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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Continental Device India Limited An ISO/TS16949 ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4125 CMBT4125 GENERAL PURPOSE TRANSISTOR PÂNÂP transistor Marking CMBT4125 CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CollectorÂbase voltage (open emitter) CollectorÂemitter voltage (open base) EmitterÂbase voltage (open collector) Collector current (d.c.) Total power ... | Original |
3 pages, |
MARKING SMD PNP TRANSISTOR br ic 556 specifications CMBT4125 smd transistor 5d sot-23 transistor 5d smd smd transistor marking 5D ISO/TS16949 ISO/TS16949 abstract |
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| Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4125 CMBT4125 GENERAL PURPOSE TRANSISTOR PÂNÂP transistor Marking CMBT4125 CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CollectorÂbase voltage (open emitter) CollectorÂemitter voltage (open base) EmitterÂbase voltage (open collector) Collector current (d.c.) Total power ... | Original |
3 pages, |
CMBT4125 smd diode 5d diode 5d smd smd transistor 5d sot-23 smd diode marking 5d smd transistor 5d smd transistor marking 5D transistor 5d smd CMBT4125 abstract |
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| Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4125 CMBT4125 GENERAL PURPOSE TRANSISTOR PÂNÂP transistor Marking CMBT4125 CMBT4125 = 5D Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS CollectorÂbase voltage (open emitter) CollectorÂemitter voltage (open base) EmitterÂbase , CMBT4125 CMBT4125 SOT-23 Formed SMD Package SOT-23 Formed SMD Package SOT-23 Package Reel Information Reel ... | Original |
4 pages, |
CMBT4125 5d smd sot-23 smd transistor marking 5D smd transistor 5d smd transistor 5d sot-23 transistor 5d smd CMBT4125 abstract |
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| Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC807 BC808 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS Pç''ç'" transistor Marking BC807 BC807 = 5D BC807 BC807� = 5A BC807 BC807� = 5B BC807-40 BC807-40 = 5C BC808 BC808 = 5H BC808 BC808� = 5E BC808 BC808� = 5F BC808 BC808� = 5G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collectorç'mitter voltage (VBE = 0 ... | Original |
3 pages, |
transistor 5d smd 5F smd transistor bc807 BC807 SMD transistor BC807-40 BC808 smd diode 5H smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c w SMD TRANSISTOR MARKING 5G SMD TRANSISTOR MARKING 5c bc807 BC807 BC808 BC807 abstract |
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| Abstract: Continental Device India Limited An ISO/TS16949 ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC807 BC807 BC808 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS Pç''ç'" transistor Marking BC807 BC807 = 5D BC807 BC807� = 5A BC807 BC807� = 5B BC807-40 BC807-40 = 5C BC808 BC808 = 5H BC808 BC808� = 5E BC808 BC808� = 5F BC808 BC808� = 5G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collectorç'mitter voltage (VBE = 0) Collectorç'mitter ... | Original |
3 pages, |
Diode smd 5H BC808 BC807-40 bc807 smd transistor 5d sot-23 5H MARKING 5C smd smd transistor marking 5D smd 5c 5f bc808 smd diode 5H 5B smd transistor data SMD diode MARKING 5h smd transistor 5c sot-23 ISO/TS16949 BC807 ISO/TS16949 abstract |
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| Abstract: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC807 BC807 BC808 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS Pç''ç'" transistor Marking BC807 BC807 = 5D BC807 BC807� = 5A BC807 BC807� = 5B BC807-40 BC807-40 = 5C BC808 BC808 = 5H BC808 BC808� = 5E BC808 BC808� = 5F BC808 BC808� = 5G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ... | Original |
3 pages, |
transistor 5d smd bc807 BC807-40 BC808 smd diode 5H smd marking 5G 5C smd smd transistor 5c SMD TRANSISTOR MARKING 5c smd transistor marking 5D 5g smd transistor smd 5H transistor BC807 BC807 BC808 BC807 abstract |
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| Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC807 BC808 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS Pç''ç'" transistor Marking BC807 BC807 = 5D BC807 BC807� = 5A BC807 BC807� = 5B BC807-40 BC807-40 = 5C BC808 BC808 = 5H BC808 BC808� = 5E BC808 BC808� = 5F BC808 BC808� = 5G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM , Page 2 of 4 BC807 BC807 BC808 BC808 SOT-23 Formed SMD Package SOT-23 Package Reel Information Reel ... | Original |
4 pages, |
SMD TRANSISTOR MARKING 5H 5B SMD TRANSISTOR 5g smd transistor BC807 BC807-40 BC808 smd 5H transistor SMD TRANSISTOR MARKING 5c w smd transistor 5c sot-23 5A SMD MARKING SOT23 smd transistor 5d sot-23 BC807 abstract |
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| Abstract: TRANSISTOR, N-CHANNEL, 3P, SOT23, 100V, 0.17A ON-Semiconductor 3 R1, R10, R11 RESISTOR, SMD, 0805 , respective owners. Application Note 1068 Ordering Information PART NUMBER PART MARKING , voltage, 5V. 5d. Read the DVM connected to the VOUT1 terminal J5. VOUT1 voltage should be within 2.45V , , C11, C18, C19 2 C2, C3 2 C20, C22 CAP TANT, LOW ESR, SMD, D2, 220uF, 4V, 20% Sanyo 4TPC220M 4TPC220M 1 C4 CAP TANT, LOW ESR, SMD, D, 68uF, 16V, 10% Kemet T494D686K016AS T494D686K016AS 3 C5, C21 ... | Original |
12 pages, |
smd transistor marking 1B transistor 5d t smd transistor smd marking tp1 smd transistor 6B SMD TRANSISTOR MARKING by 4p R12 SOT323 SMD TRANSISTOR j8 PWM SMD smd transistor marking r14 smd transistor marking j8 FAIRCHILD SMD MARKING FDS6912A ISL6227EVAL2Z AN1068 ISL6227EVAL2Z abstract |
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| Abstract: (BISS) transistor in a SOT89 (SC-62/TO-243 SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic , package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS303NX PBSS303NX *5D [1] * = -: made in Hong Kong * = p: made in , PBSS303NX PBSS303NX 30 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 - 20 November 2009 Product , NXP Semiconductors 30 V, 5.1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. ... | Original |
15 pages, |
smd transistor marking 5D PBSS303PX PBSS303NX sot89 footprint PBSS303NX abstract |
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| Abstract: ) transistor in a SOT89 (SC-62/TO-243 SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP , SOT89 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS303NX PBSS303NX *5D , PBSS303NX PBSS303NX 30 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 01 - 23 August 2006 Product data , ) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 , low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the ... | Original |
15 pages, |
PBSS303PX PBSS303NX PBSS303NX abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 85 mA Output power = 10 W (PEP) Gain = 18.5 dB Efficiency = 40pct d im = -31 d 08135 N.a. Standard Marking Reel Pack, SMD, Large SOT538A RFS ; UHF power LDMOS transistor General info 10 W LDMOS power transistor for base station applications at frequencies from HF to SMD package. Applications RF power amplifiers for GSM, EDGE and CDMA base stations www.datasheetarchive.com/files/philips/pip/blf1043_7.html |
Philips | 06/06/2005 | 4.55 Kb | HTML | blf1043_7.html |
| A. Frequency = 960 Mhz Output power = 10 W (PEP) Gain = 18.5 dB Efficiency = 40 pct d im = -31 d BLF1043 BLF1043 BLF1043 BLF1043 9340 557 08135 Standard Marking * Reel Pack, SMD, Large SOT538A RFS LDMOS transistor General info 10 W LDMOS power transistor for base station applications at thermal stability Designed for broadband operation (HF to 1 GHz) SMD package count File size BLF1043 BLF1043 BLF1043 BLF1043 UHF power LDMOS transistor 24-jul-02 www.datasheetarchive.com/files/philips/pip/blf1043_n_6.html |
Philips | 23/04/2003 | 3.21 Kb | HTML | blf1043_n_6.html |
| .6 GHz at 1 dB flatness) 5 dBm saturated output power at 1 GHz Good linearity (11 dBm IP3 (out ) Leadfree Status Marking Packing Specific Package Device Status Chemical Content BGA2712 BGA2712 BGA2712 BGA2712 9340 569 48115 N.a. Standard Marking Reel Pack, SMD SOT363 internal matching circuit in a 6-pin SOT363 SMD plastic package. Features Internally wideband transistors and MMICs for wireless RF Wideband Transistors (2003-07-01) WWW View the PIP www.datasheetarchive.com/files/philips/pip/bga2712_2-v1.html |
Philips | 06/06/2005 | 4.17 Kb | HTML | bga2712_2-v1.html |
| .6 GHz at 1 dB flatness) 12.5 dBm saturated output power at 1 GHz High linearity (22 dBm OIP3 ) Leadfree Status Marking Packing Specific Package Device Status Chemical Content BGA2709 BGA2709 BGA2709 BGA2709 9340 569 49115 N.a. Standard Marking Reel Pack, SMD SOT363 internal matching circuit in a 6-pin SOT363 SMD plastic package. Features Internally wideband transistors and MMICs for wireless RF Wideband Transistors (2003-07-01) WWW View the PIP www.datasheetarchive.com/files/philips/pip/bga2709_2-v1.html |
Philips | 06/06/2005 | 4.16 Kb | HTML | bga2709_2-v1.html |
| V: Output power = 3.5 W Gain = 26.5 dB Efficiency = 19 pct ACPR < -63 dBc at .a. Standard Marking Reel Pack, SMD, Large SOT365A RFS Chemical content Support RF POWER TRANSISTORS & MODULES For All Cellular Standards CELLULAR BASESTATIONS CROSS ) Leadfree Status Marking Packing Specific Package Device Status Chemical Content BGF1901-10 BGF1901-10 BGF1901-10 BGF1901-10 9340 567 92127 N.a. Standard Marking Horizontal, Rail Pack www.datasheetarchive.com/files/philips/pip/bgf1901-10_2.html |
Philips | 06/06/2005 | 4.83 Kb | HTML | bgf1901-10_2.html |
| V: Output power = 3.5 W Gain = 26.5 dB Efficiency = 19pct ACPR < -63 dBc at .a. Standard Marking Reel Pack, SMD, Large SOT365C RFS Chemical content Support RF POWER TRANSISTORS & MODULES For All Cellular Standards CELLULAR BASESTATIONS CROSS ) Leadfree Status Marking Packing Specific Package Device Status Chemical Content BGF1801-10 BGF1801-10 BGF1801-10 BGF1801-10 9340 568 35127 N.a. Standard Marking Horizontal, Rail Pack www.datasheetarchive.com/files/philips/pip/bgf1801-10_1.html |
Philips | 06/06/2005 | 4.83 Kb | HTML | bgf1801-10_1.html |
| voltage Power Amplifier (PA) output power: 35 dBm in GSM band and 32.5 dBm in DCS/PCS band Input power: 5 dBm in GSM band and DCS/PCS band Wide operating temperature range from T amb = -20 to +85 35118 Standard Marking * Reel Pack, SMD, 13" SOT527-1 RFS -08-28) Broadband impedance matching for S-Band Transistors Behaviour of circulators under practical conditions -02-20) Considerations on efficiency of the RF power transistors in the different classes of operation Power www.datasheetarchive.com/files/philips/pip/cgy2014atw_1.html |
Philips | 14/02/2002 | 16.07 Kb | HTML | cgy2014atw_1.html |
| SEMICONDUCTORS PMBFJ174 PMBFJ174 PMBFJ174 PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 2 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 PMBFJ174 PMBFJ174 PMBFJ174 to 177 DESCRIPTION Silicon application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. PINNING Note 1. Drain and source are interchangeable. Marking -effect transistors PMBFJ174 PMBFJ174 PMBFJ174 PMBFJ174 to 177 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (PMBFJ174_175_176_177_CNV_2[1].pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| , F = 56 kHz) SUITABLE WITH BUH TRANSISTORS SERIES SMD PACKAGE FEATURES AND BENEFITS High voltage 1 5 ) ( D = D A M P E R D I O D E D T V 3 2 - 1 5 0 0 ) BASIC HORIZONTAL DEFLECTION CIRCUIT + V T R A N S F O R M E R E H T T C 1 D 1 L L I N E Y O K E ( B U H 7 1 5 ) D 1 = D T V 3 2 - 1 5 0 0 D 2 - Thailand - United Kingdom - U.S .A. PACKAGE DATA D 2 PAK Marking: DTV32G-1500B DTV32G-1500B DTV32G-1500B DTV32G-1500B Cooling method : C. Weight www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599-v2.htm |
STMicroelectronics | 14/06/1999 | 5.67 Kb | HTM | 4599-v2.htm |
| , F = 56 kHz) SUITABLE WITH BUH TRANSISTORS SERIES SMD PACKAGE FEATURES AND BENEFITS High voltage 1 5 ) ( D = D A M P E R D I O D E D T V 3 2 - 1 5 0 0 ) BASIC HORIZONTAL DEFLECTION CIRCUIT + V T R A N S F O R M E R E H T T C 1 D 1 L L I N E Y O K E ( B U H 7 1 5 ) D 1 = D T V 3 2 - 1 5 0 0 D 2 - Thailand - United Kingdom - U.S .A. PACKAGE DATA D 2 PAK Marking: DTV32G-1500B DTV32G-1500B DTV32G-1500B DTV32G-1500B Cooling method : C. Weight www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4599-v1.htm |
STMicroelectronics | 02/04/1999 | 5.71 Kb | HTM | 4599-v1.htm |