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CD4511BNSR Texas Instruments CMOS BCD-to-7-Segment LED Latch Decoder Drivers 16-SO -55 to 125 visit Texas Instruments Buy
CD4511BNSRG4 Texas Instruments CMOS BCD-to-7-Segment LED Latch Decoder Drivers 16-SO -55 to 125 visit Texas Instruments
LMV225TL/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA -40 to 85 visit Texas Instruments Buy
LMV226TLX/NOPB Texas Instruments RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA -40 to 85 visit Texas Instruments
LMV228URX/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA visit Texas Instruments
LMV228TLX/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA -40 to 85 visit Texas Instruments

smd diode code sd

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: B0520LW,B0530W,B0540W 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD , 0.049 ­Weight :0.01 gram (approximately) F ­Marking Code : SD, SE, SF G 0.08 0.15 , B0520LW,B0530W,B0540W 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Electrical , B0520LW,B0530W,B0540W 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and , compliant ­Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Taiwan Semiconductor
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MIL-STD-202
Abstract: B0520LW,B0530W,B0540W 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD , :0.01 gram (approximately) F Marking Code : SD, SE, SF G 0.08 0.15 0.02 REF , 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Electrical Characteristics Type Number , B0520LW,B0530W,B0540W 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and , Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Dimensions Taiwan Semiconductor
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marking diode SCHOTTKY SOD123 SMD

Abstract: smd DIODE code marking 20A B0520LW,B0530W,B0540W 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD , :0.01 gram (approximately) F Marking Code : SD, SE, SF G 0.08 0.15 0.02 REF , 410mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Electrical Characteristics Type Number , Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Dimensions , Ordering Information Packing 3K / 7" Reel SD SOD123 B0530W RH 3K / 7" Reel SE SOD123
Taiwan Semiconductor
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marking diode SCHOTTKY SOD123 SMD smd DIODE code marking 20A DIODE SMD MARKING CODE SF smd code diode 20a smd diode code sd schottky diode sod-123 marking code 120

SMD MARKING CODE A10

Abstract: diode smd marking code SD B0520LWF, B0530WF, B0540WF Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-123F B C , Configuration Packing Code Packing Marking B0520LWF SOD-123F RH 3K / 7" Reel SD B0530WF , B0520LWF, B0530WF, B0540WF Low VF SMD Schottky Barrier Diode Small Signal Diode Maximum Ratings , , B0540WF Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Characteristic Curves FIG. 1 , RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date
Taiwan Semiconductor
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SMD MARKING CODE A10 diode smd marking code SD diode smd marking SD mm sod code diode MARKING A10 smd diode code b1
Abstract: B0520LWF, B0530WF, B0540WF Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-123F B C , application. Version :A10 B0520LWF, B0530WF, B0540WF Low VF SMD Schottky Barrier Diode Small Signal , B0520LWF, B0530WF, B0540WF Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and , and RoHS compliant ­Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code E F Mechanical Data Unit (mm) Dimensions ­Case : Flat lead SOD-123F small Taiwan Semiconductor
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A7 SMD TRANSISTOR

Abstract: smd JH transistor '¢ Avalanche-rated BUZ 21 SMD * % 1 2 (tab) r 3 Pin 1 Pin 2 Pin 3 G D S Type Vos 'D RDS(on) Package Ordering Code BUZ21 SMD 100 V 21 A 0.085 Q d2pak Q67042-S4132 Maximum Ratings Parameter Symbol Values , ,pulsed tc = 25 -C 'SM 84 Inverse diode forward voltage vgs = 0 V, lf = 42 A ^SD 1.3 1.7 V Reverse , V 40 Forward characteristics of reverse diode /F=/(^sd) parameter: 7], tp = 80 (js 'F A Data , 55/150/56 Data Sheet 1 05.04 BUZ 21 SMD Electrical Characteristics, at 7j = 25°C, unless
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A7 SMD TRANSISTOR smd JH transistor smd diode a7 smd transistor A7 6 pin TRANSISTOR SMD CODE 21 SMD a7 Transistor

6 pin TRANSISTOR SMD CODE PA

Abstract: BUZ22 Pin 1 Pin 2 Pin 3 D Type vbs 'd "ds(on) Package Ordering Code buz 22 smd 100 v 34 a 0.055 î2 , Forward characteristics of reverse diode /f = /(^sd) parameter: Tj, /p = 80 (js Typ. capacitances C=f , BUZ 22 SMD Electrical Characteristics, at 7] = 25°C, unless otherwise specified Parameter Symbol , on-resistance VGS = 10V, /q = 22 A RDS(on) 0.05 0.055 Q Data Sheet 2 05.04 BUZ 22 SMD Electrical , Sheet 3 05.04 BUZ 22 SMD Electrical Characteristics, at 7] = 25°C, unless otherwise specified
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BUZ22SMD 6 pin TRANSISTOR SMD CODE PA BUZ22 smd code buz smd rgs BUZ22 SMD Diode smd code sm

05N03LA

Abstract: IPU05N03LA forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=50 A , =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 10000 1000 , (SMD version) ID 25 5.1 50 V m A Type IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Type IPD05N03LA IPF05N03LA Package IPS05N03LA Ordering Code IPU05N03LA Marking Package P-TO252-3-11 PG-TO252-3-11 P-TO252-3-23 Q67042-S4277 P-TO251-3-11 05N03LA P-TO251-3-21 Ordering Code
Infineon Technologies
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p 181 V Q67042-S4144 PG-TO252-3-23 Q67042-S Q67042-S4283 Q67042-S4230 PG-TO251-3-11
Abstract: D1 Schottky Diode, SMD 1 Diode D2~D10 Diode, LED White, SMD 9 Everlight , level. The 7-segment LED (DIG1) will show the corresponding light intensity level. The SD/EN key is , LED driver. Please refer to the SW program for LPC936 code example. Please refer to the datasheet to , 5 4 3 2 1 3V 2 VDD VOUT 5 C7 10nF SD GND BP C8 1uF 4 C 3V , TP2 1 U1 R13 100K G1 2 G2 4 D1 D2 Seg2 S1 S1 G1 S2 G2 S2 8 SD/EN Integrated Silicon Solution
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IS31BL3506B

marking code br 39 SMD

Abstract: 05n03la forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=50 A , ); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j , ),max (SMD version) ID 25 5.1 50 V m A Type IPD05N03LA G IPF05N03LA G IPS05N03LA G IPU05N03LA G Type IPD05N03LA IPF05N03LA Package IPS05N03LA Ordering Code IPU05N03LA Marking Package P-TO252-3-11 PG-TO252-3-11 P-TO252-3-23 Q67042-S4 P-TO2277 05N03LA P-TO251-3-21 Ordering Code
Infineon Technologies
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marking code br 39 SMD smd marking code 321 Q67042-S283 Q67042-S4244 PG-TO251-3-21 Q67042-S4273

05N03LA

Abstract: 05n03l continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS , target application 25 V R DS(on),max (SMD version) 5.1 m ID 50 A · N-channel , Ordering Code Marking IPD05N03LA P-TO252-3-11 Q67042-S4144 05N03LA IPF05N03LA Package , -3-21 IPS05N03LA Ordering Code Q67042-S4144 P-TO251-3-11 Q67042-S4194 Q67042-S 05N03LA Q67042-S4244 , =25 300 Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6
Infineon Technologies
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05n03l 05N03 P-TO252 S4230 P-TO251 diode SMD marking code 27

smd 0EE

Abstract: SMD220 cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It , package. The SMD-220 is suitable for high current applications because of its low internal connection , Energy © Avalanche Current © Repetitive Avalanche Energy © Peak Diode Recovery dv/dt ® Junction , .0M Hz See Figure 5 Source-Drain Ratings and Characteristics Is Is m V sd trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) © Diode Forward
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smd 0EE SMD220 IRF730S SMD-220 D-6380 D0B1573

2N7002K

Abstract: JESD22-A108C V DS = 25V, V GS = 0V f = 1.0 MHz Output Capacitance nC 5 pF Source-Drain Diode Diode Forward Voltage V SD I S=200mA, V GS=0V Switching Test Circuit 0.82 Gate Charge , Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List , /02/10 2012/10/24 Revision G Page. 9 Formosa MS N-Channel SMD MOSFET ESD Protection , N-Channel SMD MOSFET ESD Protection 2N7002K Electrical characteristics (AT T =25 C unless otherwise
Formosa MS
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JESD22-A108C DS-251105 JESD22-A108-C JESD22-B102-D JESD22-A102-C JESD22-A104-B JESD22-A101-B

09n03lb

Abstract: PG-TO252-3-23 forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=48 A , . capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD , Package IPD09N03LB G Ordering Code IPF09N03LB G Marking PG-TO252-3-11 Package PG-TO251-3-11 Ordering Code PG-TO252-3-23 Marking 09N03LB On request 09N03LB 09N03LB PG-TO251-3-1 On request 09N03LB , =25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source
Infineon Technologies
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IPU09N03LB IPS09N03LB Q67042-S4264

06N03LB

Abstract: Q67042-S4263 =0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 10000 , Type Ordering Code IPD06N03LB G Marking PG-TO252-3-11 Q67042-S4263 Package PG-TO251-3-11 On request Code Ordering PG-TO252-3-23 On request Marking 06N03LB 06N03LB PG-TO251-3-1 On request , current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation , resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5
Infineon Technologies
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IPU06N03LB IPS06N03LB IPF06N03LB
Abstract: V DS = 25V, V GS = 0V f = 1.0 MHz Output Capacitance nC 5 pF Source-Drain Diode Diode Forward Voltage V SD I S=200mA, V GS=0V Switching Test Circuit 0.82 Gate Charge , Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List , /02/10 2011/07/20 Revision F Page. 9 Formosa MS ESD N-Channel SMD MOSFET 2N7002K , ESD N-Channel SMD MOSFET 2N7002K Electrical characteristics (AT T =25 C unless otherwise noted) o Formosa MS
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MIL-STD-750D METHOD-2031 MIL-STD-202F METHOD-208 METHOD-1026 METHOD-1027

d 132 smd code diode

Abstract: transistor smd MJ 145 '¢ Avalanche-rated BUZ 31 SMD fl â'¢ i 2 (tab) r 3V Pin 1 Pin 2 Pin 3 G D S Type vos lo ^DS(on) Package Ordering Code buz 31 smd 200 v 14.5 a 0.2 q d'pak q67042-s4131 Maximum Ratings Parameter Symbol Values , 25 -C 'SM 58 Inverse diode forward voltage VGS = 0 V, If = 29 A ^SD 1.1 1.6 V Reverse recovery , (VDS) parameter: VGS = 0V, f= 1MHz Forward characteristics of reverse diode /f = /(^sd) parameter , Rgs = 50Q * 60 80 Data Sheet 3 05.99 BUZ 31 SMD Electrical Characteristics, at T, = 25Â
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d 132 smd code diode transistor smd MJ 145 d 132 smd diode qd SMD smd diode 145 SMD TRANSISTOR qd

12n03lb

Abstract: 12n03l 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 10000 100 25 °C, 98 , Package Type Ordering Code IPD12N03LB G Marking PG-TO252-3-11 Q67042-S4265 Package PG-TO251-3-11 On request Code Ordering PG-TO252-3-23 On request Marking 12N03LB 12N03LB PG-TO251-3-1 On request , current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation , resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5
Infineon Technologies
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12n03l d2422 12n03 IPU12N03LB IPS12N03LB IPF12N03LB

LDO regulators smd marking code

Abstract: TRANSISTOR SMD MARKING CODE 50x DS101142-4 DS101142-3 Top View micro SMD 8-Bump micro SMD Package Code: BP Top View Mini SO-8 Package , LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package PRELIMINARY May 2000 LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description The LP2967 , . Sleep Mode: Less than 2 µA quiescent current when SD pins are pulled low. Smallest Possible Size: micro SMD package uses absolute minimum board space. Precision Output: 1% tolerance. Low Noise: By adding a
National Semiconductor
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LDO regulators smd marking code TRANSISTOR SMD MARKING CODE 50x smd SD1 transistor TRANSISTOR SMD MARKING CODE SD marking code NF SMD Transistor

LP2967

Abstract: -4 DS101142-3 Top View micro SMD 8-Bump micro SMD Package Code: BP Top View Mini SO-8 Package 8 , LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package PRELIMINARY November 1999 LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description , . Sleep Mode: Less than 2 µA quiescent current when SD pins are pulled low. Smallest Possible Size: micro SMD package uses absolute minimum board space. Precision Output: 1% tolerance. Low Noise: By adding a
National Semiconductor
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