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smd L2 diode

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Abstract: STMicroelectronics: STEVAL-ISA005V1 STEVAL-ISA005V1 QTY Reference 1 CON1 1 2 1 1 1 2 2 1 2 1 1 1 1 1 1 2 1 1 CON2 C1, C2 C3 C4 C6 C7, C8 D1, D2 D3 D4, D5 D6 D7 L1 L2 R1 R3 , TC04RKME50VB10M TC04RKME50VB10M 22nF 50V 10% ceramic capacitor 100nF 50V 10% ceramic 1A 1000V diode GL1M 13V 0.5W 5% zener diode ZMM13 ZMM13 RGL34J RGL34J 0.5A 600V fast recovery diode 18V 0.5W 5% zener diode ZMM18 ZMM18 75V 200mA diode , TH TH TH SMD SMD SMD SMD SMD SMD SMD TH TH TH SMD SMD SMD ... Original
datasheet

1 pages,
50.18 Kb

diod zener diode ZENER L2 smd GENERAL SEMICONDUCTOR SOD-80 1000V zener 13v smd SMD resistor 805 GENERAL SEMICONDUCTOR SMD DIODES sod-80 SMD smd diode l2 Nippon Chemi-Con SMD ZENER DIODE d4 smd 1a 400v diode capacitor 100nF STEVAL-ISA005V1 940-T-DS/02 STEVAL-ISA005V1 abstract
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Abstract: ISO1 J1, J2 L1, L2 Q1 Q2 R1 R2 R3 R4 R5, R10, R18 R6, R7, R8, R19 R9 R11 R12 R13 R14 , 50V ceramic capacitor 0.01uF 50V ceramic capacitor Bridge Dip 1A LED green 58V zener diode Small signal diode 188V zener diode Schottky diode 2A 40V Schottky diode 3A 150V LED yellow , 0805 0805 SMD SMD TH TH SMD TH TH SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD TH TH SMD SMD 0805 SMA SOD-123 SMA SMB SMB 0805 DPAK SOT-23 0805 0805 0805 0805 1206 ... Original
datasheet

1 pages,
9.76 Kb

100uf 63v electrolytic capacitor smd 2a transistor TRANSISTOR SMD PNP 1A diode ZENER C2 smd smd DIODE c19 1A smd mosfet diode zener c19 smd capacitor 1uf/100v smd 1a 100v diode bridge capacitor 47uF 25V SMD TL431 SMD smd transistor 123 STEVAL-TSP001V1 STEVAL-TSP001V1 abstract
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Abstract: D1 IC1 IC2 L1 L2 L3 R1 R2 R3 R4 R5 S1 S2 VOLUME Description SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor Electrolytic Capacitor , Capacitor Diode SMD FM Receiver IC SMD Opamp Inductance Inductance Inductance SMD Resistor SMD , TUNE RESET L3 6T/R4mm C13 470pF 220pF 68pF 10K L2 20T/R4mm C9 40pF C16 10uF/16V ... Original
datasheet

4 pages,
131.68 Kb

FM scan smd smd capacitor 3v 100 "FM receiver" smd diode l2 2 watt smd resistor smd DIODE c19 capacitor 220uF smd 07088 smd Capacitor smd 16v smd L2 diode 220uF 16V Electrolytic Capacitor smd smd diode S2 SMD FM IC RFM-07088 RFM-07088 RFM-07088 abstract
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Abstract: Capacitor 30mA 20% C9 lODnF50V muRata GRM40X7R104Z50 GRM40X7R104Z50 SMD Ceramic Capacitor 20% C10 47nF 50V muRata GRM40X7R473Z50 GRM40X7R473Z50 SMD Ceramic Capacitor 20% D1, D2 BRIDGE General instruments DF10S DF10S SMT Diode Bridge 1000V 1A D3r D4 ZY180V ZY180V DG-41 DG-41 Zen er Diode 180V 2W 5% Do ZMM 15,'SOD-SO Mini-Me If Zen er Diode 15 V 0.5 W 5% D6 TMBAT49 TMBAT49 STMicroeiectronics Small Signal Sctiottky Diode 80V 0.5A D7 LL4148 LL4148.'SOD-SO SOD-SO General Purpose , 44LD22 44LD22 Y1 Ceramic Capacitor 20% C27 C3 220ilF 630V TDK C5750X7R2J224M C5750X7R2J224M SMD Ceramic Capacitor 20% C4 ... OCR Scan
datasheet

2 pages,
58.56 Kb

LL4148 LL41 OPTOCOUPLER SHARP E13 TIW IC 7402 Hartmann C5750X7R2J224M yk Rubycon RV3, SMD 10SP050L rubycon 25v 22uf DIODE SMD Y1 GLF2012T100M SMD diode za Rubycon yk STEVAL-ISA012V1 380VAC STEVAL-ISA012V1 abstract
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Abstract: G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 180-004X2-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF25 IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A ... Original
datasheet

3 pages,
99.02 Kb

smd L2 diode smd diode code s3 smd diode g6 SMD diode NC SMD mosfet MARKING code TJ diode s6 28 smd diode code mj smd diode code SL smd diode s1 smd diode code g3 smd S6 SMD MARKING g5 DIODE marking Sl 180-004X2 180-004X2 abstract
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Abstract: G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 100-085X1-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A ... Original
datasheet

3 pages,
99.1 Kb

SMD mosfet MARKING code TJ smd marking SL smd diode code g4 GWM100 g1 smd diode smd diode marking 77 smd diode MARKING 03A diode s1 77 SMD MARKING CODE s4 s6 diode smd diode code g3 SMD MARKING code L1 GWM100-0085X1 GWM100-0085X1 abstract
datasheet frame
Abstract: L3+ G5 L1- S1 L2- S3 L3- S5 e GMM 3x180-004X2 Leads SMD Ordering Standard Part , with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , = 110°C IF25 IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol , intrinsic reverse diode · package: -high level of integration -high current capability -aux. ... Original
datasheet

3 pages,
124.94 Kb

Control of Starter-generator g2 marking DIODE IF110 marking G3 diode marking L3 S3 marking DIODE smd diode marking code L2 smd diode S2 Diode smd s6 smd diode g6 DIODE S4 53 marking G5 MOSFET smd diode S6 datasheet abstract
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Abstract: ,C23 C25 C27 C31,C32 C37,C38,C39 C41,C43 C44 D3 D4,D5 D6,D7,D8,D9,D10 JP6 J2 L2 Q1,Q2 R2 , Y2 C100p-1808 C-1uF C-0.1uF SMD1808-A1 SMD1808-A1 SMD0603-A1 SMD0603-A1 SMD0603-A1 SMD0603-A1 CAP, SMD, Ceramic, 10%, 2kV, 1808 Ceramic Y5V, +80/-20%, 10V, 0603 C/C/SMD, Y5V, +80/-20%, 25V, 0603 C1010C000G1808COG02KV C1010C000G1808COG02KV 151008796-104 C-0.01uF SMD0603-A1 SMD0603-A1 C/C/SMD, Y5V, +80/-20%, 25V, 0603 151008796-104 C-0.47uF C-33uF C-27pF C-10uF C-0.001uF 10uF LED-YEL-SMD LED-GRN-SMD DIODE RJ45_LAN WOLHDR L-BEAD ... Original
datasheet

4 pages,
34.35 Kb

pe-68515 SMD-3528 SO8N footprint smd L2 diode SMD diode U5 smd diode rj XFMR-PULSE-PE68515 XFORMER SMD7343-A1 DP83816 SMD-6032 smd diode d9 SMD led 3528 IRF7105 DP83816 abstract
datasheet frame
Abstract: G1 L3 S6 GWM 220-003P3-SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 , G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 180 138 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 115 75 A A , intrinsic reverse diode · package: -high level of integration -high current capability 300 A max. , 1.6 Package options · 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - ... Original
datasheet

3 pages,
108.14 Kb

smd G2 Diode smd s6 94 marking G5 MOSFET G2 SMD code smd diode S2 smd diode S5 SMD MARKING g3 smd diode code s6 SMD MARKING s6 smd diode code g4 smd diode code g3 smd diode g6 S3 marking DIODE 220-004P3 220-004P3 abstract
datasheet frame
Abstract: S5 L1 L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr ... Original
datasheet

3 pages,
103.42 Kb

160-0055X1-SL SMD MARKING g2 S3 diode SMD MARKING CODE s4 smd MOSFET code S5 smd marking code L2 smd diode S2 55 DIODE S4 38 S3 marking DIODE smd diode code SL smd diode code s6 DIODE S4 smd DIODE marking S4 45 160-0055X1 160-0055X1 abstract
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RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 7.5 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 15 I F(RMS) RMS forward current Per diode 20 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 150 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3503-v1.htm
STMicroelectronics 02/04/1999 6.97 Kb HTM 3503-v1.htm
RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 10 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 20 I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 180 A I RRM Repetitive peak reverse current tp = 2 m s F = 1KHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3506-v2.htm
STMicroelectronics 14/06/1999 6.92 Kb HTM 3506-v2.htm
RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 10 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 20 I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 180 A I RRM Repetitive peak reverse current tp = 2 m s F = 1KHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3506-v1.htm
STMicroelectronics 02/04/1999 6.96 Kb HTM 3506-v1.htm
RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 7.5 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 15 I F(RMS) RMS forward current Per diode 20 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 150 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3503-v2.htm
STMicroelectronics 14/06/1999 6.93 Kb HTM 3503-v2.htm
No abstract text available
www.datasheetarchive.com/download/35831517-877278ZC/p108b.zip (P108Basy.pdf)
Texas Instruments 17/01/2000 256.88 Kb ZIP p108b.zip
No abstract text available
www.datasheetarchive.com/download/13495398-885325ZC/p108b.zip (P108Basy.pdf)
Texas Instruments 16/01/2000 256.88 Kb ZIP p108b.zip
INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 Tc = 1355C 1355C 1355C 1355C Per diode Per device 15 30 A I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 220 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Tj Storage temperature range Maximum junction temperature
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3510-v1.htm
STMicroelectronics 02/04/1999 5.87 Kb HTM 3510-v1.htm
INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 Tc = 1355C 1355C 1355C 1355C Per diode Per device 15 30 A I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 220 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Tj Storage temperature range Maximum junction temperature
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3510-v2.htm
STMicroelectronics 14/06/1999 5.83 Kb HTM 3510-v2.htm
SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM Repetitive peak reverse voltage 200 V I F(RMS) RMS forward current Per diode 20 A I F(AV) Average forward current d = 0.5 Tc=120 5 C Per diode Per device 8 16 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 80 A T stg Tj Storage temperature range Maximum junction temperature - 65 to + 150 150 (j-c) Junction to case Per diode 3.0 5 C/W Total R th (c) Coupling 5 C/W When the diodes 1 and 2 are
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4407-v2.htm
STMicroelectronics 14/06/1999 5.26 Kb HTM 4407-v2.htm
SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM Repetitive peak reverse voltage 200 V I F(RMS) RMS forward current Per diode 20 A I F(AV) Average forward current d = 0.5 Tc=120 5 C Per diode Per device 8 16 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 80 A T stg Tj Storage temperature range Maximum junction temperature - 65 to + 150 150 (j-c) Junction to case Per diode 3.0 5 C/W Total R th (c) Coupling 5 C/W When the diodes 1 and 2 are
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4407-v1.htm
STMicroelectronics 02/04/1999 5.3 Kb HTM 4407-v1.htm