the end of the part number Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ Tstg Collector-Emitter Voltage , .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PIN ASSIGNMENTS DEVICE TYPE PNP Transistor in a TO Sensitron Semiconductor
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Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4292, REV. - SHD426110 NPN POWER TRANSISTOR · Hermetic Package · Generic Part Number 2N5154 · JANTX Screening (S-100) available, add an "S" to the end of the part number · JANS Screening (SS-100) Available, add an "SS" to the end of the part number Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ Tstg Collector-Emitter Voltage , Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 PIN ASSIGNMENTS DEVICE TYPE NPN Transistor Sensitron Semiconductor
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Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE (tt-M O S V ) 2SK2991 2SK2991 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS · · · · Low Drain-Source ON Resistance : Rd s (ON) = 1-350 (Typ.) High Forward Transfer Admittance : |Yfs|=4.0S (Typ.) Low Leakage Current : Ix)SS=100/tA(Max.) (Vi)g , R =5A 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE This transistor is an electrostatic sensitive -
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2-10S2B 2SK299
Abstract: TOSHIBA 2SK2551 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSV) 2SK2551 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS â'¢ Low Drain-Source ON Resistance : Rj)S (Typ.) â'¢ High Forward Transfer Admittance : |Yfs| = 50S (Typ.) â'¢ Low Leakage Current : Ij)SS-100/"A(Max-) (VdS = 50V) â'¢ Enhancement-Mode : Vth = 1.5 , 25V, Starting Tch = 25°C, L = 440/aH, Rg = 25H, IAR = 50A This transistor is an electrostatic -
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SC-65 DIODE ss100 Transistor ERA - 3 SS-100/ 2-16C1B 961001EAA2
Abstract: TOSHIBA 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS â'¢ Low Drain-Sorce ON Resistance : Rds(0N)-1-90 (Typ.) â'¢ High Forward Transfer Admittance : |yfs| = 3.8S (Typ.) â'¢ Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) â'¢ Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10v, lj) = 1mA , 27mH, Rg = 25H, lAR = 5A This transistor is an electrostatic sensitive device. Please handle with -
OCR Scan
Abstract: TOSHIBA 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RdS(ON)~ 1-9H (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) â'¢ Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = , temperature. * VDD = 90V, Tch = 25°C, L = 27mH, RG = 25H, Iar = 5A This transistor is an electrostatic -
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K2604 marking ss100
Abstract: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm â'¢ Low Drain-Source ON Resistance : RÃg (ON) = 5.60 (Typ.) â'¢ High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) â'¢ Low Leakage Current : Ij)SS-100/"A(Max , ) This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA2 0 -
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SC-67 2-10R1B
Abstract: TOSHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RdS(ON)~ 1-9H (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = 1mA , . junction temperature. * VDD = 90V, Tch = 25°C, L = 27mH, RG = 25H, IaR = 5A This transistor is an -
OCR Scan
Abstract: TOSHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS â'¢ Low Drain-Sorce ON Resistance : Rds(0N)-1-90 (Typ.) â'¢ High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) â'¢ Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) â'¢ Enhancement-Mode : Vth = 2.0-4.0V (VdS = , This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA2 0 -
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2sK2605 TRANSISTOR
Abstract: . SS100 Series Surface Mount Digital Position Sensors , Printed circuit board, Through-hole or Surface mount 0 to over 100 kHz - 4 0 to 150°C Digital, NPN SS100/SS10 Page 10/13 Proximity to external magnet 3.8 to 30 VDC (SS100), 4.5-24 VDC (SS10) Molded plastic , technology · 3.8 to 30 volt supply voltages (SS400/ SS100) · Wide variety of package sizes · Sensor only and , u rre n t S in kin g (NPN) - A transistor configuration where loads are normally connected between -
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CMC 707 7 transistor solid state hall sensor w50 YLE relay equivalent transistor bc 649 HIH-3605-A siemens ss100 005657-17-EN
Abstract: SIPMOS® Small-Signal Transistor BSS 84 q VDS - 50 V - 0.13 A q ID q RDS(on) 10 q VGS(th , ) DSS = b × V(BR)DSS (25 °C) Semiconductor Group 270 SIPMOS® Small-Signal Transistor BSS 88 , ) DSS = b × V(BR)DSS (25 °C) 280 SIPMOS® Small-Signal Transistor BSS 89 q VDS 240 V 0.29 , ) DSS = b × V(BR)DSS (25 °C) 286 SIPMOS® Small-Signal Transistor BSS 92 q VDS - 240 V - , × V(BR)DSS (25 °C) 292 SIPMOS® Small-Signal Transistor BSS 98 q VDS 50 V 0.3 A q ID Siemens
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ss129 SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR q62702-s566 SS125 ss110 to-92 Q62702-S568 E6327 Q67000-S243 E6433
Abstract: ) hFE = 10 Siemens Aktiengesellschaft 293 PNP Silicon Darlington Transistor BC 516 High , f (VEB, VCB) Siemens Aktiengesellschaft 321 NPN Silicon Darlington Transistor BC 517 Siemens
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isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor Transistors Diodes smd A7H Q62702-A772 Q62702-A731 Q62702-A773
Abstract: silicon controlled rectifier (gate connected to N-layer adjacent to anode layer), transistor, or Zener Schneider Electric
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bcm 4330 telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO