500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

smd diode M7

Catalog Datasheet MFG & Type PDF Document Tags

M7 smd diode

Abstract: diode smd m7 DESCRIPTION Schottky barrier diode encapsulated in a SOT-23 small SMD package Single and double diodes with , SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS * Surface mount device * Extremely fast , (*) Mounted on ceramic substrate: 7 x 5 x 0.5 mm STATIC ELECTRICAL CHARATERISTICS (per diode for double , uA ) Diode Capacitance 70 V Cj Reverse Current ( VR = 50 V ) 2.0 pF IR ( VR , 0.64 K 0.085 0.18 PART NO. MAS70 MAS70C MAS70A MAS70S MARKING M7 M7C
-
Original
M7 smd diode diode smd m7 smd diode M7 Diode marking m7 m7 smd diodes m7 diode

LM7805CV

Abstract: nec2501 SMD 0805 6 5 D1,D2,D3,D4,D5 M7 SMD DO-214AC 7 2 D6,D7 1N4148 Through , diode is needed to prevent electrolytic capacitor discharge through power supply. VDD 0.1uF C11 U5 , M7 + EC7 470uF/25V SCL SDA AT24C02 Figure 2-8 EEPROM Circuit and Brown Out Detect , 14 kV varistor is added to prevent over voltage. U1 N(Black) TP1 1 IN M7 C1 100nF , 78L05 1 2 T1 1 L(Yellow) 2 6 5 3 4 DB-JS-C4H D2 M7 D3 M7 D5
Samsung Electronics
Original
LM7805CV nec2501 HS0038 HS0038 IR sensor S3F84U8 HS0038 ir circuit S3F84U8/UA NEC2501 ADE7755 24-SSOP 42-SDIP

LED Driver aplications

Abstract: HER107 US1M ; 400 V; pitch = 5 mm; axial - - D1 diode; 700 V; SMD M7 SIYU D2 diode; 700 V; SMD M7 SIYU D3 diode; 700 V; axial HER107 - D4 TVS diode; 3 W; 180 V; axial P6KE180A - D5 diode; 700 V; SMD US1M DIODES D6 diode; 700 V; axial HER107 - D7 diode; 700 V; SMD US1M DIODES D8 Zener diode; 0.5 W; 5 %; 33 V; SOD80 V; SMD , Semiconductors D10 diode; 700 V; SMD M7 SIYU IC1 controller IC; SO14; SMD SSL2103 NXP
NXP Semiconductors
Original
LED Driver aplications HER107 US1M Dimming LED aplications smd m7 UM10507

RPACK 10k x 9

Abstract: Zener diode smd marking code C24 U1 PE97042 TP11 +3_3V CLK_M6 M7 M8 A0 DMODE VDD_PRE E_WR_A1 A2 A3 FIN FIN , Zener Diode 3 Pin Header 8 Pin Header 2 Pin Header SMA Connector (Side Mount) 2 Pin Header, .100 4 , (2GHz-3.2GHz) 20MHz 10 Pin SIP Resistor AVX Chip Resistor 0603 SMD Resistor 0805 SMD Resistor 0805 SMD Resistor 0805 16 Pin SMD R-Pack SMD Resistor 0603 SMD Resistor 0603 SMD Resistor 0805 SMD Resistor 0603 AVX Chip Resistor 0603 SMD Resistor 0402 Low pass filter (with R8) Not on PCB REF Select
-
Original
J502-ND LV142MLN RPACK 10k x 9 Zener diode smd marking code C24 R22D control PDU board PCB DIODE smd marking R14 R12-G R12-H R10-B R10-C R10-D R10-A

m7 smd diodes

Abstract: smd diode E17 M3 M4 M5 M6 M7 M8 M9 M10 M11 5 VDAC INJECTS THE CONTROL VOLTAGE FROM THE LTC2978 INTO , M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 R37 43.2 1W 10K R15 R36 43.2 1W 3.3V , L11 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 R18 R45 20 1W 10K COUT11 100uF 6.3V , L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 R46 20 1W , L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 R49 20 1W
Linear Technology
Original
smd diode E17 smd diode E7 DC1613A H12 smd transistor manual substitution FREE DOWNLOAD transistor manual substitution DC1540A DC1360A DC1361A LTM4603EV LTC29

smd transistor marking code XC

Abstract: XC SMD MARKING Diode Inverse diode continuous forward current A k . r A = 25 -C 0.12 Inverse diode direct current,pulsed . r A = 2 5 -C Inverse diode forward voltage 0.36 V ^SD . \/GS = 0 , G13377b 06.99 " M7 GehäusemaÃbilder Package Outlines I nf ineon technologies P-T0263 , , trays etc. are contained in our Data Book â' Package Inform ationâ' . SMD = Surface Mounted Device
-
OCR Scan
smd transistor marking code XC XC SMD MARKING Q67000-S322 BSS169 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777

SMD SOT23 XC

Abstract: smd transistor marking code XC Parameter Unit Values min. typ. max. . . 0.1 Reverse Diode Inverse diode continuous forward current A k rA = 2 5 -c Inverse diode direct current,pulsed ku . 7- = 25-C a Inverse diode forward voltage 0.3 V 'â 'S D 0.8 VGS = 0V, Ip = 0.3 A 1.3 , G13377b "M7 06.99 GehäusemaÃbilder Package Outlines Infine on technologies P-T0263 , in our Data Book â'Package Informationâ' . SMD = Surface Mounted Device Data Book 1060 â
-
OCR Scan
SMD SOT23 XC Q67000-S321 SQT-89 D13377 D13377T

diode U1J

Abstract: smd diode u1j SEMICONDUCTOR CO., LTD. The professional manufacturer of Diode, Bridge and SMD Rectifiers you are looking for. l a i r STANDARD RECOVERY RECTIFIERS: Surface Mount Glass Passivated Rectifiers: SM4001 thru SM4007, M1 thru M7, General Purpose Plastic Rectifiers: T r 1N4001S thru 1N4007S, 1N4001 thru 1N4007, 1N5391 thru 1N5399, 1N5400 thru 1N5408, Glass Passivated Rectifiers: ew v riom.t 1N4001G thru 1N4007G, 1N5319G thru 1N5399G, GR201G thru GR207G, 1N5400G thru 1N5408G, GR301G
-
Original
DB107GS diode U1J smd diode u1j 5 amp diode rectifiers 10 amp diode rectifiers bridge rectifier 1N4007 1N5822 SMD GR307G RL251 RL257 SM5817 SM5819 SGL41-20
Abstract: Avalanche energy, periodic limited by 7jmax Ear 4 Reverse diode dv/df dv/dt 6 Vgs  , , leded ftthJA - - 100 SMD version, device on PCB: % |JA @ min. footprint - - , Reverse Diode Inverse diode continuous forward current 7C = 2 5 'C Inverse diode direct current,pulsed r c = 25 â'™ C Inverse diode forward voltage Vgs = 0 V , /f = 16.8 A Reverse recovery time VH = , Forward characteristics of reverse diode C = /(V DS) ï = f(Vso) parameter: 7 j, fp = 80 (js -
OCR Scan
08N10 SPD08N10 P-T0252 Q67040-S4126 SPU08N10 P-T0251
Abstract: Ear 17.5 Reverse diode dv/dt dv/dt 6 Gate source voltage Mss ±20 V Power , resistance, junction - ambient f î thJA - - 62 SMD version, device on PCB: ñ thJA @ , yDD = 80 V, lD = 47 A, VGS = 0 to 10 V Gate plateau voltage VDD = 80 V, /D = 47 A Reverse Diode Inverse diode continuous forward current Tc = 25 -C Inverse diode direct current,pulsed Tc = 25 *C Inverse diode forward voltage l/GS = 0 V , /F = 94 A Reverse recovery time VR = 50 V, lf = ls , d if/d -
OCR Scan
47N10 SPP47N10 P-T0220-3-1 Q67040-S4183 SPB47N10 P-T0263-3-2

23N05

Abstract: s = 25 £2 Avalanche energy, periodic limited by 7imax Reverse diode dv/df 6 kV/ps % = 22 , SMD version, device on PCB: fith J A @ min. footprint - - 75 @ 6 cm2 cooling area1 , a u ) 22 A Reverse Diode Inverse diode continuous forward current Tc = 25 -C Inverse diode direct current,pulsed 7b = 25 *C Inverse diode forward voltage Vq S = 0 V, /F = 44 A Reverse recovery , parameter : Iq = 16 A, Vqs = 10 V SPD23N0S Typ. capacitances Forward characteristics of reverse diode
-
OCR Scan
23N05 SPD23N05 Q67040-S4152 SPU23N05 Q67040-S4132-A2

Transistor SMD SM 942

Abstract: energy, periodic limited by r jmax Reverse diode dv/d t 6 kV/|js Is = 30 A, \/DS = 24 V, d/7d , Thermal resistance, junction - ambient, leded ñ thJA - SMD version, device on PCB: ñ thJA , = 0 to 10 V Gate plateau voltage ^(plateau) V Vdd = 24 V, lD = 30 A Reverse Diode Inverse diode continuous forward current Tc = 25 Inverse diode direct current,pulsed Tc = 25 A "C 'C Inverse diode forward voltage V G S = 0 V , /F = 6 0 A Reverse recovery time
-
OCR Scan
Transistor SMD SM 942 30N03 67040-S

kd smd transistor

Abstract: /dt ±20 V Plot Reverse diode dv/dt 7.5 ^GS Avalanche energy, periodic limited by , - 100 SMD version, device on PCB: f f thJA @ min. footprint - - 75 @ 6 cm2 , Diode Inverse diode continuous forward current Tc = 25 *C Inverse diode direct current,pulsed Tq = 25 -C Inverse diode forward voltage 1/qs = 0 V, lF = 56 A Reverse recovery time UR = 15 V, /F=/s , : /D = 28 , 1qs = 4 5 V / Typ. capacitances Forward characteristics of reverse diode c = f
-
OCR Scan
kd smd transistor 28N03L SPD28N03L Q67040-S4139-A2 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L

smd diode K7

Abstract: plcc68 socket C10 100pF VDD GND M0 M1 M2 M3 M4 M5 M6 M7 M8 A0 A1 A2 A3 DIRECT PRE_EN NC C9 , Zener Diode LED 0805/1206 0603 Jumper 0603 Jumper Loop Filter Low pass filter (with R22) Low , SMD Resistor 0603 16 Pin SMD R-Pack DO NOT INSTALL DO NOT INSTALL 27 28 29 30 31 32 , (2GHz-3.2GHz) 20MHz VCO3 (6.5 GHz-6.63GHz) SMD Resistor 0603 SMD Resistor 0603 SMD Resistor 0603 2 dB pad 2 dB pad SMD Resistor 0805 SMD Resistor 0805 AVX Chip Resistor 0603 SMD Resistor 0805 SMD
Peregrine Semiconductor
Original
MW520 smd diode K7 plcc68 socket SMD diode S4 59 C26-C43 smd diode S6 41 S6 SMD zener diode PLCC68 IDCMATE26 AD797 ED80012-ND M3500-2032
Abstract: , periodic limited by 7|max e ar 12 Reverse diode dw/df d v/di 6 Gate source voltage ^GS , , junction - ambient, leded Thermal resistance, junction - case ñ thJA - - 62 SMD version , 24 V, lD = 46 A, 1/qS = 0 to 10 V Gate plateau voltage VDD = 24 V, /D = 46 A Reverse Diode Inverse diode continuous forward current Tc = 25 "C Inverse diode direct current,pulsed Tc = 25 -C Inverse diode forward voltage l/GS = 0 V, Ip = 9 2 A Reverse recovery time 1/r = 15 V, /p=/g , d/p/di = -
OCR Scan
46N03 G13371

28N05L

Abstract: 140 Avalanche energy, periodic limited by 7imax e ar 7.5 Reverse diode d v/dt dv/dt , 100 SMD version, device on PCB: f î thJA @ min. footprint - - 75 @ 6 cm2 cooling , /bD = 40 V, /D = 28 A Reverse Diode Inverse diode continuous forward current Tc = 25 â'˜C Inverse diode direct current,pulsed 7C = 25 -C Inverse diode forward voltage 1qs = 0 V, /f = 56 A , characteristics of reverse diode C = f (VDS) /f = '(V sd ) parameter: 7 f, tp = 80 |js 0 10 20
-
OCR Scan
28N05L SPD28N05L SPU28N05L Q67040-S4122 Q67040-S4114-A2
Abstract: , VDD = 25 V, Rqs = 25 Q Reverse diode dv/df 6 kV/ps /s = 2.9 A, VDS = 20 V, d/7df = 200 A , point (Pin 4) flthJS SMD version, device on PCB: fithJA K/W K/W @ min. footprint - , 0 V , lD = 2 .9 â  V A Reverse Diode Inverse diode continuous forward current A TA = 25 â'™C Inverse diode direct current,pulsed TA = 25 "C Inverse diode forward , gs Typ. capacitances Forward characteristics of reverse diode C = f(Vbs) Â¥ = f (v s d -
OCR Scan
BSP320S Q67000-S4001

diode gee a9

Abstract: mJ /d = 47A , Vdd = 25 V, Rgs = 25 Q Avalanche energy, periodic limited by 7jmax Reverse diode , , junction - case ñ thJA - - 62 SMD version, device on PCB: f l thJA @ min. footprint , Reverse Diode Inverse diode continuous forward current Tc = 25 'C Inverse diode direct current,pulsed Tc = 25 *C Inverse diode forward voltage yGS = 0 V , /F = 94 A Reverse recovery time VR = 50 V , reverse diode C = f (Vos) f (VSd) parameter: VGS = 0 V, / = 1 MHz parameter: 7 j, /p = 80 ps
-
OCR Scan
diode gee a9 47N10L SPP47N10L SPB47N10L Q67040-S4177 Q67040-S4176 D1337M2
Abstract: Timax £ ar 4 Reverse diode dv/df dv/di 6 Gate source voltage ^GS ±20 V , Thermal resistance, junction - ambient, leded fithJA SMD version, device on PCB: ^hJA 3.1 - , VDD = 160 V ,/D = 7 A Reverse Diode Inverse diode continuous forward current 7c = 2 5 °C Inverse diode direct current,pulsed Tc = 25 â'˜ C Inverse diode forward voltage l/GS = 0 V , l F = 1 4 , diode C = f(V DS) l f = f(Vso) parameter: Vqs = 0 V, f = 1 MHz p a ra m e te r: 7 f , fp = 8 -
OCR Scan
07N20
Abstract: 0.18 mJ Reverse diode dvldt dv/dt 6 Gate source voltage ^GS ±20 V Power , resistance, junction - soldering point (Pin 4) flthJS SMD version, device on PCB : fiihJA K/W K , Reverse Diode Inverse diode continuous forward current TA = 25 "C Inverse diode direct current,pulsed Ta = 25 â'˜ C Inverse diode forward voltage VGS = 0 V , /F = 5.2 A Reverse recovery time Vr = 30 , Forward characteristics of reverse diode C = 1 (V DS) /F = '(V SD) Ã235bü5 Data Book -
OCR Scan
BSP318S Q67000-S127 G133D17
Showing first 20 results.