NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TOSHIBA 2SK2717 2SK2717 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2717 2SK2717 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Souree ON Resistance : R]}g (ON)~ 2.30 (Typ.) • High Forward Transfer Admittance : |'Yfs| = 4.4S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 720V) • Enhancement-Mode : Vth = 2.0~4.0V(Vi)s = 10V , 43.6mH, RG = 25H, IaR = 5A This transistor is an electrostatic sensitive device. Please handle with ... | OCR Scan |
5 pages, |
transistor ss100 ss100 transistor 2SK2717 SS-100/ 2SK2717 abstract |
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| Abstract: TOSHIBA 2SK2551 2SK2551 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSV) 2SK2551 2SK2551 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance : Rj)S (Typ.) • High Forward Transfer Admittance : |Yfs| = 50S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (VdS = 50V) • Enhancement-Mode : Vth = 1.5~3.0V (VdS = , Tch = 25°C, L = 440/aH, Rg = 25H, IAR = 50A This transistor is an electrostatic sensitive device ... | OCR Scan |
5 pages, |
SC-65 2SK2551 ss100 transistor SS-100/ 2SK2551 abstract |
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| Abstract: TOSHIBA 2SK2718 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2718 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm • Low Drain-Source ON Resistance : Rßg (ON) = 5.60 (Typ.) • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 720V , ) This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA2 961001EAA2 0 ... | OCR Scan |
5 pages, |
SS100 TRANSISTOR 2SK2718 2SK2718 abstract |
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| Abstract: TOSHIBA 2SK2718 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2718 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Unit in mm • Low Drain-Source ON Resistance : Rßg (ON) = 5.60 (Typ.) • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 720V , ) This transistor is an electrostatic sensitive device. Please handle with caution. 961001EAA2 961001EAA2 0 ... | OCR Scan |
5 pages, |
ss100 transistor L5A marking 2SK2718 2SK2718 abstract |
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| Abstract: TOSHIBA 2SK2604 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2604 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RdS(ON)~ 1-9H (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) • Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = 1mA , 90V, Tch = 25°C, L = 27mH, RG = 25H, Iar = 5A This transistor is an electrostatic sensitive device. ... | OCR Scan |
5 pages, |
SC-65 2SK2604 K2604 SS-100/ 2SK2604 abstract |
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| Abstract: TOSHIBA 2SK2605 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2605 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RdS(ON)~ 1-9H (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = 1mA) MAXIMUM , 90V, Tch = 25°C, L = 27mH, RG = 25H, IaR = 5A This transistor is an electrostatic sensitive device. ... | OCR Scan |
5 pages, |
ss100 transistor 2SK2605 SS-100/ 2SK2605 abstract |
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| Abstract: TOSHIBA 2SK2604 2SK2604 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2604 2SK2604 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rds(0N)-1-90 (Typ.) • High Forward Transfer Admittance : |yfs| = 3.8S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) • Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10v, lj) = 1mA , 27mH, Rg = 25H, lAR = 5A This transistor is an electrostatic sensitive device. Please handle with ... | OCR Scan |
5 pages, |
ss100 transistor SC-65 2SK2604 SS-100/ 2SK2604 abstract |
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| Abstract: TOSHIBA 2SK2605 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSIII) 2SK2605 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rds(0N)-1-90 (Typ.) • High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) • Low Leakage Current : Ij)SS-100/"A(Max-) (Vds = 640V) • Enhancement-Mode : Vth = 2.0-4.0V (VdS = 10V, lj) = 1mA , temperature. * VDD = 90V, Starting Tch = 25°C, L = 27mH, Rg = 25H, IAR = 5A This transistor is an ... | OCR Scan |
5 pages, |
2SK2605 ss100 transistor SS-100/ 2SK2605 abstract |
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| Abstract: SIPMOS® Small-Signal Transistor BSS 84 q VDS - 50 V - 0.13 A q ID q RDS(on) 10 q VGS(th , ) DSS = b Ã- V(BR)DSS (25 °C) Semiconductor Group 270 SIPMOS® Small-Signal Transistor BSS 88 , ) DSS = b Ã- V(BR)DSS (25 °C) 280 SIPMOS® Small-Signal Transistor BSS 89 q VDS 240 V 0.29 , ) DSS = b Ã- V(BR)DSS (25 °C) 286 SIPMOS® Small-Signal Transistor BSS 92 q VDS - 240 V - , Ã- V(BR)DSS (25 °C) 292 SIPMOS® Small-Signal Transistor BSS 98 q VDS 50 V 0.3 A q ID ... | Original |
88 pages, |
Q67000-S316 s484 ss125 datasheet BSS 130 s635 SS100 SS100 TO92 SS89 Q62702-S464 ss110 to-92 ss101 Q62702-S489 marking BSs sot-23 ss89 to-92 datasheet abstract |
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| Abstract: TDA 2030 equivalent smd 5cs isl 6251 schematic ) hFE = 10 Siemens Aktiengesellschaft 293 PNP Silicon Darlington Transistor BC 516 High , f (VEB, VCB) Siemens Aktiengesellschaft 321 NPN Silicon Darlington Transistor BC 517 ... | Original |
2059 pages, |
FAH 23 s1b transistor A4s smd smd diode marking D7H TRANSISTOR SMD MARKING CODE jg super v dc servo motor 100-300 w smd transistor 5BS 3 ofw 731 Siemens diode c0510 a4s smd transistor smd transistor 6Bs smd transistor 5Bs npn transistor ss100 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| pass transistor and output, compensation, and bypass capacitors. Base drive to the external transistor is at least 10mA, permitting output currents to exceed 1A when using high-gain transistors (ß > 100). Output current limiting is implemented by limiting the external transistor's base current. Output operate with an input-to-output voltage differential limited only by an external PNP transistor. Outputs Outputs 3.3V (MAX687/MAX688 MAX687/MAX688 MAX687/MAX688 MAX687/MAX688) 3.0V (MAX689 MAX689 MAX689 MAX689) Directly Drives External PNP Transistor 10mA Min www.datasheetarchive.com/files/maxim/0010/quick292.htm |
Maxim | 04/04/2001 | 7.44 Kb | HTM | quick292.htm |
| TTL Compatible Enable I SS Technology's switching regulators, over 200 op amp models, as well as resistors, transistors and MOSFET www.datasheetarchive.com/files/linear/product/2262.html |
Linear | 17/09/2010 | 18.83 Kb | HTML | 2262.html |
| . Name Function 1 OUT1 Output of high side driver (emitter of power NPN transistor). 2 V CC Positive (collector of the NPN power transistor). 4 CLAMP_PROG First Step of the Gate Voltage Programming. The POSITIVE SUPPLY 100 m F V REF V in 1nF D94IN108B D94IN108B D94IN108B D94IN108B OUT1 OUT2 VCLAMP_ PROG MON_ DELAY V SS 100 m F NEGATIVE SUPPLY SELECT 100nF V REF 100nF DELAY 4.7K W 4.7K W V REF COM VON www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4281.htm |
STMicroelectronics | 20/10/2000 | 18.73 Kb | HTM | 4281.htm |
| SS 100 m F NEGATIVE SUPPLY SELECT 100nF V REF 100nF DELAY 4.7K W 4.7K W V . Name Function 1 OUT1 Output of high side driver (emitter of power NPN transistor). 2 V CC Bias Voltage (collector of the NPN power transistor). 4 CLAMP_PROG First Step of the Gate Voltage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4281-v3.htm |
STMicroelectronics | 25/05/2000 | 17.68 Kb | HTM | 4281-v3.htm |
| * Library of Elantec op-amps, transistor arrays * $Revision: 1.2 $ * $Author: HIRASUNA S xtb=2.0) * * Resistors * r1 1 10 5K r2 11 7 5K r3 3 4 2.0 r4 5 4 2.0 * * Transistors 6 12 101 22K r7 113 11 10 r8 11 112 10 r9 102 10 407 cs2 10 116 100pF * * Transistors ) * * Resistors * r1 20 21 58.33 r2 27 10 58.33 r3 22 11 2 r4 11 23 2 * * Transistors * j1 12 5 20 qf j * * Transistors * q1 4 30 8 qnd d1 8 4 dclamp q2 4 23 1 qpd d2 4 1 dclamp q3 7 21 22 qp q4 www.datasheetarchive.com/files/spicemodels/misc/elantec.lib |
Spice Models | 04/09/2012 | 105.72 Kb | LIB | elantec.lib |
| * Library of Elantec op-amps, transistor arrays * $Revision: 1.19 $ * $Author: RPEREZ S xtb=2.0) * * Resistors * r1 1 10 5K r2 11 7 5K r3 3 4 2.0 r4 5 4 2.0 * * Transistors 6 12 101 22K r7 113 11 10 r8 11 112 10 r9 102 10 407 cs2 10 116 100pF * * Transistors ) * * Resistors * r1 20 21 58.33 r2 27 10 58.33 r3 22 11 2 r4 11 23 2 * * Transistors * j1 12 5 20 qf j * * Transistors * q1 4 30 8 qnd d1 8 4 dclamp q2 4 23 1 qpd d2 4 1 dclamp q3 7 21 22 qp q4 www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/elantec.lib |
Spice Models | 29/07/2012 | 105.77 Kb | LIB | elantec.lib |
| 10 5K r2 11 7 5K r3 3 4 2.0 r4 5 4 2.0 * * Transistors * q1 7 8 10 qp q4 6 11 5 qp q2 1 101 22K r7 113 11 10 r8 11 112 10 r9 102 10 407 cs2 10 116 100pF * * Transistors & Diodes ) * * Resistors * r1 20 21 58.33 r2 27 10 58.33 r3 22 11 2 r4 11 23 2 * * Transistors * j1 12 5 20 qf 29 7 2K r6 2 22 2K r7 27 28 10 r8 24 26 10 * * Transistors * q1 4 30 8 qnd d1 8 4 dclamp 11 23 2 * * Transistors * j1 12 5 20 qf j4 24 10 26 qf q2 21 21 25 qn q3 24 24 www.datasheetarchive.com/files/spicemodels/misc/modelos/elantec.lib |
Spice Models | 21/02/2008 | 117.78 Kb | LIB | elantec.lib |
| 5K r2 11 7 5K r3 3 4 2.0 r4 5 4 2.0 * * Transistors * q1 7 8 10 qp q4 6 11 5 qp q2 1 407 cs2 10 116 100pF * * Transistors & Diodes * j1a 4 5 103 qfa j1b 3 6 108 qfa j2 111 11 23 2 * * Transistors * j1 12 5 20 qf j4 24 10 26 qf q2 21 21 25 qn q3 24 24 25 qp q5 1 11 23 2 * * Transistors * j1 12 5 20 qf j4 24 10 26 qf q2 21 21 25 qn q3 24 24 25 qp q5 1 F) * * Resistors * r1 21 22 30 r2 7 10 30 r3 25 11 3 r4 11 26 3 * * Transistors * j1a 20 5 21 qfb j1b www.datasheetarchive.com/files/spicemodels/misc/models/elantec.lib |
Spice Models | 01/09/2003 | 85.38 Kb | LIB | elantec.lib |
| Selection results for Discretes, 3162 results shown. "Type > > max","RDS(on)","Ptot max","PZSM","hFE min","IDDC","hFE min","Cd max.","Description","VFmax","Thermal Resista www.datasheetarchive.com/download/29573155-649157ZC/27046_e.csv |
Philips | 13/06/2005 | 2149.29 Kb | CSV | 27046_e.csv |
| .0 * * Transistors * q1 7 8 10 qp q4 6 11 5 qp q2 1 8 11 qn q3 2 10 3 qn .ends *ELH0032 ELH0032 ELH0032 ELH0032 Model F * * Transistors & Diodes * j1a 4 5 103 qfa j1b 3 6 108 qfa j2 111 10 116 qfb q1 104 4 105 qp q2 2 3 105 qp ) * * Resistors * r1 20 21 58.33 r2 27 10 58.33 r3 22 11 2 r4 11 23 2 * * Transistors * j1 12 5 20 * * Transistors * q1 4 30 8 qnd d1 8 4 dclamp q2 4 23 1 qpd d2 4 1 dclamp q3 7 21 22 qp q4 23 22 24 qn q 3 22 11 2 r4 11 23 2 * * Transistors * j1 12 5 20 qf j4 24 10 26 qf q2 21 21 25 qn q3 24 www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/elantec.lib |
Spice Models | 18/04/2010 | 131.15 Kb | LIB | elantec.lib |