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SMD 1 Chip Quik SMD REMOVAL KIT; Accessory Type:SMD Removal Kit; For Use With:-; Product Range:- 53 from $13.99 (Dec 2016) Newark element14 Buy
SMD 1/4-S1206 5% 470 T/R - - 7,774 (Nov 2016) Chip One Exchange Buy
SMD 100UH - - 141 (Dec 2016) Chip One Exchange Buy
SMD 20 R 1/4 V Stauff GAUGE ADAPT 1/4 BSP 14 from $11.10 (Aug 2016) Allied Electronics Buy
SMD 22 - SMD 22 500 (Oct 2016) Chris Electronics Buy
SMD 22 Visual Communications Company Coupler for Surface-mount LED 1,578 from $0.1913 (Dec 2016) Allied Electronics Buy
SMD 22 Visual Communications Company SMD 22 500 from $0.1960 (Dec 2016) Chris Electronics Buy
SMD 22 Visual Communications Company LIGHT PIPE COUPLERS 328 from $0.30 (Dec 2016) element14 Asia-Pacific Buy
SMD 22 Visual Communications Company LIGHT PIPE COUPLERS 299 from €0.2480 (Dec 2016) Farnell element14 Buy
SMD 22 Visual Communications Company LED Mounting Hardware Coupler for SMD LEDs 287 from $0.1650 (Oct 2016) Mouser Electronics Buy
SMD 22 Visual Communications Company LIGHT PIPE COUPLERS; No. of LEDs:1LED's; Holder Type:Mount; Product Range:-; Accessory Type:Surface Mount Coupler; External Diameter:3.912mm; External Length:8.712mm; Holder Colour:Black; Holder Material:Nylon ;RoHS Compliant: Yes 300 from $0.2490 (Dec 2016) Newark element14 Buy
SMD 330 - SMD 330 2,000 (Oct 2016) Chris Electronics Buy
SMD 330 Visual Communications Company Unidentified 1,300 from $0.4180 (Dec 2016) Chip1Stop Buy
SMD 330 Visual Communications Company SMD 330 2,000 from $0.31 (Dec 2016) Chris Electronics Buy
SMD 4 Visual Communications Company LED LIGHT PIPE MOUNTING BASE, LIGHT PIPES; Product Range:-; Accessory Type:LED light Pipe Mounting Base; For Use With:VCC Panel Flush Light Pipes ;RoHS Compliant: Yes from $0.2760 (Nov 2016) Newark element14 Buy
SMD BOX 1 ESD KLART LOCK Schlund SMD container Dimensions L x W x H: 29 x 17 x 21 mm Colour: black, cover transparent from €1.91 (Dec 2016) Distrelec Buy
SMD BOX 2 ESD KLART LOCK Schlund SMD container Dimensions L x W x H: 23 x 33 x 21 mm Colour: black, cover transparent 99 from €2.31 (Dec 2016) Distrelec Buy
SMD BOX 3 ESD KLART LOCK Schlund SMD container Dimensions L x W x H: 57 x 33 x 21 mm Colour: black, cover transparent 116 from €2.69 (Aug 2016) Distrelec Buy
SMD DEMO BOX Lumex Optical Sensors - Development Tools SURFEELEDS DEMO BOX (Dec 2016) Mouser Electronics Buy
SMD- Coilcraft Test fixture for 1008 - 1812 body sizes 2 from $500.00 (Dec 2016) Coilcraft Direct Buy

smd L2 diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: diode currents are shown in Figure 2. D5 AC C1 C0 L2 S1 Rcs Rs D1~D4 O CP PW M , ) DIODE D5 CONDUCTS The voltage applied to inductor L1 is ­Vo, the same as inductor L2. The current in , L2 COIL-COUPLED INDUCT, SMD, 12.3mm, 39uH, 20%, 5.5A, ROHS COILCRAFT MSD1278-394KLB MSD1278-394KLB 1 , Bridge Rectifier C1 Input Capacitor L1/L2 SEPIC Inductors S1 High Voltage MOSFET CO , i L2 ( 1 ) = i L1(0) + - t ON ­ - t d L2 L1 DESCRIPTION CF Feedback ... Intersil
Original
datasheet

14 pages,
1566.69 Kb

H2515 SMD DIODE 1N4007 DATASHEET 1N4007 sod-123 250VAC CAP FAN REGULATOR BSS138LT1G-T POLY capacitor, .1uF 630V H1065-00105-100V10-T 10w led driver smd R549 NPN Transistor 600V NXP BSS138 NXP ISL6745 Application Notes ISL6745EVAL2Z POT31 ISL6745EVAL2Z 1N4007 SOD123 ISL6745EVAL2Z TDK sepic pfc ISL6745EVAL2Z ISL6745AUZ ISL6745EVAL2Z C3216COG2J221J ISL6745EVAL2Z H2515-02551-1W1-T ISL6745EVAL2Z smd u2.8 ISL6745EVAL2Z sma 1n4007 nxp ISL6745EVAL2Z ISL6745EVAL2Z ISL6745EVAL2Z TEXT
datasheet frame
Abstract: Ordering Straight Standard SMD Standard t Leads L1 L- L+ 2,1 n L2 25 , Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 G4 , = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions A A A tbd , optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 , equipment e Symbol 1.3 1.0 1.6 • 2 lead forms available - straight leads (SL) - SMD lead ... IXYS
Original
datasheet

3 pages,
86.57 Kb

smd diode S4 28 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode GWM100-0085X1 TEXT
datasheet frame
Abstract: package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 85V = 103A ID25 RDSon typ. = 5.5mW , Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Conditions , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 2 lead forms available - straight leads (SL) - SMD lead version (SMD) (TJ = 25°C, unless , -0085X1 -0085X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr ... IXYS
Original
datasheet

3 pages,
177.33 Kb

SMD SL smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g3 smd diode code g2 DIODE S4 37 DIODE marking S6 77 smd diode S6 S4 42 DIODE GWM100-0085X1 TEXT
datasheet frame
Abstract: -SL G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 100-085X1-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A ... IXYS
Original
datasheet

3 pages,
99.1 Kb

smd diode MARKING 03A smd diode code g3 g1 smd diode SMD diode NC GWM100 smd marking SL SMD MARKING code L1 SMD S6 55 A diode s1 77 DIODE S4 77 smd diode marking 77 smd diode code 03a S3 marking DIODE GWM100-0085X1 smd diode sl GWM100-0085X1 smd diode g6 GWM100-0085X1 smd diode S6 GWM100-0085X1 smd diode g6 DIODE S4 39 smd diode GWM100-0085X1 DIODE marking S6 77 GWM100-0085X1 S4 42 DIODE GWM100-0085X1 Diode smd s6 68 GWM100-0085X1 GWM100-0085X1 GWM100-0085X1 TEXT
datasheet frame
Abstract: -SL G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 180-004X2-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , °C IF25 IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. ... IXYS
Original
datasheet

3 pages,
99.02 Kb

smd diode mj 19 mosfet smd code tc smd diode code L2 diode s6 28 smd S6 smd diode s1 smd diode code SL SMD diode NC smd diode code g3 DIODE marking Sl SMD mosfet MARKING code TJ SMD MARKING g5 smd diode g5 180-004X2 smd diode code mj 180-004X2 smd diode s4 180-004X2 DIODE smd marking l3 180-004X2 smd diode S6 180-004X2 smd diode marking code L2 180-004X2 smd diode g6 DIODE S4 39 smd diode 180-004X2 SMD MARKING code L1 180-004X2 180-004X2 180-004X2 TEXT
datasheet frame
Abstract: package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40V ID25 = 190A RDSon , VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions , RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr ... IXYS
Original
datasheet

3 pages,
105.46 Kb

mosfet smd code tc marking code s4 diode smd diode code mj s6 smd code DIODE marking Sl SMD mosfet MARKING code TC diode S6 smd diode S5 DIODE S4 S6 diode smd diode code g4 SMD MARKING g5 220-004P3 SMD MARKING g3 220-004P3 smd diode code s6 220-004P3 SMD MARKING CODE 503 220-004P3 S4 DIODE 220-004P3 smd diode S6 220-004P3 smd diode code g3 220-004P3 SMD MARKING CODE 503 K 220-004P3 smd diode S4 220-004P3 220-004P3 220-004P3 TEXT
datasheet frame
Abstract: L3 S6 GWM 220-003P3-SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 , G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , °C 180 138 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 115 75 A A Symbol , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. , Package options · 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads ... IXYS
Original
datasheet

3 pages,
108.14 Kb

marking code s1 SMD diode G2 SMD code smd diode S2 Diode smd s6 94 SMD MARKING g3 smd diode code s6 marking G5 MOSFET smd diode S5 smd diode code g4 smd diode code g3 SMD MARKING s6 S3 marking DIODE g1 smd diode 220-004P3 smd diode g6 220-004P3 smd diode g5 220-004P3 Diode S4 220-004P3 SMD MARKING g5 220-004P3 S4 DIODE 220-004P3 smd diode S4 220-004P3 smd diode S6 220-004P3 220-004P3 220-004P3 TEXT
datasheet frame
Abstract: G5 L2 S5 G6 Surface Mount Device G#24; L3 S6 GWM 220-003P3-SMD L+ S#24; G2 , S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 190 145 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 125 80 A A , intrinsic reverse diode • package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W 20080527e #24;-3 GWM ... IXYS
Original
datasheet

3 pages,
105.63 Kb

smd diode g6 220-004P3 TEXT
datasheet frame
Abstract: S5 L1 L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr ... IXYS
Original
datasheet

3 pages,
103.42 Kb

smd marking code L2 G2 SMD code smd diode code s6 DIODE S4 38 DIODE S4 smd s4 diode s6 smd code smd diode code S5 smd MOSFET code S5 smd marking code L3 SMD diode MARKING CODE g6 smd diode code SL smd diode S6 160-0055X1 SMD S6 55 A 160-0055X1 DIODE marking S4 45 160-0055X1 smd diode code mj 160-0055X1 smd diode S4 160-0055X1 smd diode g6 DIODE S4 39 smd diode 160-0055X1 smd diode code g4 160-0055X1 smd diode code g3 160-0055X1 160-0055X1 160-0055X1 TEXT
datasheet frame
Abstract: G5 L2 S5 G6 Surface Mount Device G#24; L3 S6 GWM 100-01X1-SMD L+ S#24; G2 L , S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 190 145 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 125 80 A A , intrinsic reverse diode • package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version (SMD) - bent leads (BL) K/W K/W 20070906c #24;-3 GWM ... IXYS
Original
datasheet

3 pages,
105.76 Kb

smd diode S4 220-004P3 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C Per diode 10 A ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C Per device 20 I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 180 A I RRM Repetitive peak reverse current tp = 2 m s F = 1KHz Per diode 1 A Tstg Storage temperature range -65 to +150 5 C Tj Maximum
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3506-v2.htm
STMicroelectronics 14/06/1999 6.92 Kb HTM 3506-v2.htm
: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky voltage Per diode 45 V I F(AV) Average forward current d = 0.5 Tc = 1355C 1355C Per diode Per device 15 30 A I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 220 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Tj K 1/5 Symbol Parameter Value Unit R th (j-c) Junction to case Per diode Total 1.60 0.85 5 C/W R th
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3510-v2.htm
STMicroelectronics 14/06/1999 5.83 Kb HTM 3510-v2.htm
: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C Per diode 7.5 A ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C Per device 15 I F(RMS) RMS forward current Per diode 20 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 150 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage temperature range -65 to +150 5 C Tj Maximum
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3503-v2.htm
STMicroelectronics 14/06/1999 6.93 Kb HTM 3503-v2.htm
: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C Per diode 7.5 A ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C Per device 15 I F(RMS) RMS forward current Per diode 20 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 150 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage temperature range -65 to +150 5 C Tj Maximum
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3503-v1.htm
STMicroelectronics 02/04/1999 6.97 Kb HTM 3503-v1.htm
: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky voltage Per diode 45 V I F(AV) Average forward current d = 0.5 Tc = 1355C 1355C Per diode Per device 15 30 A I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 220 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Tj K 1/5 Symbol Parameter Value Unit R th (j-c) Junction to case Per diode Total 1.60 0.85 5 C/W R th
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3510-v1.htm
STMicroelectronics 02/04/1999 5.87 Kb HTM 3510-v1.htm
: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual center tap Schottky voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C Per diode 10 A ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C Per device 20 I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 180 A I RRM Repetitive peak reverse current tp = 2 m s F = 1KHz Per diode 1 A Tstg Storage temperature range -65 to +150 5 C Tj Maximum
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3506-v1.htm
STMicroelectronics 02/04/1999 6.96 Kb HTM 3506-v1.htm
TIME HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE Parameter Value Unit I F(RMS) RMS forward current Per diode 10 A I F(AV) Average forward current d = 0.5 Tc=125 5 C Per diode 5 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 50 A T CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 4.0 5 C/W Total Rth (c) Coupling 5 C/W When the diodes 1 and 2 are used simultaneously : D Tj(diode 1) = P(diode 1) x Rth(j-c) (Per
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4405-v1.htm
STMicroelectronics 14/06/1999 5.2 Kb HTM 4405-v1.htm
PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE (tape and reel option: -TR) FEATURES , per diode) A1 A1 K K A2 A2 TO-220AB STPS640CT STPS640CT ISOWATT220AB ISOWATT220AB STPS640CF STPS640CF K A2 A1 1/6 Symbol Parameter Value Unit R th (j-c) Junction to case TO-220AB/ DPAK Per diode Total 5.5 3 5 C/W ISOWATT220AB ISOWATT220AB Per diode Total 7.5 5.2 R th(c) Coupling TO-220AB 0.5 5C/W ISOWATT220AB ISOWATT220AB 3 THERMAL RESISTANCES Symbol Tests ) STATIC ELECTRICAL CHARACTERISTICS (per diode) 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3628.htm
STMicroelectronics 20/10/2000 10.47 Kb HTM 3628.htm
SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM Repetitive peak reverse voltage 200 V I F(RMS) RMS forward current Per diode 20 A I F(AV) Average forward current d = 0.5 Tc=120 5 C Per diode Per device 8 16 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 80 A T stg Tj Storage temperature range Maximum junction temperature - 65 to + 150 150 (j-c) Junction to case Per diode 3.0 5 C/W Total R th (c) Coupling 5 C/W When the diodes 1 and 2 are
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4407-v1.htm
STMicroelectronics 02/04/1999 5.3 Kb HTM 4407-v1.htm
SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM Repetitive peak reverse voltage 200 V I F(RMS) RMS forward current Per diode 20 A I F(AV) Average forward current d = 0.5 Tc=120 5 C Per diode Per device 8 16 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 80 A T stg Tj Storage temperature range Maximum junction temperature - 65 to + 150 150 (j-c) Junction to case Per diode 3.0 5 C/W Total R th (c) Coupling 5 C/W When the diodes 1 and 2 are
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4407-v2.htm
STMicroelectronics 14/06/1999 5.26 Kb HTM 4407-v2.htm