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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

smd L2 diode

Catalog Datasheet MFG & Type PDF Document Tags

sma 1n4007 nxp

Abstract: smd u2.8 diode currents are shown in Figure 2. D5 AC C1 C0 L2 S1 Rcs Rs D1~D4 O CP PW M , ) DIODE D5 CONDUCTS The voltage applied to inductor L1 is ­Vo, the same as inductor L2. The current in , L2 COIL-COUPLED INDUCT, SMD, 12.3mm, 39µH, 20%, 5.5A, ROHS COILCRAFT MSD1278-394KLB 1 , Bridge Rectifier C1 Input Capacitor L1/L2 SEPIC Inductors S1 High Voltage MOSFET CO , i L2 ( 1 ) = i L1(0) + - t ON ­ - t d L2 L1 DESCRIPTION CF Feedback
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sma 1n4007 nxp smd u2.8 C3216COG2J221J ISL6745AUZ H2515-02551-1W1-T TDK sepic pfc ISL6745EVAL2Z AN1411 ISL6745UEVAL2Z 275VAC ISL6745LEVAL2Z 567BKWH

smd diode g6 DIODE S4 39 smd diode

Abstract: S4 42 DIODE Ordering Straight Standard SMD Standard t Leads L1 L- L+ 2,1 n L2 25 , Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 G4 , = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions A A A tbd , optimized intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 , equipment e Symbol 1.3 1.0 1.6 â'¢ 2 lead forms available - straight leads (SL) - SMD lead
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smd diode g6 DIODE S4 39 smd diode S4 42 DIODE smd diode S4 28 DIODE S4 37 GWM100-0085X1 IF110 ID110 100-0085X1-SL 100-0085X1-SMD 100-0085X1

S4 42 DIODE

Abstract: smd diode S6 package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 85V = 103A ID25 RDSon typ. = 5.5mW , Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 2 lead forms available - straight leads (SL) - SMD lead version (SMD) (TJ = 25°C, unless , -0085X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr
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smd diode S6 DIODE marking S6 77 smd diode code g3 SMD SL smd diode code g2 smd diode code g4

Diode smd s6 68

Abstract: S4 42 DIODE -SL G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 100-085X1-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A
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Diode smd s6 68 smd diode g6 S3 marking DIODE smd diode marking 77 smd diode sl smd diode code 03a 100-085X1-SL 100-085X1-SMD

SMD MARKING code L1

Abstract: smd diode g6 DIODE S4 39 smd diode -SL G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 180-004X2-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , °C IF25 IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions , reverse diode · package: -high level of integration -high current capability 300 A max. -aux.
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SMD MARKING code L1 smd diode marking code L2 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 180-004X2 180-004X2-SL 180-004X2-SMD

smd diode S4

Abstract: smd diode code g3 package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40V ID25 = 190A RDSon , VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions , RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr
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SMD MARKING CODE 503 K S4 DIODE DIODE S4 diode S6 SMD MARKING g3 SMD MARKING CODE 503 220-004P3 220-004P3-SL 220-04P3-BL 220-04P3-SMD

smd diode S6

Abstract: smd diode S4 L3 S6 GWM 220-003P3-SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 , G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , °C 180 138 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 115 75 A A Symbol , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. , Package options · 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads
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SMD MARKING g5 g1 smd diode SMD MARKING s6 smd diode S5 marking G5 MOSFET smd diode code s6 220-003P3-SL 220-003P3-BL 220-003P3-SMD

smd diode g6

Abstract: SMD diode MARKING CODE g6 G5 L2 S5 G6 Surface Mount Device G#24; L3 S6 GWM 220-003P3-SMD L+ S#24; G2 , S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 190 145 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 125 80 A A , intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W 20080527e #24;-3 GWM
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SMD diode MARKING CODE g6 smd S4 36

smd diode code g3

Abstract: smd diode code g4 S5 L1 L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr
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DIODE marking S4 45 SMD S6 55 A smd diode code SL smd marking code L3 smd MOSFET code S5 DIODE S4 38 160-0055X1 160-0055X1-BL 160-0055X1-SL 160-0055X1-SMD

smd diode S4

Abstract: G5 L2 S5 G6 Surface Mount Device G#24; L3 S6 GWM 100-01X1-SMD L+ S#24; G2 L , S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 190 145 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 125 80 A A , intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W 20070906c #24;-3 GWM
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100-01X1-SL 100-01X1-BL 100-01X1-SMD

diode marking L3

Abstract: marking L2 diode L3+ G5 L1- S1 L2- S3 L3- S5 e GMM 3x180-004X2 Leads SMD Ordering Standard Part , with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , = 110°C IF25 IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol , intrinsic reverse diode · package: -high level of integration -high current capability -aux.
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diode marking L3 marking L2 diode DIODE S4 53 SMD mosfet MARKING code TC Diode smd s6 g2 marking DIODE

DIODE marking S4 57

Abstract: DIODE marking S6 57 Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , 90°C TC = 110°C 57 45 43 IF25 IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) tbd tbd tbd Symbol Conditions A A A A A A iv ID25 ID90 ID110 e , intrinsic reverse diode · package: -high level of integration -high current capability -aux.
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DIODE marking S4 57 DIODE marking S6 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 60-015X1

SMD MARKING QG 6 PIN

Abstract: smd diode code g4 with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A , 1.6 · 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = , dimensions. © 2011 IXYS All rights reserved 20110307 1-3 GWM100-0085X1 Source-Drain Diode
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SMD MARKING QG 6 PIN SMD DIODE DEVICE sl smd marking SL All smd diode marking SMD diode NC smd diode l2

smd diode g6 DIODE S4 39 smd diode

Abstract: SMD MARKING code L1 - S1 L2- S3 L3- S5 e GMM 3x120-0075X2 Leads SMD Ordering Standard Part Name & , with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 75 TC = 25°C (diode) TC = 90°C (diode) Symbol Conditions A A iv IF25 IF90 A A 110 80 TC = 25°C TC
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s4 72 DIODE SMD S3 diode 120-0075X2

Diode smd s6 95

Abstract: DIODE marking S4 45 Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications , 90°C 90 68 IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 90 68 Symbol , trench technology: -low RDSon -optimized intrinsic reverse diode · package: -high level of , 3x100-01X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise
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Diode smd s6 95 L3 code 100-01X1

MTI150W40GC

Abstract: smd diode g6 package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40V = 180A ID25 RDSon , ID110 IF25 IF90 IF110 Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 40 ± 20 180 136 120 182 112 88 V , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 2 lead forms available - straight leads (SL) - SMD lead version (SMD) -o s e min. typ. 1.9 2.8
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MTI150W40GC S4 44 DIODE SMD
Abstract: - S1 L2- S3 L3- S5 e GMM 3x160-0055X2 Leads SMD Ordering Standard Part Name & , mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3 , °C TC = 90°C IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) Symbol V iv ID25 ID90 , trench technology: - low RDSon - optimized intrinsic reverse diode â'¢ package: - high level IXYS
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160-0055X2

automatic fan CONTROLLER BLOCK DIAGRAM

Abstract: application of automatic fan controller Option Option R3 Std SMD/0805 Option Option D1 Std SMD/Diode 50V, 1A 1 D2 Std SMD/Diode 50V, 0.5A 1 L_3PIN BOARD-TECH DIP/L1, L2, com 50V, 2A 1 , for Output Driver - Internal Diode only Protect for IC Power Reverse Connecting - Operating Voltage , /25V 1 2 3 4 5 L1 2 L2 2 2 2 C3 1 3 15nF/25V 2 *FG pull high resistor , 2.2uF/25V 1 2 3 4 5 L1 2 L2 2 2 1 2 C3 3 15nF/25V 2 1 R2 56 1 2
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automatic fan CONTROLLER BLOCK DIAGRAM application of automatic fan controller hall smd 4 pin DIODE 1N4001 SMD 3pin SMD 12 v zener diode 1N4001 DIODE SMD ANH011 AH285 F/50V 100HZ H/152 SMD/0805
Abstract: L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings TJ = 25 , IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 90 68 A A Symbol Conditions , intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W VDS = ID·(RDS(on) + 2RPin , All rights reserved 20070831a #24;-6 GWM 100-01X1 Source-Drain Diode Symbol Conditions IXYS
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smd diode code mj

Abstract: SMD marking code 542 Bent GWM 100-01X1 - SMD GWM 100-01X1 - BL G S G2 S2 G3 S3 G4 S4 G5 S5 G6 S6 L+ L- L L2 , L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead frames available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL
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SMD marking code 542 GWM 100-01X1 TR 505 diode smd marking BL welding mosfet smd diode code g6 9 160-0055P3
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