NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| DS2401Z+T&R/BKN | Maxim Integrated Products | SILICON SERL NUMBER 4PIN SOT-223 | 
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| LTC6990MPS6#PBF | Linear Technology | LTC6990 - TimerBlox: Voltage Controlled Silicon Oscillator; Package: SOT; Pins: 6; Temperature: MP |
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| DS2411R+T&R/BKN | Maxim Integrated Products | Silicon Serial Number 3-Pin SOT-23 T/R |
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| TEA1111AT | NXP Semiconductors | IC TELEPHONE SPEECH CKT, PDSO16, PLASTIC, SOT-109, SO-16, Telephone Circuit |
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| TEA1062AT/C4,112 | NXP Semiconductors | IC TELEPHONE SPEECH CKT, PDSO16, PLASTIC, SOT-109, SO-16, Telephone Circuit |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MI L-S- 19500/139B 19500/139B AMENDMENT-1 16 Au.gw 1967 MILITARY SPECIFICATION TRANSISTOR, TYW Page 4, Table 1, Subgraup (MIL-STD-7512 MIL-STD-7512) "TA 6 Details = PNP, JAN-2 SILICON Nll19 Forward-Current column add Transfer the Ratio following In the `550c""" Preparing Custodian: test: condition: activity: ArmY-EL Army-EL Navy-Ships Air Force - ASD Proiect No. 5961-0083-"7 ... | Original |
1 pages, |
specification transistor 19500/139B 19500/139B abstract |
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| Abstract: specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS DESCRIPTION · Two , specification Transistor complementary pair PUMZ1 LIMITING VALUES In accordance with the Absolute , Philips Semiconductors Preliminary specification Transistor complementary pair PUMZ1 PACKAGE , specification Transistor complementary pair PUMZ1 NOTES 1995 Dec 07 5 Philips Semiconductors Preliminary specification Transistor complementary pair PUMZ1 NOTES 1995 Dec 07 6 Philips ... | Original |
8 pages, |
SC70-6 philips 23 BP317 4044 for amplification 301 marking code PNP transistor datasheet abstract |
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| Abstract: MIL-S-19500/178B MIL-S-19500/178B(NAVY) AMENDMENT 4 25 February 19 72 SUPERSEDING 1/ AMENDMENT 3 25 March 1970 MILITARY SPECIFICATION TRANSISTOR. PNP. GERMANIUM TYPE 2N1165 2N1165 This amendment forms a part of Military Specification MIL-S-19500/i78B(nAvy), 29 May 1964. Page 2 Paragraph 3.4: Delete and substitute: "Marking. Marking shall be in accordance with MIL-S-19500 MIL-S-19500, except that the country of origin may fee omitted." Page 3 Figure 1- Terminal lug width dimension (outside): Delete ".20 ± .01" and substitute ".19 ± .02". ... | OCR Scan |
1 pages, |
2N1165 MIL-S-19500 MIL-S-19500/178B MIL-S-19500/178B abstract |
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| Abstract: I MI L- S-19500/2B S-19500/2B AMENOMENT 1 23 February 1981 q MILITARY SEMICONDUCTOR OEVICE, TYPES SPECIFICATION TRANSISTOR, 2N118 2N118, 2N117 2N117, NPN, ANO SILICON, LOW POMER 2N119 2N119 This amendment forms a part of Military Specification MI L-s-19500/z B, dated 14 June 1968, and is approved for use by all Departments and Agencies of the Department of Oefense. PAGE Oelete "11 and 3.4, second line: 4.2 Delete III". and substitute: "4.2 4.3 ... | Original |
1 pages, |
2N119 2N118 2N117 S-19500/2B S-19500/2B abstract |
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| Abstract: M1'L-S-19500/289 L-S-19500/289(EL) AMENDMENT-3 18 APRIL 1966 SUPERSEDING AMENDMENT-2 11 September 1964 MILITARY SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2378 2N2378 This Amendment forme a part of Military Specification MIL-S-19500/289 MIL-S-19500/289(BL). 24 April 1964. Page 2. paragraph 3.5: Replace with the following! "3.5 Marking. - Except as otherwise specified herein, marking shall be in accordance with Specification MIL-S-19500 MIL-S-19500. If any specification-requirements waiver has been granted, the product-identification marking shall ... | OCR Scan |
1 pages, |
2N2378 L-S-19500/289 MIL-S-19500/289 MIL-S-19500 L-S-19500/289 abstract |
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| Abstract: NEC ELECTRON DEVICE PRELIMINARY SPECIFICATION TRANSISTOR ARRAY ¿¿PA82C PA82C HIGH-VOLTAGE FLUORESCENT INDICATOR PANEL DRIVER PNP-NPN SILICON EPITAXIAL TRANSISTOR ARRAY DESCRIPTION The jUPA82C is a monolithik array of eight PNP-NPN structured transistors. This device is especially suited for driving High-Voltage FIP (Fluorescent Indicator Panel) called DOT TYPE FIP. PACKAGE DIMENSIONS in millimeters I-ir-ii-ir-ir-ir-ii-ir-i 18 17 16 15 14 13 12 11 10 â-¡ 123456789 'uuuuuuuuu 22.86 MAX. FEATURES • High voltage rating ... | OCR Scan |
2 pages, |
transistor pnp-npn NEC FIP PA82C PA82C abstract |
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| Abstract: MIL-S-19500/303 MIL-S-19500/303(NAVY) AMENDMENT 3 26 February 1971_ SUPERSEDING U AMENDMENT 2 14 March 1966 MILITARY SPECIFICATION TRANSISTOR, TYPES 2N2631 2N2631 AND 2N28"6 This amendment forms a part of Military Specification MIL-S-19500/ MIL-S-19500/ 503(NAVY), 22 October 1964. Page 1 1.3, and P„ columns: Delete and substitute: Amp PC Watts 2N2631 2N2631 2N2876 2N2876 2N2631 2N2631 2] ... | OCR Scan |
1 pages, |
2N2876 2N28 2N2631 MIL-S-19500/303 MIL-S-19500/ MIL-S-19500/303 abstract |
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| Abstract: NEC ELECTRON DEVICE PRELIMINARY SPECIFICATION TRANSISTOR ARRAY /¿PA6118C PA6118C HIGH-VOLTAGE FLUORESCENT INDICATOR PANEL DRIVER SILICON EPITAXIAL TRANSISTOR ARRAY DESCRIPTION The ¿/PA6118C /PA6118C is a monolithic array of eight independent NPN darlington output stage* with a common bias supply. This device is especially suited for driving FIP (Fluorescent Indicator Panel). The output load is activated when the input is pulled high, so that it is easy to design logic circuits of a microcomputer, etc. FEATURES • ... | OCR Scan |
4 pages, |
UPA6118C PA6118C /PA6118C PA6118C abstract |
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| Abstract: 29 August 1988 MILITARY SPECIFICATION SHEET TRANSISTOR, NPN, SILICON TYPES 2N2015 2N2015, 2N2016 2N2016 Military specification MIL-S-19500/248A MIL-S-19500/248A(ER), dated 10 April 1963, with Amendment 2, dated 23 June 1982, has been reviewed , 2 23 June 1982_ SUPERSEDING AMENDMENT 1 18 April 1966 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N2015 2N2015, 2N2016 2N2016 T-his amendment forms a part of Military Specification MI L-S-l 9500/248{ EL , SuPËRâEDtNG- MIL-S-l 95OO/248 95OO/248(Si0C) 21 June 1962 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES ... | OCR Scan |
13 pages, |
2n20 2N2015 2N2016 JAN 2N2016 t056 0D01B40 MIL-S-19500/248A 0D01B40 abstract |
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| Abstract: (NAVY) 7 April 1961 MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON TYPES 2N389 2N389 AND 2N424 2N424 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for high power, silicon, NPN, transistors, and is in accordance with Specification MIL-S-19500 MIL-S-19500 except as otherwise specified herein. 1.2 Physical , of invitation for bids or request for proposal, form a part of this specification to the extent ... | OCR Scan |
6 pages, |
l73a 2N424 2N389 MIL-S-19500/173A MIL-S-I95OO/173 MIL-S-19500/173A abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| Specifications Specifications for Low Power NPN Transistors Specifications for High Power NPN Transistors www.datasheetarchive.com/files/stmicroelectronics/stonline/products/space/specs/index-v1.htm |
STMicroelectronics | 14/06/1999 | 0.93 Kb | HTM | index-v1.htm |
| Specifications Specifications for Low Power NPN Transistors Specifications for High Power NPN Transistors www.datasheetarchive.com/files/stmicroelectronics/stonline/products/space/specs/index.htm |
STMicroelectronics | 02/04/1999 | 0.93 Kb | HTM | index.htm |
| Specifications for Low Power NPN Transistors Specifications for Low Power NPN Transistors ESA/SCC Doc. or Spec. # Iss. Rev. Specification Title 5201/001 5 A Transistors Low Power NPN, based on type 2N2484 2N2484 2N2484 2N2484 5201/002 4 A Transistors Low Power NPN, based on type 2N2222A 2N2222A 2N2222A 2N2222A 5201/002 4 A Transistors Low Power NPN, based on type 2N2222A 2N2222A 2N2222A 2N2222A 5201 www.datasheetarchive.com/files/stmicroelectronics/stonline/products/space/specs/lpnpn.htm |
STMicroelectronics | 14/06/1999 | 2.31 Kb | HTM | lpnpn.htm |
| 817DPN 817DPN 817DPN 817DPN NPN/PNP general purpose transistor 22-11-2002 Product Specification 12 DPN; NPN/PNP general purpose transistor General info NPN/PNP transistor pair in a SOT457 (SC-74 SC-74 SC-74 SC-74) plastic package. Features High current (500 mA) 600 mW total power dissipation Replaces two SOT23 packaged transistors Complementary driver Half and full bridge driver. Medium Power Transistors and Rectifiers for www.datasheetarchive.com/files/philips/pip/bc817dpn_2-v1.html |
Philips | 06/06/2005 | 3.3 Kb | HTML | bc817dpn_2-v1.html |
| BC807DS BC807DS BC807DS BC807DS PNP general purpose double transistor 22-11-2002 Product Specification 8.0 58.5 Support General purpose transistors portfolio (2005-02-01) Letter Symbols ; PNP general purpose double transistor General info PNP transistor pair in a SOT457 (SC-74 SC-74 SC-74 SC-74) plastic package. Features High current (500 mA) 600 mW total power dissipation Replaces two SOT23 packaged transistors on same www.datasheetarchive.com/files/philips/pip/bc807ds_2-v1.html |
Philips | 06/06/2005 | 3 Kb | HTML | bc807ds_2-v1.html |
| BC817DS BC817DS BC817DS BC817DS NPN general purpose double transistor 22-11-2002 Product Specification 8.0 64.6 Support General purpose transistors portfolio (2005-02-01) Letter Symbols ; NPN general purpose double transistor General info NPN transistor pair in a SOT457 (SC-74 SC-74 SC-74 SC-74) plastic package. Features High current (500 mA) 600 mW total power dissipation Replaces two SOT23 packaged transistors on same www.datasheetarchive.com/files/philips/pip/bc817ds_2-v1.html |
Philips | 06/06/2005 | 3 Kb | HTML | bc817ds_2-v1.html |
| PSS9012 PSS9012 PSS9012 PSS9012 series 20 V PNP general purpose transistors 10-8-2004 Product Specification PSS9012 PSS9012 PSS9012 PSS9012 series; 20 V PNP general purpose transistors General info PNP general purpose transistor in a SOT54 (TO-92) leaded plastic package. NPN -08-01) Identification product range (2004-10-01) General purpose transistors portfolio (2005-02-01) Letter Symbols - Transistors General (1999-05-01) WWW View the PIP online www.datasheetarchive.com/files/philips/pip/pss9012_series_2.html |
Philips | 06/06/2005 | 3.54 Kb | HTML | pss9012_series_2.html |
| _1 PEMH10 PEMH10 PEMH10 PEMH10 NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN resistor-equipped transistors in a SOT666 plastic package. 300 soldering due to straight leads Replaces two SC-75/SC-89 SC-75/SC-89 SC-75/SC-89 SC-75/SC-89 packaged transistors on same PCB area Reduces . Letter Symbols - Transistors General (01-May-99) PEMH10 PEMH10 PEMH10 PEMH10 NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm 22-Oct-01 www.datasheetarchive.com/files/philips/pip/pemh10_1-v1.html |
Philips | 14/02/2002 | 5.46 Kb | HTML | pemh10_1-v1.html |
| switching transistor 27-10-2004 Product Specification 7.0 55.4 Products and ; PNP switching transistor General info PNP transistor in a plastic TO-92; SOT54 package. NPN complement: MPS3904 MPS3904 MPS3904 MPS3904 SOT54 RFS Chemical content Support Switching transistors portfolio (2005-02-01) Letter Symbols - Transistors General (1999-05-01) WWW View the PIP online www.datasheetarchive.com/files/philips/pip/mps3906_4.html |
Philips | 15/06/2005 | 3.88 Kb | HTML | mps3906_4.html |
| _1 PEMB4 PNP resistor-equipped double transistor R1 = 10 kOhm, R2 = open PNP resistor-equipped double transistor in a SOT666 plastic package transistors Reduces required board space Reduces pick and place costs . Letter Symbols - Transistors General (01-May-99) PEMB4 PNP resistor-equipped double transistor R1 = 10 kOhm, R2 = open 14-Sep-01 www.datasheetarchive.com/files/philips/pip/pemb4_1-v1.html |
Philips | 14/02/2002 | 5.48 Kb | HTML | pemb4_1-v1.html |