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BB156,115 NXP Semiconductors DIODE 16 pF, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SMD, 2 PIN, Variable Capacitance Diode ri Buy
BB156,135 NXP Semiconductors DIODE 16 pF, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SMD, 2 PIN, Variable Capacitance Diode ri Buy
BAS16,235 NXP Semiconductors DIODE 0.215 A, 85 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN, Signal Diode ri Buy

smd L2 diode

Catalog Datasheet Results Type PDF Document Tags
Abstract: STMicroelectronics: STEVAL-ISA005V1 STEVAL-ISA005V1 QTY Reference 1 CON1 1 2 1 1 1 2 2 1 2 1 1 1 1 1 1 2 1 1 CON2 C1, C2 C3 C4 C6 C7, C8 D1, D2 D3 D4, D5 D6 D7 L1 L2 R1 R3 , TC04RKME50VB10M TC04RKME50VB10M 22nF 50V 10% ceramic capacitor 100nF 50V 10% ceramic 1A 1000V diode GL1M 13V 0.5W 5% zener diode ZMM13 ZMM13 RGL34J RGL34J 0.5A 600V fast recovery diode 18V 0.5W 5% zener diode ZMM18 ZMM18 75V 200mA diode , TH TH TH SMD SMD SMD SMD SMD SMD SMD TH TH TH SMD SMD SMD ... Original
datasheet

1 pages,
50.18 Kb

GENERAL SEMICONDUCTOR DIODE LL4148 SOD80 diod zener SOD-80 1000V SMD ZENER DIODE d4 zener 13v smd SMD resistor 805 GENERAL SEMICONDUCTOR SMD DIODES sod-80 SMD smd diode l2 capacitor 100nF Nippon Chemi-Con smd 1a 400v diode STEVAL-ISA005V1 940-T-DS/02 STEVAL-ISA005V1 abstract
datasheet frame
Abstract: ISO1 J1, J2 L1, L2 Q1 Q2 R1 R2 R3 R4 R5, R10, R18 R6, R7, R8, R19 R9 R11 R12 R13 R14 , 50V ceramic capacitor 0.01uF 50V ceramic capacitor Bridge Dip 1A LED green 58V zener diode Small signal diode 188V zener diode Schottky diode 2A 40V Schottky diode 3A 150V LED yellow , 0805 0805 SMD SMD TH TH SMD TH TH SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD SMD TH TH SMD SMD 0805 SMA SOD-123 SMA SMB SMB 0805 DPAK SOT-23 0805 0805 0805 0805 1206 ... Original
datasheet

1 pages,
9.76 Kb

diode zener c19 SMD ZENER DIODE d7 100uf 63v electrolytic capacitor TRANSISTOR SMD PNP 1A diode ZENER C2 smd smd DIODE c19 1A smd mosfet smd transistor 123 smd capacitor 1uf/100v capacitor 47uF 25V SMD smd 1a 100v diode bridge SMD ZENER DIODE j1 STEVAL-TSP001V1 STEVAL-TSP001V1 abstract
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Abstract: D1 IC1 IC2 L1 L2 L3 R1 R2 R3 R4 R5 S1 S2 VOLUME Description SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor SMD Capacitor Electrolytic Capacitor , Capacitor Diode SMD FM Receiver IC SMD Opamp Inductance Inductance Inductance SMD Resistor SMD , TUNE RESET L3 6T/R4mm C13 470pF 220pF 68pF 10K L2 20T/R4mm C9 40pF C16 10uF/16V ... Original
datasheet

4 pages,
131.68 Kb

RFM-07088 CAPACITOR 40pf 220uF 16V Electrolytic Capacitor smd 2 watt smd resistor smd diode l2 "FM receiver" Capacitor smd 16v smd DIODE c19 capacitor 220uF smd 07088 smd smd L2 diode smd diode S2 RFM-07088 abstract
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Abstract: Capacitor 30mA 20% C9 lODnF50V muRata GRM40X7R104Z50 GRM40X7R104Z50 SMD Ceramic Capacitor 20% C10 47nF 50V muRata GRM40X7R473Z50 GRM40X7R473Z50 SMD Ceramic Capacitor 20% D1, D2 BRIDGE General instruments DF10S DF10S SMT Diode Bridge 1000V 1A D3r D4 ZY180V ZY180V DG-41 DG-41 Zen er Diode 180V 2W 5% Do ZMM 15,'SOD-SO Mini-Me If Zen er Diode 15 V 0.5 W 5% D6 TMBAT49 TMBAT49 STMicroeiectronics Small Signal Sctiottky Diode 80V 0.5A D7 LL4148 LL4148.'SOD-SO SOD-SO General Purpose , 44LD22 44LD22 Y1 Ceramic Capacitor 20% C27 C3 220ilF 630V TDK C5750X7R2J224M C5750X7R2J224M SMD Ceramic Capacitor 20% C4 ... OCR Scan
datasheet

2 pages,
58.56 Kb

E13 TIW LL4148 LL41 smd 1C yk Rubycon 10SP050L C5750X7R2J224M Hartmann IC 7402 RV3, SMD rubycon 25v 22uf DIODE SMD Y1 GLF2012T100M SMD diode za Rubycon yk STEVAL-ISA012V1 380VAC STEVAL-ISA012V1 abstract
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Abstract: G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 180-004X2-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF25 IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A ... Original
datasheet

3 pages,
99.02 Kb

smd L2 diode SMD diode NC smd diode code s3 smd MOSFET code S5 SMD mosfet MARKING code TJ SMD MARKING g5 diode s6 28 smd diode code g3 smd diode s1 smd diode code mj smd S6 smd diode code SL smd diode g5 180-004X2 180-004X2 abstract
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Abstract: G1 L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 GWM 100-085X1-SMD t , G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , with Trench MOSFETs in DCB isolated high current package L+ G3 S3 G1 S1 G5 S5 L1 L2 L3 , IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A ... Original
datasheet

3 pages,
99.1 Kb

diode marking code 77 smd marking SL SMD mosfet MARKING code TJ diode s1 77 GWM100 g1 smd diode S4 42 DIODE s6 diode SMD MARKING CODE s4 smd diode code g3 SMD MARKING code L1 smd diode marking 77 smd diode MARKING 03A GWM100-0085X1 GWM100-0085X1 abstract
datasheet frame
Abstract: L3+ G5 L1- S1 L2- S3 L3- S5 e GMM 3x180-004X2 Leads SMD Ordering Standard Part , with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 L3 S4 S6 L1- S2 L3+ L2- L3- Applications , = 110°C IF25 IF90 IF110 IF110 TC = 25°C (diode) TC = 90°C (diode) TC = 110°C (diode) Symbol , intrinsic reverse diode · package: -high level of integration -high current capability -aux. ... Original
datasheet

3 pages,
124.94 Kb

Control of Starter-generator diode marking L3 Diode smd s6 g2 marking DIODE IF110 marking G3 S3 marking DIODE smd diode S2 smd diode g6 marking G5 MOSFET DIODE S4 53 smd diode S6 marking L2 diode datasheet abstract
datasheet frame
Abstract: ,C23 C25 C27 C31,C32 C37,C38,C39 C41,C43 C44 D3 D4,D5 D6,D7,D8,D9,D10 JP6 J2 L2 Q1,Q2 R2 , Y2 C100p-1808 C-1uF C-0.1uF SMD1808-A1 SMD1808-A1 SMD0603-A1 SMD0603-A1 SMD0603-A1 SMD0603-A1 CAP, SMD, Ceramic, 10%, 2kV, 1808 Ceramic Y5V, +80/-20%, 10V, 0603 C/C/SMD, Y5V, +80/-20%, 25V, 0603 C1010C000G1808COG02KV C1010C000G1808COG02KV 151008796-104 C-0.01uF SMD0603-A1 SMD0603-A1 C/C/SMD, Y5V, +80/-20%, 25V, 0603 151008796-104 C-0.47uF C-33uF C-27pF C-10uF C-0.001uF 10uF LED-YEL-SMD LED-GRN-SMD DIODE RJ45_LAN WOLHDR L-BEAD ... Original
datasheet

4 pages,
34.35 Kb

CN-PCI-FINGER c25 mosfet smd SO8N footprint C1010C000G1808COG02KV AMP 173979-3 P517CT-ND DP83816 IRF7105 P516CT-ND y2 SMD XFORMER XFMR-PULSE-PE68515 SMD7343-A1 DP83816 abstract
datasheet frame
Abstract: G1 L3 S6 GWM 220-003P3-SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 , G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 180 138 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 115 75 A A , intrinsic reverse diode · package: -high level of integration -high current capability 300 A max. , 1.6 Package options · 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - ... Original
datasheet

3 pages,
108.14 Kb

diode S6 Diode smd s6 94 marking G5 MOSFET smd diode S5 smd diode S2 G2 SMD code SMD MARKING g3 smd diode code s6 smd diode g6 SMD MARKING s6 smd diode code g4 smd diode code g3 g1 smd diode 220-004P3 220-004P3 abstract
datasheet frame
Abstract: S5 L1 L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version (SMD) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr ... Original
datasheet

3 pages,
103.42 Kb

SMD MARKING CODE g6 smd marking code L3 S6 MARKING CODE DIODE L2 smd marking code s4 diode smd S3 marking DIODE DIODE S4 smd smd diode code s6 SMD diode MARKING CODE g6 SMD MARKING CODE s4 SMD MARKING g2 smd MOSFET code S5 160-0055X1 160-0055X1 abstract
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RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 7.5 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 15 I F(RMS) RMS forward current Per diode 20 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 150 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3503-v1.htm
STMicroelectronics 02/04/1999 6.97 Kb HTM 3503-v1.htm
RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 10 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 20 I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 180 A I RRM Repetitive peak reverse current tp = 2 m s F = 1KHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3506-v2.htm
STMicroelectronics 14/06/1999 6.92 Kb HTM 3506-v2.htm
RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 10 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 20 I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 180 A I RRM Repetitive peak reverse current tp = 2 m s F = 1KHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3506-v1.htm
STMicroelectronics 02/04/1999 6.96 Kb HTM 3506-v1.htm
RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND Parameter Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 TO-220AB / D 2 PAK Tc = 1355C 1355C 1355C 1355C Per diode 7.5 A ISOWATT220AB ISOWATT220AB ISOWATT220AB ISOWATT220AB Tc = 1205C 1205C 1205C 1205C Per device 15 I F(RMS) RMS forward current Per diode 20 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 150 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Storage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3503-v2.htm
STMicroelectronics 14/06/1999 6.93 Kb HTM 3503-v2.htm
No abstract text available
www.datasheetarchive.com/download/35831517-877278ZC/p108b.zip (P108Basy.pdf)
Texas Instruments 17/01/2000 256.88 Kb ZIP p108b.zip
No abstract text available
www.datasheetarchive.com/download/13495398-885325ZC/p108b.zip (P108Basy.pdf)
Texas Instruments 16/01/2000 256.88 Kb ZIP p108b.zip
INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 Tc = 1355C 1355C 1355C 1355C Per diode Per device 15 30 A I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 220 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Tj Storage temperature range Maximum junction temperature
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3510-v1.htm
STMicroelectronics 02/04/1999 5.87 Kb HTM 3510-v1.htm
INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE FEATURES AND BENEFITS Dual Value Unit V RRM Repetitive peak reverse voltage Per diode 45 V I F(AV) Average forward current d = 0.5 Tc = 1355C 1355C 1355C 1355C Per diode Per device 15 30 A I F(RMS) RMS forward current Per diode 30 A I FSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 220 A I RRM Repetitive peak reverse current tp = 2 m s F = 1kHz Per diode 1 A Tstg Tj Storage temperature range Maximum junction temperature
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3510-v2.htm
STMicroelectronics 14/06/1999 5.83 Kb HTM 3510-v2.htm
SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM Repetitive peak reverse voltage 200 V I F(RMS) RMS forward current Per diode 20 A I F(AV) Average forward current d = 0.5 Tc=120 5 C Per diode Per device 8 16 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 80 A T stg Tj Storage temperature range Maximum junction temperature - 65 to + 150 150 (j-c) Junction to case Per diode 3.0 5 C/W Total R th (c) Coupling 5 C/W When the diodes 1 and 2 are
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4407-v2.htm
STMicroelectronics 14/06/1999 5.26 Kb HTM 4407-v2.htm
SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY SMD PACKAGE DESCRIPTION ABSOLUTE MAXIMUM Repetitive peak reverse voltage 200 V I F(RMS) RMS forward current Per diode 20 A I F(AV) Average forward current d = 0.5 Tc=120 5 C Per diode Per device 8 16 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 80 A T stg Tj Storage temperature range Maximum junction temperature - 65 to + 150 150 (j-c) Junction to case Per diode 3.0 5 C/W Total R th (c) Coupling 5 C/W When the diodes 1 and 2 are
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4407-v1.htm
STMicroelectronics 02/04/1999 5.3 Kb HTM 4407-v1.htm