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Part Manufacturer Description Datasheet BUY
2N3810L Microsemi Corporation Transistor visit Digikey
2N2904AL Microsemi Corporation Transistor visit Digikey
2N3499L Microsemi Corporation Transistor visit Digikey
2N2222AUA Microsemi Corporation Transistor visit Digikey
SRF4427G Microsemi Corporation Transistor visit Digikey
2N2907AUA Microsemi Corporation Transistor visit Digikey

smd+transistors+3ks

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: sec. in still air, 1 sec. in rapidly stirred oil. Style 3KS= 19 sec. in still air, 2.2 sec. in , ° C. 3KS-Rsistance range 3.3K-12K Q .350â' long body Max. Operate Temp. 100° C. ALL STYLES WILL -
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2KS-272 MICIS001 ICIS001
Abstract: /15M/18M, LQG15H/18H and LQW18A series. Reflow soldering should be applied for LQH3ER/3KS. 240 , allowed time is the accumulated time. 240 220 LQH32M/32C LQH3ER/3KS 200 180 0 10 20 muRata
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LQH3ER flux NF-3000 H60A H63A H63A FLOW SOLDER LQH32M 21/32C LQP03T/15M/18M LQP03T/15M LQP18M MR-8153RA
Abstract: 1 Q LQH32Mxx11 LQH3ER 2.0 1.0 5.5 1.0 1.0 1.0 LQH32Mxx21/32Cxx21 LQH3KS 2.0 1.0 5.5 1.0 1.3 1.0 in mm 2 1) SolderH60A 280 260 LQH3ERLQH3KS Temperature () LQG15H/18H, LQP03T/15M/18M, LQW18A 2) 240 LQH32M/32C 220 200 180 0 10 H60A H63A(JIS Z 3282) LQP03T/15M/18M,LQG15H/18HH60A 20 30 Timesec. SolderH60A 280 260 Temperature () 0.2wt% 240 LQH32M/32C LQH3ER/3KS 220 200 muRata
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NF-3000 UVS-50R-2 LQM18N LQM21N/21D/21F LQM31F LQH31M/31C/31H
Abstract: V * X Voh 5 8 V K T SR Ri.= 3kS//2500pF 3 5.5 30 3 V ¡ 1 H if: â -
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MAX235 MAX205 EIA/RS-232 S//2500
Abstract: 4.2 6.0 2. 0/10. 0 6.0 10.0 â'¢ 1 SV2 1 4 3KS : TV VHF/OHF í ^-^Sílslilffl C-V : rs -
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1SV212 1SV217 1SV220 1SV211 1SV213 ACS25
Abstract: O ' 00 o o DO NOT SCALE D DATE SYM REVISION RECORD AUTH 08JN93 D4 UPDATED OUTLINE DWG TO P . 1.D. DR CK 930 00 7 =*RS 3KS râ'"1 s ir CM s â'"1 23.7 R E F -H 1 4.00 4 . 75 7 . 20 â'" I 7" ~ n v O à PART NO 1211 0089 -7.80 3.50 fi 0 METRIC Q o UJ THIRD ANGLE PROJECTION © Q_ e3 â'" M CODE NO ±. 03 TWO PLACE ±0.15 ONE PLACE OC 6900 N O T E S â'" 1. MAT iNG COMPONENTS -
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05MR90 13MR90 2GKR90 R0071754
Abstract: Titan-E 1K Titan-E 1KS* Titan-E 2K Titan-E 2KS* Titan-E 3K Titan-E 3KS* Titan-E 6K Titan-E 6KS* Titan-E -
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on line ups 12v dc to 230v ac inverter 1000va Titan UPS 3 phase inverter 12v 220v frequency elite ups ups titan 3k RS-232/USB AS400 RS485
Abstract: SC75 BC858B 3Ks 1=B 2=E 3=C - - - SOT23 BC858BF 3Ks 1=B 2=E 3 , 3K 1=B 2=E 3=C - - - SC75 BC858BW 3Ks 1=B 2=E 3=C - - - Infineon Technologies
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BC856 BC846 BC856A BC856B BC856BW BC857A transistor packing code 3f marking 3ks top marking 1B sot23 marking 3GS BC857AW
Abstract: - - SOT23 BC858B 3Ks 1=B 2=E 3=C - - - SOT23 BC858BL3 3K 1=B 2=E 3=C - - - TSLP-3-1 BC858BW 3Ks 1=B 2=E 3=C - - - Infineon Technologies
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BC857B BC857BL3 MARKING 3FS marking 3bs bcr1 BC860BW BC860 BC857BF BC857BW
Abstract: -450BL 450 ± 2.0kHz 5.5kHz Min. 17dB Min. 6dB Max. 2.0dB Max. 3kS! · 6dB .0 - 1 0 .0 k H z * « 'S ! -
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BLFC455D ALFY455H A 450BL TOKO 450khz alfym455 CERAMIC FILTERS 450 BLFC455B BLFC455C ALFC455E ALFC455F ALFC455G
Abstract: 3Gs 3Gs 3Js 3Ks 3K 3Ks 3Ls 3Ls 4Bs 4Cs 4Fs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1 Infineon Technologies
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BC856-BC860 3bs marking code 3BS MARKING 3Fs marking transistor 3Fs sot23 marking 3Ls BC857C BC857CW BC858A BC858C
Abstract: BC860CW Marking 3As 3Bs 3Bs 3Es 3Es 3Fs 3Fs 3F 3F 3Fs 3Gs 3Gs 3Js 3J 3Ks 3Ks 3K 3K 3Ks 3Ls 3Ls 4As 4Bs 4Bs Infineon Technologies
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MARKING CODE 21E SOT23 BC857BT BC858AT BC858BT BC858CW
Abstract: '¢ 2SC2669 3KS ffijÉ : SJi'WilBffl (AM MIX/IF igti, FM OSC/IF itti) #fi ; aUttmo Vceo(V) 30 Icbo(ÌA) 0.10 -
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2SC2670 200MH 100MH 500MH 800MH
Abstract: SIEMENS PNP Silicon Double Transistors â'¢ â'¢ â'¢ â'¢ BCV62 To be used as a current mirror Good thermal coupling and Vbe matching High current gain Low emitter-saturation voltage Type Marking Ordering Code (tape and reel) BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks 3Ls Q62702-C2158 Q62702-C2159 Q62702-C2160 Pin Configuration Cip) Package1 ) Ç (1 2) SOT-143 â  H ^ ) E1(3) J E2 ) (4 EM1 HM 3 Maximum Ratings Parameter Symbol Values Unit -
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EHP00939 D1HCH47
Abstract: BCV 62 PNP Silicon Double Transistor · To be used as a current mirror · Good thermal coupling and VBE matching · High current gain · Low collector-emitter saturation voltage C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type BCV 62A BCV 62B BCV 62C Marking Ordering Code 3Js 3Ks 3Ls Q62702-C2158 Q62702-C2159 Q62702-C2160 Pin Configuration 1 = C2 2 = C1 3 = E1 4 = E2 Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage Siemens
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EHN00003 EHN00004 EHP00941
Abstract: characterized but are not tested G E SOLI» STATE ^ DE 13fl7SDfll D011DE4 ⡠5 3N188-3N191 HUGuiii^DiL z T-3kS -
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3N188 3N189 3N190 3N191 500/XA
Abstract: UlW -iw r >-J R1 R2 U yv-iy*. J c> p Ri : 3kS? Typ R ? :2 0 0 Q T yp 11 U t 1 !> < 12 R4:1 5 0 í -
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SLA6010 10//A STA300 STA400
Abstract: BCV 62 PNP Silicon Double Transistor 3 · To be used as a current mirror · Good thermal coupling and VBE matching · High current gain 4 · Low collector-emitter saturation voltage 2 C2 (1) C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration Package BCV 62A 3Js 1 = C2 2 = C1 3 = E1 4 = E2 SOT-143 BCV 62B 3Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT-143 BCV 62C 3Ls 1 = C2 2 = C1 3 = E1 4 Infineon Technologies
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Abstract: W irew o und R esistors (4) KNH Type Dimension (mm) S e rie s A s 1.5 C± 3 11.0 11.0 15.5 19.0 19.0 19.0 28.0 28.0 28.0 28.0 KNH-5W KNH-10W KNH-15W KNH-20W KNH-30W KNH-40W KNH-50W KNH-60W KNH-80W KNH-100W B*1.5 30 45 45 50 75 90 75 90 115 140 16 16 17 19 19 19 31 31 31 31 D i 0.5 4.0 4.0 4.0 4.5 4.5 4.5 8.0 8.0 8.0 8.0 R esistance R ange 0 .2 Q -1 K Q 0.2i2~3Ks,'2 0.3£2~5K£2 0.4£2~10K£2 0.5£2~15KQ 0.6£2~20K£2 -
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Abstract: PNP Silicon Double Transistors BCV 62 Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q Type Marking Ordering Code (tape and reel) BCV 62 A BCV 62 B BCV 62 C 3Js 3Ks 3Ls Pin Configuration Q62702-C2158 Q62702-C2159 Q62702-C2160 Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage (transistor T1) VCE0 30 V Siemens
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transistor marking T2 C2160 marking 3JS k 30 transistor IC marking vt H12E
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