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Part : TSA-2.5A(CROSS: MDL-2-1/2) Supplier : OptiFuse Manufacturer : Bristol Electronics Stock : 5,000 Best Price : - Price Each : -
Part : TSA-200MA(CROSS: MDL-2/10) Supplier : OptiFuse Manufacturer : Bristol Electronics Stock : 5,000 Best Price : - Price Each : -
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Part : TSA-2A(CROSS: MDL-2) Supplier : OptiFuse Manufacturer : Bristol Electronics Stock : 5,000 Best Price : - Price Each : -
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smd L2 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: diode currents are shown in Figure 2. D5 AC C1 C0 L2 S1 Rcs Rs D1~D4 O CP PW M , ) DIODE D5 CONDUCTS The voltage applied to inductor L1 is ­Vo, the same as inductor L2. The current in , L2 COIL-COUPLED INDUCT, SMD, 12.3mm, 39uH, 20%, 5.5A, ROHS COILCRAFT MSD1278-394KLB 1 , Bridge Rectifier C1 Input Capacitor L1/L2 SEPIC Inductors S1 High Voltage MOSFET CO , i L2 ( 1 ) = i L1(0) + - t ON ­ - t d L2 L1 DESCRIPTION CF Feedback Intersil
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sma 1n4007 nxp smd u2.8 H2515-02551-1W1-T C3216COG2J221J ISL6745AUZ TDK sepic pfc ISL6745EVAL2Z AN1411 ISL6745UEVAL2Z 275VAC ISL6745LEVAL2Z 567BKWH
Abstract: Ordering Straight Standard SMD Standard t Leads L1 L- L+ 2,1 n L2 25 , Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 G4 , = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions A A A tbd , optimized intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 , equipment e Symbol 1.3 1.0 1.6 â'¢ 2 lead forms available - straight leads (SL) - SMD lead IXYS
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smd diode g6 DIODE S4 39 smd diode S4 42 DIODE smd diode S4 28 GWM100-0085X1 IF110 ID110 100-0085X1-SL 100-0085X1-SMD 100-0085X1
Abstract: package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 85V = 103A ID25 RDSon typ. = 5.5mW , Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 2 lead forms available - straight leads (SL) - SMD lead version (SMD) (TJ = 25°C, unless , -0085X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr IXYS
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smd diode S6 DIODE marking S6 77 DIODE S4 37 smd diode code g2 smd diode code g3 smd diode code g4
Abstract: -SL G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 100-085X1-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A IXYS
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Diode smd s6 68 smd diode g6 smd diode sl S3 marking DIODE smd diode code 03a smd diode marking 77 100-085X1-SL 100-085X1-SMD
Abstract: -SL G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 180-004X2-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , °C IF25 IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. IXYS
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SMD MARKING code L1 smd diode marking code L2 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 180-004X2 180-004X2-SL 180-004X2-SMD
Abstract: package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40V ID25 = 190A RDSon , VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions , RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr IXYS
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SMD MARKING CODE 503 K S4 DIODE smd diode code s6 SMD MARKING g3 SMD MARKING g5 S6 diode 220-004P3 220-004P3-SL 220-04P3-BL 220-04P3-SMD
Abstract: L3 S6 GWM 220-003P3-SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 , G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , °C 180 138 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 115 75 A A Symbol , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. , Package options · 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads IXYS
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Diode S4 g1 smd diode SMD MARKING s6 smd diode S5 marking G5 MOSFET Diode smd s6 94 220-003P3-SL 220-003P3-BL 220-003P3-SMD
Abstract: G5 L2 S5 G6 Surface Mount Device G#24; L3 S6 GWM 220-003P3-SMD L+ S#24; G2 , S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 190 145 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 125 80 A A , intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W 20080527e #24;-3 GWM IXYS
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smd S4 36
Abstract: S5 L1 L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr IXYS
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DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6 smd marking code L3 smd MOSFET code S5 160-0055X1 160-0055X1-BL 160-0055X1-SL 160-0055X1-SMD
Abstract: G5 L2 S5 G6 Surface Mount Device G#24; L3 S6 GWM 100-01X1-SMD L+ S#24; G2 L , S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 190 145 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 125 80 A A , intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W 20070906c #24;-3 GWM IXYS
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100-01X1-SL 100-01X1-BL 100-01X1-SMD
Abstract: L3+ G5 L1- S1 L2- S3 L3- S5 e GMM 3x180-004X2 Leads SMD Ordering Standard Part , with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , = 110°C IF25 IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol , intrinsic reverse diode · package: -high level of integration -high current capability -aux. IXYS
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diode marking L3 marking L2 diode DIODE S4 53 SMD mosfet MARKING code TC marking G3 g2 marking DIODE
Abstract: Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , 90°C TC = 110°C 57 45 43 IF25 IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) tbd tbd tbd Symbol Conditions A A A A A A iv ID25 ID90 ID110 e , intrinsic reverse diode · package: -high level of integration -high current capability -aux. IXYS
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DIODE marking S4 57 DIODE marking S6 57 smd diode code s1 96 smd diode .S6 22 DIODE marking S6 96 GMM3x60-015X1 60-015X1
Abstract: with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF90 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A , 1.6 · 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W VDS = , dimensions. © 2011 IXYS All rights reserved 20110307 1-3 GWM100-0085X1 Source-Drain Diode IXYS
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SMD MARKING QG 6 PIN SMD DIODE DEVICE sl smd marking SL All smd diode marking SMD diode NC smd diode MARKING 03A
Abstract: - S1 L2- S3 L3- S5 e GMM 3x120-0075X2 Leads SMD Ordering Standard Part Name & , with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 75 TC = 25°C (diode) TC = 90°C (diode) Symbol Conditions A A iv IF25 IF90 A A 110 80 TC = 25°C TC IXYS
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S3 diode s4 72 DIODE SMD 120-0075X2
Abstract: Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications , 90°C 90 68 IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 90 68 Symbol , trench technology: -low RDSon -optimized intrinsic reverse diode · package: -high level of , 3x100-01X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise IXYS
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Diode smd s6 95 L3 code 100-01X1
Abstract: package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40V = 180A ID25 RDSon , ID110 IF25 IF90 IF110 Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 40 ± 20 180 136 120 182 112 88 V , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 2 lead forms available - straight leads (SL) - SMD lead version (SMD) -o s e min. typ. 1.9 2.8 IXYS
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MTI150W40GC S4 44 DIODE SMD
Abstract: - S1 L2- S3 L3- S5 e GMM 3x160-0055X2 Leads SMD Ordering Standard Part Name & , mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3 , °C TC = 90°C IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) Symbol V iv ID25 ID90 , trench technology: - low RDSon - optimized intrinsic reverse diode â'¢ package: - high level IXYS
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160-0055X2
Abstract: Option Option R3 Std SMD/0805 Option Option D1 Std SMD/Diode 50V, 1A 1 D2 Std SMD/Diode 50V, 0.5A 1 L_3PIN BOARD-TECH DIP/L1, L2, com 50V, 2A 1 , for Output Driver - Internal Diode only Protect for IC Power Reverse Connecting - Operating Voltage , /25V 1 2 3 4 5 L1 2 L2 2 2 2 C3 1 3 15nF/25V 2 *FG pull high resistor , 2.2uF/25V 1 2 3 4 5 L1 2 L2 2 2 1 2 C3 3 15nF/25V 2 1 R2 56 1 2 Diodes
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automatic fan CONTROLLER BLOCK DIAGRAM application of automatic fan controller hall smd 4 pin DIODE 1N4001 SMD 3pin SMD 12 v zener diode 1N4001 DIODE SMD ANH011 AH285 F/50V 100HZ H/152 SMD/0805
Abstract: Bent GWM 100-01X1 - SMD GWM 100-01X1 - BL G S G2 S2 G3 S3 G4 S4 G5 S5 G6 S6 L+ L- L L2 , L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead frames available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL IXYS
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SMD marking code 542 GWM 100-01X1 TR 505 diode smd marking BL smd diode code g6 9 welding mosfet 160-0055P3
Abstract: L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings TJ = 25 , IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 90 68 A A Symbol Conditions , intrinsic reverse diode â'¢ package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W VDS = ID·(RDS(on) + 2RPin , All rights reserved 20070831a #24;-6 GWM 100-01X1 Source-Drain Diode Symbol Conditions IXYS
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